JPS5710939A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number: JPS5710939A
Authority: JP; Japan
Prior art keywords: layer; ion injection; film; dielectric film; substrate
Prior art date: 1980-06-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP8567380A

Other languages

English (en)

Inventor

Kazuo Nishiyama

Shozo Watabe

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-06-24

Filing date

1980-06-24

Publication date

1982-01-20

1980-06-24 Application filed by Sony Corp filed Critical Sony Corp

1980-06-24 Priority to JP8567380A priority Critical patent/JPS5710939A/ja

1982-01-20 Publication of JPS5710939A publication Critical patent/JPS5710939A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 3
238000004519 manufacturing process Methods 0.000 title 1
150000002500 ions Chemical class 0.000 abstract 6
239000000758 substrate Substances 0.000 abstract 5
238000002347 injection Methods 0.000 abstract 4
239000007924 injection Substances 0.000 abstract 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
238000000137 annealing Methods 0.000 abstract 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
238000010521 absorption reaction Methods 0.000 abstract 1
229910052796 boron Inorganic materials 0.000 abstract 1
229910052681 coesite Inorganic materials 0.000 abstract 1
229910052906 cristobalite Inorganic materials 0.000 abstract 1
238000005530 etching Methods 0.000 abstract 1
239000012535 impurity Substances 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
239000000377 silicon dioxide Substances 0.000 abstract 1
235000012239 silicon dioxide Nutrition 0.000 abstract 1
229910052682 stishovite Inorganic materials 0.000 abstract 1
229910052905 tridymite Inorganic materials 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Recrystallisation Techniques (AREA)

JP8567380A 1980-06-24 1980-06-24 Manufacture of semiconductor device Pending JPS5710939A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP8567380A JPS5710939A (en)	1980-06-24	1980-06-24	Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP8567380A JPS5710939A (en)	1980-06-24	1980-06-24	Manufacture of semiconductor device

Publications (1)

Publication Number	Publication Date
JPS5710939A true JPS5710939A (en)	1982-01-20

Family

ID=13865337

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP8567380A Pending JPS5710939A (en)	1980-06-24	1980-06-24	Manufacture of semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS5710939A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5911622A (ja) *	1982-07-13	1984-01-21	Ushio Inc	加熱方法
EP0432612A3 (de) *	1989-12-09	1994-07-20	eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG	Verfahren zur Erzeugung von Ladungsträgerlebensdauerprofilen in einem Halbleiter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5510974A (en) *	1978-07-12	1980-01-25	Tomy Kogyo Co	Electric circuit switchgear of motor for luminous body movement support frame in game played by projecting shade of luminous body to screen and its baseball game

1980
- 1980-06-24 JP JP8567380A patent/JPS5710939A/ja active Pending

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5510974A (en) *	1978-07-12	1980-01-25	Tomy Kogyo Co	Electric circuit switchgear of motor for luminous body movement support frame in game played by projecting shade of luminous body to screen and its baseball game

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5911622A (ja) *	1982-07-13	1984-01-21	Ushio Inc	加熱方法
EP0432612A3 (de) *	1989-12-09	1994-07-20	eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG	Verfahren zur Erzeugung von Ladungsträgerlebensdauerprofilen in einem Halbleiter

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