WO2009054140A1 - 半導体素子およびその製造方法 - Google Patents
半導体素子およびその製造方法 Download PDFInfo
- Publication number
- WO2009054140A1 WO2009054140A1 PCT/JP2008/003019 JP2008003019W WO2009054140A1 WO 2009054140 A1 WO2009054140 A1 WO 2009054140A1 JP 2008003019 W JP2008003019 W JP 2008003019W WO 2009054140 A1 WO2009054140 A1 WO 2009054140A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon carbide
- carbide substrate
- semiconductor device
- back surface
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 5
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008801054389A CN101842878B (zh) | 2007-10-24 | 2008-10-24 | 半导体元件及其制造方法 |
US12/676,415 US8237172B2 (en) | 2007-10-24 | 2008-10-24 | Semiconductor device having a silicon carbide substrate with an ohmic electrode layer in which a reaction layer is arranged in contact with the silicon carbide substrate |
JP2009537941A JP4690485B2 (ja) | 2007-10-24 | 2008-10-24 | 半導体素子の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007276209 | 2007-10-24 | ||
JP2007-276209 | 2007-10-24 | ||
JP2008-203970 | 2008-08-07 | ||
JP2008203970 | 2008-08-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009054140A1 true WO2009054140A1 (ja) | 2009-04-30 |
Family
ID=40579248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/003019 WO2009054140A1 (ja) | 2007-10-24 | 2008-10-24 | 半導体素子およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8237172B2 (ja) |
JP (1) | JP4690485B2 (ja) |
CN (1) | CN101842878B (ja) |
WO (1) | WO2009054140A1 (ja) |
Cited By (15)
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WO2011027525A1 (ja) * | 2009-09-02 | 2011-03-10 | パナソニック株式会社 | 半導体素子およびその製造方法 |
WO2012032735A1 (ja) * | 2010-09-06 | 2012-03-15 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US20120129343A1 (en) * | 2009-10-05 | 2012-05-24 | Sumitomo Electric Industries, Ltd. | Method of manufacturing semiconductor device |
WO2012165513A1 (ja) * | 2011-05-30 | 2012-12-06 | 独立行政法人産業技術総合研究所 | SiC半導体デバイス及びその製造方法 |
WO2013125596A1 (ja) * | 2012-02-20 | 2013-08-29 | 富士電機株式会社 | SiC半導体デバイスおよびその製造方法 |
WO2013146446A1 (ja) * | 2012-03-30 | 2013-10-03 | 富士電機株式会社 | 炭化珪素半導体素子及びその製造方法 |
JP2013222823A (ja) * | 2012-04-17 | 2013-10-28 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2013232557A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体素子の製造方法 |
JP2016058657A (ja) * | 2014-09-11 | 2016-04-21 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体素子及び炭化珪素半導体素子の製造方法 |
JP5942212B2 (ja) * | 2013-05-13 | 2016-06-29 | パナソニックIpマネジメント株式会社 | 半導体素子およびその製造方法、半導体モジュールおよびその製造方法、並びに、半導体パッケージ |
JP2017168674A (ja) * | 2016-03-16 | 2017-09-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2018064107A (ja) * | 2011-08-02 | 2018-04-19 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2018078348A (ja) * | 2018-02-09 | 2018-05-17 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US10461077B2 (en) | 2011-08-02 | 2019-10-29 | Rohm Co., Ltd. | Method of manufacturing a semiconductor device |
US11075263B2 (en) | 2012-03-12 | 2021-07-27 | Rohm Co, , Ltd. | Semiconductor device, and method for manufacturing semiconductor device |
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JP5588671B2 (ja) | 2008-12-25 | 2014-09-10 | ローム株式会社 | 半導体装置の製造方法 |
US8872188B2 (en) * | 2010-01-19 | 2014-10-28 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing thereof |
JP5704003B2 (ja) * | 2011-07-15 | 2015-04-22 | 住友電気工業株式会社 | 半導体装置の製造方法 |
CN102522326B (zh) * | 2011-12-14 | 2014-09-24 | 杭州立昂微电子股份有限公司 | 一种适于丝网印刷的半导体分立器件背面金属的生产方法 |
CN102832238A (zh) * | 2012-09-17 | 2012-12-19 | 东莞市天域半导体科技有限公司 | 一种具有欧姆接触保护层的碳化硅器件及其制作方法 |
JP6297783B2 (ja) * | 2013-03-08 | 2018-03-20 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
WO2014156791A1 (ja) * | 2013-03-29 | 2014-10-02 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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JP6222771B2 (ja) * | 2013-11-22 | 2017-11-01 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
WO2015155806A1 (ja) * | 2014-04-09 | 2015-10-15 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
KR102532496B1 (ko) * | 2015-10-08 | 2023-05-17 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
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JP7113221B2 (ja) * | 2018-02-08 | 2022-08-05 | パナソニックIpマネジメント株式会社 | 炭化珪素半導体装置 |
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JP2002075908A (ja) * | 2000-09-01 | 2002-03-15 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置およびその製造方法 |
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2008
- 2008-10-24 WO PCT/JP2008/003019 patent/WO2009054140A1/ja active Application Filing
- 2008-10-24 JP JP2009537941A patent/JP4690485B2/ja active Active
- 2008-10-24 US US12/676,415 patent/US8237172B2/en active Active
- 2008-10-24 CN CN2008801054389A patent/CN101842878B/zh active Active
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Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011027525A1 (ja) * | 2009-09-02 | 2011-03-10 | パナソニック株式会社 | 半導体素子およびその製造方法 |
US20120129343A1 (en) * | 2009-10-05 | 2012-05-24 | Sumitomo Electric Industries, Ltd. | Method of manufacturing semiconductor device |
US8846531B2 (en) * | 2009-10-05 | 2014-09-30 | Sumitomo Electric Industries, Ltd. | Method of manufacturing an ohmic electrode containing titanium, aluminum and silicon on a silicon carbide surface |
WO2012032735A1 (ja) * | 2010-09-06 | 2012-03-15 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP5102411B2 (ja) * | 2010-09-06 | 2012-12-19 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US8653535B2 (en) | 2010-09-06 | 2014-02-18 | Panasonic Corporation | Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof |
CN103477439A (zh) * | 2010-09-06 | 2013-12-25 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US9129939B2 (en) | 2011-05-30 | 2015-09-08 | Fuji Electric Co., Ltd. | SiC semiconductor device and method for manufacturing the same |
WO2012165513A1 (ja) * | 2011-05-30 | 2012-12-06 | 独立行政法人産業技術総合研究所 | SiC半導体デバイス及びその製造方法 |
JP2012248729A (ja) * | 2011-05-30 | 2012-12-13 | National Institute Of Advanced Industrial & Technology | SiC半導体デバイス及びその製造方法 |
US9401411B2 (en) | 2011-05-30 | 2016-07-26 | Fuji Electric Co., Ltd. | SiC semiconductor device and method for manufacturing the same |
US10692861B2 (en) | 2011-08-02 | 2020-06-23 | Rohm Co., Ltd. | Method of manufacturing a semiconductor device |
JP2018064107A (ja) * | 2011-08-02 | 2018-04-19 | ローム株式会社 | 半導体装置およびその製造方法 |
US10461077B2 (en) | 2011-08-02 | 2019-10-29 | Rohm Co., Ltd. | Method of manufacturing a semiconductor device |
JP2013171902A (ja) * | 2012-02-20 | 2013-09-02 | Fuji Electric Co Ltd | SiC半導体デバイス及びその製造方法 |
WO2013125596A1 (ja) * | 2012-02-20 | 2013-08-29 | 富士電機株式会社 | SiC半導体デバイスおよびその製造方法 |
US9159792B2 (en) | 2012-02-20 | 2015-10-13 | Fuji Electric Co., Ltd. | SiC semiconductor device and method for manufacturing the same |
US11862672B2 (en) | 2012-03-12 | 2024-01-02 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing semiconductor device |
US11075263B2 (en) | 2012-03-12 | 2021-07-27 | Rohm Co, , Ltd. | Semiconductor device, and method for manufacturing semiconductor device |
US9252218B2 (en) | 2012-03-30 | 2016-02-02 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor element and fabrication method thereof |
JP2013211467A (ja) * | 2012-03-30 | 2013-10-10 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体素子及びその製造方法 |
WO2013146446A1 (ja) * | 2012-03-30 | 2013-10-03 | 富士電機株式会社 | 炭化珪素半導体素子及びその製造方法 |
JP2013222823A (ja) * | 2012-04-17 | 2013-10-28 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2013232557A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体素子の製造方法 |
JP5942212B2 (ja) * | 2013-05-13 | 2016-06-29 | パナソニックIpマネジメント株式会社 | 半導体素子およびその製造方法、半導体モジュールおよびその製造方法、並びに、半導体パッケージ |
JP2016058657A (ja) * | 2014-09-11 | 2016-04-21 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体素子及び炭化珪素半導体素子の製造方法 |
JP2017168674A (ja) * | 2016-03-16 | 2017-09-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2018078348A (ja) * | 2018-02-09 | 2018-05-17 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
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US8237172B2 (en) | 2012-08-07 |
JP4690485B2 (ja) | 2011-06-01 |
CN101842878A (zh) | 2010-09-22 |
JPWO2009054140A1 (ja) | 2011-03-03 |
US20100207125A1 (en) | 2010-08-19 |
CN101842878B (zh) | 2012-05-23 |
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