JPS55165640A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55165640A
JPS55165640A JP7337979A JP7337979A JPS55165640A JP S55165640 A JPS55165640 A JP S55165640A JP 7337979 A JP7337979 A JP 7337979A JP 7337979 A JP7337979 A JP 7337979A JP S55165640 A JPS55165640 A JP S55165640A
Authority
JP
Japan
Prior art keywords
substrate
film
heat
impurity layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7337979A
Other languages
Japanese (ja)
Other versions
JPS6250972B2 (en
Inventor
Keiichiro Uda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7337979A priority Critical patent/JPS55165640A/en
Publication of JPS55165640A publication Critical patent/JPS55165640A/en
Publication of JPS6250972B2 publication Critical patent/JPS6250972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To perform efficient activation and attain good ohmic connection, by injecting ions into the surface of a semiconductor substrate to make an impurity layer, providing a wiring of Mo or the like and irradiating the reverse side with CO2 laser light or the like to simultaneously treat the impurity layer and the Mo film with heat. CONSTITUTION:Ions are injected into an Si substrate 3 to add an impurity 2. An Mo film 1 is coated. The reverse side of the substrate is irradiated with CO2 laser light 4 which almost penetrates the Si substrate. The energy of the light is absorbed near the boundary 5 between the Mo and the Si to activate the added atoms and treat the Mo film with heat. According to this method, only the impurity layer absorbs the energy of the light and the activation ratio is almost 100%. The Mo is well treated with heat near the boundary on the Si and unlikely to be affected by an atmosphere during the treatment. Therefore, good ohmic connection is attained. Mo and W are advantageous because their melting points are high and they are therefore not sublimed or evaporated.
JP7337979A 1979-06-11 1979-06-11 Manufacture of semiconductor device Granted JPS55165640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7337979A JPS55165640A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7337979A JPS55165640A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165640A true JPS55165640A (en) 1980-12-24
JPS6250972B2 JPS6250972B2 (en) 1987-10-28

Family

ID=13516485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7337979A Granted JPS55165640A (en) 1979-06-11 1979-06-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165640A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027422A (en) * 1988-06-24 1990-01-11 Ricoh Co Ltd High-temperature heat treatment by laser
JP2005183604A (en) * 2003-12-18 2005-07-07 Semiconductor Leading Edge Technologies Inc Method for heat treatment of semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028485U (en) * 1988-06-29 1990-01-19
JPH0250363U (en) * 1988-10-03 1990-04-09
JPH0250362U (en) * 1988-10-03 1990-04-09

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (en) * 1971-08-11 1973-04-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (en) * 1971-08-11 1973-04-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027422A (en) * 1988-06-24 1990-01-11 Ricoh Co Ltd High-temperature heat treatment by laser
JP2005183604A (en) * 2003-12-18 2005-07-07 Semiconductor Leading Edge Technologies Inc Method for heat treatment of semiconductor device

Also Published As

Publication number Publication date
JPS6250972B2 (en) 1987-10-28

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