JPS57106072A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57106072A JPS57106072A JP18249680A JP18249680A JPS57106072A JP S57106072 A JPS57106072 A JP S57106072A JP 18249680 A JP18249680 A JP 18249680A JP 18249680 A JP18249680 A JP 18249680A JP S57106072 A JPS57106072 A JP S57106072A
- Authority
- JP
- Japan
- Prior art keywords
- window
- layer
- insulating layer
- semiconductor layer
- adhered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To enable semiconductor layer to be evenly adhered to only a window of an insulating layer, by a method wherein, through evaporation of a semiconductor layer on an insulating layer resulting from the heating due to a light irradiation, the semiconductor layer is caused to selectively remain in only a window in the insulating layer. CONSTITUTION:An insulating layer 2 is formed on a surface of a Si substrate 1, and a window is provided in a part thereof. Impurity is poured into the substrate 1 through the window 2a to form a base region 3. A thin insulating layer 2' is then formed so that it blockades the window 2a, a window 2b is bored in a part thereof, and a multicrystal semiconductor layer 4, whereon impurity is doped in a high concentration, is adhered to the layers 2' and 2 so that it blocks the inside of the window 2b. The layer 4 is then irradiated with laser light. This causes only a part, over the layers 2 and 2', of the layer 4 to be partially increased in temperature, whereby only the layer 4 at said part is selectively evaporated for removal, and only a part, directly adhered to the region 3 through the window 2b, remains. This causes adhering of the layer 4, which finally remains as an emitter electrode, to be evenly adhered to only the window 2b and to prevent from stretching over the layers 2 and 2'.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18249680A JPS57106072A (en) | 1980-12-22 | 1980-12-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18249680A JPS57106072A (en) | 1980-12-22 | 1980-12-22 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57106072A true JPS57106072A (en) | 1982-07-01 |
JPS6348194B2 JPS6348194B2 (en) | 1988-09-28 |
Family
ID=16119300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18249680A Granted JPS57106072A (en) | 1980-12-22 | 1980-12-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106072A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61236163A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacture of semiconductor device |
-
1980
- 1980-12-22 JP JP18249680A patent/JPS57106072A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61236163A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6348194B2 (en) | 1988-09-28 |
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