ITMI20041003A1 - Strutture di cella eeprom aventi spessore di dielettrico di canale non uniforme e procedimenti di realizzazione delle medesime - Google Patents
Strutture di cella eeprom aventi spessore di dielettrico di canale non uniforme e procedimenti di realizzazione delle medesimeInfo
- Publication number
- ITMI20041003A1 ITMI20041003A1 IT001003A ITMI20041003A ITMI20041003A1 IT MI20041003 A1 ITMI20041003 A1 IT MI20041003A1 IT 001003 A IT001003 A IT 001003A IT MI20041003 A ITMI20041003 A IT MI20041003A IT MI20041003 A1 ITMI20041003 A1 IT MI20041003A1
- Authority
- IT
- Italy
- Prior art keywords
- implementing
- procedures
- same
- cell structures
- dielectric thickness
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030031910 | 2003-05-20 | ||
KR1020030060763A KR20040100813A (ko) | 2003-05-20 | 2003-09-01 | 메모리 게이트 산화막의 두께가 부분적으로 다른 이이피롬소자 및 그 제조방법 |
US10/834,226 US20040232476A1 (en) | 2003-05-20 | 2004-04-29 | EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20041003A1 true ITMI20041003A1 (it) | 2004-08-19 |
Family
ID=37378147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT001003A ITMI20041003A1 (it) | 2003-05-20 | 2004-05-19 | Strutture di cella eeprom aventi spessore di dielettrico di canale non uniforme e procedimenti di realizzazione delle medesime |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20040100813A (it) |
IT (1) | ITMI20041003A1 (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7579645B2 (en) * | 2004-12-24 | 2009-08-25 | Ricoh Company, Ltd. | Semiconductor device having non-volatile memory cell |
-
2003
- 2003-09-01 KR KR1020030060763A patent/KR20040100813A/ko active Search and Examination
-
2004
- 2004-05-19 IT IT001003A patent/ITMI20041003A1/it unknown
Also Published As
Publication number | Publication date |
---|---|
KR20040100813A (ko) | 2004-12-02 |
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