JP7195306B2 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- JP7195306B2 JP7195306B2 JP2020510414A JP2020510414A JP7195306B2 JP 7195306 B2 JP7195306 B2 JP 7195306B2 JP 2020510414 A JP2020510414 A JP 2020510414A JP 2020510414 A JP2020510414 A JP 2020510414A JP 7195306 B2 JP7195306 B2 JP 7195306B2
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- 239000004065 semiconductor Substances 0.000 title claims description 158
- 150000004767 nitrides Chemical class 0.000 title claims description 144
- 230000002093 peripheral effect Effects 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 60
- 230000000149 penetrating effect Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 259
- 230000004048 modification Effects 0.000 description 35
- 238000012986 modification Methods 0.000 description 35
- 230000005533 two-dimensional electron gas Effects 0.000 description 22
- 229910002601 GaN Inorganic materials 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Description
縦型の電界効果トランジスタでは、ドレイン電極と、ゲート電極及びソース電極とが基板を挟んで離れているので、ドレイン-ゲート間、及び、ドレイン-ソース間の各々のリーク電流は低くなりやすい。しかしながら、基板の最外周部では、電界集中が発生し、リーク電流が発生しやすい。具体的には、基板の最外周部においても、再成長層内に二次元電子ガスが存在しているので、電界効果トランジスタの最外周部の端面及び二次元電子ガスを介して、ドレイン-ゲート間のリーク電流が発生しやすい。
[構成]
まず、実施の形態1に係る窒化物半導体装置の構成について、図1及び図2を用いて説明する。
続いて、以上のように構成された窒化物半導体装置10のオフリーク特性について、図5を用いて説明する。図5は、本実施の形態に係る窒化物半導体装置10のオフリーク特性を示す図である。図5において、横軸は、ドレイン-ソース間に印加される電圧を表し、縦軸は、窒化物半導体装置10がオフ状態である場合のドレイン電極36に流れるドレイン電流を表している。
続いて、本実施の形態の変形例について説明する。以下の説明において、実施の形態1との相違点を中心に説明し、共通点の説明を省略する。
まず、変形例1について説明する。実施の形態では、電位固定電極40の電位をソース電極34と同じにする例を説明したが、本変形例では、電位固定電極40の電位をソース電極34と異ならせることができる。
次に、変形例2について説明する。本変形例では、変形例1と同様に、電位固定電極40の電位をソース電極34と異ならせることができる。
次に、変形例3について説明する。実施の形態1では、電位固定電極40が最外周部48の全周に亘って途切れることなく設けられている例を説明したが、本変形例では、電位固定電極40が複数に分割されて設けられている。
次に、変形例4について説明する。実施の形態1では、複数のソース電極34の各々が平面視に置いてゲート開口部22に囲まれている例を説明したが、本変形例では、複数のソース電極34のうち少なくとも1つのソース電極34は、ゲート開口部22に囲まれていない。つまり、本変形例では、ゲート開口部22の形状が実施の形態1と相違している。
続いて、実施の形態2について説明する。以下の説明において、実施の形態1との相違点を中心に説明し、共通点の説明を省略する。
以上、1つ又は複数の態様に係る窒化物半導体装置について、実施の形態に基づいて説明したが、本開示は、これらの実施の形態に限定されるものではない。本開示の主旨を逸脱しない限り、当業者が思いつく各種変形を本実施の形態に施したもの、及び、異なる実施の形態における構成要素を組み合わせて構築される形態も、本開示の範囲内に含まれる。
12 基板
12a、28a 周縁
12b 第1の主面
12c 第2の主面
14 ドリフト層
16 第1の下地層
18 第2の下地層
20 第3の下地層
22、422 ゲート開口部
22a、32a、38a 底部
22b、32b、38b 側壁部
24 電子走行層
26 電子供給層
28 閾値制御層
30 ゲート電極
32 ソース開口部
34 ソース電極
36 ドレイン電極
38 外周開口部
40、340 電位固定電極
42 ゲート電極パッド
44、144、244 ソース電極パッド
46 二次元電子ガス
48 最外周部
50 層間絶縁層
52、54、154、254 コンタクトホール
145、245 電位固定電極パッド
556 メサ分離開口部
658 高抵抗領域
Claims (7)
- 互いに背向する第1の主面及び第2の主面を有する基板と、
前記第1の主面の上方に設けられた、第1の導電型を有する第1の窒化物半導体層と、
前記第1の窒化物半導体層の上方に設けられた、前記第1の導電型とは異なる第2の導電型を有する第2の窒化物半導体層と、
前記第2の窒化物半導体層を貫通し、前記第1の窒化物半導体層にまで達する第1の開口部と、
前記第2の窒化物半導体層の上方に、及び、前記第1の開口部の内面に沿って、前記基板側から順に設けられた電子走行層及び電子供給層と、
前記電子供給層の上方で、かつ、前記第1の開口部を覆うように設けられたゲート電極と、
前記ゲート電極から離れた位置において、前記電子供給層及び前記電子走行層を貫通し、前記第2の窒化物半導体層にまで達する第2の開口部と、
前記第2の開口部に設けられ、前記第2の窒化物半導体層と接続されたソース電極と、
前記第2の主面側に設けられたドレイン電極と、
前記基板の平面視における最外周部において、前記電子供給層及び前記電子走行層を貫通し、前記第2の窒化物半導体層にまで達する第3の開口部と、
前記第3の開口部に設けられ、前記第2の窒化物半導体層と接続され、かつ、前記電子走行層及び前記電子供給層に接触しない電位固定電極とを備え、
前記電位固定電極は、前記第3の開口部の側壁部から離れて設けられている
窒化物半導体装置。 - 前記基板を平面視した場合に、前記第3の開口部は、前記最外周部の全周に亘って環状に設けられている
請求項1に記載の窒化物半導体装置。 - 前記基板を平面視した場合に、前記電位固定電極は、前記最外周部の全周に亘って環状に設けられている
請求項2に記載の窒化物半導体装置。 - 前記基板の平面視形状は、矩形であり、
前記基板を平面視した場合に、前記電位固定電極は、前記基板の辺毎に、島状に設けられている
請求項1又は2に記載の窒化物半導体装置。 - 前記電位固定電極は、導電性の配線層を介して前記ソース電極と電気的に接続されている
請求項1~4のいずれか1項に記載の窒化物半導体装置。 - さらに、
前記最外周部において、前記電位固定電極より外側に設けられた、前記第2の窒化物半導体層を貫通し、前記第1の窒化物半導体層にまで達する第4の開口部を備える
請求項1~5のいずれか1項に記載の窒化物半導体装置。 - さらに、
前記第4の開口部の底面に設けられた、前記第1の窒化物半導体層よりも抵抗が高い高抵抗領域を有する
請求項6に記載の窒化物半導体装置。
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