JPS54162471A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54162471A JPS54162471A JP7193178A JP7193178A JPS54162471A JP S54162471 A JPS54162471 A JP S54162471A JP 7193178 A JP7193178 A JP 7193178A JP 7193178 A JP7193178 A JP 7193178A JP S54162471 A JPS54162471 A JP S54162471A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- frame
- insulation film
- external lead
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To avoid the corrosion of Al even with water immersed in the package, by covering the semiconductor pellet surface, surface other than the connection of the Al electrode, surface of metal fine wire, and the connecting surface between the external lead and the Al electrode with the insulation film in continuity. CONSTITUTION:On the island 1 of the lead frame 9, the semiconductor pellet 2 covering the part other than the electrode with the protective film is mounted, and the Al electrode 4 of the pellet 2 and the part to be the external lead of the frame 9 are electrically connected with the Au wire 5. Further, the part not requiring the insulation film of the frame 9 is covered with the mask 10 of stainless steel and it is put in the sputtering unit and the insulation film 8 is coated on the entire surface. After that, the mask 10 is removed for resin sealing 7 and the external lead 6 is formed by cutting off the frame 9. Thus, insulation film is attached to the entire surface of the exposed part including the rear side of the Au wire 5, and the occurrence of deficient rate is zeroed even under the conditions causing the deficient rate of 50% in usual cases.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7193178A JPS54162471A (en) | 1978-06-13 | 1978-06-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7193178A JPS54162471A (en) | 1978-06-13 | 1978-06-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54162471A true JPS54162471A (en) | 1979-12-24 |
Family
ID=13474747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7193178A Pending JPS54162471A (en) | 1978-06-13 | 1978-06-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54162471A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60225450A (en) * | 1984-04-24 | 1985-11-09 | Furukawa Electric Co Ltd:The | Manufacture of semiconductor device |
JPH0294449A (en) * | 1988-09-29 | 1990-04-05 | Nec Corp | Equipment for manufacturing semiconductor device |
JPH02106939A (en) * | 1988-10-17 | 1990-04-19 | Semiconductor Energy Lab Co Ltd | Manufacture of member for electronic device |
-
1978
- 1978-06-13 JP JP7193178A patent/JPS54162471A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60225450A (en) * | 1984-04-24 | 1985-11-09 | Furukawa Electric Co Ltd:The | Manufacture of semiconductor device |
JPH0558259B2 (en) * | 1984-04-24 | 1993-08-26 | Furukawa Electric Co Ltd | |
JPH0294449A (en) * | 1988-09-29 | 1990-04-05 | Nec Corp | Equipment for manufacturing semiconductor device |
JPH02106939A (en) * | 1988-10-17 | 1990-04-19 | Semiconductor Energy Lab Co Ltd | Manufacture of member for electronic device |
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