JP2682725B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2682725B2
JP2682725B2 JP2146542A JP14654290A JP2682725B2 JP 2682725 B2 JP2682725 B2 JP 2682725B2 JP 2146542 A JP2146542 A JP 2146542A JP 14654290 A JP14654290 A JP 14654290A JP 2682725 B2 JP2682725 B2 JP 2682725B2
Authority
JP
Japan
Prior art keywords
potential
voltage
mos transistor
substrate potential
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2146542A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0438791A (ja
Inventor
晃徳 柴山
俊郎 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2146542A priority Critical patent/JP2682725B2/ja
Priority to KR1019910009202A priority patent/KR950008447B1/ko
Priority to US07/709,961 priority patent/US5341035A/en
Publication of JPH0438791A publication Critical patent/JPH0438791A/ja
Application granted granted Critical
Publication of JP2682725B2 publication Critical patent/JP2682725B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2146542A 1990-06-04 1990-06-04 半導体装置 Expired - Lifetime JP2682725B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2146542A JP2682725B2 (ja) 1990-06-04 1990-06-04 半導体装置
KR1019910009202A KR950008447B1 (ko) 1990-06-04 1991-06-04 기판전위 발생회로
US07/709,961 US5341035A (en) 1990-06-04 1991-06-04 Substrate potential generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2146542A JP2682725B2 (ja) 1990-06-04 1990-06-04 半導体装置

Publications (2)

Publication Number Publication Date
JPH0438791A JPH0438791A (ja) 1992-02-07
JP2682725B2 true JP2682725B2 (ja) 1997-11-26

Family

ID=15410011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2146542A Expired - Lifetime JP2682725B2 (ja) 1990-06-04 1990-06-04 半導体装置

Country Status (2)

Country Link
JP (1) JP2682725B2 (ko)
KR (1) KR950008447B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08272467A (ja) * 1995-03-31 1996-10-18 Mitsubishi Electric Corp 基板電位発生回路
JP2924949B2 (ja) * 1996-04-15 1999-07-26 日本電気株式会社 半導体集積回路装置
JP3718106B2 (ja) 2000-05-22 2005-11-16 松下電器産業株式会社 半導体集積回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595320A (ja) * 1982-06-30 1984-01-12 Mitsubishi Electric Corp オンチツプ電源発生回路
JPH01296491A (ja) * 1988-05-25 1989-11-29 Hitachi Ltd 基準電圧発生回路

Also Published As

Publication number Publication date
KR950008447B1 (ko) 1995-07-31
KR920001855A (ko) 1992-01-30
JPH0438791A (ja) 1992-02-07

Similar Documents

Publication Publication Date Title
US7728574B2 (en) Reference circuit with start-up control, generator, device, system and method including same
KR940010419B1 (ko) 반도체집적회로
US9728232B2 (en) System and method for automatic detection of power up for a dual-rail circuit
JP2012003678A (ja) レギュレータ回路
CN108536211B (zh) 电压调整器
JP5969221B2 (ja) ボルテージレギュレータ
US8125846B2 (en) Internal voltage generating circuit of semiconductor memory device
JPH04351791A (ja) 半導体メモリー装置のデータ入力バッファー
KR102359756B1 (ko) 기준 전압 생성
KR101056737B1 (ko) 내부 전원 전압을 발생하는 장치
JPH05101658A (ja) ダイナミツク型ランダムアクセスメモリ装置
KR100904423B1 (ko) 반도체 메모리 소자
KR100803363B1 (ko) 반도체 메모리 장치의 전압 생성 회로
US10382033B2 (en) Stress tolerant power supply voltage detector circuit operable over a wide range of power supply voltages
JP3517493B2 (ja) 内部降圧回路
JP2682725B2 (ja) 半導体装置
KR20060075064A (ko) 반도체메모리소자
US20070146023A1 (en) Reset signal generating circuit and semiconductor integrated circuit device
US8581560B2 (en) Voltage regulator circuit for generating a supply voltage in different modes
US20140028276A1 (en) Internal voltage generator having immunity to ground bouncing
JP4166014B2 (ja) 高電圧感知器
KR100728557B1 (ko) 반도체 메모리 장치의 입력 버퍼
JP6038100B2 (ja) 半導体集積回路
JP2012143030A (ja) 電子回路
KR0183874B1 (ko) 반도체 메모리장치의 내부 전원전압 발생회로

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20070808

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080808

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080808

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090808

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090808

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100808

Year of fee payment: 13

EXPY Cancellation because of completion of term