JPH0227591A - 記憶装置のセンスアンプ分割制御回路 - Google Patents

記憶装置のセンスアンプ分割制御回路

Info

Publication number: JPH0227591A
Authority: JP; Japan
Prior art keywords: sensing; sense amplifier; sensing control; sense amplifiers; circuit
Prior art date: 1988-06-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP63329522A

Other languages

English (en)

Japanese (ja)

Inventor

Dae-Je Chin

ダエ―ジェ　チン

Chang-Hyun Kim

チャン―ヒュン　キム

Hong-Sun Hwang

ホン―スン　ファン

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-06-07

Filing date

1988-12-28

Publication date

1990-01-30

1988-12-28 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1990-01-30 Publication of JPH0227591A publication Critical patent/JPH0227591A/ja

Status Pending legal-status Critical Current

Links

239000002184 metal Substances 0.000 claims description 5
230000003247 decreasing effect Effects 0.000 abstract description 2
230000007423 decrease Effects 0.000 description 6
238000010586 diagram Methods 0.000 description 6
230000000694 effects Effects 0.000 description 3
230000003111 delayed effect Effects 0.000 description 2
230000003071 parasitic effect Effects 0.000 description 2
230000007704 transition Effects 0.000 description 2
206010011224 Cough Diseases 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
238000007599 discharging Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical group O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Static Random-Access Memory (AREA)

JP63329522A 1988-06-07 1988-12-28 記憶装置のセンスアンプ分割制御回路 Pending JPH0227591A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR88-6797		1988-06-07
KR1019880006797A KR910009551B1 (ko)	1988-06-07	1988-06-07	메모리장치의 센스앰프 분할 제어회로

Publications (1)

Publication Number	Publication Date
JPH0227591A true JPH0227591A (ja)	1990-01-30

Family

ID=19275005

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP63329522A Pending JPH0227591A (ja)	1988-06-07	1988-12-28	記憶装置のセンスアンプ分割制御回路

Country Status (7)

Country	Link
US (1)	US4948993A (el)
JP (1)	JPH0227591A (el)
KR (1)	KR910009551B1 (el)
DE (1)	DE3844154A1 (el)
FR (1)	FR2632439A1 (el)
GB (1)	GB2220537B (el)
NL (1)	NL8803222A (el)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5422853A (en) *	1992-11-24	1995-06-06	Oki Electric Industry Co., Ltd.	Sense amplifier control circuit for semiconductor memory
US6088270A (en) *	1992-11-12	2000-07-11	United Memories, Inc.	Sense amplifier with local write drivers

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3260393B2 (ja) *	1991-02-01	2002-02-25	株式会社東芝	ダイナミック型半導体記憶装置
DE69028625T2 (de) *	1990-06-12	1997-01-30	Fujitsu Ltd	Dynamische Speichereinrichtung mit wahlfreiem Zugriff
JP3319610B2 (ja) *	1991-11-22	2002-09-03	日本テキサス・インスツルメンツ株式会社	信号伝達回路
JP2672721B2 (ja) *	1991-05-27	1997-11-05	株式会社東芝	センスアンプ回路
US5901088A (en) *	1998-02-11	1999-05-04	Ramtron International Corporation	Sense amplifier utilizing a balancing resistor
US6026042A (en) *	1998-04-10	2000-02-15	Micron Technology, Inc.	Method and apparatus for enhancing the performance of semiconductor memory devices
KR100298443B1 (ko) *	1998-08-18	2001-08-07	김영환	센스앰프제어회로
JP3453552B2 (ja)	2000-08-31	2003-10-06	松下電器産業株式会社	半導体記憶装置
JP2002208277A (ja)	2001-01-05	2002-07-26	Toshiba Corp	半導体記憶装置のセンスアンプ制御回路
KR101391355B1 (ko) *	2007-07-23	2014-05-02	삼성전자주식회사	반도체 메모리 장치 및 그것의 데이터 감지 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5948889A (ja) *	1982-09-10	1984-03-21	Hitachi Ltd	Ｍｏｓ記憶装置
JPS63164092A (ja) *	1986-12-26	1988-07-07	Toshiba Corp	半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4031522A (en) *	1975-07-10	1977-06-21	Burroughs Corporation	Ultra high sensitivity sense amplifier for memories employing single transistor cells
US4533843A (en) *	1978-09-07	1985-08-06	Texas Instruments Incorporated	High performance dynamic sense amplifier with voltage boost for row address lines
US4543501A (en) *	1978-09-22	1985-09-24	Texas Instruments Incorporated	High performance dynamic sense amplifier with dual channel grounding transistor
US4543500A (en) *	1978-09-22	1985-09-24	Texas Instruments Incorporated	High performance dynamic sense amplifier voltage boost for row address lines
JPS5819793A (ja) *	1981-07-27	1983-02-04	Toshiba Corp	半導体メモリ装置
JPS592365A (ja) *	1982-06-28	1984-01-07	Fujitsu Ltd	ダイナミツク型半導体記憶装置
JPH0746500B2 (ja) *	1984-03-19	1995-05-17	株式会社日立製作所	集積回路メモリ装置
US4604732A (en) *	1984-05-29	1986-08-05	Thomson Components-Mostek Corporation	Power supply dependent voltage reference circuit
JPS6177198A (ja) *	1984-09-21	1986-04-19	Toshiba Corp	半導体記憶装置
JPS62270098A (ja) *	1986-05-19	1987-11-24	Toshiba Corp	半導体センス回路

1988
- 1988-06-07 KR KR1019880006797A patent/KR910009551B1/ko not_active IP Right Cessation
- 1988-12-27 US US07/290,741 patent/US4948993A/en not_active Expired - Lifetime
- 1988-12-28 DE DE3844154A patent/DE3844154A1/de not_active Withdrawn
- 1988-12-28 JP JP63329522A patent/JPH0227591A/ja active Pending
- 1988-12-28 GB GB8830287A patent/GB2220537B/en not_active Expired - Lifetime
- 1988-12-30 NL NL8803222A patent/NL8803222A/nl not_active Application Discontinuation
- 1988-12-30 FR FR8817479A patent/FR2632439A1/fr active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5948889A (ja) *	1982-09-10	1984-03-21	Hitachi Ltd	Ｍｏｓ記憶装置
JPS63164092A (ja) *	1986-12-26	1988-07-07	Toshiba Corp	半導体記憶装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6088270A (en) *	1992-11-12	2000-07-11	United Memories, Inc.	Sense amplifier with local write drivers
US6208574B1 (en)	1992-11-12	2001-03-27	United Memories, Inc.	Sense amplifier with local column read amplifier and local data write drivers
US6249469B1 (en)	1992-11-12	2001-06-19	United Memories, Inc.	Sense amplifier with local sense drivers and local read amplifiers
US6275432B1 (en)	1992-11-12	2001-08-14	United Memories, Inc.	Method of reading and writing data using local data read and local data write circuits
US5422853A (en) *	1992-11-24	1995-06-06	Oki Electric Industry Co., Ltd.	Sense amplifier control circuit for semiconductor memory

Also Published As

Publication number	Publication date
NL8803222A (nl)	1990-01-02
FR2632439A1 (fr)	1989-12-08
FR2632439B1 (el)	1993-02-26
GB2220537B (en)	1992-05-06
KR900000906A (ko)	1990-01-31
GB2220537A (en)	1990-01-10
DE3844154A1 (de)	1990-01-18
KR910009551B1 (ko)	1991-11-21
GB8830287D0 (en)	1989-02-22
US4948993A (en)	1990-08-14

Publication	Publication Date	Title
US7486540B2 (en)	2009-02-03	Memory device with improved writing capabilities
KR0122108B1 (ko)	1997-12-05	반도체 메모리 장치의 비트라인 센싱회로 및 그 방법
KR940008296B1 (ko)	1994-09-10	고속 센싱동작을 수행하는 센스앰프
KR20030066440A (ko)	2003-08-09	오버드라이브 방식의 비트선 감지 증폭기를 갖는 반도체메모리 디바이스
JPH0227591A (ja)	1990-01-30	記憶装置のセンスアンプ分割制御回路
JP3913956B2 (ja)	2007-05-09	半導体記憶装置
JPH0562467A (ja)	1993-03-12	センスアンプ駆動回路
JPH0568798B2 (el)	1993-09-29
US20120188836A1 (en)	2012-07-26	Semiconductor memory apparatus
JPH0518198B2 (el)	1993-03-11
KR100587639B1 (ko)	2006-06-08	계층화된 출력배선의 감지증폭기 드라이버를 구비한반도체 메모리 소자
JPH0430388A (ja)	1992-02-03	半導体記憶回路
JP2845212B2 (ja)	1999-01-13	半導体記憶装置
US6930940B2 (en)	2005-08-16	Semiconductor memory device with read and/or write column select gate
US5666306A (en)	1997-09-09	Multiplication of storage capacitance in memory cells by using the Miller effect
JPH0468716B2 (el)	1992-11-04
US7719911B2 (en)	2010-05-18	Semiconductor storage device
JP2000036194A (ja)	2000-02-02	半導体記憶装置
US7697354B2 (en)	2010-04-13	Integrated circuit memory device responsive to word line/bit line short-circuit
JPH0217874B2 (el)	1990-04-23
JPH0793010B2 (ja)	1995-10-09	メモリ回路
JPS599735A (ja)	1984-01-19	クロツク発生回路
JPS6161479B2 (el)	1986-12-25
JPS62146489A (ja)	1987-06-30	ダイナミツクメモリ
US5155702A (en)	1992-10-13	Semiconductor memory device