DE112010001116T8 - Verfahren zum Herstellen eines SiC-Einkristalls - Google Patents

Verfahren zum Herstellen eines SiC-Einkristalls Download PDF

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Publication number
DE112010001116T8
DE112010001116T8 DE112010001116T DE112010001116T DE112010001116T8 DE 112010001116 T8 DE112010001116 T8 DE 112010001116T8 DE 112010001116 T DE112010001116 T DE 112010001116T DE 112010001116 T DE112010001116 T DE 112010001116T DE 112010001116 T8 DE112010001116 T8 DE 112010001116T8
Authority
DE
Germany
Prior art keywords
producing
single crystal
sic single
sic
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112010001116T
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English (en)
Other versions
DE112010001116B4 (de
DE112010001116T5 (de
Inventor
Hironori Daikoku
Yasuyuki Fujiwara
Hidemitsu Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of DE112010001116T5 publication Critical patent/DE112010001116T5/de
Publication of DE112010001116T8 publication Critical patent/DE112010001116T8/de
Application granted granted Critical
Publication of DE112010001116B4 publication Critical patent/DE112010001116B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112010001116.8T 2009-03-12 2010-03-11 Verfahren zum Herstellen eines SiC-Einkristalls Expired - Fee Related DE112010001116B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-059987 2009-03-12
JP2009059987A JP4780209B2 (ja) 2009-03-12 2009-03-12 ＳｉＣ単結晶の製造方法
PCT/IB2010/000515 WO2010103387A1 (en) 2009-03-12 2010-03-11 Method of producing sic single crystal

Publications (3)

Publication Number Publication Date
DE112010001116T5 DE112010001116T5 (de) 2012-09-27
DE112010001116T8 true DE112010001116T8 (de) 2012-12-13
DE112010001116B4 DE112010001116B4 (de) 2015-02-26

Family

ID=42153678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010001116.8T Expired - Fee Related DE112010001116B4 (de) 2009-03-12 2010-03-11 Verfahren zum Herstellen eines SiC-Einkristalls

Country Status (5)

Country Link
US (1) US9080254B2 (de)
JP (1) JP4780209B2 (de)
CN (1) CN102264955B (de)
DE (1) DE112010001116B4 (de)
WO (1) WO2010103387A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012090946A1 (ja) * 2010-12-27 2012-07-05 住友金属工業株式会社 ＳｉＣ単結晶の製造装置及びＳｉＣ単結晶の製造方法
JP2012193055A (ja) * 2011-03-15 2012-10-11 Toyota Motor Corp ＳｉＣ単結晶製造方法およびそれに用いる装置
JP5850490B2 (ja) * 2011-09-08 2016-02-03 国立研究開発法人産業技術総合研究所 ＳｉＣ単結晶の製造方法
JP5850489B2 (ja) * 2011-09-08 2016-02-03 国立研究開発法人産業技術総合研究所 ＳｉＣ単結晶の製造方法
JP5318300B1 (ja) 2011-10-28 2013-10-16 京セラ株式会社 結晶の製造方法
CN103930601B (zh) * 2011-10-31 2016-11-02 丰田自动车株式会社 SiC单晶的制造方法
JP6046405B2 (ja) * 2012-07-19 2016-12-14 トヨタ自動車株式会社 ＳｉＣ単結晶のインゴット、その製造装置及びその製造方法
KR101657018B1 (ko) 2012-07-19 2016-09-12 신닛테츠스미킨 카부시키카이샤 SiC 단결정의 제조 장치 및 SiC 단결정의 제조 방법
JP5975482B2 (ja) * 2012-08-26 2016-08-23 国立大学法人名古屋大学 ＳｉＣ単結晶の製造方法
EP2889397B1 (de) * 2012-08-26 2019-04-03 National University Corporation Nagoya University Verfahren zur herstellung von sic-einkristallen
CN104662213B (zh) * 2012-09-04 2017-09-01 新日铁住金株式会社 SiC单晶的制造装置以及制造方法
CN104662211B (zh) * 2012-09-04 2017-04-05 新日铁住金株式会社 单晶的制造装置、用于该制造装置的坩埚以及单晶的制造方法
US9896778B2 (en) 2013-05-31 2018-02-20 Toyota Jidosha Kabushiki Kaisha Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus
JP5905864B2 (ja) * 2013-09-27 2016-04-20 トヨタ自動車株式会社 ＳｉＣ単結晶及びその製造方法
JP5890377B2 (ja) * 2013-11-21 2016-03-22 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP6259740B2 (ja) * 2014-09-11 2018-01-10 国立大学法人名古屋大学 炭化ケイ素の結晶の製造方法及び結晶製造装置
JP6390628B2 (ja) * 2016-01-12 2018-09-19 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法及び製造装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4100228B2 (ja) * 2002-04-15 2008-06-11 住友金属工業株式会社 炭化珪素単結晶とその製造方法
JP4389574B2 (ja) 2003-12-16 2009-12-24 住友金属工業株式会社 ＳｉＣ単結晶の製造方法および製造装置
JP4466293B2 (ja) * 2004-09-03 2010-05-26 住友金属工業株式会社 炭化珪素単結晶の製造方法
JP4475091B2 (ja) 2004-10-19 2010-06-09 住友金属工業株式会社 炭化珪素単結晶の製造方法
WO2006025420A1 (ja) * 2004-09-03 2006-03-09 Sumitomo Metal Industries, Ltd. 炭化珪素単結晶の製造方法
WO2006117441A1 (fr) 2005-04-28 2006-11-09 Patrick Rivollet Plateforme support de communication
JP2007284301A (ja) 2006-04-18 2007-11-01 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP2008100854A (ja) 2006-10-17 2008-05-01 Toyota Motor Corp ＳｉＣ単結晶の製造装置および製造方法
JP2008100890A (ja) 2006-10-20 2008-05-01 Sumitomo Metal Ind Ltd ＳｉＣ単結晶の製造方法

Also Published As

Publication number Publication date
JP2010208926A (ja) 2010-09-24
US9080254B2 (en) 2015-07-14
US20110315073A1 (en) 2011-12-29
CN102264955B (zh) 2014-01-01
JP4780209B2 (ja) 2011-09-28
WO2010103387A1 (en) 2010-09-16
CN102264955A (zh) 2011-11-30
DE112010001116B4 (de) 2015-02-26
DE112010001116T5 (de) 2012-09-27

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R082 Change of representative

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Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE

R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R084 Declaration of willingness to licence
R082 Change of representative

Representative=s name: WINTER, BRANDL - PARTNERSCHAFT MBB, PATENTANWA, DE

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee