WO2009004988A1 - ナノろ過によるレジスト剥離液連続使用システム - Google Patents

ナノろ過によるレジスト剥離液連続使用システム Download PDF

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Publication number
WO2009004988A1
WO2009004988A1 PCT/JP2008/061694 JP2008061694W WO2009004988A1 WO 2009004988 A1 WO2009004988 A1 WO 2009004988A1 JP 2008061694 W JP2008061694 W JP 2008061694W WO 2009004988 A1 WO2009004988 A1 WO 2009004988A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist
stripper liquid
stripping
stripper
liquid
Prior art date
Application number
PCT/JP2008/061694
Other languages
English (en)
French (fr)
Inventor
Masanoo Sumita
Hideo Hayashi
Original Assignee
Toagosei Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toagosei Co., Ltd. filed Critical Toagosei Co., Ltd.
Priority to US12/667,300 priority Critical patent/US20110036506A1/en
Priority to JP2009521600A priority patent/JPWO2009004988A1/ja
Priority to CN200880020488A priority patent/CN101689480A/zh
Publication of WO2009004988A1 publication Critical patent/WO2009004988A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D61/00—Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis or ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
    • B01D61/02—Reverse osmosis; Hyperfiltration ; Nanofiltration
    • B01D61/027—Nanofiltration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3092—Recovery of material; Waste processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Water Supply & Treatment (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)

Abstract

　【課題】 本発明が解決しようとする課題は、剥離液の交換をせずに長時間剥離を続けても、レジスト剥離に用いる剥離液中のレジスト成分の濃度を一定の濃度範囲内に収めるシステムを実現することである。 【解決手段】 剥離液によってポジ型レジストの剥離を行う時に、剥離液中に溶解したレジスト成分を特定のセラミックフィルタ−（５）によってクロスフロ−ろ過を行うことによって減少させることができることを見出した。そして剥離工程で生成したレジスト成分を含む剥離液をろ過工程で処理することによって、副生するレジスト成分濃度が濃縮された濃縮剥離液を適宜系外に抜き出し、レジスト成分が除去された処理剥離液に新液の剥離液を適宜加えた剥離液を再度剥離工程で使用するレジスト剥離システムを完成した。
PCT/JP2008/061694 2007-07-03 2008-06-27 ナノろ過によるレジスト剥離液連続使用システム WO2009004988A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/667,300 US20110036506A1 (en) 2007-07-03 2008-06-27 System for continuously using resist stripper liquid based on nanofiltration
JP2009521600A JPWO2009004988A1 (ja) 2007-07-03 2008-06-27 ナノろ過によるレジスト剥離液連続使用システム
CN200880020488A CN101689480A (zh) 2007-07-03 2008-06-27 采用纳米过滤的抗蚀剂剥离液连续使用***

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007175648 2007-07-03
JP2007-175648 2007-07-03

Publications (1)

Publication Number Publication Date
WO2009004988A1 true WO2009004988A1 (ja) 2009-01-08

Family

ID=40226034

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061694 WO2009004988A1 (ja) 2007-07-03 2008-06-27 ナノろ過によるレジスト剥離液連続使用システム

Country Status (6)

Country Link
US (1) US20110036506A1 (ja)
JP (1) JPWO2009004988A1 (ja)
KR (1) KR20100037037A (ja)
CN (1) CN101689480A (ja)
TW (1) TW200921303A (ja)
WO (1) WO2009004988A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009258211A (ja) * 2008-04-14 2009-11-05 Toagosei Co Ltd 導電性高分子膜上のレジスト被膜の除去方法および除去装置
JP2011200788A (ja) * 2010-03-25 2011-10-13 Kobelco Eco-Solutions Co Ltd 水処理方法及び水処理装置
JP2012079830A (ja) * 2010-09-30 2012-04-19 Toppan Printing Co Ltd アルカリ剥離液の再生装置および方法
JP2012194536A (ja) * 2011-02-28 2012-10-11 Nomura Micro Sci Co Ltd レジスト剥離剤及びレジスト剥離性能評価方法
WO2012160721A1 (ja) * 2011-05-20 2012-11-29 パナソニック株式会社 フォトレジスト用剥離液、剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法
JP2012242696A (ja) * 2011-05-20 2012-12-10 Panasonic Corp フォトレジスト用剥離液
JP2018053176A (ja) * 2016-09-30 2018-04-05 日立化成株式会社 樹脂の分離方法
JP2018053175A (ja) * 2016-09-30 2018-04-05 日立化成株式会社 溶解処理装置及び溶解処理方法
JP2018054969A (ja) * 2016-09-30 2018-04-05 住友理工株式会社 印刷版の現像方法および現像装置
JP2018164115A (ja) * 2012-08-07 2018-10-18 東京エレクトロン株式会社 基板洗浄装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI535494B (zh) * 2011-12-23 2016-06-01 友達光電股份有限公司 光阻剝離液的供應系統及其供應方法
JP6045283B2 (ja) * 2012-10-11 2016-12-14 日本リファイン株式会社 レジスト剥離液の再生方法および再生装置
CN108054119B (zh) * 2017-12-06 2021-03-23 深圳市华星光电半导体显示技术有限公司 用于剥离工艺的剥离液机台及其工作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132514A (ja) * 1985-12-03 1987-06-15 Ngk Insulators Ltd クロスフロ−濾過器
JP2000005546A (ja) * 1998-06-25 2000-01-11 Sumitomo Chem Co Ltd 電子工業用薬品中の微粒子除去方法
JP2001228635A (ja) * 2000-02-16 2001-08-24 Sumitomo Chem Co Ltd 電子部品用処理液の製造装置及び製造方法
JP2003167358A (ja) * 2001-11-29 2003-06-13 Nagase & Co Ltd レジスト剥離廃液の再生装置及び再生方法
JP2004101999A (ja) * 2002-09-11 2004-04-02 Mitsubishi Chemical Engineering Corp 現像液のリサイクル供給装置
JP2006210751A (ja) * 2005-01-31 2006-08-10 Mitsubishi Chemical Engineering Corp シンナーのリサイクル供給装置
WO2006137194A1 (ja) * 2005-06-22 2006-12-28 Toagosei Co., Ltd. 基体表面上の有機被膜の除去方法および除去装置

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Publication number Priority date Publication date Assignee Title
JP3728945B2 (ja) * 1998-10-30 2005-12-21 オルガノ株式会社 フォトレジスト現像廃液からの現像液の回収再利用方法及び装置
WO2002098624A1 (en) * 2001-06-05 2002-12-12 Mikro Systems Inc. Methods for manufacturing three-dimensional devices and devices created thereby
US7518136B2 (en) * 2001-12-17 2009-04-14 Tecomet, Inc. Devices, methods, and systems involving cast computed tomography collimators
US6752545B2 (en) * 2001-08-16 2004-06-22 Nagase & Co., Ltd. Alkali-based treating liquid, treating liquid adjusting method and equipment, treating liquid supplying method and equipment
JP4010938B2 (ja) * 2002-12-25 2007-11-21 旭有機材工業株式会社 分子量分布を制御したフェノール樹脂の製造方法
JP4771049B2 (ja) * 2005-03-29 2011-09-14 栗田工業株式会社 硫酸リサイクル型洗浄システム
JP5048371B2 (ja) * 2007-03-29 2012-10-17 日本碍子株式会社 セラミック多孔質膜の製造方法及びセラミックフィルタの製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132514A (ja) * 1985-12-03 1987-06-15 Ngk Insulators Ltd クロスフロ−濾過器
JP2000005546A (ja) * 1998-06-25 2000-01-11 Sumitomo Chem Co Ltd 電子工業用薬品中の微粒子除去方法
JP2001228635A (ja) * 2000-02-16 2001-08-24 Sumitomo Chem Co Ltd 電子部品用処理液の製造装置及び製造方法
JP2003167358A (ja) * 2001-11-29 2003-06-13 Nagase & Co Ltd レジスト剥離廃液の再生装置及び再生方法
JP2004101999A (ja) * 2002-09-11 2004-04-02 Mitsubishi Chemical Engineering Corp 現像液のリサイクル供給装置
JP2006210751A (ja) * 2005-01-31 2006-08-10 Mitsubishi Chemical Engineering Corp シンナーのリサイクル供給装置
WO2006137194A1 (ja) * 2005-06-22 2006-12-28 Toagosei Co., Ltd. 基体表面上の有機被膜の除去方法および除去装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009258211A (ja) * 2008-04-14 2009-11-05 Toagosei Co Ltd 導電性高分子膜上のレジスト被膜の除去方法および除去装置
JP2011200788A (ja) * 2010-03-25 2011-10-13 Kobelco Eco-Solutions Co Ltd 水処理方法及び水処理装置
JP2012079830A (ja) * 2010-09-30 2012-04-19 Toppan Printing Co Ltd アルカリ剥離液の再生装置および方法
JP2012194536A (ja) * 2011-02-28 2012-10-11 Nomura Micro Sci Co Ltd レジスト剥離剤及びレジスト剥離性能評価方法
WO2012160721A1 (ja) * 2011-05-20 2012-11-29 パナソニック株式会社 フォトレジスト用剥離液、剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法
JP2012242696A (ja) * 2011-05-20 2012-12-10 Panasonic Corp フォトレジスト用剥離液
CN103688222A (zh) * 2011-05-20 2014-03-26 松下电器产业株式会社 光致抗蚀剂用剥离液、剥离液循环***和运转方法以及剥离液的循环方法
JP2018164115A (ja) * 2012-08-07 2018-10-18 東京エレクトロン株式会社 基板洗浄装置
JP2018053176A (ja) * 2016-09-30 2018-04-05 日立化成株式会社 樹脂の分離方法
JP2018053175A (ja) * 2016-09-30 2018-04-05 日立化成株式会社 溶解処理装置及び溶解処理方法
JP2018054969A (ja) * 2016-09-30 2018-04-05 住友理工株式会社 印刷版の現像方法および現像装置

Also Published As

Publication number Publication date
CN101689480A (zh) 2010-03-31
KR20100037037A (ko) 2010-04-08
US20110036506A1 (en) 2011-02-17
TW200921303A (en) 2009-05-16
JPWO2009004988A1 (ja) 2010-08-26

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