JP2682725B2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JP2682725B2 JP2682725B2 JP2146542A JP14654290A JP2682725B2 JP 2682725 B2 JP2682725 B2 JP 2682725B2 JP 2146542 A JP2146542 A JP 2146542A JP 14654290 A JP14654290 A JP 14654290A JP 2682725 B2 JP2682725 B2 JP 2682725B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- voltage
- mos transistor
- substrate potential
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2146542A JP2682725B2 (ja) | 1990-06-04 | 1990-06-04 | 半導体装置 |
KR1019910009202A KR950008447B1 (ko) | 1990-06-04 | 1991-06-04 | 기판전위 발생회로 |
US07/709,961 US5341035A (en) | 1990-06-04 | 1991-06-04 | Substrate potential generator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2146542A JP2682725B2 (ja) | 1990-06-04 | 1990-06-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0438791A JPH0438791A (ja) | 1992-02-07 |
JP2682725B2 true JP2682725B2 (ja) | 1997-11-26 |
Family
ID=15410011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2146542A Expired - Lifetime JP2682725B2 (ja) | 1990-06-04 | 1990-06-04 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2682725B2 (ko) |
KR (1) | KR950008447B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08272467A (ja) * | 1995-03-31 | 1996-10-18 | Mitsubishi Electric Corp | 基板電位発生回路 |
JP2924949B2 (ja) * | 1996-04-15 | 1999-07-26 | 日本電気株式会社 | 半導体集積回路装置 |
JP3718106B2 (ja) | 2000-05-22 | 2005-11-16 | 松下電器産業株式会社 | 半導体集積回路 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS595320A (ja) * | 1982-06-30 | 1984-01-12 | Mitsubishi Electric Corp | オンチツプ電源発生回路 |
JPH01296491A (ja) * | 1988-05-25 | 1989-11-29 | Hitachi Ltd | 基準電圧発生回路 |
-
1990
- 1990-06-04 JP JP2146542A patent/JP2682725B2/ja not_active Expired - Lifetime
-
1991
- 1991-06-04 KR KR1019910009202A patent/KR950008447B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950008447B1 (ko) | 1995-07-31 |
KR920001855A (ko) | 1992-01-30 |
JPH0438791A (ja) | 1992-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7728574B2 (en) | Reference circuit with start-up control, generator, device, system and method including same | |
KR940010419B1 (ko) | 반도체집적회로 | |
US9728232B2 (en) | System and method for automatic detection of power up for a dual-rail circuit | |
JP2012003678A (ja) | レギュレータ回路 | |
CN108536211B (zh) | 电压调整器 | |
JP5969221B2 (ja) | ボルテージレギュレータ | |
US8125846B2 (en) | Internal voltage generating circuit of semiconductor memory device | |
JPH04351791A (ja) | 半導体メモリー装置のデータ入力バッファー | |
KR102359756B1 (ko) | 기준 전압 생성 | |
KR101056737B1 (ko) | 내부 전원 전압을 발생하는 장치 | |
JPH05101658A (ja) | ダイナミツク型ランダムアクセスメモリ装置 | |
KR100904423B1 (ko) | 반도체 메모리 소자 | |
KR100803363B1 (ko) | 반도체 메모리 장치의 전압 생성 회로 | |
US10382033B2 (en) | Stress tolerant power supply voltage detector circuit operable over a wide range of power supply voltages | |
JP3517493B2 (ja) | 内部降圧回路 | |
JP2682725B2 (ja) | 半導体装置 | |
KR20060075064A (ko) | 반도체메모리소자 | |
US20070146023A1 (en) | Reset signal generating circuit and semiconductor integrated circuit device | |
US8581560B2 (en) | Voltage regulator circuit for generating a supply voltage in different modes | |
US20140028276A1 (en) | Internal voltage generator having immunity to ground bouncing | |
JP4166014B2 (ja) | 高電圧感知器 | |
KR100728557B1 (ko) | 반도체 메모리 장치의 입력 버퍼 | |
JP6038100B2 (ja) | 半導体集積回路 | |
JP2012143030A (ja) | 電子回路 | |
KR0183874B1 (ko) | 반도체 메모리장치의 내부 전원전압 발생회로 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070808 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080808 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080808 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090808 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090808 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100808 Year of fee payment: 13 |
|
EXPY | Cancellation because of completion of term |