JP6261155B2 - SiC半導体デバイスの製造方法 - Google Patents
SiC半導体デバイスの製造方法 Download PDFInfo
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- JP6261155B2 JP6261155B2 JP2012033772A JP2012033772A JP6261155B2 JP 6261155 B2 JP6261155 B2 JP 6261155B2 JP 2012033772 A JP2012033772 A JP 2012033772A JP 2012033772 A JP2012033772 A JP 2012033772A JP 6261155 B2 JP6261155 B2 JP 6261155B2
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 65
- 238000010438 heat treatment Methods 0.000 claims description 62
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 42
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052759 nickel Inorganic materials 0.000 claims description 32
- 239000010936 titanium Substances 0.000 claims description 31
- 229910052719 titanium Inorganic materials 0.000 claims description 31
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 30
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 89
- 239000000758 substrate Substances 0.000 description 31
- 230000004888 barrier function Effects 0.000 description 25
- 230000008569 process Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000012300 argon atmosphere Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-AKLPVKDBSA-N gold-200 Chemical compound [200Au] PCHJSUWPFVWCPO-AKLPVKDBSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Description
Ni + 2SiC → NiSi2 + 2C
例えば、特許文献1では、SiC基板上にニッケル層を製膜後、加熱によりニッケルシリサイド層を形成してSiC基板とニッケルシリサイド層との間にオーミックコンタクトを形成している製法において、上記加熱を、Arガス雰囲気中で、1000℃、2分急速加熱で行うことが記載されている。
ニッケルおよびチタンを含む層は、ニッケル層、チタン層の順で、SiC基板に形成することが好ましい。ニッケルとチタンの割合は、ニッケルとチタンを積層で形成する場合は、それぞれの膜厚の比を1対1から10対1、好ましくは3対1から6対1とすることで実施できる。その際、ニッケルの膜厚は20〜100nm、チタンの膜厚は10〜50nmであることが好ましい。又、ニッケル中にチタンが含まれるように合金として形成してもよい。ニッケルとチタンの割合は、1対1から10対1、好ましくは3対1から6対1とすることで実施できる。前記ニッケルおよびチタンを含む層を1050℃以上1350℃以下で加熱することにより、SiC基板との反応によりチタンカーバイドが生成し、チタンカーバイドを包含したニッケルシリサイド層が得られる。
本発明の実施例について、図1〜8を参照して以下説明する。図8に、フローティングリミッティングリング(FLR)構造を持つショットキーバリアダイオード(SBD)の模式図を示す。
本実施例では、SiC半導体上に、チタン及びニッケルを含む層を積層した後、加熱によりチタンカーバイドを含むニッケルシリサイド層を形成させる際の、該加熱の条件について、複数の条件を設定して調べた。赤外線ランプを備えた高速アニール装置(RTA)を用いて、アルゴン雰囲気中、昇温速度10℃/分でかつ加熱温度条件を異ならせて作製したオーミック電極のシート抵抗を測定した。加熱保持時間は30分である。測定結果を表1に示す。
本発明の実施例3について、図11を参照して以下説明する。図11に、ジャンクションバリアショットキー(JBS)構造を持つショットキーバリアダイオード(SBD)の模式図を示す。実施例1のショットキーバリアダイオードの代わりに、図11に示したジャンクションバリアショットキー(JBS)構造17を持つショットキーバリアダイオード(SBD)についても、実施例1と同様に作製した。同様の加熱条件で同様の結果が得られた。
本比較例では、本発明による裏面電極の形成法を用いない、SiC半導体デバイスの製造工程について説明する。エピタキシャル層を形成したSiC基板に、イオン注入によりチャンネルストッパー用のn型領域と、終端構造用のp型領域とフローティングリミッティングリング(FLR)構造用のp型領域を形成後、チャンネルストッパー用のn型領域を形成するために注入されたリンと終端構造用のp型領域とFLR構造用のp型領域を形成するために注入されたアルミニウムを活性化するために、アルゴン雰囲気中において1620℃で180秒間の活性化を行った。常圧CVD装置を用いて基板表面側に厚さ500nmのSiO2膜を形成した後、裏面側にスパッタ装置を用いて厚さ60nmのニッケル層を製膜し、RTAを用いて、アルゴン雰囲気中、昇温速度1500℃/分で1000℃に昇温後、2分間の処理を行ってニッケルシリサイドを生成した。その後、実施例1と同じ方法で裏面電極を形成した。得られた基板をダイシングして電気特性を評価した結果、室温でのオン電圧(Vf)が1.41±0.242Vであった。
2 ガードリング
3 絶縁層
4 チタンカーバイドを包含したニッケルシリサイド層
6 ショットキー電極
7 表面電極
8 裏面電極
11 オーミック電極
12 高濃度n型基板
13 低濃度n型ドリフト層
14 p型不純物イオン注入領域
15 ショットキー電極
16 FLR構造
17 JBS構造
Claims (4)
- SiC半導体に電極構造を形成する半導体デバイスの製造方法であって、
前記SiC半導体に、ニッケル及びチタンを含む層を形成した後、1150℃以上1350℃以下及び昇温速度が10℃/分以上100℃/分以下、加熱保持時間が30分以上120分以下の加熱によりチタンカーバイドを有するニッケルシリサイド層を生成し、前記チタンカーバイドを有するニッケルシリサイド層上に金属層を形成することにより、上記電極構造を形成することを特徴とする半導体デバイスの製造方法。 - 前記半導体デバイスは、前記電極構造として、前記チタンカーバイドを有するニッケルシリサイド層のオーミック電極と前記金属層の裏面電極とからなる裏面電極構造を有し、表面電極構造としてショットキー電極と表面電極を有することを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記電極構造は、SiC半導体上に、チタンカーバイドを有するニッケルシリサイド層、チタン層、ニッケル層、金層の順に積層された電極構造であることを特徴とする請求項1または2に記載の半導体デバイスの製造方法。
- 前記チタンカーバイドを有するニッケルシリサイド層は、前記SiC半導体に近い方から、ニッケルシリサイド層、チタンカーバイド層の順に積層されていることを特徴とする請求項1乃至3のいずれか1項に記載の半導体デバイスの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012033772A JP6261155B2 (ja) | 2012-02-20 | 2012-02-20 | SiC半導体デバイスの製造方法 |
CN201380010206.6A CN104126219B (zh) | 2012-02-20 | 2013-02-20 | SiC半导体器件及其制造方法 |
PCT/JP2013/054220 WO2013125596A1 (ja) | 2012-02-20 | 2013-02-20 | SiC半導体デバイスおよびその製造方法 |
DE112013001036.4T DE112013001036T5 (de) | 2012-02-20 | 2013-02-20 | SiC-Halbleitervorrichtung und Verfahren zur Herstellung derselben |
US14/456,391 US9159792B2 (en) | 2012-02-20 | 2014-08-11 | SiC semiconductor device and method for manufacturing the same |
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JP (1) | JP6261155B2 (ja) |
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WO2015076128A1 (ja) * | 2013-11-22 | 2015-05-28 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US9552993B2 (en) * | 2014-02-27 | 2017-01-24 | Semiconductor Components Industries, Llc | Semiconductor device and manufacturing method thereof |
JP2016015424A (ja) * | 2014-07-02 | 2016-01-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6398744B2 (ja) * | 2015-01-23 | 2018-10-03 | 三菱電機株式会社 | 半導体デバイス用基板の製造方法 |
US9960037B2 (en) | 2015-08-03 | 2018-05-01 | Board Of Trustees Of Michigan State University | Laser assisted SiC growth on silicon |
EP3159933B1 (en) | 2015-08-27 | 2021-04-28 | Shindengen Electric Manufacturing Co., Ltd. | Wide-gap semiconductor device and method for manufacturing the same |
JP6801200B2 (ja) * | 2016-03-16 | 2020-12-16 | 富士電機株式会社 | 炭化珪素半導体素子の製造方法 |
CN110573080B (zh) * | 2017-05-12 | 2023-04-28 | 株式会社东芝 | 光子计数型放射线检测器及使用了其的放射线检查装置 |
JP7283053B2 (ja) * | 2018-11-09 | 2023-05-30 | 富士電機株式会社 | 炭化珪素半導体装置、炭化珪素半導体組立体および炭化珪素半導体装置の製造方法 |
US10957759B2 (en) * | 2018-12-21 | 2021-03-23 | General Electric Company | Systems and methods for termination in silicon carbide charge balance power devices |
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JP3646548B2 (ja) * | 1999-01-11 | 2005-05-11 | 富士電機ホールディングス株式会社 | SiC半導体デバイス |
JP4501488B2 (ja) | 2004-03-26 | 2010-07-14 | 豊田合成株式会社 | 炭化珪素半導体のオーミック電極及びその製造方法 |
GB2424312B (en) * | 2005-03-14 | 2010-03-03 | Denso Corp | Method of forming an ohmic contact in wide band semiconductor |
JP2006332358A (ja) * | 2005-05-26 | 2006-12-07 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP4699812B2 (ja) * | 2005-06-07 | 2011-06-15 | 株式会社デンソー | 半導体装置およびその製造方法 |
US20070138482A1 (en) | 2005-12-08 | 2007-06-21 | Nissan Motor Co., Ltd. | Silicon carbide semiconductor device and method for producing the same |
JP2007184571A (ja) | 2005-12-08 | 2007-07-19 | Nissan Motor Co Ltd | 炭化珪素半導体装置、炭化珪素半導体装置の製造方法、炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体及び炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体の製造方法 |
JP2008135611A (ja) | 2006-11-29 | 2008-06-12 | Denso Corp | 半導体装置の製造方法 |
WO2009054140A1 (ja) * | 2007-10-24 | 2009-04-30 | Panasonic Corporation | 半導体素子およびその製造方法 |
JP5369581B2 (ja) | 2008-09-29 | 2013-12-18 | 住友電気工業株式会社 | 半導体デバイス用裏面電極、半導体デバイスおよび半導体デバイス用裏面電極の製造方法 |
US8963163B2 (en) * | 2009-10-05 | 2015-02-24 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
JP2011176183A (ja) * | 2010-02-25 | 2011-09-08 | Toyota Motor Corp | 半導体装置の製造方法 |
JP2011176187A (ja) * | 2010-02-25 | 2011-09-08 | Kyocera Corp | 積層型圧電素子およびこれを備えた噴射装置ならびに燃料噴射システム |
JP6099298B2 (ja) | 2011-05-30 | 2017-03-22 | 富士電機株式会社 | SiC半導体デバイス及びその製造方法 |
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WO2013125596A1 (ja) | 2013-08-29 |
DE112013001036T5 (de) | 2015-01-29 |
CN104126219A (zh) | 2014-10-29 |
US9159792B2 (en) | 2015-10-13 |
US20140346531A1 (en) | 2014-11-27 |
CN104126219B (zh) | 2017-09-22 |
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