JPS5586123A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5586123A JPS5586123A JP16163978A JP16163978A JPS5586123A JP S5586123 A JPS5586123 A JP S5586123A JP 16163978 A JP16163978 A JP 16163978A JP 16163978 A JP16163978 A JP 16163978A JP S5586123 A JPS5586123 A JP S5586123A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- field
- ultraviolet rays
- semiconductor substrate
- interface level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To reduce an interface level by placing a semiconductor substrate covered with an insulating film in a high frequency field, heating and irradiating ultraviolet rays thereto.
CONSTITUTION: A semiconductor substrate 1 is placed in a field about 13.56MHz, and ultraviolet rays and infrared rays 4 are irradiated to the substrate 1. A treatment in N2-H2 atmosphere with field intensity at about 10kV/mm and substrate temperature at 200W500°C to prevent pn-junction from breakdown is not to involve a damage by plasma, and an interface level can be reduced at normal temperature as compared with a conventional annealing.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16163978A JPS6041849B2 (en) | 1978-12-23 | 1978-12-23 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16163978A JPS6041849B2 (en) | 1978-12-23 | 1978-12-23 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5586123A true JPS5586123A (en) | 1980-06-28 |
JPS6041849B2 JPS6041849B2 (en) | 1985-09-19 |
Family
ID=15739003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16163978A Expired JPS6041849B2 (en) | 1978-12-23 | 1978-12-23 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6041849B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63138741A (en) * | 1986-12-01 | 1988-06-10 | Nippon Telegr & Teleph Corp <Ntt> | Annealing device for compound semiconductor substrate |
JPH07321061A (en) * | 1994-10-03 | 1995-12-08 | Sony Corp | Manufacture of semiconductor device |
-
1978
- 1978-12-23 JP JP16163978A patent/JPS6041849B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63138741A (en) * | 1986-12-01 | 1988-06-10 | Nippon Telegr & Teleph Corp <Ntt> | Annealing device for compound semiconductor substrate |
JPH07321061A (en) * | 1994-10-03 | 1995-12-08 | Sony Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6041849B2 (en) | 1985-09-19 |
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