JP2018170409A - 選択成長方法 - Google Patents
選択成長方法 Download PDFInfo
- Publication number
- JP2018170409A JP2018170409A JP2017066859A JP2017066859A JP2018170409A JP 2018170409 A JP2018170409 A JP 2018170409A JP 2017066859 A JP2017066859 A JP 2017066859A JP 2017066859 A JP2017066859 A JP 2017066859A JP 2018170409 A JP2018170409 A JP 2018170409A
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- Prior art keywords
- film
- insulating film
- conductive film
- gas
- selective growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 113
- 239000010408 film Substances 0.000 claims abstract description 478
- 239000007789 gas Substances 0.000 claims abstract description 100
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000012495 reaction gas Substances 0.000 claims abstract description 13
- 230000008016 vaporization Effects 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000005121 nitriding Methods 0.000 claims description 23
- 239000007800 oxidant agent Substances 0.000 claims description 23
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 12
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
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- 239000011572 manganese Substances 0.000 claims description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052713 technetium Inorganic materials 0.000 claims description 3
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002243 precursor Substances 0.000 description 35
- 229910004298 SiO 2 Inorganic materials 0.000 description 24
- 239000000463 material Substances 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 6
- 238000002485 combustion reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000011534 incubation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 239000007833 carbon precursor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
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- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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Abstract
【解決手段】絶縁膜と導電膜とが露出している下地上に、薄膜を選択的に成長させる選択成長方法であって、絶縁膜と導電膜とが露出している下地を有する被処理体を準備する工程と、絶縁膜および導電膜上にアミノシラン系ガスを吸着させる第1段階、および吸着されたアミノシラン系ガスと反応してSi系絶縁膜を形成する反応ガスを供給する第2段階を複数回繰り返して前記絶縁膜上にシリコン系絶縁膜を選択的に成長させ、その際に反応ガスとの反応により導電膜を気化させ、減膜させる工程とを有する。
【選択図】図1
Description
まず、第1の実施形態について説明する。図1は第1の実施形態に係る選択成長方法の一例を示すフローチャート、図2A〜図2Fは図1に示す選択成長方法の各工程を行っている際の状態を概略的に示す断面図である。
上記ステップ2のサブステップ2aに用いられるSiプリカーサとしては、アミノシラン系ガスを用いる。アミノシラン系ガスとしては、リガンドの分子量が比較的大きいものが好ましく、1分子内に存在する炭化水素基が2個以上のものが好ましい。また、炭化水素基が分子量の小さいメチル基である場合は、1分子内に存在するメチル基が4個以上であることが好ましい。このようなリガンドの分子量が比較的大きいアミノシランは、導電膜3上に付着した後、酸化剤を供給した際に、酸化剤が導電膜3に達しやすく、酸化剤によるSiO2の生成をほとんど生じさせずに導電膜3を酸化させることが可能となる。
処理温度:200℃
Siプリカーサ:3DMAS
酸化剤:O3ガス
Siプリカーサ供給条件
3DMASガス流量:50〜300sccm
供給時間:5〜30sec
処理圧力:0.1〜4Torr(13.3〜533Pa)
酸化条件
O3ガス流量:6.5sLm
供給時間:60〜600sec
処理圧力:0.5Torr(66.7Pa)
上記ステップ3に用いられるプリカーサとしては、導電膜3の少なくとも表面を構成する物質を含むものが用いられ、導電膜3の表面上に導電膜3の少なくとも表面と同じ材料からなる導電膜6を成膜する。例えば、導電膜3の少なくとも表面がRu膜である場合には、導電膜6を成膜する際のルテニウムプリカーサとして、例えば、ルテニウムカルボニル(Ru3(CO)12)を用いて、化学蒸着法(CVD)、好適には熱CVD法により導電膜6を成膜することができる。ルテニウムプリカーサとしては、シクロペンタジエニル系等の他の有機ルテニウム化合物を用いることもできる。
処理温度:200℃
ルテニウムプリカーサ:Ru3(CO)12
Ru3(CO)12ガス流量:10sccm
処理時間:900sec
処理圧力:0.1Torr(13.3Pa)
処理温度:350℃
カーボンプリカーサ:C4H6
反応ガス:Cl2ガス
C4H6ガス流量:200sccm
Cl2ガス流量50sccm
処理時間:180min
処理圧力:6Torr(798Pa)
次に、第2の実施形態について説明する。図6は第2の実施形態に係る選択成長方法の一例を示すフローチャート、図7A〜図7Gは図6に示す選択成長方法の各工程を行っている際の状態を概略的に示す断面図である。
次に、第3の実施形態について説明する。本実施形態では、絶縁膜としてシリコン窒化膜(SiN膜)を適用した場合について説明する。図10は第3の実施形態に係る選択成長方法の一例を示すフローチャート、図11A〜図11Fは図10に示す選択成長方法の各工程を行っている際の状態を概略的に示す断面図である。
上記ステップ22のサブステップ22aに用いられるSiプリカーサとしては、第1の実施形態と同様、アミノシラン系ガスを用いる。アミノシラン系ガスとしては、リガンドの分子量が比較的大きいものが好ましく、1分子内に存在する炭化水素基が2個以上のものが好ましい。また、炭化水素基が分子量の小さいメチル基の場合は、1分子内に存在するメチル基が4個以上であることが好ましい。このようなリガンドの分子量が比較的大きいアミノシランは、導電膜13上に付着した後、窒化剤を供給した際に、窒化剤が導電膜13に達しやすく、窒化剤によるSiNの生成をほとんど生じさせずに導電膜3を酸化させることが可能となる。
処理温度:300℃
Siプリカーサ:3DMAS
窒化剤:NH3ガス
Siプリカーサ供給条件
3DMASガス流量:50〜300sccm
供給時間:1〜60sec
処理圧力:0.1〜5Torr(13.3〜667Pa)
窒化条件
NH3ガス流量:5sLm
供給時間:5〜60sec
処理圧力:0.3Torr(39.9Pa)
上記ステップ23に用いられるプリカーサとしては、導電膜13の少なくとも表面を構成する物質を含むものが用いられ、導電膜13の表面上に導電膜13の少なくとも表面と同じ材料からなる導電膜16を成膜する。例えば、導電膜13の少なくとも表面がGe膜である場合には、導電膜16を成膜する際のゲルマニウムプリカーサとして、例えば、モノゲルマン(GeH4)等のゲルマン系化合物を用いて、化学蒸着法(CVD)、好適には熱CVD法により導電膜16を成膜することができる。
処理温度:300℃
ゲルマニウムプリカーサ:GeH4
GeH4ガス流量:100sccm
処理時間:900sec
処理圧力:1Torr(133Pa)
以上、本発明の実施の形態について説明したが、この発明は、上記の実施の形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。
2;絶縁膜(SiO2膜)
3;導電膜(Ru膜またはC膜)
4;SiO2単分子膜
5;絶縁膜(SiO2膜)
6,8,9;導電膜(Ru膜またはC膜)
7;金属膜
12;絶縁膜(SiN膜)
13;導電膜(Ge膜)
14;SiN単分子膜
15;絶縁膜(SiN膜)
16;導電膜(Ge膜)
Claims (15)
- 絶縁膜と導電膜とが露出している下地上に、薄膜を選択的に成長させる選択成長方法であって、
絶縁膜と導電膜とが露出している下地を有する被処理体を準備する工程と、
前記絶縁膜および前記導電膜上にアミノシラン系ガスを吸着させる第1段階、および吸着された前記アミノシラン系ガスと反応してSi系絶縁膜を形成する反応ガスを供給する第2段階を複数回繰り返して前記絶縁膜上にシリコン系絶縁膜を選択的に成長させ、その際に前記反応ガスとの反応により前記導電膜を気化させ、減膜させる工程と
を有することを特徴とする選択成長方法。 - 絶縁膜と導電膜とが露出している下地上に、薄膜を選択的に成長させる選択成長方法であって、
絶縁膜と導電膜とが露出している下地を有する被処理体を準備する工程と、
前記絶縁膜および前記導電膜上にアミノシラン系ガスを吸着させる第1段階、および吸着された前記アミノシラン系ガスと反応してSi系絶縁膜を形成する反応ガスを供給する第2段階を複数回繰り返して前記絶縁膜上にシリコン系絶縁膜を選択的に成長させ、その際に前記反応ガスとの反応により前記導電膜を気化させ、減膜させる工程と、
次いで、前記導電膜を選択的に成長させる工程と
を有し、前記シリコン系絶縁膜の選択成長工程および前記導電膜の選択成長工程を所定回行うことを特徴とする選択成長方法。 - 絶縁膜と導電膜とが露出している下地上に、薄膜を選択的に成長させる選択成長方法であって、
絶縁膜と導電膜として金属膜とが露出している下地を有する被処理体を準備する工程と、
前記金属膜の上に、所定の導電膜を選択的に成長させる工程と、
前記絶縁膜および前記導電膜上にアミノシラン系ガスを吸着させる第1段階、および吸着された前記アミノシラン系ガスと反応してSi系絶縁膜を形成する反応ガスを供給する第2段階を複数回繰り返して前記絶縁膜上にシリコン系絶縁膜を選択的に成長させ、その際に前記反応ガスとの反応により前記導電膜を気化させ、減膜させる工程と
を有することを特徴とする選択成長方法。 - 絶縁膜と導電膜とが露出している下地上に、薄膜を選択的に成長させる選択成長方法であって、
絶縁膜と導電膜として金属膜とが露出している下地を有する被処理体を準備する工程と、
前記金属膜の上に、所定の導電膜を選択的に成長させる工程と、
前記絶縁膜および前記導電膜上にアミノシラン系ガスを吸着させる第1段階、および吸着された前記アミノシラン系ガスと反応してSi系絶縁膜を形成する反応ガスを供給する第2段階を複数回繰り返して前記絶縁膜上にシリコン系絶縁膜を選択的に成長させ、その際に前記反応ガスとの反応により前記導電膜を気化させ、減膜させる工程と、
前記導電膜を選択的に成長させる工程と
を有し、前記シリコン系絶縁膜の選択成長工程および前記導電膜の選択成長工程を所定回行うことを特徴とする選択成長方法。 - 前記シリコン系絶縁膜の選択成長工程および前記導電膜の選択成長工程のいずれかで終了することを特徴とする請求項2または請求項4に記載の選択成長方法。
- 前記金属膜は、タングステン(W)、バナジウム(V)、クロム(Cr)、マンガン(Mn)、鉄(Fe)、コバルト(Co)、ニッケル(Ni)、亜鉛(Zn)、ガリウム(Ga)、ゲルマニウム(Ge)、シリコン(Si)、ジルコニウム(Zr)、ニオブ(Nb)、モリブデン(Mo)、テクネチウム(Tc)、ハフニウム(Hf)、ロジウム(Rh)、パラジウム(Pd)、インジウム(In)、スズ(Sn)、タンタル(Ta)、レニウム(Re)、オスミウム(Os)、イリジウム(Ir)、白金(Pt)、金(Au)からなる群から選択されたものであることを特徴とする請求項3または請求項4に記載の選択成長方法。
- 成長させた前記シリコン系絶縁膜または成長させた導電膜を除去する工程をさらに有することを特徴とする請求項1から請求項6のいずれか1項に記載の選択成長方法。
- 前記アミノシラン系ガスは、1分子中に2個以上の炭化水素基を含むものであることを特徴とする請求項1から請求項7のいずれか1項に記載の選択成長方法。
- 前記アミノシラン系ガスは、前記炭化水素基がメチル基の場合に、1分子中に4個以上のメチル基を含むものであることを特徴とする請求項8に記載の選択成長方法。
- 前記シリコン系絶縁膜はシリコン酸化膜であり、前記反応ガスは酸化剤であり、前記導電膜は酸化剤により酸化して気化する物質であることを特徴とする請求項1から請求項9のいずれか1項に記載の選択成長方法。
- 前記導電膜は、ルテニウム膜またはカーボン膜であることを特徴とする請求項10に記載の選択成長方法。
- 前記酸化剤は、オゾンガス、O2ガス、O2/H2混合ガス、H2Oガスから選択されたものであることを特徴とする請求項10または請求項11に記載の選択成長方法。
- 前記シリコン系絶縁膜はシリコン窒化膜であり、前記反応ガスは窒化剤であり、前記導電膜は窒化剤により窒化して気化する物質であることを特徴とする請求項1から請求項9のいずれか1項に記載の選択成長方法。
- 前記導電膜は、ゲルマニウム膜であることを特徴とする請求項13に記載の選択成長方法。
- 前記窒化剤は、アンモニアガス、ヒドラジン系ガス、水素ガスから選択されたものであることを特徴とする請求項13または請求項14に記載の選択成長方法。
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