JP4525827B2 - 露光装置及びデバイス製造方法、露光システム - Google Patents
露光装置及びデバイス製造方法、露光システム Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
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Description
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
以下、本発明の露光装置及びデバイス製造方法について図面を参照しながら説明する。
図1は本発明の露光装置を備えたデバイス製造システムの一実施形態を示す図であって側方から見た概略構成図、図2は図1を上方から見た図である。
マスクM上の所定の照明領域は照明光学系ILにより均一な照度分布の露光光ELで照明される。照明光学系ILから射出される露光光ELとしては、例えば水銀ランプから射出される紫外域の輝線(g線、h線、i線)及びKrFエキシマレーザ光(波長248nm)等の遠紫外光(DUV光)や、ArFエキシマレーザ光(波長193nm)及びF2レーザ光(波長157nm)等の真空紫外光(VUV光)などが用いられる。本実施形態では、ArFエキシマレーザ光を用いる。
この光学素子60は鏡筒PKに対して着脱(交換)可能に設けられている。
そして、液体除去処理をチャンバ25内部で行うようにしたので、周囲に液体50が飛散するのを防止できる。
次に、本発明の第2実施形態の露光装置に用いられる液体除去装置100のについて図6を参照しながら説明する。ここで、以下の説明において、液体除去装置100以外については、第1実施形態と同一又は同等であるのでその説明を簡略もしくは省略する。
カバー部30は基板Pの周囲を覆うように設けられているため、基板Pの回転により飛ばされた液体50はカバー部30のポケット部30Aに回収される。ポケット部30Aに回収された液体50は液体吸引装置29により回収される。
次に、図7を参照しながら第3実施形態の露光装置に用いられる液体除去装置100について説明する。本実施形態の特徴的部分は、液体除去装置100を構成する回転機構22及びカバー部30が、露光処理を行う露光装置本体EXの基板ステージPSTに設けられている点である。露光装置本体EXの構造は第1実施形態と同様であるので、その説明を省略する。
次に、図8を参照しながら第4実施形態の露光装置に用いる液体除去装置100について説明する。図8に示す液体除去装置100は、搬送システムHの搬送経路の途中であって、第2搬送装置H2と第3搬送装置H3との間に設けられ、チャンバ25を備えた構成である。露光装置本体EXの構造は第1実施形態と同様であるので、その説明を省略する。
本実施形態において、気体供給装置35は乾燥エアーを供給する。
次に、図10を参照しながら第5実施形態の露光装置に用いられる液体除去装置100について説明する。図10において、液体除去装置100は、液体吸引装置29に流路を介して接続され、基板Pの表面及び裏面のそれぞれに付着している液体50を吸引する第1、第2吸引部37、38と、チャンバ25内部を乾燥する乾燥装置39とを備えている。第1、第2吸引部37、38は基板Pに対してX軸方向に相対移動可能に設けられている。基板Pに付着している液体50を除去する際には、制御装置CONTは、第1、第2吸引部37、38を基板Pに接近させた状態で、液体吸引装置29を駆動する。これにより、基板Pに付着している液体50は第1、第2吸引部37、38を介して液体吸引装置29に吸引される。そして、第1、第2吸引部37、38を基板Pに対してX軸方向に移動しつつ液体吸引装置29による吸引動作を行うことにより、基板Pに付着している液体50が除去される。このとき、乾燥装置39がチャンバ25内部に対して乾燥した気体(乾燥エアー)を供給している。乾燥装置39の駆動によってチャンバ25内部が乾燥されることにより、基板Pからの液体50の除去を促進することができる。露光装置本体EXの構造は第1実施形態と同様であるので、その説明を省略する。
次に、図11を参照しながら第6実施形態の露光装置の液体除去装置100について説明する。なお、露光装置本体EXの構造は第1実施形態と同様であるので、その説明を省略する。図11において、液体除去装置100は、第1、第2吹出部33、34と、この第1、第2吹出部33、34を収容するチャンバ40とを備えている。本実施形態におけるチャンバ40は、Z軸方向にずれて形成された第1、第2開口部41、42を備えている。なお、本実施形態における第1、第2開口部41、42にはシャッタは設けられていないが、シャッタを設けることも可能である。そして、本実施形態における第2搬送装置H2は、基板Pを保持した状態で第1開口部41を介してチャンバ40内部に挿入可能なアーム部(第1搬送部材)43を備えている。アーム部43は、液浸法により露光処理され、液体50が付着した基板Pを水平面(XY平面)に対して所定角度傾斜した状態で搬送し、このチャンバ40内に挿入する。ここで、液体50が付着している基板Pを保持するアーム部43が挿入される第1開口部41が、第2開口部42よりZ軸方向において下方側に形成されており、アーム部43はチャンバ40に対する挿入方向前方側(搬送方向前方側)を上方にして搬送する。
第2開口部42近傍には、第3搬送装置H3としてのアーム部(第2搬送部材)44が設けられている。液体50が除去された基板Pはアーム部43からアーム部44に直接渡される。
図11を参照して説明した実施形態では、基板Pを傾けた状態で搬送したり、その搬送経路の途中に設けられた液体除去装置100で基板Pを傾けているが、図12に示すように、基板Pの露光完了後であって基板Pを搬送(アンロード)する前に、液体50が付着した基板Pを保持している基板ステージPST(Zステージ51)を傾けることで、液体50の除去を行うようにしてもよい。図12において、基板ステージPST(Zステージ51)は、その上面略中央部に基板Pを保持しており、基板Pの周囲には、液体50を回収可能な円環状の液体回収口(回収溝)73が形成されており、その回収溝73には液体吸収部材71が配置されている。Zステージ51内部には、その一端部を回収溝73と接続し、他端部をZステージ51外部に設けられた液体回収機構に接続する流路が形成されている。液体回収機構は、真空ポンプ等の真空系(吸引装置)、回収した液体を収容するタンクなどを備えている。液体吸収部材71は、例えば多孔質セラミックスやスポンジ等の多孔性材料により構成されており、液体50を所定量保持可能である。また、Zステージ51上において、Zステージ51に保持されている基板Pと液体吸収部材71(回収溝73)との間には、この基板Pの外周を所定幅で取り囲む環状の補助プレート部79が設けられている。補助プレート部79の表面の高さはZステージ51に保持されている基板Pの表面の高さとほぼ一致するように設定されている。そして、この補助プレート部79の外周を所定幅で取り囲むように配置されている液体吸収部材71(回収溝73)は、液体回収装置2で回収しきれなかった液体50を吸収(回収)する役割を果たしている。なお図12において、Zステージ51の+X側端部にはY軸方向に延在する移動鏡54Xが設けられ、Y側端部にはX軸方向に延在する移動鏡54Yが設けられており、レーザ干渉計はこれら移動鏡54X、54Yにレーザ光を照射して基板ステージPSTのX軸方向及びY軸方向における位置を検出する。
次に、図13を参照しながら本発明の第8実施形態の露光装置について説明する。本実施形態の特徴的な部分は、液体除去装置100を備えると共に、露光装置本体EXと液体除去装置100との搬送経路の途中に、露光処理後の基板Pを洗浄液を使って洗浄する洗浄装置150が設けられている点である。なお、本実施形態では単一の基板ステージPSTを用いた以外は、露光装置本体は実施形態1と同様である。
次に、図14を参照しながら、本発明の第9実施形態の露光装置及びデバイス製造システムについて説明する。本実施形態の特徴的な部分は、液体除去装置100へ基板Pを搬送する搬送システムHの搬送経路の下に、露光後の基板Pから落下した液体を処理する液体処理機構160を設けた点にある。なお、本実施形態では、基板ステージはPST1、PST2の2つ設けられており、露光装置本体は実施形態1と同様である。
Claims (9)
- パターンの像を液体を介して基板上に転写して基板を露光する露光装置であって、
パターンの像を基板に投影する投影光学系と、
露光された基板を処理する処理装置へ基板が搬出される前に、露光された基板を洗浄液を使って洗浄する洗浄装置と、
洗浄後の前記基板に残留した前記洗浄液を、処理装置へ搬出する前に除去する液体除去装置と、を備える露光装置。 - 前記洗浄装置は、前記露光後の基板の搬送経路中に設けられていることを特徴とする請求項1記載の露光装置。
- 前記液体は、水とは異なることを特徴とする請求項1又は2記載の露光装置。
- 前記洗浄装置は、洗浄を行うときに液体が飛散することを防止するように基板周囲の少なくとも一部を覆って周囲の空間から離隔するチャンバを有する請求項1〜3のいずれか一項に記載の露光装置。
- 前記洗浄装置と前記液体除去装置とは、液体の除去を行うときに液体が飛散することを防止するように基板周囲の少なくとも一部を覆って周囲の空間から離隔する同じチャンバを共有する請求項1〜4のいずれか一項に記載の露光装置。
- 前記露光された基板を搬送する搬送システムと、
前記搬送システムの基板搬送経路の下の少なくとも一部に、前記露光後の基板から落下した液体を回収する樋部材とを有する請求項1〜5のいずれか一項記載の露光装置。 - 請求項1〜6のいずれか一項記載の露光装置を用いることを特徴とするデバイス製造方法。
- 請求項1〜6のいずれか一項記載に記載の露光装置と、
露光した基板を処理を行う処理装置とを備える露光システム。 - 前記処理装置が、基板の基材に感光性材料を塗布する塗布装置及び露光された基板を現像する現像装置の少なくとも一方を含む請求項8記載の露光システム。
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US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG2010050110A (en) | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121829A1 (en) | 2002-11-29 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
JP4525062B2 (ja) * | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
KR101037057B1 (ko) * | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
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2003
- 2003-12-05 KR KR1020057009359A patent/KR101037057B1/ko active IP Right Grant
- 2003-12-05 SG SG200704277-3A patent/SG171468A1/en unknown
- 2003-12-05 WO PCT/JP2003/015587 patent/WO2004053952A1/ja active Application Filing
- 2003-12-05 EP EP03777282A patent/EP1571694A4/en not_active Withdrawn
- 2003-12-05 KR KR1020107027419A patent/KR101085372B1/ko active IP Right Grant
- 2003-12-05 AU AU2003289199A patent/AU2003289199A1/en not_active Abandoned
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2005
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2006
- 2006-03-02 US US11/365,869 patent/US20060154183A1/en not_active Abandoned
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AU2003289199A1 (en) | 2004-06-30 |
KR101037057B1 (ko) | 2011-05-26 |
JP2009105473A (ja) | 2009-05-14 |
KR20110003577A (ko) | 2011-01-12 |
TW200416497A (en) | 2004-09-01 |
KR101085372B1 (ko) | 2011-11-21 |
US20070171391A1 (en) | 2007-07-26 |
KR20050086771A (ko) | 2005-08-30 |
WO2004053952A1 (ja) | 2004-06-24 |
EP1571694A4 (en) | 2008-10-15 |
US20050225735A1 (en) | 2005-10-13 |
SG171468A1 (en) | 2011-06-29 |
US8034539B2 (en) | 2011-10-11 |
EP1571694A1 (en) | 2005-09-07 |
US20060154183A1 (en) | 2006-07-13 |
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