JP2016086145A - 選択成長方法および基板処理装置 - Google Patents
選択成長方法および基板処理装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 title claims description 22
- 239000010408 film Substances 0.000 claims abstract description 178
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000002485 combustion reaction Methods 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000003054 catalyst Substances 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 104
- 229910052799 carbon Inorganic materials 0.000 claims description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 49
- 229910052721 tungsten Inorganic materials 0.000 claims description 37
- 229910052736 halogen Inorganic materials 0.000 claims description 19
- 150000002367 halogens Chemical class 0.000 claims description 19
- 229930195733 hydrocarbon Natural products 0.000 claims description 18
- 150000002430 hydrocarbons Chemical class 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 16
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- 230000007246 mechanism Effects 0.000 claims description 13
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- 238000010438 heat treatment Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000010953 base metal Substances 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052713 technetium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 36
- 239000010937 tungsten Substances 0.000 description 36
- 229910004298 SiO 2 Inorganic materials 0.000 description 32
- 239000000460 chlorine Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
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- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
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- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- OOXOBWDOWJBZHX-UHFFFAOYSA-N n-(dimethylaminosilyl)-n-methylmethanamine Chemical compound CN(C)[SiH2]N(C)C OOXOBWDOWJBZHX-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 230000009466 transformation Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
・選択成長させる下地が限定されること
・界面の清浄化が必要であること
・高温プロセスが必要であること
といった制約があり、現在求められているより微細な半導体装置構造への適応は困難である、という事情がある。
(第1の実施形態)
<選択成長方法>
図1はこの発明の第1の実施形態に係る選択成長方法の一例を示す流れ図、図2A〜図2Eは図1に示すシーケンス中の被処理体の状態を概略的に示す断面図である。
C4H6 → C4H5 + H …(1)
Cl2 → 2Cl …(2)
C4H5 + Cl → C4H5Cl …(3)
C4H5Cl + C4H6 → アモルファスのカーボン …(4)
C4H6 + Cl2 → C4H5Cl + HCl …(5)
C4H5Cl + C4H6 → アモルファスのカーボン …(6)
(1)+(2)+(3)の反応は、(5)の反応に比較して非常に速い。
((1)+(2)+(3)>>(5))
(4)の反応は、(6)の反応と同じである。
((4)=(6))
つまり、(1)+(2)+(3)の反応は、(5)の反応に比較して非常に速いため、SiO2膜上とタングステン膜上とでは、カーボン膜のインキュベーション時間に差が発生する。
C4H6ガス流量: 200sccm
Cl2ガス流量: 50sccm
処 理 時 間: 30〜180min
処 理 温 度: 350℃
処 理 圧 力: 800Pa(約6Torr)
である。なお、C4H6ガス流量は100〜400sccmの範囲から選ばれること、Cl2ガス流量は1〜100sccmの範囲から選ばれること、処理圧力は1〜20Torr(133.3Pa〜2666Pa)の範囲から選ばれることが、実用的な観点から好ましい。
2DMASガス流量: 200sccm
O3ガス流量 : 1000sccm
処 理 時 間: 30〜180min
処 理 温 度: 350℃
処 理 圧 力: 133.3Pa(1Torr)
である。
<選択成長方法>
第1の実施形態では、カーボン膜4の選択成長およびSiO2膜5の選択成長を、それぞれ1回とした。しかし、カーボン膜4の選択成長およびSiO2膜5の選択成長は、1回に限られることはない。2回以上行って、カーボン膜4およびSiO2膜5の膜厚を設計された膜厚まで厚く積むことも可能である。第2の実施形態は、そのような一例である。
C4H6ガス流量: 200sccm
Cl2ガス流量 : 50sccm
処 理 時 間: 180min
処 理 温 度: 350℃
処 理 圧 力: 800Pa(約6Torr)
である。ステップ3の処理条件は、ステップ1の処理条件と同じであってもよいが、選択成長させる下地がタングステン膜3からカーボン膜4へと変わっているので、適宜変更されてもよい。
2DMASガス流量: 200sccm
O3ガス流量 : 1000sccm
処 理 時 間: 30min
処 理 温 度: 350℃
処 理 圧 力: 133.3Pa(1Torr)
である。ステップ4の処理条件は、ステップ1の処理条件と同じでよい。
<選択成長方法>
第1、第2の実施形態では、カーボン膜4の下地がタングステンであった。タングステン膜のような触媒作用がある金属としては、タングステン(W)の他、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Si、Zr、Nb、Mo、Tc、Ru、Rh、Pd、In、Sn、Hf、Ta、Re、Os、Ir、Pt、Au等を挙げることができる。
SiH4ガス流量: 200sccm
処 理 時 間: 60min
処 理 温 度: 350℃
処 理 圧 力: 133.3Pa(1Torr)
である。
WF6ガス流量: 200sccm
処 理 時 間: 30min
処 理 温 度: 350℃
処 理 圧 力: 133.3Pa(1Torr)
である。
第4の実施形態は、上記第1〜第3の実施形態に係る選択成長方法を実施することが可能な基板処理装置の一例に関する。
Claims (11)
- 絶縁膜と金属とが露出している下地上に、薄膜を選択的に成長させる選択成長方法であって、
(1) 前記下地の金属を触媒に用いて、前記下地の金属上に、燃焼により減膜する膜を選択的に成長させる工程と、
(2) 前記燃焼により減膜する膜を燃焼させながら、前記下地の絶縁膜上に、シリコン酸化物膜を選択的に成長させる工程と
を、具備することを特徴とする選択成長方法。 - 前記(2)工程の後、
(3) 残存している前記燃焼により減膜する膜上に、新たな燃焼により減膜する膜を選択的に成長させる工程と、
(4) 前記新たな燃焼により減膜する膜を燃焼させながら、前記シリコン酸化物膜上に、新たなシリコン酸化物膜を選択的に成長させる工程と
を、さらに具備し、
前記(3)工程および(4)工程を1回、又は設定された回数まで繰り返し行うことを特徴とする請求項1に記載の選択成長方法。 - 前記(2)工程の後、
(5) 前記シリコン酸化物膜をマスクに用いて、前記燃焼により減膜する膜を除去する工程
を、さらに具備することを特徴とする請求項1に記載の選択成長方法。 - 前記(4)工程の後、
(6) 前記新たなシリコン酸化物膜をマスクに用いて、前記新たな燃焼により減膜する膜および前記燃焼により減膜する膜を除去する工程
を、さらに具備することを特徴とする請求項2に記載の選択成長方法。 - 前記燃焼により減膜する膜は、カーボン膜又はルテニウム膜であることを特徴とする請求項1から請求項4のいずれか一項に記載の選択成長方法。
- 前記燃焼により減膜する膜がカーボン膜であるとき、
前記カーボン膜の原料ガスは、炭化水素ガスと、ハロゲンガスもしくはハロゲン化炭化水素ガスを含み、
前記金属は、前記炭化水素ガス中の炭化水素を吸着し、前記ハロゲンガスもしくはハロゲン化炭化水素ガスの分子を分解させるものであることを特徴とする請求項5に記載の選択成長方法。 - 前記ハロゲンは、ClおよびIのいずれかであることを特徴とする請求項6に記載の選択成長方法。
- 前記シリコン酸化物膜の原料ガスは、シリコンを含むガスと、酸素を含むガスとを含むことを特徴とする請求項1から請求項7のいずれか一項に記載の選択成長方法。
- 前記下地の金属の露出面には、前記下地の金属の内部に存在する金属よりも低温な状態で、前記炭化水素ガス中の炭化水素の吸着と、前記ハロゲンガスもしくはハロゲン化炭化水素ガスの分子の分解とを促進させる別の金属の層が形成されていることを特徴とする請求項6から請求項8のいずれか一項に記載の選択成長方法。
- 前記金属は、
Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Si、Zr、Nb、Mo、Tc、Ru、Rh、Pd、In、Sn、Hf、Ta、W、Re、Os、Ir、Pt、Au
のいずれか一つを含むことを特徴とする請求項1から請求項9のいずれか一項に記載の選択成長方法。 - 被処理体の、絶縁膜と金属とが露出している被処理面上に、薄膜を選択的に成長させる基板処理装置であって、
前記被処理体を収容する処理室と、
前記処理室内に、炭化水素ガス、ハロゲンガスもしくはハロゲン化炭化水素ガス、シリコンを含むガス、および酸素を含むガスを少なくとも供給するガス供給機構と、
前記処理室内を加熱する加熱装置と、
前記処理室内を排気する排気装置と、
前記ガス供給機構、前記加熱装置、前記排気装置を制御するコントローラと、を備え、
前記コントローラが、前記処理室内において、請求項1から請求項10のいずれか一項に記載された選択成長方法が前記被処理体に対して実施されるように、前記ガス供給機構、前記加熱装置、前記排気装置を制御することを特徴とする基板処理装置。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017212294A (ja) * | 2016-05-24 | 2017-11-30 | 東京エレクトロン株式会社 | カーボン膜の成膜方法および成膜装置 |
KR20180111537A (ko) | 2017-03-30 | 2018-10-11 | 도쿄엘렉트론가부시키가이샤 | 선택 성장 방법 |
JP2018182328A (ja) * | 2017-04-12 | 2018-11-15 | 東京エレクトロン株式会社 | 誘電体基板上の誘電体材料の選択的な縦方向成長の方法 |
KR20190037126A (ko) | 2017-09-28 | 2019-04-05 | 도쿄엘렉트론가부시키가이샤 | 선택 성막 방법 및 반도체 장치의 제조 방법 |
JP2019195059A (ja) * | 2018-05-02 | 2019-11-07 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10176984B2 (en) | 2017-02-14 | 2019-01-08 | Lam Research Corporation | Selective deposition of silicon oxide |
US10242866B2 (en) | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
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US10460930B2 (en) | 2017-11-22 | 2019-10-29 | Lam Research Corporation | Selective growth of SiO2 on dielectric surfaces in the presence of copper |
WO2019169335A1 (en) | 2018-03-02 | 2019-09-06 | Lam Research Corporation | Selective deposition using hydrolysis |
TWI757659B (zh) * | 2018-11-23 | 2022-03-11 | 美商應用材料股份有限公司 | 碳膜的選擇性沉積及其用途 |
US11702751B2 (en) | 2019-08-15 | 2023-07-18 | Applied Materials, Inc. | Non-conformal high selectivity film for etch critical dimension control |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60249334A (ja) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | 薄膜形成方法 |
JPS62291913A (ja) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | 薄膜の形成方法 |
JP2009032766A (ja) * | 2007-07-25 | 2009-02-12 | Tokyo Electron Ltd | 成膜方法、成膜装置、および記憶媒体 |
JP2011190156A (ja) * | 2010-03-16 | 2011-09-29 | Nagoya Univ | カーボンナノウォールの選択成長方法、およびカーボンナノウォールを用いた電子デバイス |
JP2014033186A (ja) * | 2012-07-09 | 2014-02-20 | Tokyo Electron Ltd | カーボン膜の成膜方法および成膜装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050274996A1 (en) * | 2004-06-14 | 2005-12-15 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
JP2009094279A (ja) * | 2007-10-09 | 2009-04-30 | Elpida Memory Inc | ホールパターンの形成方法および半導体装置の製造方法 |
EP2104135B1 (en) | 2008-03-20 | 2013-06-12 | Siltronic AG | A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer |
JP5238775B2 (ja) * | 2010-08-25 | 2013-07-17 | 株式会社東芝 | カーボンナノチューブ配線の製造方法 |
JP2012199520A (ja) * | 2011-03-10 | 2012-10-18 | Toshiba Corp | 半導体装置およびその製造方法 |
JP5931780B2 (ja) | 2013-03-06 | 2016-06-08 | 東京エレクトロン株式会社 | 選択エピタキシャル成長法および成膜装置 |
-
2014
- 2014-10-29 JP JP2014220157A patent/JP6317232B2/ja active Active
-
2015
- 2015-10-20 US US14/887,685 patent/US9512541B2/en active Active
- 2015-10-22 KR KR1020150147154A patent/KR101892337B1/ko active IP Right Grant
- 2015-10-26 TW TW104135017A patent/TWI625787B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60249334A (ja) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | 薄膜形成方法 |
JPS62291913A (ja) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | 薄膜の形成方法 |
JP2009032766A (ja) * | 2007-07-25 | 2009-02-12 | Tokyo Electron Ltd | 成膜方法、成膜装置、および記憶媒体 |
JP2011190156A (ja) * | 2010-03-16 | 2011-09-29 | Nagoya Univ | カーボンナノウォールの選択成長方法、およびカーボンナノウォールを用いた電子デバイス |
JP2014033186A (ja) * | 2012-07-09 | 2014-02-20 | Tokyo Electron Ltd | カーボン膜の成膜方法および成膜装置 |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017212294A (ja) * | 2016-05-24 | 2017-11-30 | 東京エレクトロン株式会社 | カーボン膜の成膜方法および成膜装置 |
KR20180111537A (ko) | 2017-03-30 | 2018-10-11 | 도쿄엘렉트론가부시키가이샤 | 선택 성장 방법 |
CN108695151A (zh) * | 2017-03-30 | 2018-10-23 | 东京毅力科创株式会社 | 选择性沉积方法 |
JP2018170409A (ja) * | 2017-03-30 | 2018-11-01 | 東京エレクトロン株式会社 | 選択成長方法 |
CN108695151B (zh) * | 2017-03-30 | 2023-08-22 | 东京毅力科创株式会社 | 选择性沉积方法 |
US10546741B2 (en) | 2017-03-30 | 2020-01-28 | Tokyo Electron Limited | Selective growth method |
JP2018182328A (ja) * | 2017-04-12 | 2018-11-15 | 東京エレクトロン株式会社 | 誘電体基板上の誘電体材料の選択的な縦方向成長の方法 |
US10490443B2 (en) | 2017-09-28 | 2019-11-26 | Tokyo Electron Limited | Selective film forming method and method of manufacturing semiconductor device |
JP2019062142A (ja) * | 2017-09-28 | 2019-04-18 | 東京エレクトロン株式会社 | 選択成膜方法および半導体装置の製造方法 |
KR20190037126A (ko) | 2017-09-28 | 2019-04-05 | 도쿄엘렉트론가부시키가이샤 | 선택 성막 방법 및 반도체 장치의 제조 방법 |
JP2019195059A (ja) * | 2018-05-02 | 2019-11-07 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
JP7146690B2 (ja) | 2018-05-02 | 2022-10-04 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
JP2022177198A (ja) * | 2018-05-02 | 2022-11-30 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
JP7240549B2 (ja) | 2018-05-02 | 2023-03-15 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
JP2022531455A (ja) * | 2019-05-05 | 2022-07-06 | アプライド マテリアルズ インコーポレイテッド | 非金属表面への選択的堆積 |
US11680313B2 (en) | 2019-05-05 | 2023-06-20 | Applied Materials, Inc. | Selective deposition on non-metallic surfaces |
JP7326475B2 (ja) | 2019-05-05 | 2023-08-15 | アプライド マテリアルズ インコーポレイテッド | 非金属表面への選択的堆積 |
KR102677926B1 (ko) * | 2019-05-05 | 2024-06-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 비-금속성 표면들 상의 선택적 증착 |
JP2021040159A (ja) * | 2020-11-30 | 2021-03-11 | 東京エレクトロン株式会社 | 選択成長方法 |
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