JP5263158B2 - 回路部材接続用接着剤及び半導体装置 - Google Patents
回路部材接続用接着剤及び半導体装置 Download PDFInfo
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- JP5263158B2 JP5263158B2 JP2009523890A JP2009523890A JP5263158B2 JP 5263158 B2 JP5263158 B2 JP 5263158B2 JP 2009523890 A JP2009523890 A JP 2009523890A JP 2009523890 A JP2009523890 A JP 2009523890A JP 5263158 B2 JP5263158 B2 JP 5263158B2
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- resin
- barium sulfate
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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Description
さらに、特許文献1に記載のウェハ加工用テープを用い、半導体装置を製造した場合における高温高湿下及び温度サイクル試験を行った場合の接続信頼性について改善の余地がある。
なお、「硬化後の40℃〜100℃の線膨張係数」とは、例えば回路部材接続用接着剤を200℃に設定したオーブンに1時間放置し、加熱硬化処理を行うことにより得られた硬化体の40℃〜100℃の線膨張係数をいう。
平均粒径が0.1μmを下回る場合、粒子の比表面積が大きく、表面エネルギーも大きくなるため、粒子同士の相互作用が大きくなり、凝集体が発生し、分散性を損なう傾向にある。また凝集体の分散が良好であったとしても、比表面積が大きいことによって、樹脂に分散した際の増粘挙動が大きくなり、成形性を損なう傾向にある。
一方、平均粒径が10μmより大きい場合、粒径が小さい場合とは逆に比表面積が小さくなるため、樹脂の流動性が大きくなり、成型時のボイド発生が起きやすくなる。また、粒子分散の目的の一つである、樹脂の補強効果について、同一添加量で粒子を分散させたとしても粒子数自体が少なくなるため、補強効果が小さくなる傾向にある。また粒子径が大きい場合には、チップのバンプと回路基板の電極間への硫酸バリウムのかみこみによる電気的特性の阻害発生が起きやすい傾向にある。特に低圧で実装する場合やバンプの材質がニッケル等の硬質である場合には硫酸バリウムが端子に埋め込まれず、直接接触におけるバンプと基板電極の接触の妨げや、導電粒子を添加した系においても導電粒子扁平の妨げとなり、電気的接続を阻害する傾向にある。
硫酸バリウムの含有量が20質量部より少ない場合には、回路部材接続用接着剤の線膨張係数の増大と、弾性率の低下を招き、圧着後の半導体チップと基板の接続信頼性が低下する傾向にある。一方、硫酸バリウムの含有量が250質量部より多い場合は、回路部材接続用接着剤の溶融粘度が増加するため、半導体の突出電極と基板の回路が十分に接することが困難となる傾向になる。
すなわち、回路部材接続用接着剤を加熱温度80℃に設定したラミネータによってウェハにラミネートした後、UV照射前のダイシングテープの粘着面を回路部材接続用接着剤として40℃でラミネートを行った後、ダイシングテープ側に15mWで300mJ程度のUV照射を行う。UV照射後のダイシングテープに10mm幅の切込みを入れて引張り測定用の短冊を準備する。ウェハをステージに押さえつけ、短冊にしたダイシングテープの一端を引張り測定機の引張り治具に固定して90°ピール試験を行い、回路部材接続用接着剤とUV照射後のダイシングテープを引き剥がす。この測定によって回路部材接続用接着剤とUV照射後のダイシングテープの接着力が測定できる。
すなわち、回路部材接続用接着剤を加熱温度80℃に設定したラミネータによってウェハにラミネートした後、回路部材接続用接着剤に粘着面を向けてカプトンテープ(日東電工製、10mm幅、25μm厚)を貼付けて十分に密着させた後、カプトンテープ外形の回路部材接続用接着剤に10mm幅に切込みを入れる。でき上がった回路部材接続用接着剤とカプトンテープの積層体の一端をウェハから引き剥がし、引張り測定機の引張り治具に固定する。ウェハをステージに押さえつけ、短冊を引き上げて90°ピール試験を行い、回路部材接続用接着剤をウェハから引き剥がす。この測定によって回路部材接続用接着剤と半導体ウェハの接着力が測定できる。
可視光並行透過率が80%以上の場合は硫酸バリウムを高充填した場合であっても所定の透過率を満足することができるため好ましい。硫酸バリウムを除いた接着剤成分の可視光並行透過率が15%より低い場合、硫酸バリウムを添加しない状態であってもフリップチップボンダーでの認識マーク識別が困難となり、位置合わせ作業が難しくなる傾向にある。可視光並行透過率が80%以上の接着剤成分を得るためには、回路部材接続用接着剤に含まれる硬化性樹脂、熱可塑性樹脂、硬化性樹脂用硬化剤、共重合性樹脂、カップリング剤等が相分離しないことが望ましい。
このような組み合わせの相対向する回路基板を本発明の回路部材接続用接着剤により接続した場合には、半導体チップの突出した接続端子と基板の端子とが電気的に接続されるとともに半導体チップと基板とが接着される。
突出した接続端子は単一の金属で構成されている必要はなく、金、銀、銅、ニッケル、インジウム、パラジウム、スズ、ビスマス等複数の金属成分を含んでいてもよいし、これらの金属層が積層された形をしていてもよい。また、(I)突出した接続端子を有する半導体チップは、突出した接続端子を有する半導体ウェハの状態でも構わない。
半導体チップの突出した接続端子と基板の配線パターンとの位置を合わせるために、半導体チップは突出した接続端子と同一面に位置合わせマークを有する。
また、配線パターンは単一の金属で形成されている必要はなく、金、銀、銅、ニッケル、インジウム、パラジウム、スズ、ビスマス等複数の金属成分を含んでいてもよいし、これらの金属層が積層された形をしていてもよい。また、基板が半導体チップの場合、配線パターンは通常アルミニウムで構成されているが、その表面に、金、銀、銅、ニッケル、インジウム、パラジウム、スズ、ビスマス等の金属層を形成してもよい。
すなわち、(1)図1〜3に示す工程を通して、チップ化する前の突出した接続端子1を有する半導体ウェハ2、半導体ウェハ2の突出した接続端子1面に配置した半導体ウェハ2と同等の面積の回路部材接続用接着剤3及び基材フィルム4がこの順で積層された積層体を得る。(2)この積層体の基材フィルム4を剥がし、半導体ウェハ2及び回路部材接続用接着剤3よりも大面積でありダイシングフレーム6の内寸よりも大きく外寸よりも小さい面積のダイシングテープ5上に固定する。(3)これを図4に示す通り、ダイシングブレード7を用いてダイシングの溝8に沿って個片に切断し、(4)図5に示す通りダイシングテープ5からはく離することによって、個片化した回路部材接続用接着剤付半導体チップを得ることができる。
硬化性樹脂としてエポキシ樹脂EP−1032−H60(製品名、ジャパンエポキシレジン株式会社製)20重量部及びエポキシ樹脂YL980(製品名、ジャパンエポキシレジン株式会社製)15重量部、熱可塑性樹脂としてフェノキシ樹脂FX293(製品名、東都化成株式会社)25重量部、硬化性樹脂用硬化剤としてマイクロカプセル型硬化剤HX−3941HP(製品名、旭化成株式会社製)40重量部、シランカップリング剤SH6040(製品名、東レダウコーニングシリコーン製)1重量部を用い、表1記載の組成でトルエンと酢酸エチルの混合溶媒中に溶解し、接着樹脂組成物のワニスを得た。
このワニスの一部をセパレータフィルム(PETフィルム)上にロールコータを用いて塗布した後、70℃のオーブンで10分間乾燥させることによって、セパレータ上に厚み25μmの接着剤樹脂組成物の膜を得た。
この膜をアッベ屈折計(ナトリウムD線)の試料台に設置し、セパレータを剥がしマッチングオイルを1滴垂らして屈折率1.74のテストピースを乗せて屈折率を測定した。この結果、接着剤樹脂組成物の屈折率は1.60(25℃)であった。
次に、ワニスを計量した後、平均粒径0.25μmの沈降性硫酸バリウム1を112重量部加え、撹拌して分散した。この混合物をセパレータフィルム(PETフィルム)上にロールコータを用いて塗布した後、70℃のオーブンで10分間乾燥させることによって、セパレータ上に厚み50μmの回路部材接続用接着剤を得た。
沈降性硫酸バリウム1に代えて、平均粒径0.1μmの沈降性硫酸バリウム2(堺化学工業株式会社製、屈折率1.64、ソックスレー抽出による洗浄済み)を使用したこと以外は実施例1と同様にして、表1に記載の組成で透過性確認用フィルム、回路部材接続用接着剤を得た(表1中の配合単位は重量部)。
沈降性硫酸バリウム1に代えて、平均粒径2.0μmの鉱物由来硫酸バリウム3(竹原化学工業株式会社製、屈折率1.64、バライト粉)を使用したこと以外は実施例1と同様にして、表1に記載の組成で透過性確認用フィルム、回路部材接続用接着剤を得た(表1中の配合単位は重量部)。
沈降性硫酸バリウム1に代えて、平均粒径0.2μmのシリカ粒子SE1050(製品名、アドマテックス社製)65重量部を使用したこと以外は実施例1と同様にして、表2に記載の組成で透過性確認用フィルム、回路部材接続用接着剤を得た(表2中の配合単位は重量部)。
沈降性硫酸バリウム1に代えて、平均粒径0.2μmのシリカ粒子SE1050(製品名、アドマテックス社製)100重量部を使用したこと以外は実施例1と同様にして、表2に記載の組成で透過性確認用フィルム、回路部材接続用接着剤を得た(表2中の配合単位は重量部)。
沈降性硫酸バリウム1に代えて、平均粒径0.5μmのシリカ粒子SE2050(製品名、アドマテックス社製)100重量部を使用したこと以外は実施例1と同様にして、表2に記載の組成で透過性確認用フィルム、回路部材接続用接着剤を得た(表2中の配合単位は重量部)。
実施例1〜3及び比較例1〜3で得られた透過性確認用フィルムについて、UV−VIS分光光度計を用いて、可視光並行透過率の測定を行った。
実施例1〜3及び比較例1〜3で得られた回路部材接続用接着剤をセパレータごと200℃に設定したオーブンに1時間放置し、加熱硬化処理を行った。加熱硬化後のフィルムをセパレータからはく離し、30mm×2mmの大きさに切断した。セイコーインスツルメンツ社製TMA/SS6100(製品名)を用い、チャック間20mmに設定後、測定温度範囲20℃〜300℃、昇温速度5℃/min、断面積に対し0.5MPa圧力となる荷重条件で引張り試験モードにて熱機械分析を行い、線膨張係数を測定した。
実施例1〜3及び比較例1〜3で得られた回路部材接続用接着剤をアルミ製測定容器に2〜10mg計量した後、パーキンエルマー社製DSC(Differential Scaning Calorimeter)Pylis1(製品名)で30〜300℃まで20℃/minの昇温速度で発熱量測定を行い、これを初期発熱量とした。
次いで、熱圧着装置の加熱ヘッドをセパレータに挟んだ熱電対で温度確認を行って20秒後に180度に達する温度に設定した。この加熱ヘッド設定で、セパレータに挟んだ回路部材接続用接着剤を20秒間加熱し、熱圧着時と同等の加熱処理が施された状態のフィルムを得た。加熱処理後のフィルムを2〜10mg計量してアルミ製測定容器に入れ、DSCで30〜300℃まで20℃/minの昇温速度で発熱量測定を行い、これを加熱後発熱量とした。得られた発熱量から次の式で反応率(%)を算出した。
式: (初期発熱量−加熱後発熱量)/(初期発熱量)×100
ジェイシーエム製のダイアタッチフィルムマウンターの吸着ステージを80℃に加熱後、吸着ステージ上に金めっきバンプが形成された厚さ150μm、直径6インチの半導体ウェハをバンプ側を上に向けて搭載した。上記の回路部材接続用接着剤をセパレータごと200mm×200mmに切断し、絶縁性接着剤層側を半導体ウェハのバンプ側に向け、エアを巻き込まないように半導体ウェハの端からダイアタッチマウンターの貼付ローラで押しつけてラミネートした。
ラミネート後、ウェハの外形に沿って接着剤のはみ出し部分を切断した。半導体ウェハと回路部材接続用接着剤の積層体を、接着剤の貼付いた面を下に向けてステージ温度を40℃に設定したダイアタッチフィルムマウンターの吸着ステージに搭載し、さらに12インチウェハ用のダイシングフレームをウェハ外周に設置した。UV硬化型ダイシングテープUC−334EP−110(製品名、古河電工製)の粘着面を半導体ウェハ側に向け、エアを巻き込まないようにダイシングフレームの端からダイアタッチマウンターの貼付ローラで押しつけてラミネートした。
ラミネート後、ダイシングフレームの外周と内周の中間付近でダイシングテープを切断し、回路部材接続用接着剤のセパレータをはく離し、ダイシングフレームに固定された回路部材接続用接着剤/半導体ウェハ/ダイシングテープ積層体を得た。
ダイシングフレームに固定された回路部材接続用接着剤/半導体ウェハ/ダイシングテープ積層体を、株式会社ディスコ製フルオートマチックダイシングソーDFD6361に回路部材接続用接着剤側をダイシングブレード側に向けて搭載した。
接着剤を透過してウェハ切断位置を合わせた後、1段目はバックグラインド面から表面から100μmまでを切断し、二段目で残りのウェハ及びダイシングテープ内まで長辺側10mm間隔10mm間隔で切断した。切断後、洗浄し、吹きつけで水分を飛ばした後、ダイシングテープ側からUV照射を行った。
この後、ダイシングテープ側から半導体ウェハ側に突き上げ、回路部材接続用接着剤がバンプ側に形成された10mm×10mmの回路部材接続用接着剤付半導体チップを得た。
回路部材接続用接着剤付半導体チップのバックグラインド面を株式会社アルテクス製超音波フリップチップボンダーSH−50MP(製品名)の吸着ヘッド側に向けてチップを吸引し、モリテックス社製のハロゲン光源及びライトガイドによって回路部材接続用接着剤層側から光を照射し、半導体チップ表面に形成されたアルミ製のチップアライメントマークを識別して位置合わせを行った。次いで位置合わせを行ったAu/NiめっきCu回路プリント基板に接続して、半導体装置を得た。
半導体装置の作製の際に、チップアライメントマークが認識できたものを「可能」として、認識できなかったものを「不可」として、それぞれ評価した。
得られた半導体装置の176バンプ連結デージーチェーンでの接続抵抗を測定した。
得られた半導体装置を30℃、相対湿度60%の槽内に200時間放置した後に、176バンプ連結デージーチェーンでの接続抵抗を測定した。
高温高湿試験200時間後の接続抵抗の測定を行った後の半導体装置について、IRリフロー処理(265℃最大)を3回行った。さらに、IRリフロー後の半導体装置を温度サイクル試験機(−55℃:30分、室温:5分、125℃:30分)内に放置し、槽内での接続抵抗の測定を行った。
実施例1および比較例1〜3で得られた回路部材接続用接着剤をセパレータごと200℃に設定したオーブンに1時間放置し、加熱硬化処理を行った。加熱硬化後のフィルムをセパレータから剥離し、15mm×15mmの大きさに切断した。このサンプルを165℃のオーブンに1時間放置し、絶乾処理を行った後、秤量瓶を用いて初期重量を測定した。
次いで、上記サンプルを85℃、85%RHの恒温槽に放置し、吸湿処理を1000時間行った。吸湿後の重量を測定し、次の式を用いて吸湿率を算出した。
式: (吸湿後重量−初期重量)/(初期重量)×100
Claims (4)
- 熱硬化性樹脂、熱可塑性樹脂、熱硬化性樹脂用硬化剤及び硫酸バリウムを含有し、
前記硫酸バリウムの平均粒径が0.1μm〜10μmであり、
未硬化時の可視光並行透過率が15〜90%であり、
180℃で20秒間加熱した後の示差走査熱量測定での反応率が、75%以上であることを特徴とする回路部材接続用接着剤。 - 硬化後の40℃〜100℃の線膨張係数が、70×10−6/℃以下であることを特徴とする、請求項1に記載の回路部材接続用接着剤。
- 吸湿率が0.4%〜1.2%であることを特徴とする、請求項1又は2に記載の回路部材接続用接着剤。
- 請求項1〜3のいずれか一項に記載の回路部材接続用接着剤を用いて製造されてなる半導体装置。
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JP5510646B2 (ja) * | 2010-03-18 | 2014-06-04 | スタンレー電気株式会社 | 車両用灯具 |
JP7176532B2 (ja) * | 2017-12-18 | 2022-11-22 | 昭和電工マテリアルズ株式会社 | 半導体装置、半導体装置の製造方法及び接着剤 |
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JPH10226773A (ja) * | 1996-12-10 | 1998-08-25 | Sumitomo Bakelite Co Ltd | 異方導電フィルム |
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JP2000286298A (ja) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | 電子部品の実装方法及びその装置 |
JP2001060601A (ja) * | 1999-08-19 | 2001-03-06 | Sony Chem Corp | 接着材料及び回路接続方法 |
JP2001126541A (ja) * | 1999-10-28 | 2001-05-11 | Sumitomo Bakelite Co Ltd | 異方導電フィルム及び電気・電子部品 |
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2008
- 2008-12-02 JP JP2009523890A patent/JP5263158B2/ja not_active Expired - Fee Related
- 2008-12-02 WO PCT/JP2008/071897 patent/WO2009072497A1/ja active Application Filing
- 2008-12-03 TW TW097146985A patent/TW200940668A/zh unknown
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JPS60120772A (ja) * | 1983-12-06 | 1985-06-28 | Matsushita Electric Ind Co Ltd | 異方導電性接着剤 |
JPH10226773A (ja) * | 1996-12-10 | 1998-08-25 | Sumitomo Bakelite Co Ltd | 異方導電フィルム |
JPH11100562A (ja) * | 1997-09-26 | 1999-04-13 | Sumitomo Bakelite Co Ltd | 多層プリント配線板用層間絶縁接着剤及び銅箔 |
JPH11329075A (ja) * | 1999-01-28 | 1999-11-30 | Sony Chem Corp | 異方性導電性接着剤 |
JP2000286298A (ja) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | 電子部品の実装方法及びその装置 |
JP2001060601A (ja) * | 1999-08-19 | 2001-03-06 | Sony Chem Corp | 接着材料及び回路接続方法 |
JP2001126541A (ja) * | 1999-10-28 | 2001-05-11 | Sumitomo Bakelite Co Ltd | 異方導電フィルム及び電気・電子部品 |
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KR102185773B1 (ko) * | 2020-07-08 | 2020-12-02 | 주식회사 정석케미칼 | 차선 도색 성능 향상을 위한 속경화 수용성 노면표지용 도료 조성물 및 노면 시공방법 |
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JPWO2009072497A1 (ja) | 2011-04-21 |
TW200940668A (en) | 2009-10-01 |
WO2009072497A1 (ja) | 2009-06-11 |
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