JP2008046655A - 液晶ディスプレイ - Google Patents
液晶ディスプレイ Download PDFInfo
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- JP2008046655A JP2008046655A JP2007243409A JP2007243409A JP2008046655A JP 2008046655 A JP2008046655 A JP 2008046655A JP 2007243409 A JP2007243409 A JP 2007243409A JP 2007243409 A JP2007243409 A JP 2007243409A JP 2008046655 A JP2008046655 A JP 2008046655A
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- 239000000758 substrate Substances 0.000 claims description 45
- 239000010409 thin film Substances 0.000 claims description 11
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/144—Devices controlled by radiation
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F2202/00—Materials and properties
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Abstract
【解決手段】複数のコンタクト・バイアスあるいは開口部を有するフォトイメージ形成型絶縁層をアドレス線とピクセル電極間に設け、両者を重複可能とする。この絶縁層により静電容量性クロストークを減少し、かつピクセル開口率を増加させる。フォトイメージ形成型絶縁層の厚さは、前記重複領域で約1.5μmから2.5μmであり、前記液晶ディスプレイは少なくとも約65%のピクセル口径比と約40から500μmのピクセル間隔を有する。
【選択図】図4
Description
A)第一基板、第二基板と、
B)上記第一基板と第二基板間に挟まれた液晶層と、
C)第一基板上に設けた薄膜トランジスタ(TFT)のアレイで、そのアレイに接続した複数のアドレス線を有し、
D)上記第一基板上に設けたほぼ透明のピクセル電極のアレイで、ピクセル電極のアレイの複数のピクセル電極は上記アドレス線の少なくとも1本と重複し、それによりLCDのピクセル口径比を増大させ、
E)TFTのソース電極と重複する領域および隣接する領域に少なくともある上記アドレス線とピクセル電極間の第一基板上に設けたフォトイメージ形成型絶縁層と、
F)上記フォトイメージ形成型絶縁層はフォトイメージ形成により上記絶縁層内に形成されたコンタクト・バイアスの第一グループを有し、上記ピクセル電極は絶縁層に形成された上記第一グループのコンタクト・バイアスを介して対応のTFTソース電極と電気的に接続したものから構成する。
液晶層と、
上記液晶層に隣接したほぼ透明な基板と、
上記基板上に設けたTFTのアレイで、該TFTはアドレス線に接続され、対応のピクセル電極を励起するための切り換え素子として働き、上記TFTのアレイ上に設け、ピクセル電極とアドレス線の間に位置させられたほぼ透明の平坦化層とを有し、
上記平坦化層はBCBを含み、誘電率は約3.0未満である。
ほぼ透明な第一基板を設けるステップと、
TFTのアレイと対応のアドレス線を上記基板上に形成するステップと、
上記TFTアレイと対応のアドレス線の両方の上にフォトイメージ形成型有機絶縁層を設けるステップと、
上記絶縁層内にコンタクト・ホールの第一アレイを形成するために上記絶縁層にフォトイメージ形成するステップと、
上記フォトイメージ形成した絶縁層上の上記第一基板上に電極部材のアレイを形成し、該アレイの電極部材が上記コンタクト・ホールの第一アレイを介して対応のTFTと接続するステップを有する。
CPL = (ε・ε0・A)/d
表1
絶縁層33 オーバラップ 距離「d」 線−ピクセル 誘電率
の材料 距離「w」 キャパシタンス(fF) ε
例1 BCB 1μm 2μm 4.5 2.7
例2 BCB 2μm 2μm 6.9 2.7
例3 BCB 1μm 1μm 6.9 2.7
例4 BCB 2μm 1μm 11.7 2.7
例5 Fuji Clear(商標)1μm 2μm 7.5 4.5
例6 Fuji Clear(商標)2μm 2μm 11.5 4.5
例7 Fuji Clear(商標)1μm 1μm 11.5 4.5
例8 Fuji Clear(商標)2μm 1μm 19.4 4.5
3 ピクセル電極
5 ドレイン・アドレス線
7 ゲート・アドレス線
9 薄膜トランジスタ(TFT)
11 補助記憶コンデンサ
12 記憶コンデンサ電極
13 ドレイン電極
15 ソース電極
17 ゲート電極
19 基板
21 ゲート絶縁層
23 半導体層
25 半導体コンタクト層
29 ドレイン金属層
31 ソース金属層
33 絶縁層
35、36 バイアス
41 背面偏光子
43 背面配向フィルム
45 液晶層
47 全面配向フィルム
49 共通電極
51 前面透明基板
53 前面偏光子
55 ブラックマトリックス
56、57 部位
58 チャネル覆い部分
65 ピクセル開口部
Claims (1)
- A) 第一基板、第二基板と、
B) 上記第一基板と第二基板間に挟まれた液晶層と、
C) 上記第一基板上に設けられ、複数のゲートアドレス線及びドレインアドレス線を接続させた薄膜トランジスタ(TFT)のアレイと、
D) 上記第一基板上に設けられかつ実質的に透明なピクセル電極のアレイであって、該ピクセル電極のアレイ中の複数の該ピクセル電極がゲートアドレス線及びドレインアドレス線の少なくとも1つと重なるピクセル電極のアレイと、
E) 上記TFTのソース電極と重複する領域及び隣接する領域において、上記ゲートアドレス線及びドレインアドレス線の少なくとも1つと上記ピクセル電極との間の上記第一基板上に設けたフォトイメージ形成型絶縁層であって、
前記絶縁層の厚さは、前記重複領域で約1.5μmから2.5μmであり、前記液晶ディスプレイは少なくとも約65%のピクセル口径比と約40から500μmのピクセル間隔を有することを特徴とする液晶ディスプレイ。
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JP2005231574A Expired - Lifetime JP4117891B2 (ja) | 1995-06-06 | 2005-08-10 | 液晶ディスプレイ |
JP2007243409A Expired - Lifetime JP4850157B2 (ja) | 1995-06-06 | 2007-09-20 | 液晶ディスプレイ |
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JP2003326693A Pending JP2004094263A (ja) | 1995-06-06 | 2003-09-18 | 液晶ディスプレイ |
JP2005231574A Expired - Lifetime JP4117891B2 (ja) | 1995-06-06 | 2005-08-10 | 液晶ディスプレイ |
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