DE112011106083T8 - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents

Verfahren zum Herstellen eines Halbleiterbauelementes Download PDF

Info

Publication number
DE112011106083T8
DE112011106083T8 DE112011106083.1T DE112011106083T DE112011106083T8 DE 112011106083 T8 DE112011106083 T8 DE 112011106083T8 DE 112011106083 T DE112011106083 T DE 112011106083T DE 112011106083 T8 DE112011106083 T8 DE 112011106083T8
Authority
DE
Germany
Prior art keywords
producing
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112011106083.1T
Other languages
English (en)
Other versions
DE112011106083T5 (de
Inventor
Oleg Kononchuk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of DE112011106083T5 publication Critical patent/DE112011106083T5/de
Application granted granted Critical
Publication of DE112011106083T8 publication Critical patent/DE112011106083T8/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE112011106083.1T 2010-12-27 2011-12-15 Verfahren zum Herstellen eines Halbleiterbauelementes Active DE112011106083T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1005133A FR2969815B1 (fr) 2010-12-27 2010-12-27 Procédé de fabrication d'un dispositif semi-conducteur
FR10/05133 2010-12-27
PCT/EP2011/006350 WO2012089315A1 (en) 2010-12-27 2011-12-15 A method for fabricating a semiconductor device

Publications (2)

Publication Number Publication Date
DE112011106083T5 DE112011106083T5 (de) 2014-12-31
DE112011106083T8 true DE112011106083T8 (de) 2015-03-26

Family

ID=45463528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112011106083.1T Active DE112011106083T8 (de) 2010-12-27 2011-12-15 Verfahren zum Herstellen eines Halbleiterbauelementes

Country Status (9)

Country Link
US (1) US20140370695A1 (de)
JP (1) JP6064232B2 (de)
KR (2) KR20180091955A (de)
CN (2) CN104025268A (de)
DE (1) DE112011106083T8 (de)
FR (1) FR2969815B1 (de)
SG (1) SG11201403121YA (de)
TW (1) TWI584380B (de)
WO (1) WO2012089315A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014049616A (ja) * 2012-08-31 2014-03-17 Sony Corp ダイオードおよびダイオードの製造方法
CN103280502B (zh) * 2013-05-23 2016-12-28 安徽三安光电有限公司 发光器件及其制作方法
US20170275779A1 (en) * 2015-10-07 2017-09-28 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
FR3060837B1 (fr) * 2016-12-15 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif comprenant une couche de materiau iii-n avec des defauts de surface
CN113445131A (zh) * 2021-06-28 2021-09-28 中国科学院上海光学精密机械研究所 抑制来自氮化镓籽晶缺陷的方法及氮化镓单晶和应用

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806771A (en) * 1969-05-05 1974-04-23 Gen Electric Smoothly beveled semiconductor device with thick glass passivant
US4062038A (en) * 1976-01-28 1977-12-06 International Business Machines Corporation Radiation responsive device
US4320168A (en) * 1976-12-16 1982-03-16 Solarex Corporation Method of forming semicrystalline silicon article and product produced thereby
NL191525C (nl) * 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4431858A (en) * 1982-05-12 1984-02-14 University Of Florida Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
JPH10120496A (ja) * 1996-10-17 1998-05-12 Denso Corp 炭化珪素基板の欠陥除去方法
JP3594826B2 (ja) * 1999-02-09 2004-12-02 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP4556300B2 (ja) * 2000-07-18 2010-10-06 ソニー株式会社 結晶成長方法
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
US6784074B2 (en) * 2001-05-09 2004-08-31 Nsc-Nanosemiconductor Gmbh Defect-free semiconductor templates for epitaxial growth and method of making same
JP3690326B2 (ja) * 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
EP1306890A2 (de) * 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Halbleitersubstrat und -bauelement aus SiC und Verfahren zu deren Herstellung
JP3801091B2 (ja) * 2002-05-09 2006-07-26 富士電機デバイステクノロジー株式会社 炭化珪素半導体装置およびその製造方法
TW587346B (en) * 2003-03-28 2004-05-11 United Epitaxy Co Ltd Optoelectronic device made by semiconductor compound
US20070145386A1 (en) * 2004-12-08 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
KR100624449B1 (ko) * 2004-12-08 2006-09-18 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
KR100657941B1 (ko) * 2004-12-31 2006-12-14 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
JP4432827B2 (ja) * 2005-04-26 2010-03-17 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
JP2007243080A (ja) * 2006-03-13 2007-09-20 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7459380B2 (en) * 2006-05-05 2008-12-02 Applied Materials, Inc. Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
WO2008141324A2 (en) * 2007-05-14 2008-11-20 S.O.I.Tec Silicon On Insulator Technologies Methods for improving the quality of epitaxially-grown semiconductor materials
GB0806556D0 (en) * 2008-04-11 2008-05-14 Isis Innovation Silicon wafers
TWI401729B (zh) * 2008-10-16 2013-07-11 Advanced Optoelectronic Tech 阻斷半導體差排缺陷之方法
US8247314B2 (en) * 2008-11-14 2012-08-21 Soitec Methods for improving the quality of structures comprising semiconductor materials
KR20100093872A (ko) * 2009-02-17 2010-08-26 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
US8178427B2 (en) * 2009-03-31 2012-05-15 Commissariat A. L'energie Atomique Epitaxial methods for reducing surface dislocation density in semiconductor materials
US8232568B2 (en) * 2009-08-21 2012-07-31 Bridgelux, Inc. High brightness LED utilizing a roughened active layer and conformal cladding
JP2011134815A (ja) * 2009-12-23 2011-07-07 Denso Corp ショットキーダイオードと製造方法と製造装置
CN101771088A (zh) * 2010-01-21 2010-07-07 复旦大学 Pn结和肖特基结混合式二极管及其制备方法
US20110221039A1 (en) * 2010-03-12 2011-09-15 Sinmat, Inc. Defect capping for reduced defect density epitaxial articles
US9142631B2 (en) * 2010-03-17 2015-09-22 Cree, Inc. Multilayer diffusion barriers for wide bandgap Schottky barrier devices
US8450190B2 (en) * 2010-03-23 2013-05-28 Academia Sinica Fabrication of GaN substrate by defect selective passivation
KR101051561B1 (ko) * 2010-04-14 2011-07-22 삼성전기주식회사 질화물계 반도체 소자 및 그 제조 방법
US9287452B2 (en) * 2010-08-09 2016-03-15 Micron Technology, Inc. Solid state lighting devices with dielectric insulation and methods of manufacturing
FR2969813B1 (fr) * 2010-12-27 2013-11-08 Soitec Silicon On Insulator Procédé de fabrication d'un dispositif semi-conducteur
US8409892B2 (en) * 2011-04-14 2013-04-02 Opto Tech Corporation Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates
KR101881064B1 (ko) * 2012-03-05 2018-07-24 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
TWI436424B (zh) * 2012-04-03 2014-05-01 Univ Nat Taiwan 半導體元件及其製造方法

Also Published As

Publication number Publication date
CN110189996A (zh) 2019-08-30
WO2012089315A1 (en) 2012-07-05
TWI584380B (zh) 2017-05-21
FR2969815A1 (fr) 2012-06-29
KR20180091955A (ko) 2018-08-16
JP6064232B2 (ja) 2017-01-25
TW201234491A (en) 2012-08-16
CN104025268A (zh) 2014-09-03
JP2015500572A (ja) 2015-01-05
DE112011106083T5 (de) 2014-12-31
SG11201403121YA (en) 2014-10-30
US20140370695A1 (en) 2014-12-18
KR20140098769A (ko) 2014-08-08
FR2969815B1 (fr) 2013-11-22

Similar Documents

Publication Publication Date Title
DE112013001553A5 (de) Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102011078236A8 (de) Verfahren zum Herstellen eines Scandiumaluminiumnitridfilms
DE112012002368A5 (de) Verfahren zum Herstellen eines optoelektronischen Halbleiterbauelements und derartiges Halbleiterbauelement
DE112012001956A5 (de) Befestigungsclip zum Montieren eines Bauteils
DE112010001116T8 (de) Verfahren zum Herstellen eines SiC-Einkristalls
DE112012005469B8 (de) Verfahren zum Herstellen eines aktiven Verbundmaterials
DE112013001934T8 (de) Verfahren zum Herstellen eines Siliziumcarbid-Substrats
AT507485A3 (de) Verfahren zum betreiben eines hybridfahrzeuges
DE112013000166A5 (de) Verfahren zu Herstellen eines Solarkonzentrators
AT508065A3 (de) Verfahren zum betreiben eines elektrofahrzeuges
DE102012106663A8 (de) Verfahren zum Herstellen einer lichtemittierenden Halbleitervorrichtung
DE102013103979A8 (de) Verfahren zum Steuern eines Gangs eines Roboters
DE112014002434A5 (de) Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
DE102010061253A8 (de) Verfahren zum Herstellen eines Gehäuses einer numerischen Anzeige
DE102011075300A8 (de) Verfahren zur Herstellung eines Kolbens
DE112013001133A5 (de) Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes optoelektronisches Bauelement
DE112011103858T8 (de) Verfahren zum Herstellen eines Spektroskopiesensors
DE112011102832A5 (de) Verfahren zum Ansteuern eines einphasigen BLDC Kleinmotors
DE112011106083T8 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE112013000984A5 (de) Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
DE112012004797A5 (de) Verfahren zum Verschließen eines Sammelkastens
DE112012006658A5 (de) Verfahren zum Entriegeln eines Steckers
DE112013003797A5 (de) Verfahren zum Betreiben eines Antriebstrangs
DE102010053734A8 (de) Vorrichtung zum Ausbilden eines Lagers
DE112013001380A5 (de) Verfahren zum Herstellen einer Laschenkette

Legal Events

Date Code Title Description
R409 Internal rectification of the legal status completed
R409 Internal rectification of the legal status completed
R012 Request for examination validly filed
R016 Response to examination communication