JP5273892B2 - オプトエレクトロニック素子及びその製造方法 - Google Patents
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- 238000004383 yellowing Methods 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
- Lens Barrels (AREA)
- Optical Couplings Of Light Guides (AREA)
- Photovoltaic Devices (AREA)
Description
二及びそれ以上の官能価のエポキシ樹脂 80〜99%
一官能価のエポキシ樹脂
(反応性希釈剤、モノグリシジルエーテル) 0〜10%
(ポリ)ビニルエーテル 0〜20%
脂肪族又は脂環式アルコール 0〜10%
接着促進剤
(有機官能性アルコキシ−シロキサン) 0〜5%
有利にはシリコーン又はアクリレートベースの均展助剤 0〜1%
有利にはシリコーン又はアクリレートベースの脱気剤 0〜1%
UV開始カチオン硬化のための触媒 0.1〜2%。
ビスフェノールAエポキシ封止用樹脂、GY260 88.9ppw
エポキシノボラックD.E.N.438 10.9ppw
Tego−DF48(接着促進剤) 0.4ppw
開始剤UVI6974 1.0ppw
例b)
ビスフェノールAエポキシ封止用樹脂、GY260 88.9pbw
エポキシノボラックD.E.N.438 10.0pbw
BYKA506 0.4pbw
開始剤UVI6974 0.7pbw。
【図面の簡単な説明】
【図1】
本発明による素子の第1実施例の概略断面図である。
【図2a】
本発明による素子の第2実施例の概略断面図である。
【図2b】
本発明による素子の第2実施例の詳細図である。
【符号の説明】
1 発光器又は受光器、 2 導体帯材、 3 ケーシング、 4 傾斜側面、 5 プラスチック層、 6 薄い層(接着剤層)、 7 光学レンズ、 8 構造部(スペーサ)、 9 傾斜部、 10 えぐり部
Claims (17)
- オプトエレクトロニック発信器又は受信器が配置された支持体と、発信器又は受信器の上に被着されかつこれらをカプセル化する透明な層と、透明な層の上に配置された光学部材とを有するオプトエレクトロニック素子において、
前記オプトエレクトロニック素子は前記支持体として切り欠きを備えたケーシングを有しており、前記オプトエレクトロニック発信器又は受信器は前記切り欠き内に配置されており、前記透明な層によって前記切り欠き内にカプセル化されており、
前記光学部材が一成分樹脂からなる接着剤層で透明な層に接着されており、
前記光学部材は接着ギャップが素子の縁部に向かって広がり、かつ接着剤が、縁側にえぐり部を形成するように、光学部材が接合面に傾斜部を有しており、
前記樹脂は、主成分としてのビスフェノールAのジグリシジルエーテルと、カチオンを放出する光開始剤とを有しており、下記の成分から成る、すなわち、
80〜99%の二及びそれ以上の官能価のエポキシ樹脂、
0〜10%の一官能価のエポキシ樹脂、
0〜20%のビニルエーテル、
0〜10%の脂肪族又は脂環式アルコール、
0〜5%の接着促進剤、
0〜1%の均展助剤、
0〜1%の脱気剤、
0.1〜5%のカチオン開始される硬化のための光開始剤
から成る
ことを特徴とするオプトエレクトロニック素子。
- 接着剤層がUV又は光開始カチオン硬化されるエポキシ樹脂である、請求項1記載の素子。
- 接着剤層が100℃よりも高いガラス転移温度を有する、請求項1又は2記載の素子。
- 接着剤層が透明な層に光学的に適合されている、請求項1から3までのいずれか1項記載の素子。
- 透明な層及び光学部材がガラス、ポリアクリレート、ポリウレタン又はエポキシ樹脂成形材料からなる、請求項1から4までのいずれか1項記載の素子。
- 光学部材が接合面に規定された粗さ又は波形部を有する、請求項1から5までのいずれか1項記載の素子。
- 光学部材の接合側にかみ合い部が形成されている、請求項1から6までのいずれか1項記載の素子。
- かみ合い部が、窪み又は突起により形成されている、請求項7記載の素子。
- かみ合い部が、光学部材に成形されたピン又はネップ状構造の形で形成されている、請求項8記載の素子。
- 光学部材と透明な層の間に間隔保持部が配置されている、請求項1から8までのいずれか1項記載の素子。
- 間隔保持部が光学部材に形成されている、請求項10記載の素子。
- 光学部材は、エポキシ樹脂受け入れのためのリザーバとして接合面に傾斜部を有する鏡又はレンズである、請求項1から11までのいずれか1項記載の素子。
- 自動車分野用のSMD可能なオプトエレクトロニック素子である、請求項1から12までのいずれか1項記載の素子。
- 切り欠きを備えたケーシングと前記切り欠き内にオプトエレクトロニック発信器又は受信器とを有するオプトエレクトロニック素子の透明な部分が位置的に正確に接着された、オプトエレクトロニック素子を製造する方法において、
接着すべき一方の透明な部分の表面にカチオン開始硬化性エポキシ樹脂の薄い樹脂層を被着するステップと、
前記樹脂層に他方の透明な部分を載せかつ位置決めするステップと、
前記樹脂層の硬化開始のためにUV又は光ビームを照射するステップと、
前記樹脂層を完全に硬化させるステップと
有し、
前記他方の透明な部分は、接着ギャップが縁部に向かって広がり、かつ接着剤が、縁側にえぐり部を形成するように、接合面に傾斜部を有する光学部材であり、
前記一方の透明な部分は透明な層であり、当該透明な層によって前記発信器又は受信器は前記切り欠き内にカプセル化されており、
前記エポキシ樹脂は、主成分としてのビスフェノールAのジグリシジルエーテルと、カチオンを放出する光開始剤とを有しており、下記の成分から成る、すなわち、
80〜99%の二及びそれ以上の官能価のエポキシ樹脂、
0〜10%の一官能価のエポキシ樹脂、
0〜20%のビニルエーテル、
0〜10%の脂肪族又は脂環式アルコール、
0〜5%の接着促進剤、
0〜1%の均展助剤、
0〜1%の脱気剤、
0.1〜5%のカチオン開始される硬化のための光開始剤
から成る
ことを特徴とする製造方法。
- 樹脂層の完全な硬化を高めた温度で行う、請求項14記載の方法。
- UVビームでの照射を100mW/cm2未満の照射電力で5秒未満行う、請求項14又は15記載の方法。
- UVビームでの照射をUVフラッシュによりかつ硬化を120℃より高い温度で行う、請求項16記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10023353A DE10023353A1 (de) | 2000-05-12 | 2000-05-12 | Optoelektronisches Bauelement und Verfahren zur Herstellung |
DE10023353.8 | 2000-05-12 | ||
PCT/DE2001/001820 WO2001086730A2 (de) | 2000-05-12 | 2001-05-11 | Optoelektronisches bauelement und verfahren zur herstellung |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004512670A JP2004512670A (ja) | 2004-04-22 |
JP2004512670A5 JP2004512670A5 (ja) | 2005-01-27 |
JP5273892B2 true JP5273892B2 (ja) | 2013-08-28 |
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JP2001582847A Expired - Lifetime JP5273892B2 (ja) | 2000-05-12 | 2001-05-11 | オプトエレクトロニック素子及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7455461B2 (ja) |
EP (1) | EP1281205B1 (ja) |
JP (1) | JP5273892B2 (ja) |
CN (1) | CN1328798C (ja) |
DE (2) | DE10023353A1 (ja) |
TW (1) | TW525304B (ja) |
WO (1) | WO2001086730A2 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10118231A1 (de) * | 2001-04-11 | 2002-10-17 | Heidenhain Gmbh Dr Johannes | Optoelektronische Baulelmentanordnung und Verfahren zur Herstellun einer oploelektronischen Bauelementanordnung |
DE10129785B4 (de) | 2001-06-20 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
JP2004040031A (ja) * | 2002-07-08 | 2004-02-05 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
WO2004027880A2 (en) * | 2002-09-17 | 2004-04-01 | Koninklijke Philips Electronics N.V. | Camera device, method of manufacturing a camera device, wafer scale package |
EP1659642A4 (en) * | 2003-08-26 | 2011-07-06 | Sumitomo Electric Industries | SEMICONDUCTOR LIGHT EMISSION ELEMENT INSTALLER, LIGHT DIODE CONSTITUATION MEMBER THEREFOR AND LIGHT DIODE THEREWITH |
FR2861217B1 (fr) * | 2003-10-21 | 2006-03-17 | St Microelectronics Sa | Dispositif optique pour boitier semi-conducteur optique et procede de fabrication. |
US7321161B2 (en) * | 2003-12-19 | 2008-01-22 | Philips Lumileds Lighting Company, Llc | LED package assembly with datum reference feature |
DE10361650A1 (de) * | 2003-12-30 | 2005-08-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul und Verfahren zu dessen Herstellung |
US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
US7279346B2 (en) | 2004-03-31 | 2007-10-09 | Cree, Inc. | Method for packaging a light emitting device by one dispense then cure step followed by another |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
WO2006055094A1 (en) | 2004-09-14 | 2006-05-26 | Cdm Optics, Inc. | Low height imaging system and associated methods |
DE102005036520A1 (de) * | 2005-04-26 | 2006-11-09 | Osram Opto Semiconductors Gmbh | Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung |
DE102006020529A1 (de) * | 2005-08-30 | 2007-03-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
MY152857A (en) * | 2005-09-01 | 2014-11-28 | Dominant Opto Tech Sdn Bhd | Surface mount optoelectronic component with lens |
DE102006037737A1 (de) * | 2005-12-09 | 2007-06-14 | Osram Opto Semiconductors Gmbh | Optische Vorrichtung, optoelektronische Vorrichtung und Verfahren zur Herstellung einer optoelektronischen Vorrichtung |
JP4828226B2 (ja) * | 2005-12-28 | 2011-11-30 | 新光電気工業株式会社 | 発光装置及びその製造方法 |
US7785489B2 (en) * | 2005-12-28 | 2010-08-31 | E.I. Du Pont De Nemours And Company | Solvent formulations for solution deposition of organic materials onto low surface energy layers |
AT503027B1 (de) * | 2006-05-08 | 2007-07-15 | Austria Tech & System Tech | Leiterplattenelement mit optoelektronischem bauelement und licht-wellenleiter |
WO2008052327A1 (en) | 2006-10-31 | 2008-05-08 | Tir Technology Lp | Lighting device package |
TWM322104U (en) * | 2007-02-09 | 2007-11-11 | Sin Guang Li Internat Co Ltd | Improved structure of solar cell plate |
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-
2000
- 2000-05-12 DE DE10023353A patent/DE10023353A1/de not_active Withdrawn
-
2001
- 2001-04-24 TW TW090109757A patent/TW525304B/zh not_active IP Right Cessation
- 2001-05-11 JP JP2001582847A patent/JP5273892B2/ja not_active Expired - Lifetime
- 2001-05-11 US US10/275,786 patent/US7455461B2/en not_active Expired - Lifetime
- 2001-05-11 EP EP01947151A patent/EP1281205B1/de not_active Expired - Lifetime
- 2001-05-11 WO PCT/DE2001/001820 patent/WO2001086730A2/de active IP Right Grant
- 2001-05-11 DE DE50113565T patent/DE50113565D1/de not_active Expired - Lifetime
- 2001-05-11 CN CNB018092802A patent/CN1328798C/zh not_active Expired - Lifetime
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DE10023353A1 (de) | 2001-11-29 |
WO2001086730A2 (de) | 2001-11-15 |
TW525304B (en) | 2003-03-21 |
US7455461B2 (en) | 2008-11-25 |
DE50113565D1 (de) | 2008-03-20 |
US20030185526A1 (en) | 2003-10-02 |
WO2001086730A3 (de) | 2002-06-27 |
CN1439175A (zh) | 2003-08-27 |
EP1281205B1 (de) | 2008-02-06 |
EP1281205A2 (de) | 2003-02-05 |
CN1328798C (zh) | 2007-07-25 |
JP2004512670A (ja) | 2004-04-22 |
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