JP5352554B2 - 半導体装置及び電子機器 - Google Patents
半導体装置及び電子機器 Download PDFInfo
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- JP5352554B2 JP5352554B2 JP2010204008A JP2010204008A JP5352554B2 JP 5352554 B2 JP5352554 B2 JP 5352554B2 JP 2010204008 A JP2010204008 A JP 2010204008A JP 2010204008 A JP2010204008 A JP 2010204008A JP 5352554 B2 JP5352554 B2 JP 5352554B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Description
条件1と条件2と条件3で電流値及び上昇レートによる廻り込み量Xの比較を行い、条件2と条件4で定電圧時間の有無による廻り込み量Xの比較を行った。
なお、ここではドライバー回路を構成する基本回路としてCMOS回路を示し、画素マトリクス回路のTFTとしてはダブルゲート構造のTFTを示している。
勿論、ダブルゲート構造に限らずトリプルゲート構造やシングルゲート構造などとしても良い。
を行っても良い。(図5(B))
これは上記回路群の場合、ソース領域とドレイン領域の機能が変わらず、キャリア(電子)の移動する方向が一定だからである。但し、必要に応じてチャネル形成領域の両側にLov領域を配置することもできる。
さらに、本実施例のように画素TFT上に形成される遮蔽膜を保持容量の一方の電極とすることで、アクティブマトリクス型液晶表示装置の画像表示部の開口率を向上させることができた。
ソース信号線側駆動回路1301は、シフトレジスタ回路1302、レベルシフタ回路1303、バッファ回路1304、サンプリング回路1305を備えている。また、ゲート信号線側駆動回路(A)1307は、シフトレジスタ回路1308、レベルシフタ回路1309、バッファ回路1310を備えている。ゲート信号線側駆動回路(B)1311も同様な構成である。
の結晶性を改善するための工程について説明する。まず、実施例8〜10のいずれかの工程に従って活性層を形成する。但し、本実施例ではTFTを形成する基板として800〜1150℃の温度に耐えうる基板を用いる材料を用いる必要がある。そのような基板としては、石英基板、金属基板、シリコン基板、セラミックス基板(セラミックスガラス基板も含む)が挙げられる。
によってスピン密度の差となって現れる。現状では本実施例の作製工程に従って作製された結晶質シリコン膜のスピン密度は少なくとも 5×1017spins/cm3以下(好ましくは 3×1017spins/cm3以下)であることが判明している。ただし、この測定値は現存する測定装置の検出限界に近いので、実際のスピン密度はさらに低いと予想される。
本実施例の活性層を用いたTFTは、MOSFETに匹敵する電気特性を示した。本出願人が試作したTFT(但し、活性層の膜厚は30nm、ゲート絶縁膜の膜厚は100nm)からは次に示す様なデータが得られている。
(2)TFTの動作速度の指標となる電界効果移動度(μFE)が、Nチャネル型TFTで 200〜650cm2/Vs (代表的には 300〜500cm2/Vs )、Pチャネル型TFTで100〜300cm2/Vs(代表的には 150〜200cm2/Vs)と大きい。
(3)TFTの駆動電圧の指標となるしきい値電圧(Vth)が、Nチャネル型TFTで-0.5〜1.5 V、Pチャネル型TFTで-1.5〜0.5 Vと小さい。
の工程(pチャネル型TFTのゲート配線とp++領域の形成工程)を行わずに、図4(B)と同様にnチャネル型TFTのゲート配線およびその他の接続配線を形成する。なお、図21(A)では図4(B)と同一の符号を用いている。但し、pチャネル型TFTとなる領域に関しては、レジストマスク2101を形成して、後にpチャネル型TFTのゲート配線となる導電膜2102を残す。
具体的には、逆スタガ型TFTに用いた場合を図23に示す。本発明の逆スタガ型TFTの場合、実施例1のトップゲート型TFTとはゲート配線と活性層の位置関係が異なる以外、特に大きく異なることはない。従って、本実施例では、図5(C)に示した構造と大きく異なる点に注目して説明を行い、その他の部分は図5(C)と同一であるため説明を省略する。実施例1と同様にして、遮蔽膜とその陽極酸化膜と、画素電極からなる保持容量が形成されている。この陽極酸化膜は発明の実施の形態に示した方法で形成する。
に示した。本実施例においては、発明の実施の形態に示した陽極酸化方法により電源線90a、90bの表面に陽極酸化膜を形成し、85で示した領域で保持容量を形成している。
において、4010は基板、4011は画素部、4012はソース側駆動回路、4013はゲート側駆動回路であり、それぞれの駆動回路は配線4014〜4016を経てFPC4017に至り、外部機器へと接続される。
そして、画素電極4027を形成したら、絶縁膜4028を形成し、画素電極4027上に開口部を形成する。
勿論、単色発光のEL表示装置とすることもできる。
、エポキシ樹脂、シリコーン樹脂、PVB(ポリビニルブチラル)またはEVA(エチレンビニルアセテート)を用いることができる。この充填材6004の内部に乾燥剤を設けておくと、吸湿効果を保持できるので好ましい。
板、PVF(ポリビニルフルオライド)フィルム、マイラーフィルム、ポリエステルフィルムまたはアクリルフィルムを用いることができる。なお、充填材6004としてPVBやEVAを用いる場合、数十μmのアルミニウムホイルをPVFフィルムやマイラーフィルムで挟んだ構造のシートを用いることが好ましい。
即ち、ドライバー回路と画素マトリクス回路を同じ電源電圧で動作させることが可能となり、液晶表示装置全体の低消費電力化を図ることができる。
本発明は表示部2402やその他の信号制御回路に適用することができる。
Claims (6)
- 画素領域に、複数の画素トランジスタと、
前記画素トランジスタに電気的に接続されるソース電極及びドレイン電極と、
前記画素トランジスタ、前記ソース電極及び前記ドレイン電極上の有機樹脂膜と、
前記有機樹脂膜上の導電膜と、
前記導電膜上の絶縁膜と、
前記絶縁膜上の画素電極と、を有し、
前記導電膜は、第1の開口部を有し、
前記有機樹脂膜は、第2の開口部を有し、
前記第2の開口部は、前記第1の開口部の内側に設けられ、
前記画素電極は、前記第1の開口部及び前記第2の開口部を介して前記ソース電極又は前記ドレイン電極の一方に電気的に接続され、
前記導電膜は、配線に前記画素領域の外側で電気的に接続された接続配線と、前記画素領域の外側で前記絶縁膜を介して重なる領域を有し、
前記配線は、交流駆動することで、前記導電膜に固定電位を与えることが出来る機能を有し、
前記画素電極と前記導電膜とは前記絶縁膜を介して一部重なることで保持容量を構成することを特徴とする半導体装置。 - 請求項1において、
前記画素トランジスタと前記有機樹脂膜との間に、カラーフィルタを有し、
前記カラーフィルタは、第3の開口部を有し、
前記第2の開口部は、前記第3の開口部の内側に設けられていることを特徴とする半導体装置。 - 請求項2において、
前記画素トランジスタと前記カラーフィルタとの間に、有機樹脂でなる層間絶縁膜を有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一において、
前記画素電極及び前記導電膜と、前記有機樹脂膜との間に、無機絶縁膜を有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一において、
前記有機樹脂膜の表面は、プラズマ処理により改質されていることを特徴とする半導体装置。 - 請求項1乃至5のいずれか一において、
前記絶縁膜及び前記画素電極上に液晶を有し、
前記導電膜は、前記画素トランジスタから前記液晶への電界の進入を遮蔽することを特徴とする半導体装置。
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US7821065B2 (en) * | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
US6680487B1 (en) * | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
JP4298131B2 (ja) | 1999-05-14 | 2009-07-15 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
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US20110095312A1 (en) | 2011-04-28 |
JP2011043830A (ja) | 2011-03-03 |
JP2014056242A (ja) | 2014-03-27 |
US7821065B2 (en) | 2010-10-26 |
US20150008440A1 (en) | 2015-01-08 |
US8445962B2 (en) | 2013-05-21 |
US9153604B2 (en) | 2015-10-06 |
JP5604576B2 (ja) | 2014-10-08 |
JP2014132574A (ja) | 2014-07-17 |
US8847316B2 (en) | 2014-09-30 |
US20130341626A1 (en) | 2013-12-26 |
US20030057419A1 (en) | 2003-03-27 |
JP2012227540A (ja) | 2012-11-15 |
JP5656335B2 (ja) | 2015-01-21 |
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