DE112013001934T8 - Verfahren zum Herstellen eines Siliziumcarbid-Substrats - Google Patents

Verfahren zum Herstellen eines Siliziumcarbid-Substrats Download PDF

Info

Publication number
DE112013001934T8
DE112013001934T8 DE112013001934.5T DE112013001934T DE112013001934T8 DE 112013001934 T8 DE112013001934 T8 DE 112013001934T8 DE 112013001934 T DE112013001934 T DE 112013001934T DE 112013001934 T8 DE112013001934 T8 DE 112013001934T8
Authority
DE
Germany
Prior art keywords
producing
silicon carbide
carbide substrate
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112013001934.5T
Other languages
English (en)
Other versions
DE112013001934T5 (de
Inventor
c/o Itami Works of Sumitomo El Fujiwara Shinsuke
c/o Itami Works of Sumitomo Electr Nishiguchi Taro
c/o Itami Works of Sumitomo Ele Hori Tsutomu
c/o Itami Works of Sumitomo Elect Ooi Naoki
c/o Itami Works of Sumitomo El Ueta Shunsaku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112013001934T5 publication Critical patent/DE112013001934T5/de
Application granted granted Critical
Publication of DE112013001934T8 publication Critical patent/DE112013001934T8/de
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112013001934.5T 2012-07-26 2013-06-11 Verfahren zum Herstellen eines Siliziumcarbid-Substrats Expired - Fee Related DE112013001934T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-165995 2012-07-26
JP2012165995A JP5910393B2 (ja) 2012-07-26 2012-07-26 炭化珪素基板の製造方法
PCT/JP2013/066083 WO2014017197A1 (ja) 2012-07-26 2013-06-11 炭化珪素基板の製造方法

Publications (2)

Publication Number Publication Date
DE112013001934T5 DE112013001934T5 (de) 2014-12-24
DE112013001934T8 true DE112013001934T8 (de) 2015-01-08

Family

ID=49997013

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013001934.5T Expired - Fee Related DE112013001934T8 (de) 2012-07-26 2013-06-11 Verfahren zum Herstellen eines Siliziumcarbid-Substrats

Country Status (5)

Country Link
US (2) US9631296B2 (de)
JP (1) JP5910393B2 (de)
CN (1) CN104350187A (de)
DE (1) DE112013001934T8 (de)
WO (1) WO2014017197A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5934633B2 (ja) * 2012-11-16 2016-06-15 東洋炭素株式会社 単結晶ＳｉＣ基板の表面処理方法及び単結晶ＳｉＣ基板の製造方法
JP6238249B2 (ja) * 2013-05-20 2017-11-29 国立研究開発法人産業技術総合研究所 炭化珪素単結晶及びその製造方法
JP6751875B2 (ja) * 2014-11-18 2020-09-09 学校法人関西学院 ＳｉＣ基板の表面処理方法
JP6376027B2 (ja) * 2015-04-08 2018-08-22 住友電気工業株式会社 炭化珪素単結晶の製造装置
JP6675197B2 (ja) * 2015-12-28 2020-04-01 昭和電工株式会社 炭化珪素単結晶の製造装置
JP6722578B2 (ja) * 2016-12-26 2020-07-15 昭和電工株式会社 ＳｉＣウェハの製造方法
JP2019151533A (ja) * 2018-03-06 2019-09-12 太平洋セメント株式会社 炭化ケイ素粉末
JP7209955B2 (ja) 2018-08-30 2023-01-23 国立研究開発法人産業技術総合研究所 ｎ型４Ｈ－ＳｉＣ単結晶基板およびｎ型４Ｈ－ＳｉＣ単結晶基板の製造方法
JP7286970B2 (ja) * 2019-01-10 2023-06-06 株式会社レゾナック ＳｉＣ単結晶成長用坩堝、ＳｉＣ単結晶の製造方法およびＳｉＣ単結晶製造装置
US11987902B2 (en) * 2020-07-27 2024-05-21 Globalwafers Co., Ltd. Manufacturing method of silicon carbide wafer and semiconductor structure

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5211801A (en) * 1989-06-20 1993-05-18 Siemens Aktiengesellschaft Method for manufacturing single-crystal silicon carbide
JP3934695B2 (ja) * 1995-05-31 2007-06-20 株式会社ブリヂストン 炭化ケイ素単結晶製造用高純度炭化ケイ素粉体の製造方法
US5863325A (en) 1995-05-31 1999-01-26 Bridgestone Corporation Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal
DE69712520T2 (de) 1997-01-22 2003-01-09 Yury Alexandrovich Vodakov Züchtung von siliziumkarbid einkristallen
JP3982022B2 (ja) * 1997-09-09 2007-09-26 株式会社デンソー 単結晶の製造方法及び単結晶製造装置
US5964934A (en) * 1997-12-18 1999-10-12 Usg Interiors, Inc. Acoustical tile containing treated perlite
US6406539B1 (en) * 1999-04-28 2002-06-18 Showa Denko K.K, Process for producing silicon carbide single crystal and production apparatus therefor
EP1194618B1 (de) * 1999-07-07 2003-10-08 Siemens Aktiengesellschaft Verfahren zur sublimationszüchtung eines sic-einkristalls mit aufheizen unter züchtungsdruck
US7767021B2 (en) 2005-09-29 2010-08-03 Neosemitech Corporation Growing method of SiC single crystal
JP2007284306A (ja) 2006-04-19 2007-11-01 Nippon Steel Corp 炭化珪素単結晶及びその製造方法
JP2009173501A (ja) * 2008-01-28 2009-08-06 Bridgestone Corp 炭化ケイ素単結晶製造用高純度炭化ケイ素粉体の製造方法及び炭化ケイ素単結晶
JP5117902B2 (ja) 2008-03-25 2013-01-16 株式会社ブリヂストン 炭化珪素単結晶の製造方法
JP2011102204A (ja) 2009-11-10 2011-05-26 Sumitomo Osaka Cement Co Ltd 炭化ケイ素単結晶の製造装置及び製造方法
JP2011168425A (ja) * 2010-02-17 2011-09-01 Bridgestone Corp 炭化珪素原料の製造方法及びそれを用いた炭化珪素単結晶の製造方法
JP5565070B2 (ja) 2010-04-26 2014-08-06 住友電気工業株式会社 炭化珪素結晶および炭化珪素結晶の製造方法
JP5706671B2 (ja) 2010-11-15 2015-04-22 独立行政法人産業技術総合研究所 昇華再結晶法による炭化ケイ素単結晶製造用炭化ケイ素粉体及びその製造方法
JP5636353B2 (ja) * 2011-10-31 2014-12-03 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
JP2013103848A (ja) * 2011-11-11 2013-05-30 Mitsubishi Electric Corp ＳｉＣ単結晶の製造方法

Also Published As

Publication number Publication date
WO2014017197A1 (ja) 2014-01-30
JP5910393B2 (ja) 2016-04-27
JP2014024704A (ja) 2014-02-06
CN104350187A (zh) 2015-02-11
US9631296B2 (en) 2017-04-25
US20170152609A1 (en) 2017-06-01
US20150225873A1 (en) 2015-08-13
DE112013001934T5 (de) 2014-12-24

Similar Documents

Publication Publication Date Title
DE112013001934T8 (de) Verfahren zum Herstellen eines Siliziumcarbid-Substrats
DE112014004638A5 (de) Leuchtstoff, Verfahren zum Herstellen eines Leuchtstoffs und Verwendung eines Leuchtstoffs
DE112013001553A5 (de) Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE112010001116T8 (de) Verfahren zum Herstellen eines SiC-Einkristalls
DE112013000679A5 (de) Verfahren zum Herstellen einer Scheinwerferlinse, Scheinwerferlinse
DE112012001956A5 (de) Befestigungsclip zum Montieren eines Bauteils
DE102011078236A8 (de) Verfahren zum Herstellen eines Scandiumaluminiumnitridfilms
FI20115588A0 (fi) Menetelmä poraussuunnitelman laatimiseksi
DE112012002368A5 (de) Verfahren zum Herstellen eines optoelektronischen Halbleiterbauelements und derartiges Halbleiterbauelement
DE112012005469B8 (de) Verfahren zum Herstellen eines aktiven Verbundmaterials
DE102009028762A8 (de) Verfahren zum Ätzen von Siliziumoberflächen
DE112013000166A5 (de) Verfahren zu Herstellen eines Solarkonzentrators
EP2698807A4 (de) Verfahren zur herstellung eines halbleiterbauelements aus siliciumcarbid
DE102012106663A8 (de) Verfahren zum Herstellen einer lichtemittierenden Halbleitervorrichtung
DE112014002434A5 (de) Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
EP2667414A4 (de) Verfahren zur herstellung eines halbleiterbauelements aus siliciumcarbid
DE112013000980A5 (de) Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat
DE112013005662T8 (de) Verfahren zum Herstellen einer Piezokeramik, Piezokeramik und piezoelektrisches Element
DE112013001133A5 (de) Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes optoelektronisches Bauelement
DE102013103528A8 (de) Verfahren zum Herstellen hochtemperaturbeständiger, schallabsorbierender Materialien für Fahrzeuge
DE112011103858T8 (de) Verfahren zum Herstellen eines Spektroskopiesensors
DE102014119627A8 (de) Verfahren zum Erzeugen eines holografisch-optischen Strahlformungselements
DE112012006658A5 (de) Verfahren zum Entriegeln eines Steckers
DE112013000984A5 (de) Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
DE112011106083T8 (de) Verfahren zum Herstellen eines Halbleiterbauelementes

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee