JP2017510701A - W−Niスパッタリングターゲット - Google Patents
W−Niスパッタリングターゲット Download PDFInfo
- Publication number
- JP2017510701A JP2017510701A JP2016540675A JP2016540675A JP2017510701A JP 2017510701 A JP2017510701 A JP 2017510701A JP 2016540675 A JP2016540675 A JP 2016540675A JP 2016540675 A JP2016540675 A JP 2016540675A JP 2017510701 A JP2017510701 A JP 2017510701A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering target
- phase
- target according
- target
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 claims abstract description 42
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 53
- 239000013077 target material Substances 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 28
- 230000000930 thermomechanical effect Effects 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 22
- 238000005245 sintering Methods 0.000 claims description 19
- 238000007669 thermal treatment Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 238000007906 compression Methods 0.000 claims description 13
- 230000006835 compression Effects 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000005242 forging Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004663 powder metallurgy Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 107
- 239000012071 phase Substances 0.000 description 102
- 239000000463 material Substances 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000000576 coating method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 230000002411 adverse Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 229920001971 elastomer Polymers 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000010587 phase diagram Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001513 hot isostatic pressing Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000002490 spark plasma sintering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1017—Multiple heating or additional steps
- B22F3/1028—Controlled cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/17—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by forging
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0433—Nickel- or cobalt-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1524—Transition metal compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
Description
・W粉末及びNi粉末からなる粉末混合物が、圧力、温度、又は、圧力及び温度の適用によって、ブランクへと圧縮される圧縮ステップ。
・得られたブランクが、900〜750℃の温度範囲のうち少なくとも一部の温度範囲において、30K/分を上回る冷却速度で冷却される冷却ステップ。
・機械加工
・1個又は複数個の支持体への取付け
フィッシャー法による粒径が4μmのW粉末及びフィッシャー法による粒径が4.2μmのNi粉末を、原料として使用した。これらの粉末を、60重量%のW及び40重量%のNiの比率で、密閉容器に充填して、振とう混合機において1時間混合した。
実施例1と同様にして、円筒型粗形体を製造した。
実施例1及び実施例2と同様にして、円筒型粗形体を製造した。但し、W粉末及びNi粉末を、70重量%のW及び30重量%のNiの比率で使用した。
実施例1〜3と同様にして、円筒型粗形体を製造した。但し、W粉末及びNi粉末を、43重量%のW及び57重量%のNiの比率で使用した。熱機械的処理及び熱的処理は行なわなかった。焼結後、炉冷して、その際の900〜750℃の温度範囲における冷却速度は、約10K/分に達した。焼結後の密度は78%であって、ターゲット材料の硬度は、163 HV10であった。低い硬度値は、低密度に起因する。268μg/gの酸素含有量が測定された。
実施例1及び実施例2と同様にして、円筒型粗形体を製造した。但し、1,200℃の温度で焼結した。熱機械的処理及び熱的処理は行なわなかった。焼結後、炉冷して、その際の900〜750℃の温度範囲における冷却速度は、約10K/分に達した。焼結後の密度は77%であって、ターゲット材料の硬度は、165 HV10であった。低い硬度値は、低密度に起因する。96μg/gの酸素含有量が測定された。
実施例1及び実施例2と同様にして、円筒型粗形体を製造した。但し、1,000℃の温度で焼結した。熱機械的処理及び熱的処理は行なわなかった。焼結後、炉冷して、その際の900〜750℃の温度範囲における冷却速度は、約10K/分に達した。焼結後の密度は77%であって、ターゲット材料の硬度は74 HV10であった。120μg/gの酸素含有量が測定された。続いて、円筒型粗形体の1,300℃における芯棒上での鍛造を試みたものの、ターゲット材料の機械的不具合の為に、この試みを中止した。組織並びに相の面積割合及び粒径を測定することはできなかった。
Claims (15)
- 45〜75重量%のW、残部Ni及び通常の不純物を含有するスパッタリングターゲットであって、Ni(W)相及びW相を含有し、そして、金属間相を含有しないか、又はターゲット材料断面において測定される平均面積割合が10%を下回る金属間相を含有することを特徴とする、スパッタリングターゲット。
- 酸素含有量が100μg/gを下回ることを特徴とする、請求項1に記載のスパッタリングターゲット。
- 硬度が500 HV10を下回ることを特徴とする、請求項1又は2に記載のスパッタリングターゲット。
- 円筒型スパッタリングターゲットであることを特徴とする、請求項1〜3のいずれか1項に記載のスパッタリングターゲット。
- 一体型の円筒型スパッタリングターゲットであることを特徴とする、請求項1〜4のいずれか1項に記載のスパッタリングターゲット。
- ターゲット材料断面において測定されるW相の面積割合が15〜45%であることを特徴とする、請求項1〜5のいずれか1項に記載のスパッタリングターゲット。
- W相の平均粒径が40μmを下回ることを特徴とする、請求項1〜6のいずれか1項に記載のスパッタリングターゲット。
- Ni(W)相において、主変形方向に対して平行に<110>組織を有することを特徴とする、請求項1〜7のいずれか1項に記載のスパッタリングターゲット。
- エレクトロクロミック層の堆積のための、請求項1〜8のいずれか1項に記載されたスパッタリングターゲットの、使用。
- 請求項1〜8のいずれか1項に記載されたスパッタリングターゲットの、太陽光吸収層、高温酸化に対する保護層又は拡散バリア層を堆積するための使用。
- 粉末冶金プロセスによるW−Niスパッタリングターゲットの製造方法であって、少なくとも次のステップを含むことを特徴とする製造方法:
・W粉末及びNi粉末からなる粉末混合物が、圧力、温度又は圧力及び温度の適用によって、圧縮されてブランクとなる圧縮ステップ。
・得られたブランクが、900〜750℃の温度範囲のうち少なくとも一部の温度範囲において、30K/分を上回る冷却速度で冷却される冷却ステップ。 - 前記圧縮ステップが、1,100〜1,450℃の温度における焼結により実行されることを特徴とする、請求項11に記載のW−Niスパッタリングターゲットの製造方法。
- 前記得られたブランクに対して、圧縮ステップと冷却ステップとの間に、熱機械的処理又は熱的処理が行なわれることを特徴とする、請求項11又は12に記載のW−Niスパッタリングターゲットの製造方法。
- 前記の熱機械的処理又は熱的処理が970〜1,450℃の温度において行なわれることを特徴とする、請求項13に記載のW−Niスパッタリングターゲットの製造方法。
- 前記の熱機械的処理又は熱的処理が少なくとも1つの鍛造ステップを含むことを特徴とする、請求項13又は14に記載のW−Niスパッタリングターゲットの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ATGM456/2013U AT14157U1 (de) | 2013-12-20 | 2013-12-20 | W-Ni-Sputtertarget |
ATGM456/2013 | 2013-12-20 | ||
PCT/AT2014/000225 WO2015089533A1 (de) | 2013-12-20 | 2014-12-17 | W-ni-sputtertarget |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017510701A true JP2017510701A (ja) | 2017-04-13 |
JP6511056B2 JP6511056B2 (ja) | 2019-05-08 |
Family
ID=53029098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016540675A Active JP6511056B2 (ja) | 2013-12-20 | 2014-12-17 | W−Niスパッタリングターゲット |
Country Status (9)
Country | Link |
---|---|
US (2) | US20170029934A1 (ja) |
EP (1) | EP3084517B1 (ja) |
JP (1) | JP6511056B2 (ja) |
KR (1) | KR102359630B1 (ja) |
CN (1) | CN105849633B (ja) |
AT (1) | AT14157U1 (ja) |
TR (1) | TR201908123T4 (ja) |
TW (1) | TWI622661B (ja) |
WO (1) | WO2015089533A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020066957A1 (ja) | 2018-09-26 | 2020-04-02 | Jx金属株式会社 | スパッタリングターゲット及びその製造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3431628A1 (en) | 2011-04-21 | 2019-01-23 | View, Inc. | Lithium sputter targets |
CN103717782A (zh) | 2011-06-30 | 2014-04-09 | 唯景公司 | 溅射靶和溅射方法 |
CN105506551B (zh) * | 2015-11-26 | 2017-09-19 | 厦门虹鹭钨钼工业有限公司 | 一种用于电致变色玻璃镀膜的钨镍合金靶材的制备方法 |
KR102633691B1 (ko) * | 2017-04-21 | 2024-02-05 | 플란제 콤포지트 마테리얼스 게엠베하 | 초합금 스퍼터링 타겟 |
CN109825752A (zh) * | 2019-03-22 | 2019-05-31 | 陕西瑞有金属科技有限公司 | 一种低熔点镍钨中间合金及其制备工艺 |
CN110885963B (zh) * | 2019-10-09 | 2022-03-04 | 安泰天龙钨钼科技有限公司 | 一种钨镍合金靶材及其制备方法 |
EP3825427B1 (en) | 2019-11-25 | 2022-07-13 | Materion Advanced Materials Germany GmbH | Niw(x) sputtering target with improved structure |
TWI739419B (zh) * | 2020-05-08 | 2021-09-11 | 崑山科技大學 | 電致變色材料的製作方法 |
CN113549881A (zh) * | 2021-05-31 | 2021-10-26 | 洛阳科威钨钼有限公司 | 一种钨镍合金靶材的制备方法 |
CN114075658B (zh) * | 2021-11-16 | 2023-09-08 | 宁波江丰电子材料股份有限公司 | 一种钨镍合金溅射靶材及其热压制备方法 |
CN114807876B (zh) * | 2022-04-26 | 2023-09-29 | 广州市尤特新材料有限公司 | 一种电控变色玻璃用靶材及其制备方法 |
CN115961165B (zh) * | 2022-10-26 | 2024-06-25 | 西南科技大学 | 一种高位错密度钨合金材料的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH059641A (ja) * | 1991-07-04 | 1993-01-19 | Sumitomo Electric Ind Ltd | 微細結晶粒タングステン合金およびその製造方法 |
JPH05508509A (ja) * | 1990-07-03 | 1993-11-25 | トーソー エスエムディー,インコーポレーテッド | コンパクトディスクのコーティング用改良スパッタリングターゲットとその使用方法及びその製造方法 |
JP2006235632A (ja) * | 2005-02-23 | 2006-09-07 | Sage Electrochromics Inc | エレクトロクロミックデバイスおよびその製造方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS509541A (ja) | 1973-05-31 | 1975-01-31 | ||
US3979209A (en) * | 1975-02-18 | 1976-09-07 | The United States Of America As Represented By The United States Energy Research And Development Administration | Ductile tungsten-nickel alloy and method for making same |
DE2923174A1 (de) * | 1979-06-08 | 1980-12-11 | Demetron | Sputtertarget auf traegerplatte |
JP2922022B2 (ja) | 1991-07-05 | 1999-07-19 | 新日本製鐵株式会社 | 転炉炉下への落下物処理装置 |
JP3041050B2 (ja) * | 1995-06-05 | 2000-05-15 | ポハング アイアン アンド スチール カンパニー リミテッド | 二相ステンレス鋼およびその製造法 |
US5712046A (en) | 1995-07-04 | 1998-01-27 | Sumitomo Metal Industries, Ltd. | Titanium ring for an electrodeposition drum and a method for its manufacture |
DE19527476A1 (de) * | 1995-07-27 | 1997-01-30 | Leybold Ag | Sputtertarget, insbesondere mit großen Abmessungen, sowie ein Verfahren zu seiner Herstellung |
CN2280717Y (zh) * | 1996-08-27 | 1998-05-06 | 深圳市创益科技发展有限公司 | 透明导电膜平面磁控溅射靶板 |
JP2000169923A (ja) | 1998-12-04 | 2000-06-20 | Sumitomo Metal Mining Co Ltd | W−Ni系ターゲット材料、電極材料、及び実装部品 |
US20030031928A1 (en) | 1999-05-20 | 2003-02-13 | Saint-Gobain Vitrage | Electrochemical device |
FR2793888B1 (fr) | 1999-05-20 | 2002-06-28 | Saint Gobain Vitrage | Dispositif electrochimique |
CN1214129C (zh) * | 1999-12-28 | 2005-08-10 | 东芝株式会社 | 真空成膜装置用部件及使用该部件的真空成膜装置及其觇板装置 |
US8252126B2 (en) * | 2004-05-06 | 2012-08-28 | Global Advanced Metals, Usa, Inc. | Sputter targets and methods of forming same by rotary axial forging |
CN1873049A (zh) * | 2005-05-31 | 2006-12-06 | 应用材料股份有限公司 | 弹性连接一大面积靶的方法 |
CN1312301C (zh) * | 2005-09-23 | 2007-04-25 | 北京工业大学 | 用于高温超导的Ni-W合金的制备方法 |
JP4954816B2 (ja) * | 2007-07-18 | 2012-06-20 | 山陽特殊製鋼株式会社 | Ni−W系中間層用スパッタリングターゲット材の製造方法 |
JP5305137B2 (ja) | 2007-12-05 | 2013-10-02 | 日立金属株式会社 | 垂直磁気記録媒体のNi合金中間層を形成するためのNi−W系焼結ターゲット材 |
US20100140084A1 (en) * | 2008-12-09 | 2010-06-10 | Chi-Fung Lo | Method for production of aluminum containing targets |
TWI387497B (zh) * | 2009-01-22 | 2013-03-01 | China Steel Corp | Manufacturing method of nickel alloy target |
US8432603B2 (en) * | 2009-03-31 | 2013-04-30 | View, Inc. | Electrochromic devices |
US8582193B2 (en) | 2010-04-30 | 2013-11-12 | View, Inc. | Electrochromic devices |
SG172268A1 (en) | 2009-04-17 | 2011-07-28 | Jx Nippon Mining & Metals Corp | Barrier film for semiconductor wiring, sintered compact sputtering target and method of producing the sputtering target |
TWI387661B (zh) * | 2009-07-22 | 2013-03-01 | China Steel Corp | Manufacturing method of nickel alloy target |
EP2564266B1 (en) * | 2010-04-30 | 2020-02-12 | View, Inc. | Electrochromic devices |
WO2011137104A1 (en) * | 2010-04-30 | 2011-11-03 | Soladigm, Inc. | Electrochromic devices |
KR20130074156A (ko) * | 2011-12-26 | 2013-07-04 | 삼성코닝정밀소재 주식회사 | 반사유리 및 이의 제조방법 |
KR101286170B1 (ko) * | 2011-12-26 | 2013-07-15 | 삼성코닝정밀소재 주식회사 | 써모크로믹 글라스 및 이의 제조방법 |
TWI640703B (zh) | 2017-12-27 | 2018-11-11 | 立淵機械股份有限公司 | 動力切換裝置 |
-
2013
- 2013-12-20 AT ATGM456/2013U patent/AT14157U1/de not_active IP Right Cessation
-
2014
- 2014-11-07 TW TW103138686A patent/TWI622661B/zh active
- 2014-12-17 US US15/106,393 patent/US20170029934A1/en not_active Abandoned
- 2014-12-17 KR KR1020167015656A patent/KR102359630B1/ko active IP Right Grant
- 2014-12-17 TR TR2019/08123T patent/TR201908123T4/tr unknown
- 2014-12-17 JP JP2016540675A patent/JP6511056B2/ja active Active
- 2014-12-17 WO PCT/AT2014/000225 patent/WO2015089533A1/de active Application Filing
- 2014-12-17 EP EP14838908.3A patent/EP3084517B1/de active Active
- 2014-12-17 CN CN201480069873.6A patent/CN105849633B/zh active Active
-
2021
- 2021-04-20 US US17/235,003 patent/US11746409B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05508509A (ja) * | 1990-07-03 | 1993-11-25 | トーソー エスエムディー,インコーポレーテッド | コンパクトディスクのコーティング用改良スパッタリングターゲットとその使用方法及びその製造方法 |
JPH059641A (ja) * | 1991-07-04 | 1993-01-19 | Sumitomo Electric Ind Ltd | 微細結晶粒タングステン合金およびその製造方法 |
JP2006235632A (ja) * | 2005-02-23 | 2006-09-07 | Sage Electrochromics Inc | エレクトロクロミックデバイスおよびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020066957A1 (ja) | 2018-09-26 | 2020-04-02 | Jx金属株式会社 | スパッタリングターゲット及びその製造方法 |
KR20210053940A (ko) | 2018-09-26 | 2021-05-12 | 제이엑스금속주식회사 | 스퍼터링 타깃 및 그 제조 방법 |
US20220033960A1 (en) * | 2018-09-26 | 2022-02-03 | Jx Nippon Mining & Metals Corporation | Sputtering Target and Method for Producing Same |
Also Published As
Publication number | Publication date |
---|---|
EP3084517B1 (de) | 2019-03-13 |
US20170029934A1 (en) | 2017-02-02 |
CN105849633A (zh) | 2016-08-10 |
TR201908123T4 (tr) | 2019-06-21 |
TWI622661B (zh) | 2018-05-01 |
CN105849633B (zh) | 2019-09-24 |
JP6511056B2 (ja) | 2019-05-08 |
EP3084517A1 (de) | 2016-10-26 |
WO2015089533A1 (de) | 2015-06-25 |
KR102359630B1 (ko) | 2022-02-07 |
AT14157U1 (de) | 2015-05-15 |
KR20160099556A (ko) | 2016-08-22 |
US20210246544A1 (en) | 2021-08-12 |
US11746409B2 (en) | 2023-09-05 |
TW201534744A (zh) | 2015-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11746409B2 (en) | Process for producing and using a W—Ni sputtering target | |
TWI567217B (zh) | 鐵鈷系合金濺鍍靶材及其製造方法 | |
EP3015566B1 (en) | Magnetic material sputtering target and method for producing same | |
KR102367663B1 (ko) | 산화물 스퍼터링 타깃 및 그 제조 방법, 그리고 당해 산화물 스퍼터링 타깃을 사용하여 성막한 산화물 박막 | |
TWI550117B (zh) | 濺鍍靶及濺鍍靶之製造方法 | |
US10519538B2 (en) | Sputtering target comprising Al—Te—Cu—Zr alloy, and method for producing same | |
US20040062675A1 (en) | Fabrication of ductile intermetallic sputtering targets | |
CN113652656A (zh) | 一种钽-二氧化硅溅射靶材的制备方法 | |
JP2016069700A (ja) | Ti−Al合金スパッタリングターゲット | |
JP2019143179A (ja) | スパッタリングターゲット | |
TW202138585A (zh) | 濺鍍靶材及其製造方法 | |
CN113088901A (zh) | 一种镍铬合金溅射靶材及其热等静压制备方法 | |
JP2015227261A (ja) | 酸化物焼結体及びその製造方法、並びに酸化物膜 | |
WO2022097635A1 (ja) | スパッタリングターゲット、スパッタリングターゲットの製造方法、および、光学機能膜 | |
JP2021521334A (ja) | ターゲット及びターゲットの製造方法 | |
JP2019065383A (ja) | MoNbターゲット材 | |
WO2021241522A1 (ja) | 金属-Si系粉末、その製造方法、並びに金属-Si系焼結体、スパッタリングターゲット及び金属-Si系薄膜の製造方法 | |
WO2024128075A1 (ja) | スパッタリングターゲットおよびその製造方法 | |
CN116334563A (zh) | 溅射靶及制造溅射靶的方法 | |
TW201734238A (zh) | 濺鍍靶 | |
JP2022075552A (ja) | スパッタリングターゲット、スパッタリングターゲットの製造方法、および、光学機能膜 | |
KR20230129054A (ko) | 스퍼터링 타깃 및 그 제조 방법 | |
JP2015074789A (ja) | 酸化ニオブ系スパッタリングターゲット及びその製造方法 | |
JP2014177675A (ja) | 希土類磁石用スパッタリングターゲット及びその製造方法 | |
JP2020147822A (ja) | MgO−TiO系スパッタリングターゲットの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171027 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180605 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180829 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181024 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190326 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190405 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6511056 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |