JPH0558259B2 - - Google Patents

Info

Publication number
JPH0558259B2
JPH0558259B2 JP59081058A JP8105884A JPH0558259B2 JP H0558259 B2 JPH0558259 B2 JP H0558259B2 JP 59081058 A JP59081058 A JP 59081058A JP 8105884 A JP8105884 A JP 8105884A JP H0558259 B2 JPH0558259 B2 JP H0558259B2
Authority
JP
Japan
Prior art keywords
wire
lead frame
bonding
oxidizing atmosphere
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59081058A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60225450A (ja
Inventor
Shoji Shiga
Tooru Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP59081058A priority Critical patent/JPS60225450A/ja
Publication of JPS60225450A publication Critical patent/JPS60225450A/ja
Publication of JPH0558259B2 publication Critical patent/JPH0558259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001Core members of the connector
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/732Location after the connecting process
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/85053Bonding environment
    • H01L2224/85054Composition of the atmosphere
    • H01L2224/85075Composition of the atmosphere being inert
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2924/01005Boron [B]
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    • H01L2924/151Die mounting substrate
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    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/181Encapsulation
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    • H01L2924/20Parameters
    • H01L2924/201Temperature ranges
    • H01L2924/20107Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP59081058A 1984-04-24 1984-04-24 半導体装置の製造法 Granted JPS60225450A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59081058A JPS60225450A (ja) 1984-04-24 1984-04-24 半導体装置の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59081058A JPS60225450A (ja) 1984-04-24 1984-04-24 半導体装置の製造法

Publications (2)

Publication Number Publication Date
JPS60225450A JPS60225450A (ja) 1985-11-09
JPH0558259B2 true JPH0558259B2 (ko) 1993-08-26

Family

ID=13735801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59081058A Granted JPS60225450A (ja) 1984-04-24 1984-04-24 半導体装置の製造法

Country Status (1)

Country Link
JP (1) JPS60225450A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771330A (en) * 1987-05-13 1988-09-13 Lsi Logic Corporation Wire bonds and electrical contacts of an integrated circuit device
JP2679158B2 (ja) * 1988-09-29 1997-11-19 日本電気株式会社 半導体装置の製造装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433659A (en) * 1977-08-22 1979-03-12 Hitachi Ltd Bonding wire
JPS54162471A (en) * 1978-06-13 1979-12-24 Nec Corp Semiconductor device
JPS5693338A (en) * 1979-06-09 1981-07-28 Itt Planar semiconductor device and method and apparatus for manufacturing same
JPS5958833A (ja) * 1982-09-28 1984-04-04 Shinkawa Ltd 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433659A (en) * 1977-08-22 1979-03-12 Hitachi Ltd Bonding wire
JPS54162471A (en) * 1978-06-13 1979-12-24 Nec Corp Semiconductor device
JPS5693338A (en) * 1979-06-09 1981-07-28 Itt Planar semiconductor device and method and apparatus for manufacturing same
JPS5958833A (ja) * 1982-09-28 1984-04-04 Shinkawa Ltd 半導体装置

Also Published As

Publication number Publication date
JPS60225450A (ja) 1985-11-09

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