JPS5772378A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5772378A JPS5772378A JP14877180A JP14877180A JPS5772378A JP S5772378 A JPS5772378 A JP S5772378A JP 14877180 A JP14877180 A JP 14877180A JP 14877180 A JP14877180 A JP 14877180A JP S5772378 A JPS5772378 A JP S5772378A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- impurity ions
- field insulating
- ions
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 7
- 239000012535 impurity Substances 0.000 abstract 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To activate impurity ions at a section where laser rays are difficult to be thermally irradiated, and to anneal and decrease an interface level increased through ion injection by injecting impurity ions and executing proper heat treatment just before a laser is irradiated. CONSTITUTION:A field insulating film 12 is formed selectively onto a semiconductor substrate 11, a gate insulating film 13 is shaped to a region surrounded by the field insulating film 12, impurity ions are injected using a gate electrode 14 and the field insulating film 12 as masks, and impurity ion injecting regions 15a, 15b are formed. Ions are activated and the interface level is annealed and decreased by thermally treating the whole in a hydrogen atmosphere having approximately 450 deg.C. Impurity ions are activated by approximately 100% through laser irradiation, and source and drain regions 16a, 16b having sufficiently low layer resistance are obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14877180A JPS5772378A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14877180A JPS5772378A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772378A true JPS5772378A (en) | 1982-05-06 |
Family
ID=15460287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14877180A Pending JPS5772378A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772378A (en) |
-
1980
- 1980-10-23 JP JP14877180A patent/JPS5772378A/en active Pending
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