JP5466665B2 - 液晶表示装置用薄膜トランジスタ基板及びその製造方法 - Google Patents
液晶表示装置用薄膜トランジスタ基板及びその製造方法 Download PDFInfo
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- JP5466665B2 JP5466665B2 JP2011090187A JP2011090187A JP5466665B2 JP 5466665 B2 JP5466665 B2 JP 5466665B2 JP 2011090187 A JP2011090187 A JP 2011090187A JP 2011090187 A JP2011090187 A JP 2011090187A JP 5466665 B2 JP5466665 B2 JP 5466665B2
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Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Optical Filters (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
前記薄膜トランジスタの半導体層はバンドギャップが互いに異なる二重層構造の非晶質ケイ素膜からなることを特徴とする。
(参考例1)
まず、図1乃至図4に基づいて参考例による薄膜トランジスタ基板の構造について詳細に説明する。
(第2参考例)
このような方法は、前述のように、有機絶縁膜40を形成した以後の工程を5枚のマスクを使用する製造方法に適用したが、4枚のマスクを使用する液晶表示装置用薄膜トランジスタ基板の製造方法でも同一に適用することができる。これについて図面に基づいて詳細に説明する。ここでは、ゲートパッドをゲート配線と同一の層で形成することにする。
(第1実施例)
本発明の製造方法では薄膜トランジスタよりカラーフィルターを先に形成し、カラーフィルターの下部にデータ線を形成してブラックマトリックスとして活用することによって開口率を確保すると共に向上した歩留まりと十分に低い寄生容量を確保する。また、部分的に異なる厚さを有する感光膜パターンをエッチングマスクとして使用して半導体パターンと接触孔を共に形成することで製造工程を単純化する。
(第2実施例)
前述の第1実施例では光遮断膜91及び間隔維持材130が薄膜トランジスタに入射する光を遮断するように形成されているが、ゲート配線52、56の周辺部まで延びて画素の間から漏洩する光を完全に遮断するように多様な構造を有することができる。これについて詳細に説明する。
(第3実施例)
前述のように、第1実施例による液晶表示装置用薄膜トランジスタ基板の製造方法では島形態の半導体層70と接触孔61、64、68を同時に形成したが、接触孔と半導体層を異なる段階で形成することもできる。これについて詳細に説明する。
(第4実施例)
このような問題点を解決するために、第1の方法としては、カラーフィルターが損傷しないように250℃程度の低温で下部絶縁膜を形成し、半導体層と接する上部は300℃程度で上部絶縁膜を形成しカラーフィルターの顔料粒子が昇華されないように5分以下の時間のみ積層して二重構造のゲート絶縁膜を形成する。このような本発明の第4実施例による薄膜トランジスタ基板及び製造方法について図75及び図76を参照して具体的に説明する。
(第5実施例)
また、前述の問題点を解決するための第2の方法としては、低温絶縁膜を使用してゲート絶縁膜を形成し、薄膜トランジスタの特性が低下することを防止するためにゲート絶縁膜の上に高いバンドギャップ(band gap)を有する半導体層と相対的に低いバンドギャップを有する半導体層からなる二重層構造の半導体層を形成する。このような本発明の第5実施例による薄膜トランジスタ基板及び製造方法について図77及び図78を参照して具体的に説明する。
10 下部絶縁基板
22 ブラックマトリックス
25 共通信号線
26 ゲートパッド
27 共通パッド
29、39 整列キー
31、32、33 カラーフィルター
40 有機絶縁膜
42、46、102、106、108 接触孔
52 ゲート線
56 ゲート電極
58 維持電極
60 ゲート絶縁膜
70 半導体層
82、112 画素電極
80、85、86 抵抗性接触層
92 データ線
95 ソース電極
96 ドレーン電極
98 データパッド
100 保護膜
116 補助ゲートパッド
118 補助データパッド
500 シャドーマスク
Claims (12)
- 絶縁基板の上に形成されているデータ線を含むデータ配線と、
前記絶縁基板の上部の画素に形成されている赤、緑、青のカラーフィルターと、
前記データ配線及び前記カラーフィルターを覆う絶縁膜と、
前記絶縁膜の上部に形成されており、前記データ線と交差して前記画素を定義するゲート線及び前記ゲート線に連結されたゲート電極を含むゲート配線と、
前記絶縁膜の上部に形成されて前記ゲート配線を覆っており前記絶縁膜と共に前記データ線の一部を露出させる第1接触孔を有するゲート絶縁膜と、
前記カラーフィルターの上部であって、前記ゲート電極の前記ゲート絶縁膜の上部に形成されている半導体層パターンと、
前記半導体層パターンの上部に形成されており、前記第1接触孔を通じて前記データ線と連結されているソース用電極と前記ゲート電極を中心にして前記ソース用電極と分離されて対向するドレーン用電極と前記ドレーン用電極と連結されており前記画素に形成されている画素電極とを含む画素配線と、
前記ゲート線に連結されて外部から信号の伝達を受けるゲートパッドと、
前記データ配線と同一の層で形成されている第1補助ゲートパッドと、
前記データ線に連結されて外部から信号の伝達を受けるデータパッドと、
を含み、
前記絶縁膜は前記第1補助ゲートパッドを露出させる第2接触孔を有しており、
前記ゲートパッドは前記第2接触孔を通じて前記第1補助ゲートパッドと連結されており、
前記ゲート絶縁膜及び前記絶縁膜は前記第1補助ゲートパッドを露出させる第3接触孔と、前記データパッドを露出させる第4接触孔とを有しており、
前記第3接触孔を通じて前記第1補助ゲートパッドと連結され前記画素電極と同一の層で形成されている第2補助ゲートパッドと、
前記第4接触孔を通じて前記データパッドと連結され前記画素電極と同一の層で形成されている補助データパッドとをさらに含み、
を含み、前記データ配線及びゲート配線が光を遮断するブラックマトリックスとして機能する、液晶表示装置用薄膜トランジスタ基板。 - 前記赤、緑、青のカラーフィルターの端部は、前記データ線の端部を覆っていることを特徴とする請求項1に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記絶縁膜は有機絶縁物質からなることを特徴とする請求項1に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記データ配線と同一の層で形成されており、前記半導体層パターンまたは前記ゲート配線に対応する部分に位置する光遮断膜をさらに含むことを特徴とする請求項1に記載の液晶表示装置用薄膜トランジスタ基板。
- 少なくとも前記ソース用電極と前記ドレーン用電極との間の前記半導体層パターンの上部に形成されている保護膜をさらに含むことを特徴とする請求項1に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記保護膜の上部に形成されている間隔維持材をさらに含むことを特徴とする請求項5に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記間隔維持材は感光性有機絶縁物質からなることを特徴とする請求項6に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記間隔維持材は黒い色顔料を含むことを特徴とする請求項7に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記半導体層パターンは二重層構造で形成されていることを特徴とする請求項1に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記二重層構造の半導体層パターンは、第1非晶質ケイ素膜と、前記第1非晶質ケイ素膜の上に位置し第1非晶質ケイ素膜のバンドギャップより低い第2非晶質ケイ素膜とを含むことを特徴とする請求項9に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記ゲート絶縁膜は、下部ゲート絶縁膜及び上部ゲート絶縁膜を含む二重層構造で形成されていることを特徴とする請求項1に記載の液晶表示装置用薄膜トランジスタ基板。
- 前記上部及び下部ゲート絶縁膜は、有機絶縁膜、非晶質酸化ケイ素、非晶質窒化ケイ素のうちの一つからなることを特徴とする請求項11に記載の液晶表示装置用薄膜トランジスタ基板。
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KR1019990062915A KR20010060519A (ko) | 1999-12-27 | 1999-12-27 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
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-
2000
- 2000-09-29 CN CNB001324004A patent/CN1195243C/zh not_active Expired - Lifetime
- 2000-10-02 JP JP2000302953A patent/JP2001166338A/ja active Pending
- 2000-10-02 US US09/676,813 patent/US6674495B1/en not_active Expired - Lifetime
-
2003
- 2003-09-12 US US10/660,749 patent/US7190421B2/en not_active Expired - Lifetime
- 2003-09-12 US US10/660,779 patent/US7220991B2/en not_active Expired - Lifetime
-
2006
- 2006-06-19 US US11/455,367 patent/US7675062B2/en not_active Expired - Fee Related
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2011
- 2011-04-14 JP JP2011090187A patent/JP5466665B2/ja not_active Expired - Lifetime
Also Published As
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US6674495B1 (en) | 2004-01-06 |
US7220991B2 (en) | 2007-05-22 |
US20040046905A1 (en) | 2004-03-11 |
JP2011186484A (ja) | 2011-09-22 |
JP2001166338A (ja) | 2001-06-22 |
CN1195243C (zh) | 2005-03-30 |
US20040051103A1 (en) | 2004-03-18 |
US7675062B2 (en) | 2010-03-09 |
CN1290922A (zh) | 2001-04-11 |
US20060231846A1 (en) | 2006-10-19 |
US7190421B2 (en) | 2007-03-13 |
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