JP7243016B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP7243016B2 JP7243016B2 JP2019013870A JP2019013870A JP7243016B2 JP 7243016 B2 JP7243016 B2 JP 7243016B2 JP 2019013870 A JP2019013870 A JP 2019013870A JP 2019013870 A JP2019013870 A JP 2019013870A JP 7243016 B2 JP7243016 B2 JP 7243016B2
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- semiconductor chip
- resin
- lead frame
- resin film
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
Claims (4)
- 半導体チップが樹脂封止された半導体装置において、
前記半導体チップは、裏面側に突出する凸部を備え、支持部上に配置され、
該支持部は、前記半導体チップの前記凸部が挿入される貫通部と、前記半導体チップの一部に当接する当接部とを備え、
前記凸部の表面に備える絶縁性樹脂の表面と、前記支持部の一部が前記半導体装置の裏面から露出するように樹脂封止されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記絶縁性樹脂は、前記貫通部の側壁と前記凸部との間に充填されていることを特徴とする半導体装置。 - 半導体チップを樹脂封止する半導体装置の製造方法において、
裏面側に突出する凸部を備えた半導体チップを用意する工程と、
前記半導体チップの前記凸部が挿入される貫通部と前記半導体チップの一部が当接する当接部とを有する支持部を備え、前記半導体チップと接続可能なリードフレームを用意する工程と、
樹脂フィルム上に、前記リードフレームと、前記貫通部に前記凸部を挿入し一部を前記当接部に当接した状態の前記半導体チップの前記凸部とを接着し、前記半導体チップと前記リードフレームとの接続を形成する工程と、
前記凸部と前記支持部とを前記樹脂フィルムに接着した状態で前記半導体チップと前記支持部を樹脂封止する工程と、
樹脂封止された封止体から前記樹脂フィルムを除去する工程と、
前記封止体を個片化する工程と、を含むことを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記樹脂フィルム上に、前記リードフレームと、前記貫通部に前記凸部を挿入し一部を前記当接部に当接した状態の前記半導体チップの前記凸部とを接着する際、前記貫通部内に露出する前記樹脂フィルム上に絶縁性樹脂材を塗布し、前記貫通部に前記凸部を挿入することで前記貫通部の側壁と前記凸部との間に前記絶縁性樹脂材を充填させ、該絶縁性樹脂材により前記凸部表面を被覆する工程を含むことを特徴とする半導体装置の製造方法。
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JP2019013870A JP7243016B2 (ja) | 2019-01-30 | 2019-01-30 | 半導体装置およびその製造方法 |
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JP2019013870A JP7243016B2 (ja) | 2019-01-30 | 2019-01-30 | 半導体装置およびその製造方法 |
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JP2020123641A JP2020123641A (ja) | 2020-08-13 |
JP7243016B2 true JP7243016B2 (ja) | 2023-03-22 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134663A (ja) | 2000-10-26 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2002134439A (ja) | 2000-10-26 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法と樹脂封止型半導体装置およびその製造方法 |
JP2004303992A (ja) | 2003-03-31 | 2004-10-28 | Seiko Epson Corp | 半導体装置、電子デバイス、電子機器および半導体装置の製造方法 |
JP2005294443A (ja) | 2004-03-31 | 2005-10-20 | Sony Corp | 半導体装置及びその製造方法 |
JP2008211041A (ja) | 2007-02-27 | 2008-09-11 | Rohm Co Ltd | 半導体装置、リードフレームおよび半導体装置の製造方法 |
JP2012054582A (ja) | 2006-06-23 | 2012-03-15 | Hitachi Chem Co Ltd | 接着フィルム |
JP2013235999A (ja) | 2012-05-10 | 2013-11-21 | Renesas Electronics Corp | 半導体装置の製造方法および半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0574932A (ja) * | 1991-09-17 | 1993-03-26 | Fujitsu Ltd | 半導体ウエハのダイシング方法 |
JPH08340074A (ja) * | 1995-04-14 | 1996-12-24 | Matsushita Electron Corp | 樹脂封止型半導体装置及びその製造方法 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002134663A (ja) | 2000-10-26 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2002134439A (ja) | 2000-10-26 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法と樹脂封止型半導体装置およびその製造方法 |
JP2004303992A (ja) | 2003-03-31 | 2004-10-28 | Seiko Epson Corp | 半導体装置、電子デバイス、電子機器および半導体装置の製造方法 |
JP2005294443A (ja) | 2004-03-31 | 2005-10-20 | Sony Corp | 半導体装置及びその製造方法 |
JP2012054582A (ja) | 2006-06-23 | 2012-03-15 | Hitachi Chem Co Ltd | 接着フィルム |
JP2008211041A (ja) | 2007-02-27 | 2008-09-11 | Rohm Co Ltd | 半導体装置、リードフレームおよび半導体装置の製造方法 |
JP2013235999A (ja) | 2012-05-10 | 2013-11-21 | Renesas Electronics Corp | 半導体装置の製造方法および半導体装置 |
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