JPS57106072A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57106072A
JPS57106072A JP18249680A JP18249680A JPS57106072A JP S57106072 A JPS57106072 A JP S57106072A JP 18249680 A JP18249680 A JP 18249680A JP 18249680 A JP18249680 A JP 18249680A JP S57106072 A JPS57106072 A JP S57106072A
Authority
JP
Japan
Prior art keywords
window
layer
insulating layer
semiconductor layer
adhered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18249680A
Other languages
Japanese (ja)
Other versions
JPS6348194B2 (en
Inventor
Hisao Hayashi
Masanori Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP18249680A priority Critical patent/JPS57106072A/en
Publication of JPS57106072A publication Critical patent/JPS57106072A/en
Publication of JPS6348194B2 publication Critical patent/JPS6348194B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable semiconductor layer to be evenly adhered to only a window of an insulating layer, by a method wherein, through evaporation of a semiconductor layer on an insulating layer resulting from the heating due to a light irradiation, the semiconductor layer is caused to selectively remain in only a window in the insulating layer. CONSTITUTION:An insulating layer 2 is formed on a surface of a Si substrate 1, and a window is provided in a part thereof. Impurity is poured into the substrate 1 through the window 2a to form a base region 3. A thin insulating layer 2' is then formed so that it blockades the window 2a, a window 2b is bored in a part thereof, and a multicrystal semiconductor layer 4, whereon impurity is doped in a high concentration, is adhered to the layers 2' and 2 so that it blocks the inside of the window 2b. The layer 4 is then irradiated with laser light. This causes only a part, over the layers 2 and 2', of the layer 4 to be partially increased in temperature, whereby only the layer 4 at said part is selectively evaporated for removal, and only a part, directly adhered to the region 3 through the window 2b, remains. This causes adhering of the layer 4, which finally remains as an emitter electrode, to be evenly adhered to only the window 2b and to prevent from stretching over the layers 2 and 2'.
JP18249680A 1980-12-22 1980-12-22 Manufacture of semiconductor device Granted JPS57106072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18249680A JPS57106072A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18249680A JPS57106072A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57106072A true JPS57106072A (en) 1982-07-01
JPS6348194B2 JPS6348194B2 (en) 1988-09-28

Family

ID=16119300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18249680A Granted JPS57106072A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57106072A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236163A (en) * 1985-04-11 1986-10-21 Rohm Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236163A (en) * 1985-04-11 1986-10-21 Rohm Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6348194B2 (en) 1988-09-28

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