JP5147575B2 - 成膜装置及び発光装置の作製方法 - Google Patents
成膜装置及び発光装置の作製方法 Download PDFInfo
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- JP5147575B2 JP5147575B2 JP2008178855A JP2008178855A JP5147575B2 JP 5147575 B2 JP5147575 B2 JP 5147575B2 JP 2008178855 A JP2008178855 A JP 2008178855A JP 2008178855 A JP2008178855 A JP 2008178855A JP 5147575 B2 JP5147575 B2 JP 5147575B2
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- 229910002804 graphite Inorganic materials 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
を導入することによって、5.5Vで100cd/m2の十分な輝度が達成された(文献1:C. W. Tang and S. A. VanSlyke, "Organic electroluminescent diodes", Applied Physics Letters, vol. 51, No.12, 913-915 (1987))。
を同時に持たせる必要がなくなり、分子設計等に幅広い自由度を持たせることができる点にある(例えば、無理にバイポーラー材料を探索する必要がなくなる)
。つまり、発光特性のいい材料、キャリア輸送性が優れる材料などを、各々組み合わせることで、容易に高発光効率が達成できるということである。
実際、現在の発光素子において、駆動電圧に関しては共役ポリマーを用いた単層構造の素子の方が優れており、パワー効率(単位:[lm/W])でのトップデータ(ただし、一重項励起状態からの発光を比較)を保持していると報告されている(文献4:筒井哲夫、「応用物理学会有機分子・バイオエレクトロニクス分科会会誌」、Vol. 11、No. 1、P.8(2000))。
さらに、複数の蒸発源を時間的に分断することなく続けて蒸着することもできる。なお、蒸発源が作動することにより有機化合物は気化されて上方に飛散し、メタルマスク202に設けられた開口部212を通って基板200に蒸着される。
ここで用いるメタルマスク403は、異なる材料を用いて形成されるマスクa509とマスクb510からなる。なお、蒸着時には、これらの開口部511を通過した有機化合物が基板上に成膜される。これらの形状はマスクを用いて蒸着した際の成膜精度を向上させる様に工夫されており、マスクb510が基板404側になるようにして用いる。
702でのクリーニングが可能となる。なお、アライメント室(A)702に予め使用済みのメタルマスクを備えておくことにより、メタルマスクのクリーニングを行うことができる。
また、アライメント室(A)702とは図示しないゲートで密閉遮断されている。
次に、CBPとBCPを5〜10nmの膜厚で同時に蒸着することにより第四の混合領域を形成した後、BCPを8nmの膜厚で成膜することにより、第四の機能領域を形成する。さらに、BCPとAlq3を同時に蒸着することにより5〜10nmの膜厚で第五の混合領域を形成する。最後にAlq3を25nmの膜厚で形成することにより、第五の機能領域を形成することができ、以上により、第一の有機化合物膜を形成する。
また、アライメント室(B)706とは図示しないゲートで密閉遮断されている。さらに成膜室(A)703と同様に図示しないゲートで密閉遮断されたクリーニング予備室713dを備えている。
また、アライメント室(C)708とは図示しないゲートで密閉遮断されている。さらに成膜室(A)703と同様に図示しないゲートで密閉遮断されたクリーニング予備室713fを備えている。
を設けておき、成膜室(D)710からの基板の搬出を行う。ここでの封止処理は形成された発光素子を酸素や水分から保護するための処理であり、カバー材で機械的に封入する、又は熱硬化性樹脂もしくは紫外光硬化性樹脂で封入するといった手段を用いる。
もしくはクライオポンプなどの排気ポンプを用いることが可能であるが、水分等の除去に優れているクライオポンプをドライポンプと組み合わせて用いるのが好ましい。
本実施例では、成膜室(D)912内の成膜部913において、発光素子の陰極となる導電膜としてAl−Li合金膜(アルミニウムとリチウムとの合金膜)を成膜する。なお、周期表の1族もしくは2族に属する元素とアルミニウムとを共蒸着することも可能である。共蒸着とは、同時に蒸発源を加熱し、成膜段階で異なる物質を混合する蒸着法をいう。
なお、本実施例に示した発光装置は、実施例1〜実施例3に示したいずれの成膜装置を用いても作製することが可能である。
Claims (8)
- 内壁の表面が電解研磨されている成膜室であって、
成膜部と、前記成膜部内を連続的に移動できる基板搬送手段とを有し、
前記成膜部は、それぞれ異なる材料が充填された第一の蒸発源を有する第一の蒸着手段と、第二の蒸発源を有する第二の蒸着手段と、第三の蒸発源を有する第三の蒸着手段とを有し、
前記第一の蒸発源、前記第二の蒸発源、および前記第三の蒸発源は複数列設けられており、かつ、同じ行における隣り合う蒸着源には異なる材料が充填されており、
前記第一の蒸着手段と前記第二の蒸着手段と前記第三の蒸着手段とが同時に作動する手段が備えられ、
前記基板搬送手段は、前記成膜部の上方に設けられ、前記成膜部と同一空間を有しており、前記成膜室内にある基板を平面方向に搬送する手段を有し、
前記成膜部は、前記基板搬送手段による前記基板の搬送空間を含んで設けられ、前記基板搬送手段に前記基板が保持された状態で蒸着が行われることを特徴とする成膜装置。 - 内壁の表面が電解研磨されている成膜室であって、
成膜部と、前記成膜部内を連続的に移動できる基板搬送手段とを有し、
前記成膜部は、それぞれ異なる材料が充填された第一の蒸発源を有する第一の蒸着手段と、第二の蒸発源を有する第二の蒸着手段と、第三の蒸発源を有する第三の蒸着手段とを有し、
前記第一の蒸発源、前記第二の蒸発源、および前記第三の蒸発源は複数列設けられており、かつ、同じ行における隣り合う蒸着源には異なる材料が充填されており、
前記第一の蒸着手段から前記第二の蒸着手段へ連続的に作動する手段が備えられ、
前記第二の蒸着手段から前記第三の蒸着手段へ連続的に作動する手段が備えられ、
前記基板搬送手段は、前記成膜部の上方に設けられ、前記成膜部と同一空間を有しており、前記成膜室内にある基板を平面方向に搬送する手段を有し、
前記成膜部は、前記基板搬送手段による前記基板の搬送空間を含んで設けられ、前記基板搬送手段に前記基板が保持された状態で蒸着が行われることを特徴とする成膜装置。 - 内壁の表面が電解研磨されている成膜室であって、
成膜部と、前記成膜部内を連続的に移動できる基板搬送手段とを有し、
前記成膜部は、それぞれ異なる材料が充填された第一の蒸発源を有する第一の蒸着手段と、第二の蒸発源を有する第二の蒸着手段と、第三の蒸発源を有する第三の蒸着手段とを有し、
前記第一の蒸発源、前記第二の蒸発源、及び前記第三の蒸発源は複数列設けられており、かつ、同じ行における隣り合う蒸着源には異なる材料が充填されており、
前記第一の蒸着手段から前記第二の蒸着手段へ時間的に分断することなく作動する手段が備えられ、
前記第二の蒸着手段から前記第三の蒸着手段へ時間的に分断することなく作動する手段が備えられ、
前記基板搬送手段は、前記成膜部の上方に設けられ、前記成膜部と同一空間を有しており、前記成膜室内にある基板を平面方向に搬送する手段を有し、
前記成膜部は、前記基板搬送手段による前記基板の搬送空間を含んで設けられ、前記基板搬送手段に前記基板が保持された状態で蒸着が行われることを特徴とする成膜装置。 - 請求項1乃至請求項3のいずれか一において、前記蒸着を行う際の処理位置は、制御機構により制御されることを特徴とする成膜装置。
- 請求項1乃至請求項4のいずれか一において、前記基板は、ガラス基板であることを特徴とする成膜装置。
- 請求項1乃至請求項5のいずれか一において、前記成膜装置は、ロード室及びアンロード室を有することを特徴とする成膜装置。
- 請求項1乃至請求項6のいずれか一において、前記蒸着はメタルマスクを用いて行われ、前記メタルマスクは前記基板と共に前記基板搬送手段に保持されることを特徴とする成膜装置。
- 請求項1乃至請求項7のいずれか一に記載の前記成膜装置を用いて有機化合物膜を蒸着することを特徴とする発光装置の作製方法。
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- 2002-02-07 TW TW095105238A patent/TWI317248B/zh not_active IP Right Cessation
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KR20020066205A (ko) | 2002-08-14 |
TWI317248B (en) | 2009-11-11 |
CN1783533A (zh) | 2006-06-07 |
KR20080081226A (ko) | 2008-09-09 |
JP5648025B2 (ja) | 2015-01-07 |
TWI286041B (en) | 2007-08-21 |
TW200708174A (en) | 2007-02-16 |
JP2008261058A (ja) | 2008-10-30 |
KR100895876B1 (ko) | 2009-05-04 |
US20040154542A1 (en) | 2004-08-12 |
CN1240106C (zh) | 2006-02-01 |
US20030010288A1 (en) | 2003-01-16 |
US7629025B2 (en) | 2009-12-08 |
JP2012214908A (ja) | 2012-11-08 |
CN1369900A (zh) | 2002-09-18 |
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