FR2855325B1 - Structure de cellule eeprom ayant une epaisseur de dielectrique de canal non uniforme et procede de fabrication - Google Patents
Structure de cellule eeprom ayant une epaisseur de dielectrique de canal non uniforme et procede de fabricationInfo
- Publication number
- FR2855325B1 FR2855325B1 FR0405487A FR0405487A FR2855325B1 FR 2855325 B1 FR2855325 B1 FR 2855325B1 FR 0405487 A FR0405487 A FR 0405487A FR 0405487 A FR0405487 A FR 0405487A FR 2855325 B1 FR2855325 B1 FR 2855325B1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- cell structure
- dielectric thickness
- eeprom cell
- uniform channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030031910 | 2003-05-20 | ||
KR1020030060763A KR20040100813A (ko) | 2003-05-20 | 2003-09-01 | 메모리 게이트 산화막의 두께가 부분적으로 다른 이이피롬소자 및 그 제조방법 |
US10/834,226 US20040232476A1 (en) | 2003-05-20 | 2004-04-29 | EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2855325A1 FR2855325A1 (fr) | 2004-11-26 |
FR2855325B1 true FR2855325B1 (fr) | 2008-12-05 |
Family
ID=33424824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0405487A Expired - Fee Related FR2855325B1 (fr) | 2003-05-20 | 2004-05-19 | Structure de cellule eeprom ayant une epaisseur de dielectrique de canal non uniforme et procede de fabrication |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2005012191A (de) |
KR (1) | KR100604850B1 (de) |
CN (1) | CN100401521C (de) |
DE (1) | DE102004025976B4 (de) |
FR (1) | FR2855325B1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7700993B2 (en) * | 2007-11-05 | 2010-04-20 | International Business Machines Corporation | CMOS EPROM and EEPROM devices and programmable CMOS inverters |
EP2264756B1 (de) * | 2008-03-31 | 2012-08-29 | Fujitsu Semiconductor Limited | Halbleiterbauelement |
CN106972021B (zh) | 2016-01-12 | 2019-12-13 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
CN106206748B (zh) * | 2016-08-29 | 2020-02-07 | 上海华虹宏力半导体制造有限公司 | Sonos器件及其制造方法 |
CN107785274A (zh) * | 2017-11-09 | 2018-03-09 | 上海华力微电子有限公司 | 一种提高闪存编程效率的方法 |
US11641739B2 (en) * | 2020-06-01 | 2023-05-02 | Globalfoundries Singapore Pte. Ltd. | Semiconductor non-volatile memory devices |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH633123A5 (en) * | 1979-08-24 | 1982-11-15 | Centre Electron Horloger | Electrically reprogrammable non-volatile memory element |
JPS5857750A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
JPS58130571A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 半導体装置 |
EP0105802A3 (de) * | 1982-09-30 | 1986-02-26 | Fairchild Semiconductor Corporation | Programmierbarer Nurlesespeicher |
JPS61194877A (ja) * | 1985-02-25 | 1986-08-29 | Nec Corp | 絶縁ゲ−ト型不揮発性半導体メモリ |
JPS61222175A (ja) * | 1985-03-01 | 1986-10-02 | Fujitsu Ltd | 半導体記憶装置の製造方法 |
JPH02277269A (ja) * | 1989-04-19 | 1990-11-13 | Matsushita Electron Corp | 不揮発性メモリ装置の製造方法 |
JPH088314B2 (ja) * | 1989-10-11 | 1996-01-29 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
JP3124334B2 (ja) * | 1991-10-03 | 2001-01-15 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
KR940009644B1 (ko) * | 1991-11-19 | 1994-10-15 | 삼성전자 주식회사 | 불휘발성 반도체메모리장치 및 그 제조방법 |
JPH05275707A (ja) * | 1992-03-30 | 1993-10-22 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
DE19614011C2 (de) * | 1996-04-09 | 2002-06-13 | Infineon Technologies Ag | Halbleiterbauelement, bei dem die Tunnelgateelektrode und die Kanalgateelektrode an der Grenzfläche zum Tunneldielektrikum bzw. Gatedielektrikum durch eine Isolationsstruktur unterbrochen sind |
KR100311971B1 (ko) * | 1998-12-23 | 2001-12-28 | 윤종용 | 비휘발성메모리반도체소자제조방법 |
KR100383703B1 (ko) * | 1999-04-01 | 2003-05-14 | 아사히 가세이 마이크로시스템 가부시끼가이샤 | 반도체 장치의 제조 방법 |
-
2004
- 2004-05-11 KR KR1020040033074A patent/KR100604850B1/ko active IP Right Grant
- 2004-05-18 DE DE102004025976A patent/DE102004025976B4/de not_active Expired - Fee Related
- 2004-05-19 FR FR0405487A patent/FR2855325B1/fr not_active Expired - Fee Related
- 2004-05-20 JP JP2004150136A patent/JP2005012191A/ja active Pending
- 2004-05-20 CN CNB2004100631378A patent/CN100401521C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102004025976B4 (de) | 2011-04-28 |
CN1599071A (zh) | 2005-03-23 |
KR20040100909A (ko) | 2004-12-02 |
JP2005012191A (ja) | 2005-01-13 |
FR2855325A1 (fr) | 2004-11-26 |
KR100604850B1 (ko) | 2006-07-31 |
CN100401521C (zh) | 2008-07-09 |
DE102004025976A1 (de) | 2004-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20100129 |