JP2010080914A - 樹脂封止型半導体装置とその製造方法、リードフレーム - Google Patents
樹脂封止型半導体装置とその製造方法、リードフレーム Download PDFInfo
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- JP2010080914A JP2010080914A JP2009108812A JP2009108812A JP2010080914A JP 2010080914 A JP2010080914 A JP 2010080914A JP 2009108812 A JP2009108812 A JP 2009108812A JP 2009108812 A JP2009108812 A JP 2009108812A JP 2010080914 A JP2010080914 A JP 2010080914A
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Abstract
【解決手段】リードフレーム1上のワイヤボンディング部等をワイヤボンディング方向に延在し、連結リード9等でリードフレーム1の外枠8に連結することにより、超音波Alワイヤボンディング時の超音波振動力の発散を阻止し、Alワイヤとワイヤボンディング部等の強固な接合を形成する。また、樹脂封止工程終了後、外枠8を切断するが、その切断残りが樹脂パッケージ12の側面に存在した場合でも、連結リード9等と他の吊りリード5c等の間の外枠8に切欠き15等を設けることにより、連結リード9等と吊りリード5c等の連結を防止する。
【選択図】図2
Description
この場合、リードフレームが薄くなると、半導体チップや受動素子のダイボンドやワイヤボンデングの際の力により、リードフレームが変形する恐れがある。この問題に対して、吊りリードを設けて、当該吊りリードをパッケージの外部に配置される、頑強なリードフレームの外枠に接続し、機械的強度を補強して対処している。
本発明の第1の実施形態について、以下に、図面に従って説明する。
まず、リードフレーム1を準備して、大電流が流れ、発熱量も多いパワー系半導体チップ2を、ハンダプリフォーム等を使用して、リードフレーム1の、パワー系半導体チップ2を搭載すべきアイランド13にダイボンドする。この場合、リードフレーム1はCu素材にNiメッキ等をしたものが使用される。また、コントローラ用半導体チップ3は、消費電力も小さいことからAgペースト等で、コントローラ用半導体チップ3が搭載されるべきアイランド13にダイボンドされる。チップコンデンサ4のような受動素子も、同様に、Agペーストでリードフレーム1のアイランド13及びインナーリード1bに接着される。Agペーストで接着する場合は、リードフレーム1もAgメッキ等がされる。
第2の実施形態についての説明に先立ち、樹脂封止工程及びリードフレーム1の外枠8の切断工程について、その内容と問題点について検討する。樹脂封止工程では図4に示すように、樹脂封止装置の上金型100と下金型101の間の空間に、Alワイヤ6a等でワイヤボンディングされた半導体チップ2等が搭載されたリードフレーム1を挟み込み、樹脂注入を行う。図4では、左側のタイバー11が上金型100と下金型101に挟まれ、ダムバーとしての役割を果たし、樹脂が左側から樹脂パッケージ12の外部に流出するのを阻止している。また、右側はリードフレーム1の外枠8が上金型100と下金型101に挟まれ、樹脂が右側から樹脂パッケージ12の外部に流出するのを阻止している。手前側、奥側も同様に外枠8により樹脂が樹脂パッケージ12の外部に流出するのを阻止している。
そして、樹脂パッケージ12の端部に接する、上金型100と下金型101に挟まれたリードフレーム1の外枠8には、当該外枠8の内側から外側に向かう切欠き15,16が形成されているのが示されている。
1a アウターリード
1b インナーリード
2 パワー系半導体チップ
3 コントローラ用半導体チップ
4 チップコンデンサ
5a,5b,5c 吊りリード
6a,6b Alワイヤ
7a,7b,7c Alワイヤ
8 リードフレーム外枠
9,10 連結リード
11 タイバー
12 樹脂パッケージ
13 アイランド
14a,14b,14c リードフレームのワイヤボンディング部
15,16 切欠き
17,18 樹脂バリ
100 上金型
101 下金型
Claims (11)
- リードフレーム上のアイランドに半導体チップをダイボンドする工程と、
前記半導体チップと前記リードフレームをAlワイヤで超音波ワイヤボンディングする工程と、
前記半導体チップがダイボンドされた前記リードフレームを樹脂封止する工程と、を有し、
前記リードフレーム上のワイヤボンディング部が前記超音波の振動方向に延在していることを特徴とする樹脂封止型半導体装置の製造方法。 - 前記超音波の振動方向に延在している前記リードフレーム上のワイヤボンディング部が前記リードフレームの外枠と連結していることを特徴とする請求項1に記載の樹脂封止型半導体装置の製造方法。
- 外枠に切欠きを有するリードフレームを準備する工程と、
前記リードフレームのアイランド上に半導体チップをダイボンドする工程と、
前記半導体チップと前記リードフレームとを電気的に接続する工程と、
前記半導体チップがダイボンドされた前記リードフレームを樹脂パッケージにより封止する工程と、
前記樹脂パッケージの外側に露出したタイバーを切断する工程と、を有し、
前記タイバーの切断と同時に前記リードフレームの前記外枠を当該外枠に設けた前記切欠き部分を含む位置で切断することを特徴とする樹脂封止型半導体装置の製造方法。 - 前記切欠きを2つの吊りリードの間の前記リードフレームの前記外枠に形成することを特徴とする請求項3に記載の樹脂封止型半導体装置の製造方法。
- 前記リードフレームのアイランド上にダイボンドされた半導体チップと、
前記半導体チップとAlワイヤで超音波ワイヤボンディングされた前記リードフレーム上のワイヤボンディング部と、
前記リードフレームを樹脂封止する樹脂パッケージと、を備え、
前記リードフレーム上の前記ワイヤボンディング部が、前記Alワイヤのボンディング方向に延在していることを特徴とする樹脂封止型半導体装置。 - 前記Alワイヤのボンディング方向に延在している前記リードフレーム上のワイヤボンディング部が前記リードフレームの外枠と連結していることを特徴とする請求項5に記載の樹脂封止型半導体装置。
- 半導体チップがダイボンド及び電気的に接続されたリードフレームと、
前記リードフレームを封止する樹脂パッケージと、を備え、
前記樹脂パッケージの外周に残存する前記リードフレームの外枠が当該リードフレームの当該外枠に設けられた切欠き部分で切断されていることを特徴とする樹脂封止型半導体装置。 - 前記リードフレームは前記半導体チップがダイボンドされたアイランドと、前記アイランドと前記外枠とを連結する複数の吊りリードと、を備え、
前記切欠き部分が2つの吊りリードの間の前記外枠に形成されたことを特徴とする請求項7に記載の樹脂封止型半導体装置。 - 半導体チップが搭載されるアイランドと、
前記半導体チップとAlワイヤで超音波ボンディングされるワイヤボンディング部と、
その外周に形成した外枠と、
前記アイランドと前記外枠を連結する複数の吊りリードと、を備え、
前記ワイヤボンディング部が前記超音波の振動方向に延在する連結リードを有し、前記外枠と連結していることを特徴とするリードフレーム。 - 半導体チップが搭載されるアイランドと、
リードフレームの外周を構成する外枠と、
前記アイランドと前記外枠を連結する複数の吊りリードと、を備え、
2つの前記吊りリードの間の前記外枠に切欠きが形成されたことを特徴とするリードフレーム。 - 前記外枠の前記切欠きを挟む前記2つ吊りリードの一方または双方が前記アイランドまたはインナーリードと前記外枠を連結する連結リードであることを特徴とする請求項9に記載のリードフレーム。
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Also Published As
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CN101661893A (zh) | 2010-03-03 |
US9171761B2 (en) | 2015-10-27 |
US8704342B2 (en) | 2014-04-22 |
CN102244016A (zh) | 2011-11-16 |
US20100052125A1 (en) | 2010-03-04 |
CN101661893B (zh) | 2011-07-27 |
US20150380344A1 (en) | 2015-12-31 |
CN102244016B (zh) | 2015-06-17 |
JP5634033B2 (ja) | 2014-12-03 |
US20140179063A1 (en) | 2014-06-26 |
US9905497B2 (en) | 2018-02-27 |
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