JPS57112013A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57112013A JPS57112013A JP18708780A JP18708780A JPS57112013A JP S57112013 A JPS57112013 A JP S57112013A JP 18708780 A JP18708780 A JP 18708780A JP 18708780 A JP18708780 A JP 18708780A JP S57112013 A JPS57112013 A JP S57112013A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- impurity
- liquid layer
- unevenness
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 239000007788 liquid Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 235000011187 glycerol Nutrition 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000010979 ruby Substances 0.000 abstract 1
- 229910001750 ruby Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To prevent the generation of unevenness on the edge of the oxide film of the subject semiconductor device by a method wherein, after an oxide film has been formed on a semiconductor substrate, an impurity diffusing window has been provided and an impurity ion has been implanted in the substrate and when an annealing is performed by irradiating a laser beam, a liquid layer is interpositioned on the substrate. CONSTITUTION:An SiO2 film is coated on the Si substrate, the impurity diffusing window is provided, an impurity implantation region is formed by implanting an ion, and when an annealing is performed to activate the above region by irradiating a laser beam, the following procedures are taken. The substrate having the selectively exposed surface is soaked in glycerin, CCl4 and warer, a liquid layer of 2-3mum in thickness is formed on the substrate, and a ruby or YAG laser, having energy density of 1.5-1.6 joules/cm<2>, is irradiated through the liquid layer. Through these procedures, no unevenness is generated on the edge of the SiO2 film even when energy density is high.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18708780A JPS57112013A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18708780A JPS57112013A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57112013A true JPS57112013A (en) | 1982-07-12 |
| JPS6325496B2 JPS6325496B2 (en) | 1988-05-25 |
Family
ID=16199882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18708780A Granted JPS57112013A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57112013A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01109199U (en) * | 1988-01-16 | 1989-07-24 | ||
| JPH0326997U (en) * | 1989-07-27 | 1991-03-19 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566443A (en) * | 1979-06-28 | 1981-01-23 | Agency Of Ind Science & Technol | Laser annealing method |
-
1980
- 1980-12-29 JP JP18708780A patent/JPS57112013A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566443A (en) * | 1979-06-28 | 1981-01-23 | Agency Of Ind Science & Technol | Laser annealing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6325496B2 (en) | 1988-05-25 |
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