JP5257499B2 - 接着フィルム - Google Patents
接着フィルム Download PDFInfo
- Publication number
- JP5257499B2 JP5257499B2 JP2011229029A JP2011229029A JP5257499B2 JP 5257499 B2 JP5257499 B2 JP 5257499B2 JP 2011229029 A JP2011229029 A JP 2011229029A JP 2011229029 A JP2011229029 A JP 2011229029A JP 5257499 B2 JP5257499 B2 JP 5257499B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- adhesive layer
- semiconductor wafer
- semiconductor
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Wire Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Description
(1)はんだバンプを介して接続を行う方式
(2)金バンプ、ニッケルバンプ、導電樹脂バンプ等のバンプを介して接続を行う方式
X=(A−B)/A×100 (1)
図1〜図8は、第1実施形態に係る半導体デバイスの製造方法を模式的に示す工程図である。
まず、図1(A)及び図2(A)に示されるように、例えばシリコンウェハ等の半導体ウェハ6を吸着ステージ8上に載置する。半導体ウェハ6の回路面6aには、電極パッド7及び位置合わせ用マーク5が形成されている。電極パッド7と位置合わせ用マーク5との間には、絶縁膜20が充填されている。電極パッド7、位置合わせ用マーク5及び絶縁膜20の表面は平坦化されている。電極パッド7上には、絶縁膜20の表面から突出した突出電極4(端子)が設けられている。電極パッド7、位置合わせ用マーク5及び突出電極4により、回路パターンPが形成される。半導体ウェハ6の裏面6b(回路面とは反対側の面)は、吸着ステージ8に接触している。
(カット位置認識工程)
次に、図5(B)及び図5(C)に示されるように、例えばスクライブライン等の切断予定ラインL3に沿って半導体ウェハ6及び接着剤層3を積層体60の厚み方向にダイシング(切断)する。ダイシング工程では、例えば、図5(A)に示される赤外線カメラ14を有するダイサーを用いる。ダイシング工程では、図5(B)に示されるように半導体ウェハ6の一部を切断する第1の工程と、図5(C)に示されるように半導体ウェハ6の残部と接着剤層3とを切断する第2の工程とを実施することが好ましい。これにより、積層体60を切断する際に発生するクラックを低減することができるので、半導体ウェハ6の回路面6aにおける断線を抑制することができる。その結果、半導体デバイスの製造歩留まりを向上させることができる。
次に、図6(A)〜図6(C)に示されるように、ダイシングテープ9と接着剤層3とを剥離させることによって、接着剤層23が付着した半導体チップ26を作製する。
次に、図7に示されるように、接着剤層23が付着した半導体チップ26の回路面26aにおける突出電極4(端子)と、配線基板40の配線12とを位置合わせする。配線基板40は、基板13と、基板13上に設けられた配線12とを備える。位置合わせは、例えばフリップチップボンダを用いて行われる。
次に、図8(A)及び図8(B)に示されるように、配線基板40の配線12と半導体チップ26の突出電極4とが電気的に接続されるように、配線基板40と半導体チップ26とを接着剤層23を介して接続する。これにより、図8(B)に示される半導体デバイス50が製造される。具体的には、例えば、配線基板40と半導体チップ26とを加熱圧着する。加熱圧着後に、DSC(示差走査熱量計)による発熱量から算出される接着剤層23の反応率が50%以上となるように、加熱圧着することが好ましい。これにより、配線12と突出電極4とを電気的及び機械的に接続させることができる。さらに、接続後の冷却収縮時にも配線12と突出電極4との接続を保持することができる。
図9は、第2実施形態に係る半導体デバイスの製造方法の一工程を模式的に示す工程図である。本実施形態では、接着剤層3のサイズが半導体ウェハ6のサイズと略同一になるように予め加工された接着シート52の接着剤層3を回路面6aにラミネートする。その後、セパレータ2を接着剤層3から剥離除去することによって、図2(C)に示されるように、半導体ウェハ6と接着剤層3とを含む積層体70を形成する。その後は第1実施形態と同様にして、図8(B)に示される半導体デバイス50を製造することができる。本実施形態では、第1実施形態と同様の作用効果が得られる。さらに本実施形態の場合、半導体ウェハ6に接着剤層3をラミネートしたあとの切断工程が不要となり、作業効率の向上を図ることができる。
図10は、第3実施形態に係る半導体デバイスの製造方法の一工程を模式的に示す工程図である。本実施形態では、ダイシングテープ9上に接着剤層3を形成する。接着剤層3のサイズは、半導体ウェハ6のサイズと略同一となるように予め加工されている。一方、半導体ウェハ6及びダイシングフレーム10を吸着ステージ8上に載置する。その後、半導体ウェハ6の回路面6aが接着剤層3側を向くように配置して、ローラ1を用いて、接着剤層3が形成されたダイシングテープ9を半導体ウェハ6の回路面6aにラミネートする。これにより、図4(B)に示される構造体が得られる。その後は第1実施形態と同様にして、図8(B)に示される半導体デバイス50を製造することができる。本実施形態では、第1実施形態と同様の作用効果が得られる。また、セパレータ2が不要になると共に半導体デバイス50の製造工程を短縮できる。
熱硬化性樹脂としてエポキシ樹脂YDCN−703(東都化成株式会社製、商品名)12質量部、フェノールアラルキル樹脂XLC−LL(三井化学株式会社製、商品名)19質量部、熱可塑性樹脂としてエポキシ基含有アクリルゴムHTR−860P−3(ナガセケムテックス株式会社製、商品名、質量平均分子量80万)17質量部、及び硬化剤としてマイクロカプセル型硬化剤HX−3941HP(旭化成株式会社製、商品名)52質量部と、平均粒径が0.5μmの球状シリカフィラー100質量部と、平均粒径が3μmの金めっきプラスチック粒子AU−203A(積水化学工業株式会社製、商品名)4.3質量部とを、トルエン及び酢酸エチルの混合溶媒中に溶解・分散した。その結果、接着剤組成物のワニスを得た。
得られた半導体チップをテトラヒドロフラン溶液に漬けることによって接着剤層を溶解させた後、半導体チップの回路面に発生したクラックの大きさをメジャースコープを用いて計測した。その結果、半導体チップの切断面から回路面に平行な方向に最大で17μm、回路面から深さ方向に最大で10μmのクラックを有する半導体チップの存在が確認された。
接続時にはみ出した接着剤層中の樹脂の半導体チップ側面への這い上がりは少なかった。また、吸着ヘッドの汚染も発生しなかった。
半導体ウェハ、接着剤層及びダイシングテープがこの順に積層された積層体を以下のようにダイシングしたこと以外は実施例1と同様にして半導体チップを作製した。
得られた半導体チップをテトラヒドロフラン溶液に漬けることによって接着剤層を溶解させた後、半導体チップの回路面に発生したクラックの大きさをメジャースコープを用いて計測した。その結果、半導体チップの切断面から回路面に平行な方向に最大で69μm、回路面から深さ方向に最大で137μmのクラックを有する半導体チップの存在が確認された。
半導体ウェハの裏面にバックグラインド処置を施していないこと以外は実施例1と同様にして半導体チップを作製した。バックグラインド処置を施していないため、半導体ウェハの厚さは725μmであった。
接着樹脂組成物のワニスを得る際に、平均粒径が0.5μmの球状シリカフィラーの配合割合を20質量部としたこと以外は実施例1と同様にして半導体チップを作製した。また、得られた半導体チップを用いて実施例1と同様にして半導体デバイスを作製した。
得られた半導体チップをテトラヒドロフラン溶液に漬けることによって接着剤層を溶解させた後、半導体チップの回路面に発生したクラックの大きさをメジャースコープを用いて計測した。その結果、半導体チップの切断面から回路面に平行な方向に最大で25μm、回路面から深さ方向に最大で20μmのクラックを有する半導体チップの存在が確認された。
接続時にはみ出した接着剤層中の樹脂の半導体チップ側面への這い上がりは少なかった。また、吸着ヘッドの汚染も発生しなかった。
接着樹脂組成物のワニスを得る際に、エポキシ樹脂YDCN−703(東都化成株式会社製、商品名)の配合割合を40質量部、フェノールアラルキル樹脂XLC−LL(三井化学株式会社製、商品名)の配合割合を20質量部、エポキシ基含有アクリルゴムHTR−860P−3(ナガセケムテックス株式会社製、商品名、質量平均分子量80万)の配合割合を20質量部、マイクロカプセル型硬化剤HX−3941HP(旭化成株式会社製、商品名)の配合割合を20質量部としたこと以外は実施例1と同様にして半導体チップを作製した。
得られた半導体チップをテトラヒドロフラン溶液に漬けることによって接着剤層を溶解させた後、半導体チップの回路面に発生したクラックの大きさをメジャースコープを用いて計測した。その結果、半導体チップの切断面から回路面に平行な方向に最大で17μm、回路面から深さ方向に最大で10μmのクラックを有する半導体チップの存在が確認された。
接続時にはみ出した接着剤層中の樹脂の半導体チップ側面への這い上がりは少なかった。また、吸着ヘッドの汚染も発生しなかった。
実施例1と同様にして得られた接着シートを半導体ウェハの回路面にラミネートした。ラミネート後、半導体ウェハの外形に沿ってセパレータ及び接着剤層のはみ出し部分を切断した。
実施例1と同様にして接着剤層及びセパレータからなる接着シートを得た。この接着シートを280mm×280mmの矩形に切断した。また、実施例1と同様にして、ジェイシーエム製のダイアタッチフィルムマウンターの吸着ステージ上に、半導体ウェハを載置した。
Claims (1)
- 加圧及び加熱によって硬化して半導体チップと配線基板とを接続すると共に、配線基板の配線と半導体チップの端子とを電気的に接続する接着フィルムであって、
硬化することによって粘着力が低下する粘着層を有するダイシングテープ側を半導体ウェハの回路面が向くように、前記ダイシングテープ、前記接着フィルム及び前記半導体ウェハがこの順に積層された積層体を準備する工程と、
前記半導体ウェハの前記回路面とは反対側の面から前記回路面の回路パターンを認識することによってカット位置を認識する工程と、
前記カット位置を認識した後に、少なくとも前記半導体ウェハ及び前記接着フィルムを、前記積層体の厚み方向に切断する切断工程と、
前記切断工程後に前記ダイシングテープを硬化させ、前記ダイシングテープと前記接着フィルムとを剥離させることによって、接着フィルムが付着した半導体チップを作製する工程と、
前記接着フィルムが付着した前記半導体チップの回路面における端子と、配線基板の配線とを位置合わせする工程と、
前記配線基板の前記配線と前記半導体チップの前記端子とが電気的に接続されるように、前記配線基板と前記半導体チップとを前記接着フィルムを介して接続する工程と、を備えた半導体デバイスの製造方法に用いられ、
熱可塑性樹脂、熱硬化性樹脂及び硬化剤を含む樹脂組成物と、フィラーと、を含み、
前記樹脂組成物100質量部に対して、前記フィラーを20〜100質量部含み、
当該接着フィルムを170〜240℃の温度で5〜20秒間加熱したときに、DSC(示差走査熱量計)による発熱量から算出される当該接着フィルムの反応率が50%以上である、接着フィルム。
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US8034659B2 (en) | 2011-10-11 |
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TW200816335A (en) | 2008-04-01 |
TWI420608B (zh) | 2013-12-21 |
US20100003771A1 (en) | 2010-01-07 |
KR101131366B1 (ko) | 2012-04-04 |
CN102148179A (zh) | 2011-08-10 |
JP5181222B2 (ja) | 2013-04-10 |
CN101473425B (zh) | 2011-02-09 |
TW201338064A (zh) | 2013-09-16 |
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JP2012054582A (ja) | 2012-03-15 |
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