DE102009028762A8 - Verfahren zum Ätzen von Siliziumoberflächen - Google Patents
Verfahren zum Ätzen von Siliziumoberflächen Download PDFInfo
- Publication number
- DE102009028762A8 DE102009028762A8 DE102009028762A DE102009028762A DE102009028762A8 DE 102009028762 A8 DE102009028762 A8 DE 102009028762A8 DE 102009028762 A DE102009028762 A DE 102009028762A DE 102009028762 A DE102009028762 A DE 102009028762A DE 102009028762 A8 DE102009028762 A8 DE 102009028762A8
- Authority
- DE
- Germany
- Prior art keywords
- etching silicon
- silicon surfaces
- etching
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009028762A DE102009028762A1 (de) | 2009-08-20 | 2009-08-20 | Verfahren zum Ätzen von Siliziumoberflächen |
JP2012525097A JP2013502706A (ja) | 2009-08-20 | 2010-06-02 | シリコン表面のエッチング方法 |
EP10720942.1A EP2467873B1 (de) | 2009-08-20 | 2010-06-02 | Ätzverfahren für silikonflächen |
US13/390,081 US20120208370A1 (en) | 2009-08-20 | 2010-06-02 | Method for etching of silicon surfaces |
CN2010800356641A CN102484060A (zh) | 2009-08-20 | 2010-06-02 | 用于硅表面蚀刻的方法 |
KR1020127003304A KR101404217B1 (ko) | 2009-08-20 | 2010-06-02 | 실리콘 표면 에칭 방법 |
PCT/EP2010/057737 WO2011020632A1 (en) | 2009-08-20 | 2010-06-02 | Method for etching of silicon surfaces |
TW099117944A TW201108321A (en) | 2009-08-20 | 2010-06-03 | Method for etching of silicon surfaces |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009028762A DE102009028762A1 (de) | 2009-08-20 | 2009-08-20 | Verfahren zum Ätzen von Siliziumoberflächen |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102009028762A1 DE102009028762A1 (de) | 2011-03-03 |
DE102009028762A8 true DE102009028762A8 (de) | 2011-06-01 |
Family
ID=43086967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102009028762A Ceased DE102009028762A1 (de) | 2009-08-20 | 2009-08-20 | Verfahren zum Ätzen von Siliziumoberflächen |
Country Status (8)
Country | Link |
---|---|
US (1) | US20120208370A1 (de) |
EP (1) | EP2467873B1 (de) |
JP (1) | JP2013502706A (de) |
KR (1) | KR101404217B1 (de) |
CN (1) | CN102484060A (de) |
DE (1) | DE102009028762A1 (de) |
TW (1) | TW201108321A (de) |
WO (1) | WO2011020632A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120112321A1 (en) * | 2010-11-04 | 2012-05-10 | Solarworld Industries America, Inc. | Alkaline etching liquid for texturing a silicon wafer surface |
TWI419958B (zh) * | 2010-09-10 | 2013-12-21 | Jou Wei Tseng | 矽基材之蝕刻液及蝕刻方法 |
KR20120136882A (ko) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
KR20120136881A (ko) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
WO2013002502A2 (ko) * | 2011-06-28 | 2013-01-03 | 동우화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
CN102719132B (zh) * | 2012-06-07 | 2015-06-24 | 彭朝兵 | 导电聚合物蚀刻油墨及制备方法 |
CN102751384A (zh) * | 2012-07-07 | 2012-10-24 | 蚌埠玻璃工业设计研究院 | 一种晶体硅表面织构方法 |
MY168909A (en) * | 2012-08-10 | 2018-12-04 | Dai Ichi Kogyo Seiyaku Co Ltd | Etching fluid for forming texture and texture-forming method using same |
CN103980905B (zh) * | 2014-05-07 | 2017-04-05 | 佛山市中山大学研究院 | 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用 |
KR102618423B1 (ko) * | 2016-08-19 | 2023-12-27 | 오씨아이 주식회사 | 실리콘 텍스쳐링 조성물 및 이의 제조방법 |
CN108242477B (zh) * | 2016-12-27 | 2020-03-24 | 中国科学院上海高等研究院 | 层转移单晶硅薄膜用籽晶衬底的微接触湿法刻蚀制备方法 |
CN107338480A (zh) * | 2017-08-24 | 2017-11-10 | 嘉兴尚能光伏材料科技有限公司 | 一种单晶硅硅片制绒方法及其制绒添加剂 |
CN113502163B (zh) * | 2021-09-10 | 2021-12-03 | 杭州晶宝新能源科技有限公司 | 用于形成太阳电池背结构的化学助剂、其制备方法及应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005019605A (ja) * | 2003-06-25 | 2005-01-20 | Naoetsu Electronics Co Ltd | テクスチャー形成用エッチング液 |
DE102006022093A1 (de) * | 2006-05-11 | 2007-11-22 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe durch Ätzen |
DE102007026081A1 (de) * | 2007-05-25 | 2008-11-27 | Gebr. Schmid Gmbh & Co. | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19811878C2 (de) | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
US6685757B2 (en) * | 2002-02-21 | 2004-02-03 | Rodel Holdings, Inc. | Polishing composition |
EP1378947A1 (de) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Ätzpaste für Halbleiter und Verwendung einer Ätzpaste zum lokalisierten Ätzen von Halbleitersubstraten |
DE10241300A1 (de) | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
JP4668528B2 (ja) * | 2003-09-05 | 2011-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
TW200714696A (en) * | 2005-08-05 | 2007-04-16 | Advanced Tech Materials | High throughput chemical mechanical polishing composition for metal film planarization |
DE102006051952A1 (de) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
CN102138214B (zh) * | 2008-09-01 | 2014-06-04 | 默克专利股份有限公司 | 借助蚀刻的薄层太阳能电池组件的边缘去除 |
US20120112321A1 (en) * | 2010-11-04 | 2012-05-10 | Solarworld Industries America, Inc. | Alkaline etching liquid for texturing a silicon wafer surface |
US20110244184A1 (en) * | 2010-04-01 | 2011-10-06 | Solarworld Industries America, Inc. | Alkaline etching solution for texturing a silicon wafer surface |
US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
-
2009
- 2009-08-20 DE DE102009028762A patent/DE102009028762A1/de not_active Ceased
-
2010
- 2010-06-02 US US13/390,081 patent/US20120208370A1/en not_active Abandoned
- 2010-06-02 KR KR1020127003304A patent/KR101404217B1/ko active IP Right Grant
- 2010-06-02 EP EP10720942.1A patent/EP2467873B1/de active Active
- 2010-06-02 CN CN2010800356641A patent/CN102484060A/zh active Pending
- 2010-06-02 JP JP2012525097A patent/JP2013502706A/ja not_active Ceased
- 2010-06-02 WO PCT/EP2010/057737 patent/WO2011020632A1/en active Application Filing
- 2010-06-03 TW TW099117944A patent/TW201108321A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005019605A (ja) * | 2003-06-25 | 2005-01-20 | Naoetsu Electronics Co Ltd | テクスチャー形成用エッチング液 |
DE102006022093A1 (de) * | 2006-05-11 | 2007-11-22 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe durch Ätzen |
DE102007026081A1 (de) * | 2007-05-25 | 2008-11-27 | Gebr. Schmid Gmbh & Co. | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
Non-Patent Citations (2)
Title |
---|
Computerübersetzung der Ansprüche und der Beschreibung & JP 2005019605 A * |
JP 2005-019605 AA und Computerübersetzung der Ansprüche und der Beschreibung |
Also Published As
Publication number | Publication date |
---|---|
CN102484060A (zh) | 2012-05-30 |
WO2011020632A1 (en) | 2011-02-24 |
US20120208370A1 (en) | 2012-08-16 |
EP2467873B1 (de) | 2014-01-15 |
JP2013502706A (ja) | 2013-01-24 |
KR20120041750A (ko) | 2012-05-02 |
DE102009028762A1 (de) | 2011-03-03 |
KR101404217B1 (ko) | 2014-06-05 |
EP2467873A1 (de) | 2012-06-27 |
TW201108321A (en) | 2011-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8196 | Reprint of faulty title page (publication) german patentblatt: part 1a6 | ||
OP8 | Request for examination as to paragraph 44 patent law | ||
R082 | Change of representative | ||
R002 | Refusal decision in examination/registration proceedings | ||
R003 | Refusal decision now final | ||
R003 | Refusal decision now final |
Effective date: 20150127 |