DE102004025976B4 - EEPROM-Zellenstruktur mit ungleichmäßiger Kanaldielektrikumdicke und Herstellungsverfahren - Google Patents

EEPROM-Zellenstruktur mit ungleichmäßiger Kanaldielektrikumdicke und Herstellungsverfahren Download PDF

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Publication number: DE102004025976B4
Authority: DE; Germany
Prior art keywords: gate dielectric; region; dielectric layer; tunnel; cell structure
Prior art date: 2003-05-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE102004025976A

Other languages

German (de)

English (en)

Other versions

DE102004025976A1 (de

Inventor

Sung-Taeg Kang

Jeong-uk Suwon Han

Seung-beom Suwon Yoon

Sung-Woo Park

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-05-20

Filing date

2004-05-18

Publication date

2011-04-28

2003-09-01 Priority claimed from KR1020030060763A external-priority patent/KR20040100813A/ko

2004-04-29 Priority claimed from US10/834,226 external-priority patent/US20040232476A1/en

2004-05-18 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

2004-12-16 Publication of DE102004025976A1 publication Critical patent/DE102004025976A1/de

2011-04-28 Application granted granted Critical

2011-04-28 Publication of DE102004025976B4 publication Critical patent/DE102004025976B4/de

2024-05-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title claims description 11
239000000758 substrate Substances 0.000 claims abstract description 23
238000007667 floating Methods 0.000 claims abstract description 20
230000015654 memory Effects 0.000 claims abstract description 15
239000004065 semiconductor Substances 0.000 claims abstract description 15
238000000034 method Methods 0.000 claims description 12
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
229920005591 polysilicon Polymers 0.000 claims description 10
230000007704 transition Effects 0.000 claims description 10
239000003989 dielectric material Substances 0.000 claims description 7
239000000463 material Substances 0.000 claims description 4
239000002019 doping agent Substances 0.000 description 11
239000003990 capacitor Substances 0.000 description 6
238000005468 ion implantation Methods 0.000 description 6
125000006850 spacer group Chemical group 0.000 description 5
229910052785 arsenic Inorganic materials 0.000 description 4
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
230000007423 decrease Effects 0.000 description 4
239000012535 impurity Substances 0.000 description 4
230000003247 decreasing effect Effects 0.000 description 3
230000000694 effects Effects 0.000 description 3
230000009467 reduction Effects 0.000 description 3
238000006467 substitution reaction Methods 0.000 description 3
230000005641 tunneling Effects 0.000 description 3
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
125000001475 halogen functional group Chemical group 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
230000008901 benefit Effects 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
230000008859 change Effects 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000011161 development Methods 0.000 description 1
230000018109 developmental process Effects 0.000 description 1
238000007599 discharging Methods 0.000 description 1
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238000002360 preparation method Methods 0.000 description 1
230000002265 prevention Effects 0.000 description 1
230000008569 process Effects 0.000 description 1
230000000717 retained effect Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Non-Volatile Memory (AREA)
Semiconductor Memories (AREA)

DE102004025976A 2003-05-20 2004-05-18 EEPROM-Zellenstruktur mit ungleichmäßiger Kanaldielektrikumdicke und Herstellungsverfahren Expired - Fee Related DE102004025976B4 (de)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
KR20030031910		2003-05-20
KR03/31910		2003-05-20
KR1020030060763A KR20040100813A (ko)	2003-05-20	2003-09-01	메모리 게이트 산화막의 두께가 부분적으로 다른 이이피롬소자 및 그 제조방법
KR03/60763		2003-09-01
US10/834,226 US20040232476A1 (en)	2003-05-20	2004-04-29	EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same
US10/834226		2004-04-29

Publications (2)

Publication Number	Publication Date
DE102004025976A1 DE102004025976A1 (de)	2004-12-16
DE102004025976B4 true DE102004025976B4 (de)	2011-04-28

Family

ID=33424824

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE102004025976A Expired - Fee Related DE102004025976B4 (de)	2003-05-20	2004-05-18	EEPROM-Zellenstruktur mit ungleichmäßiger Kanaldielektrikumdicke und Herstellungsverfahren

Country Status (5)

Country	Link
JP (1)	JP2005012191A (ko)
KR (1)	KR100604850B1 (ko)
CN (1)	CN100401521C (ko)
DE (1)	DE102004025976B4 (ko)
FR (1)	FR2855325B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7700993B2 (en) *	2007-11-05	2010-04-20	International Business Machines Corporation	CMOS EPROM and EEPROM devices and programmable CMOS inverters
KR101383618B1 (ko) *	2008-03-31	2014-04-10	후지쯔 세미컨덕터 가부시키가이샤	반도체 장치
CN106972021B (zh) *	2016-01-12	2019-12-13	中芯国际集成电路制造(上海)有限公司	一种半导体器件及其制作方法、电子装置
CN106206748B (zh) *	2016-08-29	2020-02-07	上海华虹宏力半导体制造有限公司	Sonos器件及其制造方法
CN107785274A (zh) *	2017-11-09	2018-03-09	上海华力微电子有限公司	一种提高闪存编程效率的方法
US11641739B2 (en) *	2020-06-01	2023-05-02	Globalfoundries Singapore Pte. Ltd.	Semiconductor non-volatile memory devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6177702B1 (en) *	1996-04-09	2001-01-23	Infineon Technologies Ag	Semiconductor component with a split floating gate and tunnel region
DE19951930C2 (de) *	1998-12-23	2002-07-11	Samsung Electronics Co Ltd	Elektrisch löschbare, programmierbare Festwertspeicher mit Abtast- und Auswahl-Transistorgateelektrode und Verfahren zu ihrer Herstellung
US6472259B1 (en) *	1999-04-01	2002-10-29	Asahi Kasei Microsystems Co., Ltd.	Method of manufacturing semiconductor device

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Publication number	Priority date	Publication date	Assignee	Title
CH633123A5 (en) *	1979-08-24	1982-11-15	Centre Electron Horloger	Electrically reprogrammable non-volatile memory element
JPS5857750A (ja) *	1981-10-01	1983-04-06	Seiko Instr & Electronics Ltd	不揮発性半導体メモリ
JPS58130571A (ja) *	1982-01-29	1983-08-04	Hitachi Ltd	半導体装置
CA1204862A (en) *	1982-09-30	1986-05-20	Ning Hsieh	Programmable read only memory
JPS61194877A (ja) *	1985-02-25	1986-08-29	Nec Corp	絶縁ゲ−ト型不揮発性半導体メモリ
JPS61222175A (ja) *	1985-03-01	1986-10-02	Fujitsu Ltd	半導体記憶装置の製造方法
JPH02277269A (ja) *	1989-04-19	1990-11-13	Matsushita Electron Corp	不揮発性メモリ装置の製造方法
JPH088314B2 (ja) *	1989-10-11	1996-01-29	株式会社東芝	不揮発性半導体記憶装置およびその製造方法
JP3124334B2 (ja) *	1991-10-03	2001-01-15	株式会社東芝	半導体記憶装置およびその製造方法
KR940009644B1 (ko) *	1991-11-19	1994-10-15	삼성전자 주식회사	불휘발성 반도체메모리장치 및 그 제조방법
JPH05275707A (ja) *	1992-03-30	1993-10-22	Toshiba Corp	不揮発性半導体記憶装置の製造方法

2004
- 2004-05-11 KR KR1020040033074A patent/KR100604850B1/ko active IP Right Grant
- 2004-05-18 DE DE102004025976A patent/DE102004025976B4/de not_active Expired - Fee Related
- 2004-05-19 FR FR0405487A patent/FR2855325B1/fr not_active Expired - Fee Related
- 2004-05-20 JP JP2004150136A patent/JP2005012191A/ja active Pending
- 2004-05-20 CN CNB2004100631378A patent/CN100401521C/zh not_active Expired - Fee Related

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6177702B1 (en) *	1996-04-09	2001-01-23	Infineon Technologies Ag	Semiconductor component with a split floating gate and tunnel region
DE19951930C2 (de) *	1998-12-23	2002-07-11	Samsung Electronics Co Ltd	Elektrisch löschbare, programmierbare Festwertspeicher mit Abtast- und Auswahl-Transistorgateelektrode und Verfahren zu ihrer Herstellung
US6472259B1 (en) *	1999-04-01	2002-10-29	Asahi Kasei Microsystems Co., Ltd.	Method of manufacturing semiconductor device

Also Published As

Publication number	Publication date
CN100401521C (zh)	2008-07-09
KR100604850B1 (ko)	2006-07-31
JP2005012191A (ja)	2005-01-13
KR20040100909A (ko)	2004-12-02
CN1599071A (zh)	2005-03-23
FR2855325A1 (fr)	2004-11-26
FR2855325B1 (fr)	2008-12-05
DE102004025976A1 (de)	2004-12-16

Legal Events

Date	Code	Title	Description
2004-12-16	OP8	Request for examination as to paragraph 44 patent law
2011-11-03	R020	Patent grant now final	Effective date: 20110729
2014-12-02	R119	Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
2015-02-26	R119	Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee	Effective date: 20141202

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DE4114344C2 (de)	1996-02-29	Herstellungsverfahren und Aufbau einer nicht-flüchtigen Halbleiterspeichereinrichtung mit einer Speicherzellenanordnung und einem peripheren Schaltkreis
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DE102004025976B4 (de)	2011-04-28	EEPROM-Zellenstruktur mit ungleichmäßiger Kanaldielektrikumdicke und Herstellungsverfahren
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DE19807010A1 (de)	1999-01-14	Verfahren zur Herstellung einer nichtflüchtigen Speichereinrichtung