JP5890960B2 - フリップチップ実装方法 - Google Patents
フリップチップ実装方法 Download PDFInfo
- Publication number
- JP5890960B2 JP5890960B2 JP2011034782A JP2011034782A JP5890960B2 JP 5890960 B2 JP5890960 B2 JP 5890960B2 JP 2011034782 A JP2011034782 A JP 2011034782A JP 2011034782 A JP2011034782 A JP 2011034782A JP 5890960 B2 JP5890960 B2 JP 5890960B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- suction
- chip
- support
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
(1)エポキシ樹脂
・HP−7200(ジシクロペンタジエン型エポキシ樹脂、DIC社製)
・EXA−4710(ナフタレン型エポキシ樹脂、DIC社製)
(2)エポキシ基を有する高分子化合物
・G−2050M(グリシジル基含有アクリル樹脂、重量平均分子量20万、エポキシ当量340、日油社製)
(3)硬化剤
・YH−309(ビシクロ骨格を有する酸無水物、三菱化学社製)
(5)硬化促進剤
・フジキュア7000(液状イミダゾール、T&K TOKA社製)
(6)接着性付与剤
・エポキシシランカップリング剤(KBM−403、信越化学社製)
(7)チキソトロピー付与剤
・AC4030(応力緩和ゴム系高分子、ガンツ化成社製)
(8)シリカフィラー
・SE−1050−SPT(フェニルトリメトキシシラン表面処理球状シリカ、平均粒子径0.3μm、アドマテックス社製)
・SX009−MJF(フェニルトリメトキシシラン表面処理球状シリカ、平均粒子径0.05μm、アドマテックス社製)
3 絶縁性樹脂層
4 回路基板
6 支持具
7 吸着ツール
10 半導体チップ
S 回路面
Claims (1)
- 回路面に突起電極を有しかつ前記回路面に絶縁性樹脂層が形成された半導体チップを、前記回路面を下にして支持具上に載置するチップ準備工程と、
前記支持具上に載置された前記半導体チップに対して、空気の吸引孔を備えた吸着面を下面に有する吸着手段を上方から近づけ、前記吸着面が前記半導体チップと接触しない位置で、前記吸引孔による空気の吸引により前記半導体チップを前記支持具上からピックアップして前記吸着面に吸着させるチップピックアップ工程と、
前記半導体チップを加熱しながら前記吸着手段により前記半導体チップの前記回路面を回路基板に押圧して、前記回路基板と前記半導体チップとを電気的に接続するチップ実装工程と、
前記チップ実装工程の後に前記吸着手段を冷却する冷却工程とを備え、
前記チップピックアップ工程において、前記半導体チップのピックアップ時の前記吸着面と前記半導体チップとの距離が0.2mm〜1mmの範囲であり、
前記チップピックアップ工程において、前記半導体チップのピックアップ時の前記吸着手段の温度が100℃〜200℃であることを特徴とするフリップチップ実装方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011034782A JP5890960B2 (ja) | 2011-02-21 | 2011-02-21 | フリップチップ実装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011034782A JP5890960B2 (ja) | 2011-02-21 | 2011-02-21 | フリップチップ実装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012174861A JP2012174861A (ja) | 2012-09-10 |
JP5890960B2 true JP5890960B2 (ja) | 2016-03-22 |
Family
ID=46977500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011034782A Expired - Fee Related JP5890960B2 (ja) | 2011-02-21 | 2011-02-21 | フリップチップ実装方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5890960B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5934078B2 (ja) * | 2012-11-19 | 2016-06-15 | 信越化学工業株式会社 | 繊維含有樹脂基板及び半導体装置の製造方法 |
WO2014098174A1 (ja) | 2012-12-21 | 2014-06-26 | 株式会社新川 | フリップチップボンダ及びボンディングステージの平坦度並びに変形量補正方法 |
TWI490956B (zh) * | 2013-03-12 | 2015-07-01 | Shinkawa Kk | 覆晶接合器以及覆晶接合方法 |
JP2015220237A (ja) * | 2014-05-14 | 2015-12-07 | 日東電工株式会社 | シート状樹脂組成物及び半導体装置の製造方法 |
US9929121B2 (en) * | 2015-08-31 | 2018-03-27 | Kulicke And Soffa Industries, Inc. | Bonding machines for bonding semiconductor elements, methods of operating bonding machines, and techniques for improving UPH on such bonding machines |
JP6925021B2 (ja) * | 2017-03-27 | 2021-08-25 | ナミックス株式会社 | フリップチップ実装方法 |
KR102284943B1 (ko) | 2017-05-19 | 2021-08-03 | 가부시키가이샤 신가와 | 본딩 장치 및 본딩 방법 |
JP7233079B2 (ja) * | 2018-05-31 | 2023-03-06 | ボンドテック株式会社 | 部品実装システム、部品供給装置および部品実装方法 |
JP7085919B2 (ja) * | 2018-06-29 | 2022-06-17 | リンテック株式会社 | 実装装置および実装方法 |
TW202119533A (zh) * | 2019-11-04 | 2021-05-16 | 台灣愛司帝科技股份有限公司 | 具有晶片吸附功能的晶片承載結構 |
CN115668468A (zh) | 2020-05-19 | 2023-01-31 | 株式会社新川 | 接合装置以及接合头调整方法 |
CN116013820B (zh) * | 2023-03-28 | 2023-06-16 | 中江立江电子有限公司 | 一种封装机 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000077436A (ja) * | 1998-08-31 | 2000-03-14 | Matsushita Electric Ind Co Ltd | チップ吸着用のダイコレットおよびチップのボンディング装置 |
JP3556498B2 (ja) * | 1998-12-14 | 2004-08-18 | Tdk株式会社 | チップ接合用ノズル |
JP2001358198A (ja) * | 2000-06-13 | 2001-12-26 | Hitachi Ltd | 半導体装置の搬送方法および実装方法 |
JP4669600B2 (ja) * | 2000-08-18 | 2011-04-13 | 東レエンジニアリング株式会社 | 実装装置 |
JP2004221386A (ja) * | 2003-01-16 | 2004-08-05 | Sony Corp | 粒状半導体の検査測定装置及び粒状半導体の検査測定方法 |
JP4459844B2 (ja) * | 2005-03-11 | 2010-04-28 | 芝浦メカトロニクス株式会社 | 半導体チップの実装装置 |
JP2009158718A (ja) * | 2007-12-26 | 2009-07-16 | Canon Machinery Inc | 半導体チップの実装装置及びその実装方法 |
JP2010245418A (ja) * | 2009-04-09 | 2010-10-28 | Toray Ind Inc | 電子素子、電子素子の実装方法および電子装置の製造方法 |
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2011
- 2011-02-21 JP JP2011034782A patent/JP5890960B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2012174861A (ja) | 2012-09-10 |
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