JP4690485B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP4690485B2 JP4690485B2 JP2009537941A JP2009537941A JP4690485B2 JP 4690485 B2 JP4690485 B2 JP 4690485B2 JP 2009537941 A JP2009537941 A JP 2009537941A JP 2009537941 A JP2009537941 A JP 2009537941A JP 4690485 B2 JP4690485 B2 JP 4690485B2
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- 239000004065 semiconductor Substances 0.000 title claims description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010410 layer Substances 0.000 claims description 413
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 179
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 171
- 239000000758 substrate Substances 0.000 claims description 143
- 239000011241 protective layer Substances 0.000 claims description 71
- 239000010936 titanium Substances 0.000 claims description 62
- 229910052799 carbon Inorganic materials 0.000 claims description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 42
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 229910052719 titanium Inorganic materials 0.000 claims description 30
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 230000003746 surface roughness Effects 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 50
- 229910052751 metal Inorganic materials 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
- 238000002161 passivation Methods 0.000 description 36
- 108091006146 Channels Proteins 0.000 description 25
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 238000001312 dry etching Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Electrodes Of Semiconductors (AREA)
Description
以下、本発明による半導体素子の第1の実施形態を説明する。本実施形態では、半導体素子として縦型MOSFETを例に挙げて説明する。図1(a)は、炭化珪素基板11を有するMOSFET10を示している。炭化珪素基板11は、例えば4H−SiC(0001)面から<11−20>方向にθ度(0≦θ≦10度)傾いた主面を有する。炭化珪素基板11の主面はSi面であり、裏面はC面である。主面の面粗度は、裏面の面粗度よりも小さい。炭化珪素基板11の不純物濃度は1x1018cm−3以上である。炭化珪素基板11の主面上に、エピタキシャル成長されたn型の4H−SiC(不純物濃度が1x1014〜1x1017cm−3程度、厚さ5ミクロン以上)からなる半導体層12が設けられている。半導体層12と炭化珪素基板11との間に、4H−SiCからなるバッファー層12b(半導体層12より不純物濃度が大きく、膜厚は小さい)を挿入してもよい。
以下、本発明による半導体素子の第2の実施形態を説明する。本実施形態では、半導体素子として縦型ショットキーダイオードを例に挙げて説明する。
1ag ゲート電極18とオーミック接合する電極
1bs 上部配線電極
1bg ゲートパッド電極
1c パッシベーション層
1d 裏面オーミック電極層
1da 反応層
1db 窒化チタン層
1e 裏面保護層
1f 金属電極層
6a ショットキー電極層
6b 上部配線電極層
6c パッシベーション層
10、10a 半導体素子(MOSFET)
11 炭化珪素基板
12 半導体層
13 p型ウェル領域
14 n+型ソース領域
15 p+型コンタクト領域
16 チャネル層
17 ゲート絶縁膜
18 ゲート電極
19 層間絶縁膜
60、60a 半導体素子(ショットキーダイオード)
63 ガードリング領域
69 絶縁層
Claims (2)
- 主面上に半導体層が形成された炭化珪素基板を用意する工程(A)と、
前記炭化珪素基板の裏面にチタンを含む電極層を形成する工程(B)と、
前記炭化珪素基板を熱処理することにより、前記電極層と前記炭化珪素基板を反応させて、チタン、シリコンおよび炭素を含む反応層を前記炭化珪素基板の裏面に形成する工程(C)と、
前記反応層の表面に窒化チタン層を形成する工程(D)と、
を含み、
前記工程(A)において、前記炭化珪素基板は、(0001)面からθ度(0<θ≦10度)傾いた面、または(0001)面を前記主面に有し、前記炭化珪素基板の主面がSi面側であり、前記炭化珪素基板の裏面がC面側であって、
前記炭化珪素基板の裏面の表面粗さは、前記炭化珪素基板の主面の表面粗さに比べて大きく、
前記工程(C)における熱処理を、窒素を含む雰囲気で行うことにより、前記工程(C)と前記工程(D)とを同時に行い、前記反応層における前記炭化珪素基板の裏面と接する側の炭素濃度を前記窒化チタン層における前記炭化珪素基板の裏面と反対側の炭素濃度よりも高くし、
前記工程(D)の後に、前記半導体層の少なくとも一部を直接的または間接的に覆う絶縁層を形成する工程(E)と、
前記オーミック電極層上に保護層を形成する工程(F)と、
前記工程(F)の後に前記絶縁層をエッチングする工程(G)と
をさらに含み、
前記工程(G)において、前記保護層がエッチング耐性を有するようなエッチング条件で、前記絶縁層をエッチングする、半導体素子の製造方法。 - 前記工程(G)の後に前記保護層を除去する工程(H)をさらに含む請求項1に記載の半導体素子の製造方法。
Priority Applications (1)
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JP2009537941A JP4690485B2 (ja) | 2007-10-24 | 2008-10-24 | 半導体素子の製造方法 |
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JP2007276209 | 2007-10-24 | ||
JP2007276209 | 2007-10-24 | ||
JP2008203970 | 2008-08-07 | ||
JP2008203970 | 2008-08-07 | ||
JP2009537941A JP4690485B2 (ja) | 2007-10-24 | 2008-10-24 | 半導体素子の製造方法 |
PCT/JP2008/003019 WO2009054140A1 (ja) | 2007-10-24 | 2008-10-24 | 半導体素子およびその製造方法 |
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JPWO2009054140A1 JPWO2009054140A1 (ja) | 2011-03-03 |
JP4690485B2 true JP4690485B2 (ja) | 2011-06-01 |
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US (1) | US8237172B2 (ja) |
JP (1) | JP4690485B2 (ja) |
CN (1) | CN101842878B (ja) |
WO (1) | WO2009054140A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014185010A1 (ja) * | 2013-05-13 | 2014-11-20 | パナソニックIpマネジメント株式会社 | 半導体素子およびその製造方法、半導体モジュールおよびその製造方法、並びに、半導体パッケージ |
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WO2011027525A1 (ja) * | 2009-09-02 | 2011-03-10 | パナソニック株式会社 | 半導体素子およびその製造方法 |
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EP2528098B1 (en) * | 2010-01-19 | 2019-01-02 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing same |
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CN101842878A (zh) | 2010-09-22 |
JPWO2009054140A1 (ja) | 2011-03-03 |
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CN101842878B (zh) | 2012-05-23 |
US8237172B2 (en) | 2012-08-07 |
US20100207125A1 (en) | 2010-08-19 |
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