CN1109778C - 直拉硅单晶生长的重掺杂方法 - Google Patents
直拉硅单晶生长的重掺杂方法 Download PDFInfo
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- CN1109778C CN1109778C CN 00122075 CN00122075A CN1109778C CN 1109778 C CN1109778 C CN 1109778C CN 00122075 CN00122075 CN 00122075 CN 00122075 A CN00122075 A CN 00122075A CN 1109778 C CN1109778 C CN 1109778C
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- Prior art keywords
- doping
- silicon
- growth
- doping device
- heavily
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 12
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002019 doping agent Substances 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 abstract description 4
- 238000004880 explosion Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 235000021050 feed intake Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000722270 Regulus Species 0.000 description 1
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 00122075 CN1109778C (zh) | 2000-08-16 | 2000-08-16 | 直拉硅单晶生长的重掺杂方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 00122075 CN1109778C (zh) | 2000-08-16 | 2000-08-16 | 直拉硅单晶生长的重掺杂方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1337476A CN1337476A (zh) | 2002-02-27 |
CN1109778C true CN1109778C (zh) | 2003-05-28 |
Family
ID=4589073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 00122075 Expired - Fee Related CN1109778C (zh) | 2000-08-16 | 2000-08-16 | 直拉硅单晶生长的重掺杂方法 |
Country Status (1)
Country | Link |
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CN (1) | CN1109778C (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO326797B1 (no) * | 2005-06-10 | 2009-02-16 | Elkem As | Fremgangsmate og apparat for raffinering av smeltet materiale |
SG188933A1 (en) | 2008-12-30 | 2013-04-30 | Memc Singapore Pte Ltd | Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt |
CN101717993B (zh) * | 2009-11-10 | 2011-01-12 | 天津市环欧半导体材料技术有限公司 | 直拉重掺锑单晶的掺杂方法及掺杂装置 |
CN101787566B (zh) * | 2010-03-25 | 2012-04-25 | 杭州海纳半导体有限公司 | 直拉硅单晶的镓元素掺杂方法及所用掺杂装置 |
CN103361732A (zh) * | 2013-07-16 | 2013-10-23 | 江西旭阳雷迪高科技股份有限公司 | 一种n型重掺磷母合金硅棒制备工艺 |
CN105200513A (zh) * | 2015-10-19 | 2015-12-30 | 天津市环欧半导体材料技术有限公司 | 一种可控制电阻率的新型直拉硅单晶掺杂方法 |
CN105887187B (zh) * | 2015-11-24 | 2020-02-14 | 上海超硅半导体有限公司 | 一种硅单晶生长掺杂剂浓度稳定控制方法 |
CN108796603B (zh) * | 2018-08-29 | 2024-04-19 | 内蒙古中环晶体材料有限公司 | 一种直拉单晶补掺合金的工艺方法 |
CN109487333A (zh) * | 2018-12-25 | 2019-03-19 | 徐州鑫晶半导体科技有限公司 | 籽晶、直拉法制备单晶硅的方法和单晶硅 |
CN109457294A (zh) * | 2018-12-27 | 2019-03-12 | 衢州晶哲电子材料有限公司 | 一种直拉重掺锑硅单晶锑源提纯装置及提纯掺杂方法 |
CN112160020B (zh) * | 2020-09-29 | 2022-10-18 | 晶科能源股份有限公司 | 掺杂剂加料器、掺杂半导体材料的制备***及方法 |
CN113481592B (zh) * | 2021-07-07 | 2022-08-30 | 西安奕斯伟硅片技术有限公司 | 一种单晶硅棒的拉制方法 |
CN113463182B (zh) * | 2021-07-07 | 2022-08-23 | 西安奕斯伟硅片技术有限公司 | 一种单晶硅棒的拉制方法 |
CN113584574B (zh) * | 2021-08-02 | 2022-12-02 | 宁夏中欣晶圆半导体科技有限公司 | 固相掺杂方法、装置、重掺砷硅单晶生产***及生产方法 |
CN114351243B (zh) * | 2021-12-07 | 2023-11-07 | 山东有研半导体材料有限公司 | 一种n型掺杂硅单晶的制备方法以及所制备的掺杂硅单晶 |
CN114808112A (zh) * | 2022-03-31 | 2022-07-29 | 上海新昇半导体科技有限公司 | 一种单晶生长方法及晶圆 |
CN115058767B (zh) * | 2022-05-30 | 2024-04-23 | 宁夏中晶半导体材料有限公司 | 一种用于mcz法拉制重掺锑单晶的加掺方法和装置 |
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2000
- 2000-08-16 CN CN 00122075 patent/CN1109778C/zh not_active Expired - Fee Related
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Publication number | Publication date |
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CN1337476A (zh) | 2002-02-27 |
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Owner name: HANGZHOU HAINA SEMICONDUCTOR CO.,LTD. Free format text: FORMER OWNER: ZHEJIANG UNIVERSITY Effective date: 20081114 |
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Effective date of registration: 20081114 Address after: No. 99 Xincheng Road, Hangzhou, Zhejiang, Binjiang District Patentee after: Hangzhou?Haina?Semiconductor?Limited?Company Address before: Hangzhou City, Zhejiang Province ancient jade road 20 Patentee before: Zhejiang University |
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Granted publication date: 20030528 Termination date: 20120816 |