ES2723750T3 - Método y aparato para refinar un material fundido - Google Patents
Método y aparato para refinar un material fundido Download PDFInfo
- Publication number
- ES2723750T3 ES2723750T3 ES06733126T ES06733126T ES2723750T3 ES 2723750 T3 ES2723750 T3 ES 2723750T3 ES 06733126 T ES06733126 T ES 06733126T ES 06733126 T ES06733126 T ES 06733126T ES 2723750 T3 ES2723750 T3 ES 2723750T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- silicon
- contact
- contact plate
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Un método de refinado y solidificación direccional de silicio para formar un lingote de silicio (29), que comprende las etapas de: formar una masa fundida del silicio en un recipiente (11) que comprende paredes (13) y un fondo (12); poner en contacto una capa de contacto de una placa de contacto de temperatura controlada con la superficie de la masa fundida (18), comprendiendo dicha placa de contacto de temperatura controlada una capa conductora de calor (64) en contacto operativo con medios de refrigeración (65), una capa calentada (61) localizada entre una primera capa intermedia (62) y una segunda capa intermedia (63) debajo de la capa conductora de calor (64) y estando la capa de contacto adherida a la segunda capa intermedia (63), no teniendo contacto dicha placa de contacto de temperatura controlada con las paredes (13) del recipiente, lo que permite que el material fundido solidifique y se adhiera a la placa de contacto; y el silicio fundido solidifique progresivamente hacia abajo para formar el lingote sólido (29) del silicio que se adhiere a la placa de contacto.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20052832A NO326797B1 (no) | 2005-06-10 | 2005-06-10 | Fremgangsmate og apparat for raffinering av smeltet materiale |
PCT/NO2006/000174 WO2006132536A1 (en) | 2005-06-10 | 2006-05-10 | Method and apparatus for refining a molten material |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2723750T3 true ES2723750T3 (es) | 2019-08-30 |
Family
ID=35295069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES06733126T Active ES2723750T3 (es) | 2005-06-10 | 2006-05-10 | Método y aparato para refinar un material fundido |
Country Status (12)
Country | Link |
---|---|
US (2) | US8580036B2 (es) |
EP (1) | EP1922437B1 (es) |
JP (1) | JP5039696B2 (es) |
KR (1) | KR100984926B1 (es) |
CN (2) | CN101194051A (es) |
AU (1) | AU2006255886B2 (es) |
BR (1) | BRPI0611809B1 (es) |
EA (1) | EA011381B1 (es) |
ES (1) | ES2723750T3 (es) |
NO (1) | NO326797B1 (es) |
UA (1) | UA86168C2 (es) |
WO (1) | WO2006132536A1 (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4748187B2 (ja) * | 2007-12-27 | 2011-08-17 | 国立大学法人東北大学 | Si結晶インゴットの製造方法 |
EP2116637A3 (en) * | 2008-05-07 | 2012-03-21 | Covalent Materials Corporation | Crucible for melting silicon and release agent used to the same |
US8545624B2 (en) * | 2008-06-20 | 2013-10-01 | Varian Semiconductor Equipment Associates, Inc. | Method for continuous formation of a purified sheet from a melt |
US8242420B2 (en) * | 2008-08-31 | 2012-08-14 | Inductotherm Corp. | Directional solidification of silicon by electric induction susceptor heating in a controlled environment |
WO2010033885A1 (en) | 2008-09-19 | 2010-03-25 | Memc Electronic Materials, Inc. | Directional solidification furnace for reducing melt contamination and reducing wafer contamination |
US20110176974A1 (en) * | 2008-09-30 | 2011-07-21 | Nikolay Nikolaevich Skaldin | Crystallizer |
DE102008051492A1 (de) * | 2008-10-13 | 2010-04-15 | Pva Tepla Ag | Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen |
NO20092797A1 (no) * | 2009-07-31 | 2011-02-01 | Nordic Ceramics As | Digel |
DE112011103958T5 (de) * | 2010-11-29 | 2013-08-29 | Ulvac, Inc. | Vorrichtungen zum Raffinieren von Silizium und Verfahren zum Raffinieren von Silizium |
CA2819144C (en) * | 2010-12-01 | 2019-06-04 | 1366 Technologies Inc. | Making semiconductor bodies from molten material using a free-standing interposer sheet |
JP2013253298A (ja) * | 2012-06-08 | 2013-12-19 | Ulvac Japan Ltd | ターゲットユニットの製造方法及びターゲットユニットの製造装置 |
TWI532890B (zh) * | 2012-06-25 | 2016-05-11 | 希利柯爾材料股份有限公司 | 矽之控制定向固化 |
FR3010716B1 (fr) * | 2013-09-16 | 2015-10-09 | Commissariat Energie Atomique | Substrat pour la solidification de lingot de silicium |
BR102013032779A2 (pt) * | 2013-12-19 | 2015-12-08 | Cia Ferroligas Minas Gerais Minasligas | processo e equipamento para purificação de silício por solidificação direcional |
CN106591946A (zh) * | 2016-12-20 | 2017-04-26 | 大连理工大学 | 一种逆向离心提高多晶硅定向凝固提纯得率的设备和方法 |
CN106757336A (zh) * | 2016-12-20 | 2017-05-31 | 大连理工大学 | 一种横向提高多晶硅定向凝固提纯得率的设备和方法 |
CN107881555A (zh) * | 2017-10-24 | 2018-04-06 | 佛山市三水兴达涂料有限公司 | 一种半导体材料的加工装置及加工工艺 |
CN109056063A (zh) * | 2018-08-29 | 2018-12-21 | 孟静 | 太阳能电池用多晶硅片的制备方法 |
CN110106546B (zh) * | 2019-05-24 | 2021-04-27 | 浙江大学 | 一种高成品率铸造单晶硅生长方法和热场结构 |
CN110205672B (zh) * | 2019-06-17 | 2021-06-01 | 常州常晶科技有限公司 | 一种类单晶硅晶体生长方法和热场结构 |
CN112807733A (zh) * | 2020-12-29 | 2021-05-18 | 华祥(中国)高纤有限公司 | 一种低熔点聚酯切片的水搅拌结晶设备 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4190630A (en) * | 1978-01-03 | 1980-02-26 | Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv | Apparatus for pulling single crystals from melt |
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
DE3220343A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen polykristalliner siliciumstaebe |
CN1005625B (zh) * | 1985-04-01 | 1989-11-01 | 复旦大学 | 一种定向凝固生长太阳能电池用的多晶硅锭工艺 |
JPH0753569B2 (ja) * | 1986-08-07 | 1995-06-07 | 昭和アルミニウム株式会社 | ケイ素の精製方法 |
GB8718643D0 (en) * | 1987-08-06 | 1987-09-09 | Atomic Energy Authority Uk | Single crystal pulling |
DE19503357A1 (de) * | 1995-02-02 | 1996-08-08 | Wacker Siltronic Halbleitermat | Vorrichtung zur Herstellung eines Einkristalls |
JP3211622B2 (ja) * | 1995-04-25 | 2001-09-25 | 日本軽金属株式会社 | アルミニウムスクラップの精製方法 |
DE69616686T2 (de) * | 1995-08-04 | 2002-08-14 | Sharp K.K., Osaka | Vorrichtung zum Reinigen von Metallen |
JP3992800B2 (ja) * | 1997-09-22 | 2007-10-17 | Sumco Techxiv株式会社 | 単結晶製造装置および単結晶の製造方法 |
JP3531450B2 (ja) * | 1997-12-10 | 2004-05-31 | 日本軽金属株式会社 | アルミニウムの精製方法 |
JP3440802B2 (ja) * | 1998-01-14 | 2003-08-25 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
JP2000001308A (ja) * | 1998-06-15 | 2000-01-07 | Sharp Corp | 多結晶シリコン鋳塊の製造方法及びその製造装置 |
JP3656821B2 (ja) * | 1999-09-14 | 2005-06-08 | シャープ株式会社 | 多結晶シリコンシートの製造装置及び製造方法 |
JP3061057B1 (ja) * | 1999-10-05 | 2000-07-10 | 住友金属工業株式会社 | 石英ルツボ再生方法 |
US6824611B1 (en) * | 1999-10-08 | 2004-11-30 | Cree, Inc. | Method and apparatus for growing silicon carbide crystals |
CN1109778C (zh) * | 2000-08-16 | 2003-05-28 | 浙江大学 | 直拉硅单晶生长的重掺杂方法 |
JP2002308616A (ja) * | 2001-04-06 | 2002-10-23 | Kawasaki Steel Corp | 多結晶シリコンの製造方法 |
DE10124423A1 (de) * | 2001-05-18 | 2003-01-02 | Schott Glas | Züchten von orientierten Einkristallen mit wiederverwendbaren Kristallkeimen |
JP4618944B2 (ja) * | 2001-08-06 | 2011-01-26 | シャープ株式会社 | 結晶シートの製造装置、および結晶シートの製造方法 |
JP2003128411A (ja) * | 2001-10-18 | 2003-05-08 | Sharp Corp | 板状シリコン、板状シリコンの製造方法および太陽電池 |
JP4060106B2 (ja) * | 2002-03-27 | 2008-03-12 | 三菱マテリアル株式会社 | 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材 |
JP4307142B2 (ja) * | 2003-05-01 | 2009-08-05 | シャープ株式会社 | 薄板製造装置および薄板製造方法 |
US7630395B2 (en) * | 2004-05-24 | 2009-12-08 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus and method for providing a data interface to a plurality of radio transceivers |
-
2005
- 2005-06-10 NO NO20052832A patent/NO326797B1/no unknown
-
2006
- 2006-05-10 US US11/916,898 patent/US8580036B2/en active Active
- 2006-05-10 WO PCT/NO2006/000174 patent/WO2006132536A1/en active Application Filing
- 2006-05-10 EA EA200800009A patent/EA011381B1/ru not_active IP Right Cessation
- 2006-05-10 CN CNA2006800207320A patent/CN101194051A/zh active Pending
- 2006-05-10 ES ES06733126T patent/ES2723750T3/es active Active
- 2006-05-10 AU AU2006255886A patent/AU2006255886B2/en active Active
- 2006-05-10 JP JP2008515642A patent/JP5039696B2/ja active Active
- 2006-05-10 CN CN201510342796.3A patent/CN105088330A/zh active Pending
- 2006-05-10 BR BRPI0611809-7A patent/BRPI0611809B1/pt active IP Right Grant
- 2006-05-10 KR KR1020077029880A patent/KR100984926B1/ko active IP Right Grant
- 2006-05-10 EP EP06733126.4A patent/EP1922437B1/en active Active
- 2006-05-10 UA UAA200800332A patent/UA86168C2/uk unknown
-
2009
- 2009-08-12 US US12/540,102 patent/US20100034723A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100984926B1 (ko) | 2010-10-01 |
US8580036B2 (en) | 2013-11-12 |
NO20052832L (no) | 2006-12-11 |
AU2006255886B2 (en) | 2010-03-25 |
UA86168C2 (uk) | 2009-03-25 |
KR20080015457A (ko) | 2008-02-19 |
JP2008543565A (ja) | 2008-12-04 |
CN105088330A (zh) | 2015-11-25 |
EP1922437A4 (en) | 2014-10-29 |
JP5039696B2 (ja) | 2012-10-03 |
EA011381B1 (ru) | 2009-02-27 |
EP1922437A1 (en) | 2008-05-21 |
EP1922437B1 (en) | 2019-02-20 |
US20100034723A1 (en) | 2010-02-11 |
NO326797B1 (no) | 2009-02-16 |
WO2006132536A1 (en) | 2006-12-14 |
NO20052832D0 (no) | 2005-06-10 |
BRPI0611809B1 (pt) | 2020-11-03 |
AU2006255886A1 (en) | 2006-12-14 |
EA200800009A1 (ru) | 2008-04-28 |
US20080196209A1 (en) | 2008-08-21 |
BRPI0611809A2 (pt) | 2008-12-09 |
CN101194051A (zh) | 2008-06-04 |
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