JP2021197420A - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
- Publication number
- JP2021197420A JP2021197420A JP2020101929A JP2020101929A JP2021197420A JP 2021197420 A JP2021197420 A JP 2021197420A JP 2020101929 A JP2020101929 A JP 2020101929A JP 2020101929 A JP2020101929 A JP 2020101929A JP 2021197420 A JP2021197420 A JP 2021197420A
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- region
- film
- semiconductor substrate
- nickel silicide
- silicide film
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 345
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 268
- 229910021334 nickel silicide Inorganic materials 0.000 claims abstract description 240
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims abstract description 240
- 239000011229 interlayer Substances 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 abstract description 30
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052719 titanium Inorganic materials 0.000 abstract description 27
- 230000004888 barrier function Effects 0.000 abstract description 17
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- 238000000034 method Methods 0.000 description 30
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 6
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
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- 150000002500 ions Chemical class 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
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- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
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- 229910005883 NiSi Inorganic materials 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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Abstract
Description
実施の形態1にかかる炭化珪素半導体装置の構造について説明する。図1,2は、実施の形態1にかかる炭化珪素半導体装置を半導体基板のおもて面側から見たレイアウトを示す平面図である。図1には、JBS構造を構成するp型領域(第2導電型領域)13のレイアウトの一例を示す。図2には、半導体基板(半導体チップ)30のおもて面上の配線構造の各部のうち、ボンディングパッド41のレイアウトの一例を図示する。
アルミニウム合金膜32は、フィールド酸化膜15上をチタン膜31よりも外側へ延在して、例えば深さ方向にp-型領域22に対向する位置で終端していてもよい。アルミニウム合金膜32は、例えばアルミニウムシリコン(AlSi)膜である。アルミニウム合金膜32に代えて、アルミニウム膜が設けられていてもよい。
半導体基板30の裏面(n+型出発基板11の裏面)の全面に裏面電極(第2金属電極膜)19が設けられ、n+型出発基板11に電気的に接続されている。
次に、実施の形態2にかかる炭化珪素半導体装置の構造について説明する。図21は、実施の形態2にかかる炭化珪素半導体装置の構造を示す断面図である。図22,23は、図21の一部を拡大して示す断面図である。図22,23は、それぞれ図24の切断線B1−B1’および切断線B2−B2’における断面構造であり、図21のMOSゲート(金属−酸化膜−半導体の3層構造からなる絶縁ゲート)の異なる部分を示している。図24は、図21の一部を半導体基板のおもて面側から見たレイアウトを示す平面図である。
上述した実施の形態1にかかる炭化珪素半導体装置40のニッケルシリサイド膜33の厚さt10について検証した(図17〜19参照)。図25は、実験例のオーミック電極の厚さとオーミック電極の金属材料膜の厚さとの関係を示す特性図である。図26,27は、実験例のオーミック電極を観察した状態を模式的に示す断面図である。図26,27には、それぞれオーミック電極(ニッケルシリサイド膜33,231)を形成するためにマスクとして用いた酸化膜51を破線で示す。
11,91 n+型出発基板
12,62 n-型ドリフト領域
13 JBS構造を構成するp型領域
14 おもて面電極
15 フィールド酸化膜
15’ 酸化膜(酸化膜マスク)のうち、活性領域においてn-型ドリフト領域を覆う部分
15a フィールド酸化膜のコンタクトホール
16 熱酸化膜
17 堆積酸化膜
18 パッシベーション膜
18a パッシベーション膜の開口部
19,78 裏面電極
20 エッジ終端領域
20a エッジ終端領域のつなぎ領域
21 フィールドリミッティングリング(FLR)
22 JTE構造を構成するp-型領域
23 JTE構造を構成するp--型領域
24 n+型チャネルストッパー領域
30,90 半導体基板
31 チタン膜
32,73 アルミニウム合金膜
33,34,35,53,71 ニッケルシリサイド膜
33a,71a ニッケルシリサイド膜の第1部分
33b,71b ニッケルシリサイド膜の第2部分
40,60 炭化珪素半導体装置
41 ボンディングパッド
42 ボンディングパッドとワイヤーとの接合部
50 カーボン保護膜
51 酸化膜(酸化膜マスク)
52 金属材料膜
54 レジスト膜
61 n+型ドレイン領域
63 n型電流拡散領域
64 p型ベース領域
65 n+型ソース領域
66 p++型コンタクト領域
67 トレンチ
68 ゲート絶縁膜
69 ゲート電極
70 層間絶縁膜
70a 層間絶縁膜のコンタクトホール
72 バリアメタル
74 めっき膜
75 端子ピン
76,77 保護膜
81,82 p+型領域
92 n-型炭化珪素層
93 p型炭化珪素層
d31 層間絶縁膜のコンタクトホールの深さ
h1 ニッケルシリサイド膜が層間絶縁膜のコンタクトホール内に突出する高さ
h2 層間絶縁膜の厚さ
t10,t10’,t20 ニッケルシリサイド膜の厚さ
t11,t21 ニッケルシリサイド膜の第1部分の厚さ
t12,t22 ニッケルシリサイド膜の第2部分の厚さ
w11,w11’,w21 ニッケルシリサイド膜の第1部分の幅
w12,w12’,w22 ニッケルシリサイド膜の第2部分の幅
w31 層間絶縁膜のコンタクトホールの幅
w32 p++型コンタクト領域の幅
X 半導体基板のおもて面に平行な第1方向
Y 半導体基板のおもて面に平行でかつ第1方向と直交する第2方向
Z 深さ方向
Claims (9)
- 炭化珪素からなる半導体基板の内部に設けられた第1導電型領域と、
前記半導体基板の第1主面と前記第1導電型領域との間に選択的に設けられた第2導電型領域と、
前記半導体基板の第1主面に設けられ、深さ方向に前記第2導電型領域に対向し、前記第2導電型領域にオーミック接合するニッケルシリサイド膜と、
を備え、
前記ニッケルシリサイド膜は、前記半導体基板の第1主面から離れる方向に前記半導体基板の第1主面から突出する第1部分と、深さ方向に前記半導体基板の第1主面から前記半導体基板の内部へ突出する第2部分と、を有し、
前記ニッケルシリサイド膜の前記第2部分の幅は、前記ニッケルシリサイド膜の前記第1部分の幅よりも広いことを特徴とする炭化珪素半導体装置。 - 前記ニッケルシリサイド膜の厚さは、300nm以上700nm以下であることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 活性領域において前記半導体基板の第1主面の全面に設けられ、前記ニッケルシリサイド膜を覆い、かつ深さ方向に前記第1導電型領域に対向し、前記第1導電型領域にショットキー接合する第1金属電極膜と、
前記半導体基板の第2主面に設けられた第2金属電極膜と、
を備えることを特徴とする請求項1または2に記載の炭化珪素半導体装置。 - 前記活性領域の周囲を囲む終端領域と、
前記終端領域において前記半導体基板の第1主面に設けられた酸化膜と、
前記活性領域の周囲を囲む、前記活性領域と前記酸化膜との間のつなぎ領域と、
前記つなぎ領域の全域において前記半導体基板の第1主面と前記第1導電型領域との間に設けられた、前記第2導電型領域よりも不純物濃度の高い第2導電型高濃度領域と、
を備え、
前記ニッケルシリサイド膜は、
前記第2導電型領域にオーミック接合する第1シリサイド膜と、
前記第2導電型高濃度領域にオーミック接合する第2シリサイド膜と、を有することを特徴とする請求項3に記載の炭化珪素半導体装置。 - 前記半導体基板の第1主面と前記第2導電型領域との間に選択的に設けられた、前記第1導電型領域よりも不純物濃度の高い第1導電型高濃度領域と、
前記第1導電型高濃度領域および前記第2導電型領域を貫通して前記第1導電型領域に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記半導体基板の第1主面に設けられ、前記ゲート電極を覆う層間絶縁膜と、
深さ方向に前記層間絶縁膜を貫通して前記半導体基板の第1主面に達するコンタクトホールと、
前記コンタクトホールの内部において前記ニッケルシリサイド膜に接し、前記ニッケルシリサイド膜を介して前記第1導電型高濃度領域および前記第2導電型領域に電気的に接続された第1金属電極膜と、
前記半導体基板の第2主面に設けられた第2金属電極膜と、
を備え、
前記ニッケルシリサイド膜は、
前記第1部分で前記コンタクトホールの内部に突出して前記第1金属電極膜に接し、
前記第2部分で前記第1導電型高濃度領域および前記第2導電型領域にオーミック接合することを特徴とする請求項1または2に記載の炭化珪素半導体装置。 - 前記ニッケルシリサイド膜が前記コンタクトホールの内部に突出する高さは前記層間絶縁膜の厚さの0.2倍より高いことを特徴とする請求項5に記載の炭化珪素半導体装置。
- 前記ニッケルシリサイド膜の前記第2部分の幅は、前記コンタクトホールの幅よりも広いことを特徴とする請求項5または6に記載の炭化珪素半導体装置。
- 前記ニッケルシリサイド膜は、アルミニウムを含むことを特徴とする請求項1〜7のいずれか一つに記載の炭化珪素半導体装置。
- 前記ニッケルシリサイド膜と前記半導体基板との境界は、前記半導体基板の第2主面側に凸状の傾斜のみからなる曲線状であることを特徴とする請求項1〜8のいずれか一つに記載の炭化珪素半導体装置。
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