KR100214408B1 - 반도체 소자의 터미네이션 구조 및 그 제조방법 - Google Patents

반도체 소자의 터미네이션 구조 및 그 제조방법 Download PDF

Info

Publication number: KR100214408B1
Authority: KR; South Korea
Prior art keywords: layer; polysilicon; region; material layer; insulating material
Prior art date: 1995-10-11

Application number

KR1019960045804A

Other languages

English (en)

Korean (ko)

Other versions

KR970024163A (ko

Inventor

다니엘 엠. 킨저

케네쓰 와저스

Original Assignee

클레버터 레슬리 씨.

인터내쇼널 렉티파이어 코포레이션

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-10-11

Filing date

1996-10-11

Publication date

1999-08-02

1996-10-11 Application filed by 클레버터 레슬리 씨., 인터내쇼널 렉티파이어 코포레이션 filed Critical 클레버터 레슬리 씨.

1997-05-30 Publication of KR970024163A publication Critical patent/KR970024163A/ko

1999-08-02 Application granted granted Critical

1999-08-02 Publication of KR100214408B1 publication Critical patent/KR100214408B1/ko

Links

238000000034 method Methods 0.000 title claims abstract description 44
239000004065 semiconductor Substances 0.000 title claims abstract description 37
238000004519 manufacturing process Methods 0.000 title claims abstract description 10
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 100
229920005591 polysilicon Polymers 0.000 claims description 100
238000009792 diffusion process Methods 0.000 claims description 57
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 55
229910052710 silicon Inorganic materials 0.000 claims description 55
239000010703 silicon Substances 0.000 claims description 55
239000011810 insulating material Substances 0.000 claims description 49
239000000758 substrate Substances 0.000 claims description 48
239000012535 impurity Substances 0.000 claims description 19
238000005530 etching Methods 0.000 claims description 17
230000002093 peripheral effect Effects 0.000 claims description 13
239000012212 insulator Substances 0.000 claims description 9
239000000463 material Substances 0.000 claims description 9
239000007943 implant Substances 0.000 claims description 8
238000000151 deposition Methods 0.000 claims description 7
230000003647 oxidation Effects 0.000 claims description 4
238000007254 oxidation reaction Methods 0.000 claims description 4
238000000059 patterning Methods 0.000 claims 10
239000012774 insulation material Substances 0.000 claims 5
238000009413 insulation Methods 0.000 claims 1
230000015556 catabolic process Effects 0.000 abstract description 11
230000000873 masking effect Effects 0.000 abstract description 4
230000005669 field effect Effects 0.000 abstract 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
229920002120 photoresistant polymer Polymers 0.000 description 8
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
235000012239 silicon dioxide Nutrition 0.000 description 4
239000000377 silicon dioxide Substances 0.000 description 4
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
229910052796 boron Inorganic materials 0.000 description 2
230000005684 electric field Effects 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
238000000926 separation method Methods 0.000 description 2
238000001039 wet etching Methods 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
230000001413 cellular effect Effects 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000010494 dissociation reaction Methods 0.000 description 1
230000005593 dissociations Effects 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000004744 fabric Substances 0.000 description 1
238000002513 implantation Methods 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000002955 isolation Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
230000002441 reversible effect Effects 0.000 description 1
238000003892 spreading Methods 0.000 description 1
230000036962 time dependent Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Electrodes Of Semiconductors (AREA)
Bipolar Transistors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

KR1019960045804A 1995-10-11 1996-10-11 반도체 소자의 터미네이션 구조 및 그 제조방법 KR100214408B1 (ko)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date
US507695P	1995-10-11	1995-10-11
US60/005,076		1995-10-11
JP60/005,076		1995-10-11
US668895P	1995-11-14	1995-11-14
JP60/006,688		1995-11-14
US60/006,688		1995-11-14

Publications (2)

Publication Number	Publication Date
KR970024163A KR970024163A (ko)	1997-05-30
KR100214408B1 true KR100214408B1 (ko)	1999-08-02

Family

ID=26673893

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019960045804A KR100214408B1 (ko)	1995-10-11	1996-10-11	반도체 소자의 터미네이션 구조 및 그 제조방법

Country Status (8)

Country	Link
US (1)	US5940721A (de)
JP (1)	JP3069054B2 (de)
KR (1)	KR100214408B1 (de)
DE (1)	DE19641838A1 (de)
FR (1)	FR2739976B1 (de)
GB (1)	GB2306249B (de)
IT (1)	IT1285780B1 (de)
SG (1)	SG47184A1 (de)

Families Citing this family (18)

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JP3502531B2 (ja) *	1997-08-28	2004-03-02	株式会社ルネサステクノロジ	半導体装置の製造方法
US6022790A (en) *	1998-08-05	2000-02-08	International Rectifier Corporation	Semiconductor process integration of a guard ring structure
US6355508B1 (en) *	1998-09-02	2002-03-12	Micron Technology, Inc.	Method for forming electrostatic discharge protection device having a graded junction
US7098506B2 (en)	2000-06-28	2006-08-29	Renesas Technology Corp.	Semiconductor device and method for fabricating the same
JP2000196075A (ja) *	1998-12-25	2000-07-14	Hitachi Ltd	半導体装置及びその製造方法
US6642558B1 (en) *	2000-03-20	2003-11-04	Koninklijke Philips Electronics N.V.	Method and apparatus of terminating a high voltage solid state device
US6833984B1 (en)	2000-05-03	2004-12-21	Rambus, Inc.	Semiconductor module with serial bus connection to multiple dies
US6781203B2 (en) *	2001-11-09	2004-08-24	International Rectifier Corporation	MOSFET with reduced threshold voltage and on resistance and process for its manufacture
US6744117B2 (en) *	2002-02-28	2004-06-01	Motorola, Inc.	High frequency semiconductor device and method of manufacture
US6721189B1 (en) *	2002-03-13	2004-04-13	Rambus, Inc.	Memory module
JP2003318395A (ja) *	2002-04-19	2003-11-07	Hitachi Ltd	半導体装置の製造方法
US20050259368A1 (en) *	2003-11-12	2005-11-24	Ted Letavic	Method and apparatus of terminating a high voltage solid state device
JP5128100B2 (ja) *	2006-09-29	2013-01-23	三菱電機株式会社	電力用半導体装置
JP2007036299A (ja) *	2006-11-13	2007-02-08	Renesas Technology Corp	半導体装置及びその製造方法
JP5353093B2 (ja) *	2008-07-15	2013-11-27	株式会社デンソー	半導体装置の製造方法
US20110084332A1 (en) *	2009-10-08	2011-04-14	Vishay General Semiconductor, Llc.	Trench termination structure
US9269765B2 (en) *	2013-10-21	2016-02-23	Panasonic Intellectual Property Management Co., Ltd.	Semiconductor device having gate wire disposed on roughened field insulating film
US9543208B2 (en)	2014-02-24	2017-01-10	Infineon Technologies Ag	Method of singulating semiconductor devices using isolation trenches

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DE3012430A1 (de) *	1980-03-31	1981-10-08	Siemens AG, 1000 Berlin und 8000 München	Planare halbleiteranordnung mit erhoehter durchbruchsspannung
US4414560A (en) *	1980-11-17	1983-11-08	International Rectifier Corporation	Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
US4412242A (en) *	1980-11-17	1983-10-25	International Rectifier Corporation	Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
DE3382294D1 (de) *	1982-02-22	1991-07-04	Toshiba Kawasaki Kk	Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen.
US4532534A (en) *	1982-09-07	1985-07-30	Rca Corporation	MOSFET with perimeter channel
US4966858A (en) *	1989-11-02	1990-10-30	Motorola, Inc.	Method of fabricating a lateral semiconductor structure including field plates for self-alignment
JP2934325B2 (ja) *	1990-05-02	1999-08-16	三菱電機株式会社	半導体装置およびその製造方法
US5240872A (en) *	1990-05-02	1993-08-31	Mitsubishi Denki Kabushiki Kaisha	Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions
US5404040A (en) *	1990-12-21	1995-04-04	Siliconix Incorporated	Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) *	1990-12-21	1994-04-19	Siliconix Incorporated	Low on-resistance power MOS technology
IT1254799B (it) *	1992-02-18	1995-10-11	St Microelectronics Srl	Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
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IT1272567B (it) *	1992-09-15	1997-06-23	Int Rectifier Corp	Dispositivo transistore di potenza, dotato di una regione ultraprofonda a concentrazione maggiorata
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JP2870402B2 (ja) *	1994-03-10	1999-03-17	株式会社デンソー	絶縁ゲート型電界効果トランジスタ

1996
- 1996-10-03 US US08/725,566 patent/US5940721A/en not_active Expired - Lifetime
- 1996-10-10 DE DE19641838A patent/DE19641838A1/de not_active Ceased
- 1996-10-10 GB GB9621156A patent/GB2306249B/en not_active Expired - Fee Related
- 1996-10-10 IT IT96MI002099A patent/IT1285780B1/it active IP Right Grant
- 1996-10-11 JP JP8305443A patent/JP3069054B2/ja not_active Expired - Lifetime
- 1996-10-11 FR FR9612435A patent/FR2739976B1/fr not_active Expired - Fee Related
- 1996-10-11 KR KR1019960045804A patent/KR100214408B1/ko not_active IP Right Cessation
- 1996-10-11 SG SG1996010853A patent/SG47184A1/en unknown

Also Published As

Publication number	Publication date
FR2739976B1 (fr)	1999-04-02
GB2306249B (en)	1999-11-17
FR2739976A1 (fr)	1997-04-18
JP3069054B2 (ja)	2000-07-24
JPH09172175A (ja)	1997-06-30
GB2306249A (en)	1997-04-30
KR970024163A (ko)	1997-05-30
DE19641838A1 (de)	1997-06-05
SG47184A1 (en)	1998-03-20
GB9621156D0 (en)	1996-11-27
IT1285780B1 (it)	1998-06-18
ITMI962099A1 (it)	1998-04-10
US5940721A (en)	1999-08-17

Legal Events

Date	Code	Title	Description
1997-03-05	A201	Request for examination
1999-04-22	E701	Decision to grant or registration of patent right
1999-05-19	GRNT	Written decision to grant
2003-05-14	FPAY	Annual fee payment	Payment date: 20030515 Year of fee payment: 5
2004-05-20	LAPS	Lapse due to unpaid annual fee

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JP2001284585A (ja)	2001-10-12	電界効果トランジスタ
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