JPS5958833A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5958833A
JPS5958833A JP57169392A JP16939282A JPS5958833A JP S5958833 A JPS5958833 A JP S5958833A JP 57169392 A JP57169392 A JP 57169392A JP 16939282 A JP16939282 A JP 16939282A JP S5958833 A JPS5958833 A JP S5958833A
Authority
JP
Japan
Prior art keywords
copper
wire
lead frame
semiconductor device
iron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57169392A
Other languages
English (en)
Other versions
JPH0141028B2 (ja
Inventor
Tomio Kobayashi
十三男 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP57169392A priority Critical patent/JPS5958833A/ja
Publication of JPS5958833A publication Critical patent/JPS5958833A/ja
Publication of JPH0141028B2 publication Critical patent/JPH0141028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体装置に関する。
半導体装置は、図に示すように、リードフレームｌに半
導体ペレット２が取付けられ、リードフレーム１のリー
ドと半導体ペレット２の’ｔ４ｆｉとをワイヤ３で接続
してなる。
前記リードフレーム１は、一般には銅、コバール材の表
面に金又は銀メッキ処理を施し、ワイヤ３との接続を良
好にしている。しかしながら、リードフレーｌｈ　ｉ　
ｇｃ金又は銀メッキを施すことは、金又は銀が高価であ
るので、半導体装置がコスト高になる。
そこで最近、特開昭５６−９３３３８号公報に示すよう
に、銅又は銅合金よりなるリードフレームに直接、即ち
表面処理を行わない状態で半導体ペレット及びワイヤの
ホンディングを行うことが行われている。しかしながら
、銅又は銅合金材だけでは表面が硬く、また表面が黒ず
んで酸化膜ができるので、ワイヤの接続が弱く、ボンデ
ィングされたワイヤがはがれることが時々発生する。
本発明は上記従来技術の欠点に鑑みなされたもので、品
質の優れた半導体装置を提供することを目的とする。
本発明は銅又は銅系合金もしくは鉄又は鉄系合金のリー
ドフレームの表面（こ銅メツキ処理を施したことを特徴
とする。
銅又は銅系合金（例えば銅−錫合金、銅−錫一燐合金）
もしくは鉄又は鉄系合金（例えば鉄−ニッケル合金、鉄
−ニッケルーコバルト合金）の基材そのものの表面は硬
いが、この表面に銅メツキ処理を施すことにより、リー
ドフレームの表面は軟質相になる。そこで、ワイヤはこ
の軟質材よりなる銅メツキ部分に接続されるので、接続
の強度が増加し、ワイヤのはがれがなくなる。またリー
ドフレームは銅メッキされているので、表面の酸化が防
止さイ１、この点からもワイヤの接続が強固になる。
なお、前記銅メツキ処理はリードフレームの全面に行っ
てもよいが、少なくともワイヤが接続されるリードのみ
（こ施せは十分である。またワイヤの接続は、従来と同
様に窒素ガス等の不活性ガス雰囲気中で行うことにより
、更に良好なボンディングが行えることは勿論である。
以上の説明から明らかな如く、本発明によれば、銅又は
銅系合金もしくは鉄又は鉄系合金よりなるリードフレー
ムの表面に銅メツキ処理が施してなるので、τツイヤ接
続の強度が増大し、ワイヤはが第１がなくなり、品質が
向上する。
【図面の簡単な説明】 図は半導体装置の概略断面図である。 １・・・リードフレーム、　　　２・・・半４体ベレッ
ト、３・・・ワイヤ。

Claims (1)

    【特許請求の範囲】
  1. リードフレームに半導体ペレットが取付けられ、リード
    フレームのリードと半導体ベレットの’ａ極とをワイヤ
    で接続してなる半導体装置において、前記リードフレー
    ムは銅又は銅系合金もしくは鉄又は鉄系合金よりなり、
    少なくともワイヤが接続されるリードの表面−こ銅メツ
    キ処理を施してなることを特徴とする半導体装置。
JP57169392A 1982-09-28 1982-09-28 半導体装置 Granted JPS5958833A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57169392A JPS5958833A (ja) 1982-09-28 1982-09-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57169392A JPS5958833A (ja) 1982-09-28 1982-09-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS5958833A true JPS5958833A (ja) 1984-04-04
JPH0141028B2 JPH0141028B2 (ja) 1989-09-01

Family

ID=15885744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57169392A Granted JPS5958833A (ja) 1982-09-28 1982-09-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS5958833A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225450A (ja) * 1984-04-24 1985-11-09 Furukawa Electric Co Ltd:The 半導体装置の製造法
JPS60240149A (ja) * 1984-05-15 1985-11-29 Sharp Corp 半導体装置
JPS6180844A (ja) * 1984-09-28 1986-04-24 Furukawa Electric Co Ltd:The 半導体リ−ドフレ−ム用条材
JPS61201762A (ja) * 1985-03-05 1986-09-06 Furukawa Electric Co Ltd:The リードフレーム用Ｃｕ系条材の製造方法
JPS62213269A (ja) * 1986-03-14 1987-09-19 Hitachi Cable Ltd 半導体用リ−ドフレ−ム
US4707724A (en) * 1984-06-04 1987-11-17 Hitachi, Ltd. Semiconductor device and method of manufacturing thereof
DE3828700A1 (de) * 1987-09-16 1989-04-06 Nat Semiconductor Corp Kupferplattierter bleirahmen fuer halbleiter-kunststoff-gehaeuse
JPH05283596A (ja) * 1992-03-14 1993-10-29 Kyushu Hitachi Maxell Ltd 半導体装置のリードフレーム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138246A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of semicondoctor device
JPS5678357U (ja) * 1979-11-09 1981-06-25
JPS57109350A (en) * 1980-12-26 1982-07-07 Toshiba Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138246A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of semicondoctor device
JPS5678357U (ja) * 1979-11-09 1981-06-25
JPS57109350A (en) * 1980-12-26 1982-07-07 Toshiba Corp Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225450A (ja) * 1984-04-24 1985-11-09 Furukawa Electric Co Ltd:The 半導体装置の製造法
JPH0558259B2 (ja) * 1984-04-24 1993-08-26 Furukawa Electric Co Ltd
JPS60240149A (ja) * 1984-05-15 1985-11-29 Sharp Corp 半導体装置
US4707724A (en) * 1984-06-04 1987-11-17 Hitachi, Ltd. Semiconductor device and method of manufacturing thereof
JPS6180844A (ja) * 1984-09-28 1986-04-24 Furukawa Electric Co Ltd:The 半導体リ−ドフレ−ム用条材
JPH0160948B2 (ja) * 1984-09-28 1989-12-26 Furukawa Electric Co Ltd
JPS61201762A (ja) * 1985-03-05 1986-09-06 Furukawa Electric Co Ltd:The リードフレーム用Ｃｕ系条材の製造方法
JPS62213269A (ja) * 1986-03-14 1987-09-19 Hitachi Cable Ltd 半導体用リ−ドフレ−ム
DE3828700A1 (de) * 1987-09-16 1989-04-06 Nat Semiconductor Corp Kupferplattierter bleirahmen fuer halbleiter-kunststoff-gehaeuse
DE3828700C2 (de) * 1987-09-16 2002-04-18 Nat Semiconductor Corp Kupferplattierter Leiterrahmen für Halbleiter-Kunststoff-Gehäuse
JPH05283596A (ja) * 1992-03-14 1993-10-29 Kyushu Hitachi Maxell Ltd 半導体装置のリードフレーム

Also Published As

Publication number Publication date
JPH0141028B2 (ja) 1989-09-01

Similar Documents

Publication Publication Date Title
US4141029A (en) Integrated circuit device
JPS6148543A (ja) 半導体素子結線用銅合金線
JPS60257160A (ja) 半導体装置
JPH0629439A (ja) 樹脂用インサート部材
JPS5958833A (ja) 半導体装置
JPS60193365A (ja) リ−ドフレ−ム
JPH1074879A (ja) 半導体装置用リードフレーム
JP2771145B2 (ja) 耐腐食性リードフレーム
JPS62287657A (ja) 半導体装置
JPS5868958A (ja) リ−ドフレ−ム
JPH03149865A (ja) リードフレーム
JPH01117052A (ja) Ｉｃリードフレーム
JPS60149154A (ja) 半導体装置の製造方法
JPS5867053A (ja) リ−ドフレ−ム
JP2721259B2 (ja) ワイヤボンディング方法及びそれに使用する銅系リードフレーム
JPS63102247A (ja) 樹脂封止型半導体装置
JPS6232622B2 (ja)
JPH04155949A (ja) 樹脂封止型半導体装置
JPS62213269A (ja) 半導体用リ−ドフレ−ム
JPH0455336B2 (ja)
JPH0870075A (ja) リードフレーム及びリードフレーム用素材
JPS61292928A (ja) 半導体装置
JPH01187958A (ja) リードフレーム
JPS59144160A (ja) プラスチツク封止型ｉｃ
JPS6042853A (ja) 半導体装置