JP2021521334A - ターゲット及びターゲットの製造方法 - Google Patents
ターゲット及びターゲットの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 claims abstract description 50
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000203 mixture Substances 0.000 claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 13
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 7
- 238000002490 spark plasma sintering Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000002601 radiography Methods 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 abstract 4
- 230000000704 physical effect Effects 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000006115 industrial coating Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
−二ホウ化タンタル(TaB2)及びホウ化タングステン(WB2及び/又はW2B5)からなる混合物95モル%〜100モル%と、
−必要に応じて炭素(C)0.01モル%〜5モル%と
からなる。
−粒径d50値が2.5μmのTaB2
−粒径d50値が9.4μmのWB2及び/又はW2B5
−粒径が6μm未満の黒鉛粉末。
Claims (12)
- 物理気相成長用のターゲットであって、
以下の化学組成:
−以下の化合物のうちの少なくとも2つからなる混合物95モル%〜100モル%:二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相、
−炭素(C)0.01モル%〜5モル%、
−特に、二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相以外のホウ化物0.01モル%未満、
を有し、
ここで、金属純度について、二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相からなる前記混合物並びに炭素(C)からの合計が、少なくとも99.8モル%であり、
且つ以下の物理的特性:
−先に定義した化学組成の理論密度の90%超、好ましくは95%超、の密度、
−10マイクロメートル未満、好ましくは3マイクロメートル未満、の二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相からの前記混合物の粒子の平均粒径
を有する、
物理気相成長用のターゲット。 - 二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相からの前記混合物における、タンタル(Ta)対タングステン(W)のモル比が、1:99〜99:1の範囲、好ましくは10:90〜90:10の範囲、にある請求項1に記載のターゲット。
- 炭素(C)が黒鉛の形態で存在する、請求項1又は2に記載のターゲット。
- 二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相のみがX線撮影で識別可能な相の形態で存在する、請求項1〜3のいずれか1項に記載のターゲット。
- 二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相が、前記ターゲット中に均質に存在しており、そのため、それぞれ少なくとも1mm2のサイズの正方形又は円形の異なる測定領域を少なくとも5つ選んだ場合、前記それぞれの測定領域の表面で決定される平均化学組成が、選ばれた全測定領域から計算される平均化学組成から、20%よりも多くは、好ましくは10%よりも多くは、逸脱していない、請求項1〜4のいずれか1項に記載のターゲット。
- 前記ターゲットのX線撮影検査において、優先的な結晶学的粒子配向を有しない等方性構造が確認でき、その際、二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相からなる粒子のアスペクト比が、1.5未満、好ましくは1.2未満、特に好ましくは実質的に1である、請求項1〜5のいずれか1項に記載のターゲット。
- タンタル(Ta)、タングステン(W)、ホウ素(B)及び炭素(C)以外の必要に応じて存在する化学元素が、二ホウ化タンタル(TaB2)及び/又はホウ化タングステン(WB2及び/又はW2B5)及び/又は二ホウ化タンタル(TaB2)とホウ化タングステン(WB2及び/又はW2B5)との混合相からの前記混合物の組織中に溶解しており、X線撮影で別個の相として検出され得ない、請求項1〜6のいずれか1項に記載のターゲット。
- 前記ターゲットのHV30ビッカース硬さが、1800HV30超、好ましくは2300HV30超、である、請求項1〜7のいずれか1項に記載のターゲット。
- 物理気相成長用のターゲット、特に請求項1〜8のいずれか1項に記載のターゲット、の製造方法であって、
−粉末形態で存在する二ホウ化タンタル(TaB2)、粉末形態で存在するホウ化タングステン(WB2及び/又はW2B5)及び
−必要に応じて粉末状の炭素(炭素が不純物として存在していない場合)
が、混合され、必要に応じて機械的に粉砕され、そのようにして作られた粉末バッチが、成形金型内で熱間プレス又はスパークプラズマ焼結(SPS)により圧縮される、
製造方法において、
前記粉末バッチが、
−二ホウ化タンタル(TaB2)及びホウ化タングステン(WB2及び/又はW2B5)からの混合物95モル%〜100モル%、及び
−必要に応じて、炭素(C)0.01モル%〜5モル%
からなること、ここで、金属純度について、二ホウ化タンタル(TaB2)及びホウ化タングステン(WB2及び/又はW2B5)からなる前記混合物並びに炭素(C)からの合計が、少なくとも99.8モル%であること、
及び
前記熱間プレス又はスパークプラズマ焼結(SPS)が、少なくとも1,750℃、好ましくは少なくとも1,850℃、特に好ましくは少なくとも1,950℃、の温度で行なわれることを
特徴とする、製造方法。 - 前記熱間プレス又はスパークプラズマ焼結(SPS)が、少なくとも20MPa、好ましくは少なくとも30MPa、の圧力で行なわれる、請求項9に記載の製造方法。
- 前記熱間プレス又はスパークプラズマ焼結(SPS)が、真空中又は不活性保護ガス雰囲気中で行なわれる、請求項9又は10に記載の製造方法。
- 基材上に薄層を堆積するための物理気相成長法(PVD)における、請求項1〜8のいずれか1項に記載のターゲットの使用。
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