CN110148378A - 通过数据线测量像素 - Google Patents
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Abstract
一种用于确定像素电路和有机发光二极管(OLED)电流的***和方法。像素电路通过数据线连接到源极驱动器。源极驱动器提供给像素电路电压(或电流)。像素和OLED的电流可以通过读出电路来测量。可以从测量电流中提取一个电压值,并将其提供给处理器进行进一步处理。
Description
背景技术
与液晶显示屏(LCD)相比,有机发光二极管(OLED)显示屏由于响应速度更快、视角更大、对比度更高、重量更轻、功耗更低以及对柔性基板的适应性,近年来在显示应用中受到了极大的关注。
OLED显示屏可以由一系列发光设备组成,每个发光设备由各个电路(即像素电路)控制,其中具有晶体管,用于有选择地控制电路,并使用显示信息进行编程并根据显示信息来发光。在基板上制造的薄膜晶体管(“TFT”)可以集成到此类显示屏中。随着显示屏的老化,TFT往往会在显示面板之间表现出不均匀的行为。补偿技术可应用于此类显示屏,以实现显示屏的图像一致性,并随着显示屏的老化克服其退化现象。一些方案为显示屏提供补偿,以考虑整个显示面板的变化,并随着时间的推移利用监控***来测量与像素电路的老化(即退化)相关的时间相关参数。随后测量信息可用于像素电路的后续编程,以确保对编程进行的调整能克服任何测量到的退化。但是,现有受监视像素电路需要使用额外的反馈线和晶体管来选择性地将像素电路与监测***连接,并提供读出信息。加入额外的反馈线和晶体管可能会不受欢迎地显著增加成本率,并降低面板上允许的像素密度。
发明内容
本公开的各个方面包括通过数据线确定连接到源极驱动器的像素电路的电流的方法。该方法包括通过数据线从源极向像素电路提供电压(或电流),测量电流,并从电流测量中提取电压值。像素电路可包括发光器件,如有机发光二极管(OLED),也可包括薄膜场效应管(TFT)。
本公开在此方面进一步包括具有读出电路的源极驱动器,该电路用于测量源极驱动器提供给像素电路的电流。电流被转换为数字代码,即10到16位数字代码。数字代码被提供给数字处理器以进行进一步处理。
鉴于参考附图对各种实施例和/或方面的详细描述,本发明的前述和其他方面和实施例对于本领域普通技术人员将是显而易见的,附图的简要描述见下。
附图说明
图1是本发明实施例的OLED显示屏框图。
图2是图1中OLED显示屏在编程模式下的像素驱动电路实施例的框图。
图3是图1中OLED显示屏在测量模式下的像素驱动电路实施例的框图。
图4是图1中OLED显示屏在正常运行模式下的像素驱动电路实施例的框图。
图5是图1中OLED显示屏在并非由使能管理信号选择的编程模式下的像素驱动电路实施例的框图。
图6是本发明实施例的OLED显示屏框图。
图7是像素电路实施例的框图,其中包括两个TFT:T1和T2、一个OLED和一个电容。
图8是编程模式下像素列电路(第j列)的实施例框图。
图9是像素列电路(第j列)的实施例框图。在此模式下,数据线的电压与电源电压(VDD)相同,所有电容器的电压都设为零,OLED器件显示黑色。
图10是测量模式下像素列电路(第j列)的实施例框图。在这种模式下测量泄漏电流。
图11是编程模式下像素列电路(第j列)的实施例框图。在此模式下,将对第i行进行编程。
图12是测量模式下像素列电路(第j列)的实施例框图。在此模式下测量第i个像素的像素电流加上其他像素的泄漏电流。
图13是测量模式下像素列电路(第j列)的实施例框图。在此模式下测量第i个像素的OLED电流加上其他像素的泄漏电流。
具体实施方式
图1是范例显示***10的示意图。显示***10包括一个栅极驱动器12、一个源极驱动器14、一个数字控制器16、一个内存存储18和显示面板20。显示面板20包括一个以行和列排列的像素22阵列。每个像素22都是可单独编程的,可以发出亮度值单独可编程的光。控制器16接收数字数据,该数据说明要显示在显示面板20上的信息。控制器16向源极驱动器14发送信号32,并向栅极驱动器12发送调度信号34,以驱动显示面板20中的像素22显示指定的信息。与显示面板20关联的多个像素22由此构成了一个显示阵列(“显示屏幕”),适合于根据控制器16接收到的输入数字数据动态显示信息。例如,显示屏幕可以显示控制器16接收的视频数据流中的视频信息。电源电压24可以提供恒定的电源电压,也可以是由控制器116发出的信号控制的可调节电压源。显示***10还可以包含电流源或汇(未显示)的功能,向显示面板20中的像素22提供偏置电流,从而减少像素22的编程时间。
为了说明起见,图1中的显示***10在显示面板20中仅用4个像素22来描述。众所周知,显示***10可以通过包含类似像素阵列(如像素22)的显示屏幕来实现,并且显示屏幕不限于特定数量的像素行和列。例如,显示***10可以通过有若干像素行和列的显示屏幕实现,此类显示屏幕常见于移动设备、监视器设备和/或投影设备上。
像素22由驱动电路(“像素电路”)操作,该电路通常包括驱动晶体管和发光器件。后文中像素22可能指像素电路。发光器件可以选择是有机发光二极管,但本公开的实现适用于具有其他电致发光器件(包括电流驱动发光器件)的像素电路。像素22中的驱动晶体管可以选择n型或p型非晶硅薄膜晶体管,但目前公开的实现并不限于具有特定极性晶体管的像素电路,也不限于有薄膜晶体管的像素电路。像素电路22还可以包括一个存储电容器,用于存储编程信息,并允许像素电路22在被寻址后驱动发光器件。因此,显示面板20可以是一个有源显示阵列。
如图1所示,显示面板20所示的左上角像素22连接到电源使能(PE)信号线40、测量(MEAS)信号线42、电源线26i、数据线23j和使能测量(EM)信号线44i。电源线26i可以用VDD供电。
显示面板20中的左上角像素22可以对应显示面板20中第i行、第j列的像素。同样,显示面板20中右上角的像素22代表第j行、第m列;左下角像素22代表第n行、第j列;右下角像素22代表第n行、第m列。每个像素22都连接到PE信号线40、MEAS信号线42;以及适当的电源线(例如电源线26i和26n)、数据线(例如数据线23j和23m)和EM信号线(例如EM信号线44i和44n)。应注意本公开的某些方面适用于具有更多连接的像素,例如连接到选择线。
对于显示面板20所示的左上角像素22,PE信号线40和MEAS信号线42由栅极驱动器12提供,可用于如通过激活开关或晶体管来允许数据线23j对像素22编程,使能像素22的编程操作。数据线23j将编程信息从源极驱动器14传输到像素22。例如,数据线23j可用于对像素22施加编程电压或编程电流,以便对像素22进行编程来发出所需的亮度。源极驱动器14通过数据线23j供应编程电压(或编程电流)是一个适当的电压(或电流),可使像素22根据控制器16收到的数字数据发出所需亮度。在像素22的编程操作过程中,可对像素22施加编程电压(或编程电流),以便为像素22中的存储设备(如存储电容器)充电,从而使像素22能够在编程操作后的发光操作中发出所需的亮度。例如,像素22中的存储设备可在编程操作过程中充电,以便在发光操作期间对驱动晶体管的一个或多个栅极或源极端子施加电压,从而让驱动晶体管根据存储器件上存储的电压,通过发光器件传输驱动电流。
通常,在像素22中,驱动晶体管在像素22的发光操作过程中通过发光器件传输的驱动电流是由电源线26i提供的电流。电源线26i可以提供正电源电压(例如,电路设计中通常称为“VDD”的电压)。
显示***10还包括与源极驱动器14集成的读出电路15。再次考虑显示面板20中的左上角像素22,数据线23j将像素22连接到读出电路15。数据线23j允许读出电路15测量与像素22相关的电流,并在此提取指示像素22退化的信息。读出电路15将相关电流转换为相应的电压。该电压被转换为10到16位数字代码,并发送到数字控制16进行进一步处理或补偿。
图2是一个简单的独立驱动电路50的电路图,其中包含像素22、源极驱动器14和三个开关,由MEAS 66、EM 68和PE 64信号控制。图2中的像素22包括与连接到驱动晶体管T1和存储电容器Cs的有机发光器件D1,电容用于存储编程信息并允许像素电路22在被寻址后驱动发光器件。在图2中,电路50处于编程模式。
如上文所述,图1中显示面板20中的每个像素22都是由图2中驱动电路50中展示的方法驱动的。驱动电路50包括驱动器晶体管T1,连接到有机发光器件D1、存储编程信息的存储电容器Cs,以及由MEAS 66、EM 68和PE 64信号控制的源极驱动器14和三个开关。在本例中,有机发光器件D1是由电流激活的发光有机材料,其亮度是电流大小的函数。电源电压输入54连接到驱动晶体管T1的漏极。电源电压输入54与驱动晶体管T1一起为发光器件D1提供电流。电流可以通过图1中的源极驱动器14控制。在一个例子中,驱动晶体管T1是由氢化非晶硅制成的薄膜晶体管。在另一个例子中,还可以使用低温多晶硅薄膜晶体管(“LTPS-TFT”)技术。其他电路元件,如电容器和晶体管(未显示)可添加到简单的驱动电路50中,以允许像素配合各种使能、选择和控制信号运行,如图1中的栅极驱动器12输入的信号。这些元件可用于更快地编程像素,在不同的帧和其他功能中保持像素的编程。
当像素22在应用中需要确定亮度时,驱动晶体管T1的栅极会被充电到一个电压,使晶体管T1产生相应的电流流经有机发光器件(OLED)D1,产生所需的亮度。晶体管T1的栅极电压可以通过用电压直接对节点充电产生,也可以用外部电流进行自调整。
在编程模式下,像素22的行是逐行选择的。例如,像素22的第i行由栅极驱动器12选择和使能,其中EM信号线44i设置为零,即EM=0。第i行中的所有像素22都连接到源极驱动器14,因此第i行的MEAS信号线42设置为零,即MEAS=0,PE信号线40设置为同VDD,即PE=VDD。数据被转换为数据电流,称为I_DATA 56并流入像素。此数据电流56在T1晶体管上产生Vgs电压,存储在Cs电容器中。当像素处于工作模式并连接到VDD时,存储在Cs电容器中的电压会在T1晶体管上产生与I_DATA 56相等的电流。
图3是测量模式下,图2所示的简单单个驱动电路50的电路图。在测量模式下,像素22的每一行均被逐行选择,并由栅极驱动器11使能,即EM=0,且所有像素22均连接到源极驱动器14,即MEAS=0,PE=VDD,如图2所示。像素电流I_Pixel 70流入源极驱动器14,并由读出电路(ROC)15测量。ROC 15测量像素电流70,并将其转换为对应电压。该电压被转换为10到16位数字代码,并发送到数字处理器以进行进一步处理或补偿。
图4是正常工作模式下,图2所示的简单单个驱动电路50的电路图。在对所有行进行编程后,可以进入正常运行模式。在正常运行模式下,所有像素22都连接到其特定的电源线,例如,第i行连接到电源线26i,而所有像素都与源极驱动器14断开连接,因此第i行的MEAS信号线42设置为VDD,即MEAS=VDD,PE信号线40设置为等于零,即PE=0。像素电流I_Pixel 70等于数据电流,I_Data 56流入像素22,OLED D1有对应于像素电流70的亮度。
图5是编程模式下,但针对另一行进行编程时,图2所示的简单单个驱动电路50的电路图。在编程模式下,编程是逐行执行的。结果是只有一行像素22,即第i行,连接到了源极驱动器14,而像素22的其余行,即第j行,均被关闭,没有像素电流70。在此期间,第i行的EM信号线44j设置为VDD,即EM=VDD,而MEAS信号线42设置为零,即MEAS=0,PE信号线40设置为等于VDD,即PE=VDD。在此期间,只有泄漏电流流入OLED D1和像素22,如图5所示。
图6是范例显示***100的示意图。显示***100包括一个栅极驱动器112、一个源极驱动器114、一个数字控制器116、一个内存存储118、显示面板120以及两个TFT晶体管119作为每个列的开关。显示面板120包括一个以行和列排列的像素122阵列。每个像素122都是可单独编程的,可以发出亮度值单独可编程的光。控制器116接收数字数据,该数据说明要显示在显示面板120上的信息。控制器116向源极驱动器114发送信号132,并向栅极驱动器112发送调度信号134,以驱动显示面板120中的像素122显示指定的信息。与显示面板120关联的多个像素122由此构成了一个显示阵列(“显示屏幕”),适合于根据控制器116接收到的输入数字数据动态显示信息。例如,显示屏幕可以显示控制器116接收的视频数据流中的视频信息。电源电压124可以提供恒定的电源电压,也可以是由控制器116发出的信号控制的可调节电压源。
为了说明起见,图6中的显示***100在显示面板120中仅用4个像素122来描述。众所周知,显示***100可以通过包含类似像素阵列(如像素122)的显示屏幕来实现,并且显示屏幕不限于特定数量的像素行和列。例如,显示***100可以通过有若干像素行和列的显示屏幕实现,此类显示屏幕常见于移动设备、监视器设备和/或投影设备上。
像素122由驱动电路(“像素电路”)操作,该电路通常包括驱动晶体管和发光器件。后文中像素122可能指像素电路。发光器件可以选择是有机发光二极管(OLED),但本公开的实现适用于具有其他电致发光器件(包括电流驱动发光器件)的像素电路。像素122中的驱动晶体管可以选择n型或p型非晶硅薄膜晶体管,但目前公开的实现并不限于具有特定极性晶体管的像素电路,也不限于有薄膜晶体管的像素电路。像素电路122还可以包括一个存储电容器,用于存储编程信息,并允许像素电路122在寻址后驱动发光器件。因此,显示面板120可以是一个有源显示阵列。
如图6所示,显示面板120所示的左上角像素122连接到电源使能(PE)信号线140、测量(MEAS)信号线142、电源线126j、数据线123j和写入(WR)信号线144i。电源线126j可以用VDD供电。
显示面板120中的左上角像素122可以对应显示面板120中第i行、第j列的像素。同样,显示面板120中右上角的像素122代表第i行、第m列;左下角像素122代表第n行、第j列;右下角像素122代表第n行、第m列。每个像素列连接到两个TFT 119。一个TFT119连接到数据线(123j和123m)和像素电源电压线(121j和121m)之间,并由PE信号线140控制。第二个TFT连接到像素电源电压线(121j和121m)和电源电压线(126j和126m)之间,由MEAS信号线142控制;显示面板120还连接到适当的电源线(例如电源线126j和126m)、数据线(例如数据线123j和123m)和写入WR信号线(例如WR信号线144i和144n)。应注意本公开的某些方面适用于具有更多连接的像素,例如连接到选择线或监视线。
对于显示面板120所示的左上角像素122,PE信号线140、MEAS信号线142和WR(144i和144n)由栅极驱动器112提供,可用于如通过激活TFT晶体管119和像素22中的其他开关或晶体管来允许数据线123j对像素122编程,从而使能像素122的编程操作。数据线123j将编程信息从源极驱动器114传输到像素122。例如,数据线123j可用于对像素122施加编程电压或编程电流,以便对像素122进行编程来发出所需的亮度。源极驱动器114通过数据线123j供应编程电压(或编程电流)是一个适当的电压(或电流),可使像素122根据控制器116收到的数字数据发出所需亮度。在像素122的编程操作过程中,可对像素122施加编程电压(或编程电流),以便为像素122中的存储设备(如存储电容器)充电,从而使像素122能够在编程操作后的发光操作中发出所需的亮度。例如,像素122中的存储设备可在编程操作过程中充电,以便在发光操作期间对驱动晶体管的一个或多个栅极或源极端子施加电压,从而让驱动晶体管根据存储器件上存储的电压,通过发光器件传输驱动电流。
通常,在像素122中,驱动晶体管在像素122的发光操作过程中通过发光器件传输的驱动电流是由电源线126j提供的电流。电源线126j可提供正电源电压(例如,电路设计中通常称为“VDD”的电压)。
显示***100还包括与源极驱动器114集成的读出电路115。再次考虑显示面板120中的左上角像素122,数据线123j将像素122连接到读出电路115。数据线123j允许读出电路115测量与像素122相关的电流,并在此提取指示像素122退化的信息。读出电路115将相关电流转换为相应的电压。该电压被转换为10到16位数字代码,并发送到数字控制116进行进一步处理或补偿。
图7是一个简单的单个驱动电路200的电路图,其中包含一个像素122,它连接到电源电压VDD 154,数据电压VDATA 156,并由写入WR信号158控制。图2中的像素122包括开关晶体管T2、连接到有机发光器件(OLED)D1、开关晶体管T2和存储电容器Cs的驱动晶体管T1,电容用于存储编程信息并允许像素电路122在被寻址后驱动发光器件。在图7中,当写入WR信号158变低时,它会使能晶体管T2,VDATA 156会存储在电容器Cs上。存储在电容器Cs上的驱动晶体管T1的Vgs(栅源)电压为:
Vgs=VDATA-VDD
如上文所述,图6中显示面板120中的每个像素122都是由图7中驱动电路200中展示的方法驱动的。驱动电路200包括开关晶体管T2和驱动晶体管T1,连接到有机发光器件(OLED)D1和一个用于存储编程信息的存储电容器CS。VDATA 156电压来自源极驱动器114,存储在电容器Cs上。开关晶体管T2由WR 58信号控制。在本例中,有机发光器件(OLED)D1是由电流激活的发光有机材料,其亮度是电流大小的函数。电源电压输入154连接到驱动晶体管T1的源极(或漏极)。电源电压输入154与驱动晶体管T1一起为发光器件D1提供电流。电流可以通过图6中的源驱动器114进行控制,并可由下列公式确定:
其中k取决于驱动晶体管T1的大小,Vth是驱动晶体管T1的阈值电压。在一个例子中,驱动晶体管T1是由氢化非晶硅制成的薄膜晶体管。在另一个例子中,还可以使用低温多晶硅薄膜晶体管(“LTPS-TFT”)技术。其他电路元件,如电容器和晶体管(未显示)可添加到简单的驱动电路200中,以允许像素配合各种使能、选择和控制信号运行,如图6中的栅极驱动器112输入的信号。这些元件可用于更快地编程像素,在不同的帧和其他功能中保持像素的编程。
当像素122在应用中需要确定亮度时,驱动晶体管T1的栅极会被充电到一个电压,使晶体管T1产生相应的电流流经有机发光器件(OLED)D1,产生所需的亮度。晶体管T1的栅极电压可以通过用电压直接对节点充电产生,也可以用外部电流进行自调整。
在编程模式下,像素122的行是逐行选择的。例如,像素122的第i行由栅极驱动器112选择和使能,其中WR信号线144i设置为零,即WR=0。第i行中的所有像素122都连接到源极驱动器114,因此第i行的MEAS信号线142设置为VDD,即MEAS=VDD,PE信号线40设置为0,即PE=0。数据VDATA(123j和123m)作为电压(或可能是电流)存储在像素122中电容器CS中。此数据在T1晶体管上产生Vgs电压,存储在Cs电容器中。当像素处于工作模式并连接到VDD时,存储在Cs电容器中的电压会在T1晶体管上产生电流,等于:
像素电流IPixel流入像素122,OLED D1的亮度与像素电流相对应。
图8是编程模式下像素列电路(第j列)300的实施例框图。在此模式下,电路300的每一行都是逐行选择的,并由栅极驱动器112使能,其中WR信号线144i设置为零,即WR=0,所有像素122均连接到源极驱动器114和电源电压VDD。MEAS信号线142设置为VDD,即MEAS=VDD,PE信号线140设置为等于0,即PE=0,如图8所示。在第一个写入模式301下,写入信号WR[1]设置为零,即WR[1]=0,第1行连接到源极驱动器114,数据VDATA[j]123j存储在第1行、第j列的像素的电容器Cs中。在第二个写入模式302下,写入信号WR[2]设置为零,即WR[2]=0,第2行连接到源极驱动器114,数据VDATA[j]123j存储在第2行、第j列的像素的电容器Cs中。在第三种写入模式303下,写入信号WR[i](i=3至n-1)逐个设置为零,即WR[i]=0(i=3至n-1),行i(i=3至n-1)与源极驱动器114逐一连接,数据VDATA[j]123j存储在第i行、第j列的像素的电容器Cs中。在第四种写入模式304下,写入信号WR[n]设置为零,即WR[n]=0,行n连接到源极驱动器114,数据VDATA[j]123j存储在第n行、第j列的像素的电容器Cs中。
为了测量像素电流,在第一步中,所有数据线VDATA(123j和123m)都设置为与电源电压(VDD)相同的电压,所有写入信号WR(144i和144n)都设置为零,即WR[i]=0(i=1至n),然后像素122内的所有电容器电压为零,OLED器件D1显示黑色。第二步,测量泄漏电流。第三步,数据对第i行编程。最后,选择第i行并测量像素电流。
图9是编程模式下像素列电路(第j列)400的实施例框图。第一步,数据线VDATA123j的电压与电源电压VDD 126j相同。所有写入信号WR(144i、144n)设置为零,即WR=0,MEAS信号线142设置为VDD,即MEAS=VDD,PE信号线140设置为等于0,即PE=0,如图9所述。电路400中的所有像素122都处于写入模式401。所有电容器的电压都设置为零,OLED器件D1显示黑色。或者,所有像素都可以按顺序逐个设为黑色,类似于视频进入面板的驱动方式。
图10是测量模式下像素列电路(第j列)500的实施例框图。第二步,设置电路500中所有像素的电容器电压为零后,立即测量泄漏电流。WR信号线(144i和144n)设置为VDD,即WR=VDD,MEAS信号线142设置为0,即MEAS=0,PE信号线140设置为等于VDD,即PE=VDD,如图10所示。电路500与电源电压断开,并连接到数据线VDATA 123j。第j列像素122(电路500)中的泄漏电流ILeakage 190流入源极驱动器114,并由读出电路(ROC)115测量。ROC 115测量泄漏电流(ILeakage)190,并将其转换为对应电压。该电压被转换为10到16位数字代码,并发送到数字处理器以进行进一步处理或补偿。
第三步是将数据写入希望测量其电流的像素。图11是编程模式下像素列电路(第j列)600的实施例框图。在此模式下,将对第i行进行编程。WR信号线144i设置为零,即WR[i]=0,其他WR信号线144n设置为等于VDD,即WR[n]=VDD,MEAS信号线142设置为等于VDD,即MEAS=VDD,PE信号线140设置为零,即PE=0,如图11所述。第i行中的像素122被编程为VDATA 123j,与之对应的电流流入像素。除了泄漏电流外,没有电流流入第j列中的其他像素122。
最后一步是测量第i行的像素电流。图12是测量模式下像素列电路(第j列)700的实施例框图。在此模式下测量第i个像素的像素电流加上其他像素的泄漏电流。WR信号线(144i和144n)设置为VDD,即WR=VDD,MEAS信号线142设置为0,即MEAS=0,PE信号线140设置为等于VDD,即PE=VDD,如图12所示。电路700与电源电压断开,并连接到数据线VDATA123j。第i行的像素电流加上第j列(电路700)中其他像素的泄漏电流,IPixel+ILeakage 192流入源极驱动器114,并由ROC 115测量。ROC 115测量电流192,并将其转换为对应电压。该电压转换为10到16位数字代码。最后一步测量的电流与第二步中的泄漏电流之间的差异,即是第j列电路700中第i行像素的像素电流,有以下公式:
IPixel=(在步骤4中测量的电流)-(在步骤2中测量的电流)
IPixel=(IPixel+ILeakage)-(ILeakage)
为了测量OLED电流,在这里重复测量像素电流的所有四个步骤。在如图9所示的第一步中,数据线设置为等于VDD,像素内的电容器电压设置为零。在如图10所示的第二步中,测量了像素的泄漏电流ILeakage 190。在图11所示的第三步中,选择了第i行,并以最低电压推算出了数据线VDATA 123j。它导致第i个像素122内的T1晶体管被推入线性区,其行为就像一个开关。如图8所示的第四步中,第i个像素122的OLED D1通过第i个像素122内的T1晶体管连接到积分器810的虚拟地806,晶体管119连接到像素电源电压节点121j、数据线123j以及ROC 115中的开关807。忽略开关上的电压降,第i个像素122的OLED D1将具有与偏置电压VB 805相同的电压。第i行像素的OLED电流加上第j列(电路800)中其他像素的泄漏电流,IOLED+ILeakage 194流入源极驱动器115,并由ROC 115测量。ROC 115测量电流194,并将其转换为对应电压。该电压被转换为10到16位数字代码802。第四步测量的电流与第二步中的泄漏电流之间的差异,即是第j列电路800中第i行像素的OLED电流,有以下公式:
IOled=(在步骤4中测量的电流)-(在步骤2中测量的电流)
IOled=(IOled+ILeakage)-(ILeakage)
如图13所示,ROC 115包括一个开关807、一个积分器810和一个模拟数字转换器(ADC)801。该积分器包括复位开关808、积分电容Ci和偏置电压VB 805。积分器会对来自像素122的电流积分,并将其转换为相应的电压。ADC 801将电压转换为10到16位数字代码802。
虽然本文说明和描述了本发明的特定实施例和应用,但应理解为本发明并不限于本文所述的精确结构和构造,且依据上述描述显见各种修改、变更和变种,而不会偏离所附权利要求定义的发明精神和范围。
Claims (8)
1.一种通过数据线确定连接到源极驱动器的像素电路的电流的方法,所述方法包括
通过数据线从源极向像素电路提供电压,
测量电流,并
从电流测量中提取电压值。
2.如权利要求1所述的方法,其特征在于所述像素电路被定义为具有发光器件,所述方法被进一步定义为:
通过驱动晶体管向发光器件提供电流,该晶体管由数据线对源极编程,
测量电流,并
从电流测量中提取电压值。
3.如权利要求2所述的方法,其特征在于所述发光器件被定义为有机发光二极管。
4.如权利要求1所述的方法,其特征在于所述像素电路被定义为具有薄膜场效应管(TFT),所述方法被进一步定义为:
通过数据线从源极向TFT供电,
测量电流,并
从电流测量中提取电压值。
5.一种通过数据线确定连接到读出电路内积分器的虚拟地上的像素电路中OLED的电流的方法,所述方法包括
通过数据线从源极向像素电路提供电压(或电流),
测量发光器件的电流,以及
从电流测量中提取电压值。
6.如权利要求1所述的方法,其特征在于源极驱动器被进一步定义为具有读出电路,所述方法被进一步定义为通过读出电路测量电流。
7.如权利要求6所述的方法,其特征在于所述方法还包括:
将测量电流转换为数字代码;并将数字代码发送到数字处理器进行处理。
8.如权利要求7所述的方法,其特征在于所述方法被进一步定义为:
将测量电流转换为10到16位数字代码。
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US20230008299A1 (en) | 2023-01-12 |
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US11847976B2 (en) | 2023-12-19 |
US11488541B2 (en) | 2022-11-01 |
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