CN100401521C - 具有非均匀沟道电介质厚度的eeprom单元结构及制造方法 - Google Patents

具有非均匀沟道电介质厚度的eeprom单元结构及制造方法 Download PDF

Info

Publication number
CN100401521C
CN100401521C CNB2004100631378A CN200410063137A CN100401521C CN 100401521 C CN100401521 C CN 100401521C CN B2004100631378 A CNB2004100631378 A CN B2004100631378A CN 200410063137 A CN200410063137 A CN 200410063137A CN 100401521 C CN100401521 C CN 100401521C
Authority
CN
China
Prior art keywords
thickness
tunnel
substrate
channel region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100631378A
Other languages
English (en)
Chinese (zh)
Other versions
CN1599071A (zh
Inventor
姜盛泽
韩晶昱
尹胜范
朴成佑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030060763A external-priority patent/KR20040100813A/ko
Priority claimed from US10/834,226 external-priority patent/US20040232476A1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1599071A publication Critical patent/CN1599071A/zh
Application granted granted Critical
Publication of CN100401521C publication Critical patent/CN100401521C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNB2004100631378A 2003-05-20 2004-05-20 具有非均匀沟道电介质厚度的eeprom单元结构及制造方法 Expired - Fee Related CN100401521C (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR31910/2003 2003-05-20
KR20030031910 2003-05-20
KR31910/03 2003-05-20
KR1020030060763A KR20040100813A (ko) 2003-05-20 2003-09-01 메모리 게이트 산화막의 두께가 부분적으로 다른 이이피롬소자 및 그 제조방법
KR60763/03 2003-09-01
KR60763/2003 2003-09-01
US10/834,226 US20040232476A1 (en) 2003-05-20 2004-04-29 EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same
US10/834,226 2004-04-29

Publications (2)

Publication Number Publication Date
CN1599071A CN1599071A (zh) 2005-03-23
CN100401521C true CN100401521C (zh) 2008-07-09

Family

ID=33424824

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100631378A Expired - Fee Related CN100401521C (zh) 2003-05-20 2004-05-20 具有非均匀沟道电介质厚度的eeprom单元结构及制造方法

Country Status (5)

Country Link
JP (1) JP2005012191A (de)
KR (1) KR100604850B1 (de)
CN (1) CN100401521C (de)
DE (1) DE102004025976B4 (de)
FR (1) FR2855325B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113764426A (zh) * 2020-06-01 2021-12-07 格芯新加坡私人有限公司 半导体非易失性存储器器件

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700993B2 (en) * 2007-11-05 2010-04-20 International Business Machines Corporation CMOS EPROM and EEPROM devices and programmable CMOS inverters
EP2264756B1 (de) * 2008-03-31 2012-08-29 Fujitsu Semiconductor Limited Halbleiterbauelement
CN106972021B (zh) 2016-01-12 2019-12-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法、电子装置
CN106206748B (zh) * 2016-08-29 2020-02-07 上海华虹宏力半导体制造有限公司 Sonos器件及其制造方法
CN107785274A (zh) * 2017-11-09 2018-03-09 上海华力微电子有限公司 一种提高闪存编程效率的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4699690A (en) * 1985-03-01 1987-10-13 Fujitsu Limited Method of producing semiconductor memory device
US4794433A (en) * 1981-10-01 1988-12-27 Kabushiki Kaisha Daini Seikosha Non-volatile semiconductor memory with non-uniform gate insulator
JPH02277269A (ja) * 1989-04-19 1990-11-13 Matsushita Electron Corp 不揮発性メモリ装置の製造方法
US5200636A (en) * 1989-10-11 1993-04-06 Kabushiki Kaisha Toshiba Semiconductor device having E2 PROM and EPROM in one chip
US5326999A (en) * 1991-11-19 1994-07-05 Samsung Electronics, Co., Ltd. Non-volatile semiconductor memory device and manufacturing method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH633123A5 (en) * 1979-08-24 1982-11-15 Centre Electron Horloger Electrically reprogrammable non-volatile memory element
JPS58130571A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 半導体装置
EP0105802A3 (de) * 1982-09-30 1986-02-26 Fairchild Semiconductor Corporation Programmierbarer Nurlesespeicher
JPS61194877A (ja) * 1985-02-25 1986-08-29 Nec Corp 絶縁ゲ−ト型不揮発性半導体メモリ
JP3124334B2 (ja) * 1991-10-03 2001-01-15 株式会社東芝 半導体記憶装置およびその製造方法
JPH05275707A (ja) * 1992-03-30 1993-10-22 Toshiba Corp 不揮発性半導体記憶装置の製造方法
DE19614011C2 (de) * 1996-04-09 2002-06-13 Infineon Technologies Ag Halbleiterbauelement, bei dem die Tunnelgateelektrode und die Kanalgateelektrode an der Grenzfläche zum Tunneldielektrikum bzw. Gatedielektrikum durch eine Isolationsstruktur unterbrochen sind
KR100311971B1 (ko) * 1998-12-23 2001-12-28 윤종용 비휘발성메모리반도체소자제조방법
KR100383703B1 (ko) * 1999-04-01 2003-05-14 아사히 가세이 마이크로시스템 가부시끼가이샤 반도체 장치의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794433A (en) * 1981-10-01 1988-12-27 Kabushiki Kaisha Daini Seikosha Non-volatile semiconductor memory with non-uniform gate insulator
US4699690A (en) * 1985-03-01 1987-10-13 Fujitsu Limited Method of producing semiconductor memory device
JPH02277269A (ja) * 1989-04-19 1990-11-13 Matsushita Electron Corp 不揮発性メモリ装置の製造方法
US5200636A (en) * 1989-10-11 1993-04-06 Kabushiki Kaisha Toshiba Semiconductor device having E2 PROM and EPROM in one chip
US5326999A (en) * 1991-11-19 1994-07-05 Samsung Electronics, Co., Ltd. Non-volatile semiconductor memory device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113764426A (zh) * 2020-06-01 2021-12-07 格芯新加坡私人有限公司 半导体非易失性存储器器件

Also Published As

Publication number Publication date
DE102004025976B4 (de) 2011-04-28
CN1599071A (zh) 2005-03-23
KR20040100909A (ko) 2004-12-02
JP2005012191A (ja) 2005-01-13
FR2855325A1 (fr) 2004-11-26
KR100604850B1 (ko) 2006-07-31
FR2855325B1 (fr) 2008-12-05
DE102004025976A1 (de) 2004-12-16

Similar Documents

Publication Publication Date Title
US4688078A (en) Partially relaxable composite dielectric structure
US7078761B2 (en) Nonvolatile memory solution using single-poly pFlash technology
US8252654B2 (en) Method for manufacturing memory cell
US5907172A (en) Split-gate flash memory cell structure
CN103794609B (zh) 非挥发性内存单元及非挥发性内存矩阵
US8587036B2 (en) Non-volatile memory and fabricating method thereof
US6399466B2 (en) Method of manufacturing non-volatile semiconductor memory device storing charge in gate insulating layer therein
US20090250746A1 (en) NOR-Type Flash Memory Cell Array and Method for Manufacturing the Same
US6005807A (en) Method and apparatus for self-aligned memory cells and array using source side injection
CN100401521C (zh) 具有非均匀沟道电介质厚度的eeprom单元结构及制造方法
US7449384B2 (en) Method of manufacturing flash memory device
US6914826B2 (en) Flash memory structure and operating method thereof
US20170033116A1 (en) Recess channel semiconductor non-volatile memory device and fabricating the same
US6025229A (en) Method of fabricating split-gate source side injection flash memory array
US6329254B1 (en) Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication method
EP0902466A1 (de) Herstellungsverfahren eines nativen MOS-P-Kanal-Transistors mit Verfahren für nichtflüchtige Speicher
US5899718A (en) Method for fabricating flash memory cells
KR100655943B1 (ko) 이중 전압 플래시 집적 회로 제조 방법
CN101005075A (zh) 非挥发性存储器及其制造方法
US20050051835A1 (en) EEPROM device for increasing a coupling ratio and fabrication method thereof
US7118965B2 (en) Methods of fabricating nonvolatile memory device
CN113013169B (zh) Nor flash的形成方法
US7405123B2 (en) Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof
US7408221B2 (en) Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof
US20040232476A1 (en) EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080709