JPH0227591A - 記憶装置のセンスアンプ分割制御回路 - Google Patents
記憶装置のセンスアンプ分割制御回路Info
- Publication number
- JPH0227591A JPH0227591A JP63329522A JP32952288A JPH0227591A JP H0227591 A JPH0227591 A JP H0227591A JP 63329522 A JP63329522 A JP 63329522A JP 32952288 A JP32952288 A JP 32952288A JP H0227591 A JPH0227591 A JP H0227591A
- Authority
- JP
- Japan
- Prior art keywords
- sensing
- sense amplifier
- sensing control
- sense amplifiers
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical group O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR88-6797 | 1988-06-07 | ||
KR1019880006797A KR910009551B1 (ko) | 1988-06-07 | 1988-06-07 | 메모리장치의 센스앰프 분할 제어회로 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0227591A true JPH0227591A (ja) | 1990-01-30 |
Family
ID=19275005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63329522A Pending JPH0227591A (ja) | 1988-06-07 | 1988-12-28 | 記憶装置のセンスアンプ分割制御回路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4948993A (el) |
JP (1) | JPH0227591A (el) |
KR (1) | KR910009551B1 (el) |
DE (1) | DE3844154A1 (el) |
FR (1) | FR2632439A1 (el) |
GB (1) | GB2220537B (el) |
NL (1) | NL8803222A (el) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422853A (en) * | 1992-11-24 | 1995-06-06 | Oki Electric Industry Co., Ltd. | Sense amplifier control circuit for semiconductor memory |
US6088270A (en) * | 1992-11-12 | 2000-07-11 | United Memories, Inc. | Sense amplifier with local write drivers |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3260393B2 (ja) * | 1991-02-01 | 2002-02-25 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
DE69028625T2 (de) * | 1990-06-12 | 1997-01-30 | Fujitsu Ltd | Dynamische Speichereinrichtung mit wahlfreiem Zugriff |
JP3319610B2 (ja) * | 1991-11-22 | 2002-09-03 | 日本テキサス・インスツルメンツ株式会社 | 信号伝達回路 |
JP2672721B2 (ja) * | 1991-05-27 | 1997-11-05 | 株式会社東芝 | センスアンプ回路 |
US5901088A (en) * | 1998-02-11 | 1999-05-04 | Ramtron International Corporation | Sense amplifier utilizing a balancing resistor |
US6026042A (en) * | 1998-04-10 | 2000-02-15 | Micron Technology, Inc. | Method and apparatus for enhancing the performance of semiconductor memory devices |
KR100298443B1 (ko) * | 1998-08-18 | 2001-08-07 | 김영환 | 센스앰프제어회로 |
JP3453552B2 (ja) | 2000-08-31 | 2003-10-06 | 松下電器産業株式会社 | 半導体記憶装置 |
JP2002208277A (ja) | 2001-01-05 | 2002-07-26 | Toshiba Corp | 半導体記憶装置のセンスアンプ制御回路 |
KR101391355B1 (ko) * | 2007-07-23 | 2014-05-02 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 데이터 감지 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948889A (ja) * | 1982-09-10 | 1984-03-21 | Hitachi Ltd | Mos記憶装置 |
JPS63164092A (ja) * | 1986-12-26 | 1988-07-07 | Toshiba Corp | 半導体記憶装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4031522A (en) * | 1975-07-10 | 1977-06-21 | Burroughs Corporation | Ultra high sensitivity sense amplifier for memories employing single transistor cells |
US4533843A (en) * | 1978-09-07 | 1985-08-06 | Texas Instruments Incorporated | High performance dynamic sense amplifier with voltage boost for row address lines |
US4543501A (en) * | 1978-09-22 | 1985-09-24 | Texas Instruments Incorporated | High performance dynamic sense amplifier with dual channel grounding transistor |
US4543500A (en) * | 1978-09-22 | 1985-09-24 | Texas Instruments Incorporated | High performance dynamic sense amplifier voltage boost for row address lines |
JPS5819793A (ja) * | 1981-07-27 | 1983-02-04 | Toshiba Corp | 半導体メモリ装置 |
JPS592365A (ja) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | ダイナミツク型半導体記憶装置 |
JPH0746500B2 (ja) * | 1984-03-19 | 1995-05-17 | 株式会社日立製作所 | 集積回路メモリ装置 |
US4604732A (en) * | 1984-05-29 | 1986-08-05 | Thomson Components-Mostek Corporation | Power supply dependent voltage reference circuit |
JPS6177198A (ja) * | 1984-09-21 | 1986-04-19 | Toshiba Corp | 半導体記憶装置 |
JPS62270098A (ja) * | 1986-05-19 | 1987-11-24 | Toshiba Corp | 半導体センス回路 |
-
1988
- 1988-06-07 KR KR1019880006797A patent/KR910009551B1/ko not_active IP Right Cessation
- 1988-12-27 US US07/290,741 patent/US4948993A/en not_active Expired - Lifetime
- 1988-12-28 DE DE3844154A patent/DE3844154A1/de not_active Withdrawn
- 1988-12-28 JP JP63329522A patent/JPH0227591A/ja active Pending
- 1988-12-28 GB GB8830287A patent/GB2220537B/en not_active Expired - Lifetime
- 1988-12-30 NL NL8803222A patent/NL8803222A/nl not_active Application Discontinuation
- 1988-12-30 FR FR8817479A patent/FR2632439A1/fr active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5948889A (ja) * | 1982-09-10 | 1984-03-21 | Hitachi Ltd | Mos記憶装置 |
JPS63164092A (ja) * | 1986-12-26 | 1988-07-07 | Toshiba Corp | 半導体記憶装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6088270A (en) * | 1992-11-12 | 2000-07-11 | United Memories, Inc. | Sense amplifier with local write drivers |
US6208574B1 (en) | 1992-11-12 | 2001-03-27 | United Memories, Inc. | Sense amplifier with local column read amplifier and local data write drivers |
US6249469B1 (en) | 1992-11-12 | 2001-06-19 | United Memories, Inc. | Sense amplifier with local sense drivers and local read amplifiers |
US6275432B1 (en) | 1992-11-12 | 2001-08-14 | United Memories, Inc. | Method of reading and writing data using local data read and local data write circuits |
US5422853A (en) * | 1992-11-24 | 1995-06-06 | Oki Electric Industry Co., Ltd. | Sense amplifier control circuit for semiconductor memory |
Also Published As
Publication number | Publication date |
---|---|
NL8803222A (nl) | 1990-01-02 |
FR2632439A1 (fr) | 1989-12-08 |
FR2632439B1 (el) | 1993-02-26 |
GB2220537B (en) | 1992-05-06 |
KR900000906A (ko) | 1990-01-31 |
GB2220537A (en) | 1990-01-10 |
DE3844154A1 (de) | 1990-01-18 |
KR910009551B1 (ko) | 1991-11-21 |
GB8830287D0 (en) | 1989-02-22 |
US4948993A (en) | 1990-08-14 |
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