IT1254799B - Transistore vdmos con migliorate caratteristiche di tenuta di tensione. - Google Patents
Transistore vdmos con migliorate caratteristiche di tenuta di tensione.Info
- Publication number
- IT1254799B IT1254799B ITMI920344A ITMI920344A IT1254799B IT 1254799 B IT1254799 B IT 1254799B IT MI920344 A ITMI920344 A IT MI920344A IT MI920344 A ITMI920344 A IT MI920344A IT 1254799 B IT1254799 B IT 1254799B
- Authority
- IT
- Italy
- Prior art keywords
- diffusion
- region
- field
- cells
- oxide
- Prior art date
Links
- 238000007789 sealing Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 6
- 230000002093 peripheral effect Effects 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 210000000746 body region Anatomy 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
La tensione di breakdown di un transistore VDMOS è marcatamente aumentata, mantenendo inalterate le caratteristiche elettriche del dispositivo, introducendo un impianto di isolamento di campo (abitualmente presente nei più avanzati processi misti), effettuato in modo autoallineato nella regione di transizione tra ossido spesso di campo e ossido sottile di gate e vincolandolo al potenziale di source del transistore. Questa diffusione è posizionata in modo tale che la sua diffusione laterale si estenda oltre la regione di ossido spesso di campo sotto la regione di ossido sottile di gate. La regione così costituita separa una matrice di celle di source da una diffusione profonda di drain. La connessione elettrica può essere facilmente realizzata estendendo la diffusione di body di una o più celle periferiche affacciate alla zona di bordo fino ad intersecare la diffusione di isolamento di campo sottostante il bordo dell'ossido di campo sovrastato dalla struttura di field-plate. E' sufficiente estendere la regione di body di una cella periferica ogni certo numero di celle di bordo per stabilire tale connessione salvaguardando il funzionamento delle altre celle periferiche così da non ridurre in modo sensibile il perimetro attivo del canale del dispositivo. L'invenzione è particolarmente utile nel caso di VDMOS integrati in processi misti ad alta densità in cui se si vogliono appunto contenere le dimensioni non è possibile o pratico formare diffusioni profonde per le celle periferiche di bordo per aumentare il raggio di curvatura della giunzione body/drain.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI920344A IT1254799B (it) | 1992-02-18 | 1992-02-18 | Transistore vdmos con migliorate caratteristiche di tenuta di tensione. |
DE69315239T DE69315239T2 (de) | 1992-02-18 | 1993-02-11 | VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik |
EP93830047A EP0557253B1 (en) | 1992-02-18 | 1993-02-11 | VDMOS transistor with improved breakdown characteristics |
US08/019,124 US5430316A (en) | 1992-02-18 | 1993-02-17 | VDMOS transistor with improved breakdown characteristics |
JP5055235A JPH0613622A (ja) | 1992-02-18 | 1993-02-18 | 改良されたブレークダウン特性を有するvdmosトランジスタ及びその製造方法 |
US08/403,629 US5589405A (en) | 1992-02-18 | 1995-04-21 | Method for fabricating VDMOS transistor with improved breakdown characteristics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI920344A IT1254799B (it) | 1992-02-18 | 1992-02-18 | Transistore vdmos con migliorate caratteristiche di tenuta di tensione. |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI920344A0 ITMI920344A0 (it) | 1992-02-18 |
ITMI920344A1 ITMI920344A1 (it) | 1993-08-18 |
IT1254799B true IT1254799B (it) | 1995-10-11 |
Family
ID=11362019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI920344A IT1254799B (it) | 1992-02-18 | 1992-02-18 | Transistore vdmos con migliorate caratteristiche di tenuta di tensione. |
Country Status (5)
Country | Link |
---|---|
US (2) | US5430316A (it) |
EP (1) | EP0557253B1 (it) |
JP (1) | JPH0613622A (it) |
DE (1) | DE69315239T2 (it) |
IT (1) | IT1254799B (it) |
Families Citing this family (106)
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US9136375B2 (en) | 2013-11-21 | 2015-09-15 | United Microelectronics Corp. | Semiconductor structure |
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EP3151283A1 (en) * | 2015-09-29 | 2017-04-05 | Nexperia B.V. | Vertical dmos bjt semiconductor device |
DE102017130213B4 (de) * | 2017-12-15 | 2021-10-21 | Infineon Technologies Ag | Planarer feldeffekttransistor |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS56110264A (en) * | 1980-02-04 | 1981-09-01 | Oki Electric Ind Co Ltd | High withstand voltage mos transistor |
JPS60249367A (ja) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | 絶縁ゲ−ト形トランジスタ |
IT1213234B (it) * | 1984-10-25 | 1989-12-14 | Sgs Thomson Microelectronics | Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos. |
US5034790A (en) * | 1989-05-23 | 1991-07-23 | U.S. Philips Corp. | MOS transistor with semi-insulating field plate and surface-adjoining top layer |
JPH03155167A (ja) * | 1989-11-13 | 1991-07-03 | Sanyo Electric Co Ltd | 縦型mosfet |
IT1252625B (it) * | 1991-12-05 | 1995-06-19 | Cons Ric Microelettronica | Processo di fabbricazione di transistors a effetto di campo con gate isolato (igfet) a bassa densita' di corto circuiti tra gate e source e dispositivi con esso ottenuti |
IT1254799B (it) * | 1992-02-18 | 1995-10-11 | St Microelectronics Srl | Transistore vdmos con migliorate caratteristiche di tenuta di tensione. |
JP3168763B2 (ja) * | 1992-03-30 | 2001-05-21 | 株式会社デンソー | 半導体装置及びその製造方法 |
US5474946A (en) * | 1995-02-17 | 1995-12-12 | International Rectifier Corporation | Reduced mask process for manufacture of MOS gated devices |
-
1992
- 1992-02-18 IT ITMI920344A patent/IT1254799B/it active IP Right Grant
-
1993
- 1993-02-11 EP EP93830047A patent/EP0557253B1/en not_active Expired - Lifetime
- 1993-02-11 DE DE69315239T patent/DE69315239T2/de not_active Expired - Fee Related
- 1993-02-17 US US08/019,124 patent/US5430316A/en not_active Expired - Fee Related
- 1993-02-18 JP JP5055235A patent/JPH0613622A/ja active Pending
-
1995
- 1995-04-21 US US08/403,629 patent/US5589405A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0557253A2 (en) | 1993-08-25 |
EP0557253A3 (en) | 1993-09-29 |
EP0557253B1 (en) | 1997-11-19 |
US5589405A (en) | 1996-12-31 |
ITMI920344A1 (it) | 1993-08-18 |
US5430316A (en) | 1995-07-04 |
JPH0613622A (ja) | 1994-01-21 |
ITMI920344A0 (it) | 1992-02-18 |
DE69315239T2 (de) | 1998-03-19 |
DE69315239D1 (de) | 1998-01-02 |
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