JP5348862B2 - インダクタ素子 - Google Patents
インダクタ素子 Download PDFInfo
- Publication number
- JP5348862B2 JP5348862B2 JP2007204325A JP2007204325A JP5348862B2 JP 5348862 B2 JP5348862 B2 JP 5348862B2 JP 2007204325 A JP2007204325 A JP 2007204325A JP 2007204325 A JP2007204325 A JP 2007204325A JP 5348862 B2 JP5348862 B2 JP 5348862B2
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- insulating film
- inductor
- semiconductor substrate
- conductive member
- inductor element
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000000149 penetrating effect Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 description 34
- 238000000034 method Methods 0.000 description 28
- 239000003990 capacitor Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000007747 plating Methods 0.000 description 9
- 229910000859 α-Fe Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0046—Printed inductances with a conductive path having a bridge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
- H01F27/323—Insulation between winding turns, between winding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/12—Insulating of windings
- H01F41/122—Insulating between turns or between winding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Of Transformers For General Uses (AREA)
- Coils Or Transformers For Communication (AREA)
Description
図9は、本発明の第1の実施の形態に係るインダクタ素子を備えた高周波モジュールの断面図である。
図22は、本発明の第2の実施の形態に係るインダクタ素子を備えた高周波モジュールの断面図である。図22において、第1の実施の形態で説明した高周波モジュール10(図9参照)と同一構成部分には同一符号を付す。
第1の導電部材121〜123と第2の導電部材124,125との間に半導体基板11が介在することがなくなるため、インダクタ素子110を小型化することができる。
11 半導体基板
11A 上面
11B 下面
12,17,18 絶縁膜
14,15 貫通ビア
18A 面
20,110 インダクタ素子
22,23,28,29,74,76,141,142,144,145,147,148151,152 ビア
25〜27,75,77,143,146,149,153 配線
31,32 パッド
34 チップコンデンサ
35 高周波用半導体チップ
36 CPU用半導体チップ
38 外部接続端子
45,46 貫通孔
47 溝部
51〜54,56,57,91A,156A〜156C,159A 開口部
61,120 インダクタ本体
63,64 配線パターン
66,67 磁性体
71,72 接続部
80 電圧変換モジュール
91,156,159 レジスト膜
93,161 給電層
95 導電体
114〜116 第1の貫通溝
118,119 第2の貫通溝
121〜123 第1の導電部材
121A,122A,123A,124A,125A 第1の接続部
121B,122B,123B,124B,125B 第2の接続部
124,125 第2の導電部材
131〜134 導電部材接続用配線パターン
158 固定用接着シート
W1 幅
Claims (2)
- 半導体基板に形成されたインダクタ素子であって、
一端部から他端部にかけて平面視スパイラル形状とされ、前記一端部から前記他端部に至る全体が前記半導体基板を貫通するように設けられた、導電性を有したインダクタ本体と、
前記インダクタ本体の側面と前記半導体基板との間に設けられた絶縁膜と、
前記インダクタ本体の上下方向にそれぞれ設けられた磁性体と、を有することを特徴とするインダクタ素子。 - 前記半導体基板の一方の面、及び前記半導体基板の一方の面から露出する前記インダクタ本体を覆うように設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられ、前記第2の絶縁膜を介して前記インダクタ本体と接続された配線パターンと、を有し、
前記磁性体の一方は、前記配線パターンの一部を覆うように設けられていることを特徴とする請求項1記載のインダクタ素子。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007204325A JP5348862B2 (ja) | 2007-08-06 | 2007-08-06 | インダクタ素子 |
KR1020080075390A KR101436037B1 (ko) | 2007-08-06 | 2008-08-01 | 인덕터 소자 및 그 제조 방법 |
US12/186,317 US7791446B2 (en) | 2007-08-06 | 2008-08-05 | Inductor device and method of manufacturing the same |
TW097129780A TWI443691B (zh) | 2007-08-06 | 2008-08-06 | 電感裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007204325A JP5348862B2 (ja) | 2007-08-06 | 2007-08-06 | インダクタ素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009043777A JP2009043777A (ja) | 2009-02-26 |
JP2009043777A5 JP2009043777A5 (ja) | 2010-05-20 |
JP5348862B2 true JP5348862B2 (ja) | 2013-11-20 |
Family
ID=40345926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007204325A Active JP5348862B2 (ja) | 2007-08-06 | 2007-08-06 | インダクタ素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7791446B2 (ja) |
JP (1) | JP5348862B2 (ja) |
KR (1) | KR101436037B1 (ja) |
TW (1) | TWI443691B (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7994873B2 (en) * | 2008-09-10 | 2011-08-09 | Advanced Semiconductor Engineering, Inc. | Balun device |
US8049589B2 (en) * | 2008-09-10 | 2011-11-01 | Advanced Semiconductor Engineering, Inc. | Balun circuit manufactured by integrate passive device process |
US8008987B2 (en) * | 2008-09-10 | 2011-08-30 | Advanced Semiconductor Engineering, Inc. | Balun circuit manufactured by integrate passive device process |
US9190201B2 (en) * | 2009-03-04 | 2015-11-17 | Qualcomm Incorporated | Magnetic film enhanced inductor |
JP5705857B2 (ja) * | 2009-09-16 | 2015-04-22 | マラディン テクノロジーズ リミテッドMaradin Technologies Ltd. | 微小コイル装置およびその製作方法 |
KR101179386B1 (ko) | 2010-04-08 | 2012-09-03 | 성균관대학교산학협력단 | 패키지 기판의 제조방법 |
US8664745B2 (en) * | 2010-07-20 | 2014-03-04 | Triune Ip Llc | Integrated inductor |
US9287344B2 (en) * | 2010-08-23 | 2016-03-15 | The Hong Kong University Of Science And Technology | Monolithic magnetic induction device |
US8470612B2 (en) | 2010-10-07 | 2013-06-25 | Infineon Technologies Ag | Integrated circuits with magnetic core inductors and methods of fabrications thereof |
CN103377795B (zh) * | 2012-04-24 | 2016-01-27 | 乾坤科技股份有限公司 | 电磁器件及其制作方法 |
US8963671B2 (en) * | 2012-08-31 | 2015-02-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor transformer device and method for manufacturing the same |
JP6115147B2 (ja) | 2013-01-22 | 2017-04-19 | 富士通株式会社 | 配線基板及びその設計方法 |
US9767957B2 (en) * | 2013-08-12 | 2017-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a tunable three dimensional inductor |
CN105244367A (zh) * | 2014-06-24 | 2016-01-13 | 日月光半导体制造股份有限公司 | 衬底结构及其制造方法 |
KR101662206B1 (ko) | 2014-08-07 | 2016-10-06 | 주식회사 모다이노칩 | 파워 인덕터 |
KR101686989B1 (ko) | 2014-08-07 | 2016-12-19 | 주식회사 모다이노칩 | 파워 인덕터 |
US9607748B2 (en) * | 2014-09-03 | 2017-03-28 | Teledyne Scientific & Imaging, Llc | Micro-fabricated integrated coil and magnetic circuit and method of manufacturing thereof |
KR101681201B1 (ko) * | 2014-09-11 | 2016-12-01 | 주식회사 모다이노칩 | 파워 인덕터 |
JP6557468B2 (ja) * | 2014-12-25 | 2019-08-07 | ローム株式会社 | チップ部品 |
US20170236790A1 (en) * | 2016-02-12 | 2017-08-17 | Semtech Corporation | Semiconductor Device on Leadframe with Integrated Passive Component |
JP6838328B2 (ja) * | 2016-09-15 | 2021-03-03 | 大日本印刷株式会社 | インダクタおよびインダクタの製造方法 |
US11094447B2 (en) | 2017-03-30 | 2021-08-17 | Rohm Co., Ltd. | Chip inductor and method for manufacturing the same |
JP2018174306A (ja) * | 2017-03-30 | 2018-11-08 | ローム株式会社 | チップインダクタおよびその製造方法 |
JP6908112B2 (ja) * | 2017-06-30 | 2021-07-21 | 株式会社村田製作所 | 電子部品モジュール及びその製造方法 |
US10861840B2 (en) * | 2017-08-30 | 2020-12-08 | Advanced Semiconductor Engineering, Inc. | Integrated passive component and method for manufacturing the same |
TWI685858B (zh) * | 2017-12-04 | 2020-02-21 | 希華晶體科技股份有限公司 | 薄型化扼流器的量產方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0729732A (ja) * | 1993-07-09 | 1995-01-31 | Fuji Electric Co Ltd | 薄膜磁気素子 |
JPH0897375A (ja) * | 1994-07-26 | 1996-04-12 | Toshiba Corp | マイクロ波集積回路装置及びその製造方法 |
JPH0963847A (ja) * | 1995-08-25 | 1997-03-07 | Nec Corp | インダクタ素子及びその製造方法 |
JPH11251143A (ja) * | 1998-03-02 | 1999-09-17 | Toshiba Corp | 平面インダクタおよびその製造方法および平面コイルパターンの形成方法 |
FR2830683A1 (fr) * | 2001-10-10 | 2003-04-11 | St Microelectronics Sa | Realisation d'inductance et de via dans un circuit monolithique |
JP2005079286A (ja) | 2003-08-29 | 2005-03-24 | Canon Inc | インダクタ及びその製造方法 |
JP2006173525A (ja) * | 2004-12-20 | 2006-06-29 | Sanyo Electric Co Ltd | 半導体装置 |
TWI336922B (en) * | 2007-01-12 | 2011-02-01 | Via Tech Inc | Spiral inductor with multi-trace structure |
-
2007
- 2007-08-06 JP JP2007204325A patent/JP5348862B2/ja active Active
-
2008
- 2008-08-01 KR KR1020080075390A patent/KR101436037B1/ko active IP Right Grant
- 2008-08-05 US US12/186,317 patent/US7791446B2/en active Active
- 2008-08-06 TW TW097129780A patent/TWI443691B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200915358A (en) | 2009-04-01 |
TWI443691B (zh) | 2014-07-01 |
KR101436037B1 (ko) | 2014-09-01 |
JP2009043777A (ja) | 2009-02-26 |
US7791446B2 (en) | 2010-09-07 |
KR20090014964A (ko) | 2009-02-11 |
US20090039999A1 (en) | 2009-02-12 |
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