EA200800009A1 - Способ и устройство для очистки расплавленного материала - Google Patents

Способ и устройство для очистки расплавленного материала

Info

Publication number
EA200800009A1
EA200800009A1 EA200800009A EA200800009A EA200800009A1 EA 200800009 A1 EA200800009 A1 EA 200800009A1 EA 200800009 A EA200800009 A EA 200800009A EA 200800009 A EA200800009 A EA 200800009A EA 200800009 A1 EA200800009 A1 EA 200800009A1
Authority
EA
Eurasian Patent Office
Prior art keywords
melted material
cleaning
silicon
cleaning melted
crystallizes
Prior art date
Application number
EA200800009A
Other languages
English (en)
Other versions
EA011381B1 (ru
Inventor
Кеннет Фрьестад
Original Assignee
Элкем Солар Ас
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Элкем Солар Ас filed Critical Элкем Солар Ас
Publication of EA200800009A1 publication Critical patent/EA200800009A1/ru
Publication of EA011381B1 publication Critical patent/EA011381B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Способ осуществления направленной кристаллизации кремния или других материалов. Охлажденную пластинку (19) опускают в расплавленный кремний (18), и слиток (29) из твердого кремния кристаллизуется сверху вниз.
EA200800009A 2005-06-10 2006-05-10 Способ и устройство для очистки расплавленного материала EA011381B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20052832A NO326797B1 (no) 2005-06-10 2005-06-10 Fremgangsmate og apparat for raffinering av smeltet materiale
PCT/NO2006/000174 WO2006132536A1 (en) 2005-06-10 2006-05-10 Method and apparatus for refining a molten material

Publications (2)

Publication Number Publication Date
EA200800009A1 true EA200800009A1 (ru) 2008-04-28
EA011381B1 EA011381B1 (ru) 2009-02-27

Family

ID=35295069

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200800009A EA011381B1 (ru) 2005-06-10 2006-05-10 Способ и устройство для очистки расплавленного материала

Country Status (12)

Country Link
US (2) US8580036B2 (ru)
EP (1) EP1922437B1 (ru)
JP (1) JP5039696B2 (ru)
KR (1) KR100984926B1 (ru)
CN (2) CN101194051A (ru)
AU (1) AU2006255886B2 (ru)
BR (1) BRPI0611809B1 (ru)
EA (1) EA011381B1 (ru)
ES (1) ES2723750T3 (ru)
NO (1) NO326797B1 (ru)
UA (1) UA86168C2 (ru)
WO (1) WO2006132536A1 (ru)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748187B2 (ja) * 2007-12-27 2011-08-17 国立大学法人東北大学 Ｓｉ結晶インゴットの製造方法
EP2116637A3 (en) * 2008-05-07 2012-03-21 Covalent Materials Corporation Crucible for melting silicon and release agent used to the same
US8545624B2 (en) * 2008-06-20 2013-10-01 Varian Semiconductor Equipment Associates, Inc. Method for continuous formation of a purified sheet from a melt
US8242420B2 (en) * 2008-08-31 2012-08-14 Inductotherm Corp. Directional solidification of silicon by electric induction susceptor heating in a controlled environment
WO2010033885A1 (en) 2008-09-19 2010-03-25 Memc Electronic Materials, Inc. Directional solidification furnace for reducing melt contamination and reducing wafer contamination
US20110176974A1 (en) * 2008-09-30 2011-07-21 Nikolay Nikolaevich Skaldin Crystallizer
DE102008051492A1 (de) * 2008-10-13 2010-04-15 Pva Tepla Ag Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen
NO20092797A1 (no) * 2009-07-31 2011-02-01 Nordic Ceramics As Digel
DE112011103958T5 (de) * 2010-11-29 2013-08-29 Ulvac, Inc. Vorrichtungen zum Raffinieren von Silizium und Verfahren zum Raffinieren von Silizium
CA2819144C (en) * 2010-12-01 2019-06-04 1366 Technologies Inc. Making semiconductor bodies from molten material using a free-standing interposer sheet
JP2013253298A (ja) * 2012-06-08 2013-12-19 Ulvac Japan Ltd ターゲットユニットの製造方法及びターゲットユニットの製造装置
TWI532890B (zh) * 2012-06-25 2016-05-11 希利柯爾材料股份有限公司 矽之控制定向固化
FR3010716B1 (fr) * 2013-09-16 2015-10-09 Commissariat Energie Atomique Substrat pour la solidification de lingot de silicium
BR102013032779A2 (pt) * 2013-12-19 2015-12-08 Cia Ferroligas Minas Gerais Minasligas processo e equipamento para purificação de silício por solidificação direcional
CN106591946A (zh) * 2016-12-20 2017-04-26 大连理工大学 一种逆向离心提高多晶硅定向凝固提纯得率的设备和方法
CN106757336A (zh) * 2016-12-20 2017-05-31 大连理工大学 一种横向提高多晶硅定向凝固提纯得率的设备和方法
CN107881555A (zh) * 2017-10-24 2018-04-06 佛山市三水兴达涂料有限公司 一种半导体材料的加工装置及加工工艺
CN109056063A (zh) * 2018-08-29 2018-12-21 孟静 太阳能电池用多晶硅片的制备方法
CN110106546B (zh) * 2019-05-24 2021-04-27 浙江大学 一种高成品率铸造单晶硅生长方法和热场结构
CN110205672B (zh) * 2019-06-17 2021-06-01 常州常晶科技有限公司 一种类单晶硅晶体生长方法和热场结构
CN112807733A (zh) * 2020-12-29 2021-05-18 华祥（中国）高纤有限公司 一种低熔点聚酯切片的水搅拌结晶设备

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
DE3220343A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner siliciumstaebe
CN1005625B (zh) * 1985-04-01 1989-11-01 复旦大学 一种定向凝固生长太阳能电池用的多晶硅锭工艺
JPH0753569B2 (ja) * 1986-08-07 1995-06-07 昭和アルミニウム株式会社 ケイ素の精製方法
GB8718643D0 (en) * 1987-08-06 1987-09-09 Atomic Energy Authority Uk Single crystal pulling
DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls
JP3211622B2 (ja) * 1995-04-25 2001-09-25 日本軽金属株式会社 アルミニウムスクラップの精製方法
DE69616686T2 (de) * 1995-08-04 2002-08-14 Sharp K.K., Osaka Vorrichtung zum Reinigen von Metallen
JP3992800B2 (ja) * 1997-09-22 2007-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置および単結晶の製造方法
JP3531450B2 (ja) * 1997-12-10 2004-05-31 日本軽金属株式会社 アルミニウムの精製方法
JP3440802B2 (ja) * 1998-01-14 2003-08-25 信越半導体株式会社 シリコン単結晶の製造方法
JP2000001308A (ja) * 1998-06-15 2000-01-07 Sharp Corp 多結晶シリコン鋳塊の製造方法及びその製造装置
JP3656821B2 (ja) * 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP3061057B1 (ja) * 1999-10-05 2000-07-10 住友金属工業株式会社 石英ルツボ再生方法
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
CN1109778C (zh) * 2000-08-16 2003-05-28 浙江大学 直拉硅单晶生长的重掺杂方法
JP2002308616A (ja) * 2001-04-06 2002-10-23 Kawasaki Steel Corp 多結晶シリコンの製造方法
DE10124423A1 (de) * 2001-05-18 2003-01-02 Schott Glas Züchten von orientierten Einkristallen mit wiederverwendbaren Kristallkeimen
JP4618944B2 (ja) * 2001-08-06 2011-01-26 シャープ株式会社 結晶シートの製造装置、および結晶シートの製造方法
JP2003128411A (ja) * 2001-10-18 2003-05-08 Sharp Corp 板状シリコン、板状シリコンの製造方法および太陽電池
JP4060106B2 (ja) * 2002-03-27 2008-03-12 三菱マテリアル株式会社 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材
JP4307142B2 (ja) * 2003-05-01 2009-08-05 シャープ株式会社 薄板製造装置および薄板製造方法
US7630395B2 (en) * 2004-05-24 2009-12-08 The United States Of America As Represented By The Secretary Of The Air Force Apparatus and method for providing a data interface to a plurality of radio transceivers

Also Published As

Publication number Publication date
KR100984926B1 (ko) 2010-10-01
US8580036B2 (en) 2013-11-12
NO20052832L (no) 2006-12-11
AU2006255886B2 (en) 2010-03-25
UA86168C2 (ru) 2009-03-25
KR20080015457A (ko) 2008-02-19
JP2008543565A (ja) 2008-12-04
CN105088330A (zh) 2015-11-25
EP1922437A4 (en) 2014-10-29
JP5039696B2 (ja) 2012-10-03
EA011381B1 (ru) 2009-02-27
EP1922437A1 (en) 2008-05-21
EP1922437B1 (en) 2019-02-20
US20100034723A1 (en) 2010-02-11
ES2723750T3 (es) 2019-08-30
NO326797B1 (no) 2009-02-16
WO2006132536A1 (en) 2006-12-14
NO20052832D0 (no) 2005-06-10
BRPI0611809B1 (pt) 2020-11-03
AU2006255886A1 (en) 2006-12-14
US20080196209A1 (en) 2008-08-21
BRPI0611809A2 (pt) 2008-12-09
CN101194051A (zh) 2008-06-04

Similar Documents

Publication Publication Date Title
EA200800009A1 (ru) Способ и устройство для очистки расплавленного материала
DK1899508T3 (da) Digel til krystallisering af silicium og proces til udformning af denne
UA97488C2 (ru) Способ очистки кремнийсодержащего материала низкой чистоты, применение барабанной печи в нем, расплав кремнийсодержащего материала, отходящие газы и твердый поликристаллический кремний, полученные данным способом
NO20055454L (no) Smeltedigel til en innretning for a produsere en blokk av krystallinsk materiale og en fremgangsmate for a produsere denne
FR2882998B1 (fr) Procede pour l'obtention de cristaux de carbonate de sodium
FR2868414B1 (fr) Procede de production d'alpha-alumine particulaire et apha-alumine particulaire produite par ce procede
PE20060878A1 (es) 2-fenil-indoles como antagonistas del receptor de la prostaglandina d2
WO2006082085A3 (de) Verfahren und vorrichtung zum herstellen gerichtet erstarrter blöcke aus halbleitermaterialien
PE20061315A1 (es) Compuestos heteroaromaticos acilaminobiciclicos como antagonistas de cb1
FR2851259B1 (fr) Procede de fabrication de monocristaux hexagonaux et leur utilisation comme substrat pour des composants semi-conducteurs.
WO2007127482A3 (en) Methods for producing consolidated and purified materials
FR2918080B1 (fr) Dispositif et procede d'elaboration de plaquettes en materiau semi-conducteur par moulage et cristallisation dirigee
DK1333026T3 (da) Fremgangsmåde til fremstilling af perindopril med höj renhed og nyttige mellemforbindelser til syntesen
FR2869030B1 (fr) Procede de production d'alpha-alumine particulaire
DE112006004261A5 (de) Gerät zum Verhindern der Kontamination von Siliciumschmelze
DE60010496D1 (de) Czochralskiverfahren zur herstellung silizium-einkristalle durch steuerung der abkühlgeschwindigkeit
DK1520053T3 (da) Fremgangsmåde til fraktioneret krystallisation af et metal
MA29112B1 (fr) Composes d'hydrazide pour lutter contre des parasites animaux
FR2834653B1 (fr) Procede pour la production d'une poudre
FR2935969B1 (fr) Procede d'obtention de cristaux d'adn par cristallisation en milieu visqueux ; cristaux d'adn et les materiaux energetiques en contenant
EP1783098A4 (en) MOLTEN SILICON COOLED BALL AND METHOD OF MANUFACTURING THE SAME
FR2869028B1 (fr) Procede et installation de fabrication de blocs d'un materiau semiconducteur
DK1513833T3 (da) Nye forbindelser af 3-(4-oxo-4H-chromen-2-yl)-(1H)-quinolin-4-on, fremgangsmåde til fremstilling af samme samt farmaceutiske sammensætninger indeholdende samme
FR2887542B1 (fr) Procede d'inertage d'impuretes
FR2845202B1 (fr) Procede de recuit rapide de tranches de materiau semiconducteur.

Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY MD TJ TM

TC4A Change in name of a patent proprietor in a eurasian patent