JP2015216389A - 反射構造を有する半導体発光ダイオードおよびその製造方法 - Google Patents
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Abstract
Description
半導体LEDは、電圧を受けて発光する機能を有する固体発光素子として周知である。一般的にLEDは、第1および第2の対向する面を有し、n型層、p型層、およびp−n接合部を含むダイオード領域を含む。アノード接触がp型層にオーム接触して、カソード接触がn型層にオーム接触する。ダイオード領域は、基板(例えば、サファイヤ、シリコン、炭化ケイ素、ガリウム砒素、窒化ガリウム等の成長基板)の上にエピタキシャル成長させられてよいが、完成品は基板を含まなくてよい。ダイオード領域は、例えば、炭化ケイ素、窒化ガリウム、リン化ガリウム、窒化アルミニウム、および/または、ガリウム砒素ベースの材料から製造されても、および/または、有機半導体ベースの材料から製造することができる。最後になったが、LEDの発光は、可視光領域または紫外線(UV)領域のものであってよく、LEDは、蛍光体(phosphor)等の波長変換材料を含むことができる。
詳しくは、図1を参照して説明したダイオード領域110が図2にも示されている。基板120も提供されているが、他の実施形態では不要な場合もある。基板120は、成長基板の厚みより薄くされてよい。p型層114にオーム接触し、第1面110aの上に延在する反射アノード接触130'が提供されている。反射アノード接触130'は、例えば、p型層114に直接接する約5オングストロームのニッケル(Ni)と、ニッケルの上の約1000オングストロームの銀(Ag)という、2層構造を含むことで、「NiAgミラー」130'を提供することができる。NiAgミラー130'は、ダイオード領域110から入射してきた可視光の少なくとも90%を反射することができる。他の実施形態では、p型の窒化ガリウムにもオーム接触を提供する他の反射層を利用することもできる。非常に薄いNi層(一部の実施形態では10オングストローム未満程度)のみが利用されることから、NiAgミラーの反射率は、主にAgから定まると理解することができる。さらに、アニーリング処理を施すと、このニッケルは酸化ニッケルに変質して、Agのp型の窒化ガリウムへのオーム接触性能を向上させることができる。従ってNiAgミラー130'は、Ag単体の反射率と略同等の反射率を有しうるが、p型層に対してより良く接触し、より低い電圧を提供することができる。他の実施形態では、純銀を利用することもできる。
図10Cおよび図10C'では、二酸化ケイ素その他の透明絶縁層、または、層140の組み合わせを、ブランケット成膜して、その後、n型層112および電流拡散層330にビアを開孔することが示されている。
Claims (19)
- 第1面とこれに対向する第2面とを有し、n型層とp型層とを含むダイオード領域と、
前記p型層にオーム接触して、前記第1面上に延在するアノード接触と、
前記アノード接触の外の前記第1面の上に延在する透明絶縁層と、
前記n型層に電気接続して、前記透明絶縁層を通り、前記アノード接触の外の前記透明絶縁層の上に延在して、反射カソード接触で前記アノードの外の前記第1面の実質的に全体を覆う前記反射カソード接触と
を備える発光ダイオード。 - 前記透明絶縁層はさらに、前記アノード接触へと延び、
前記反射カソード接触はさらに、前記アノード接触の上の前記透明絶縁層の上に延在して、前記反射カソード接触で前記アノード接触の外の前記第1面の実質的に全体を覆い、且つ、前記反射カソード接触で前記アノード接触の少なくとも一部も覆う請求項1に記載の発光ダイオード。 - 前記第1面内に延びて前記n型層を露呈させるビアをさらに備え、
前記透明絶縁層は、前記ビア内に延在し、前記反射カソード接触も前記透明絶縁層の上を通り、前記ビア内に延在しており、前記ビア内に露呈されている前記n型層と電気接続する請求項1に記載の発光ダイオード。 - 前記アノード接触は、前記p型層とオーム接触し前記第1面の上に延在する反射アノード接触を有する請求項1に記載の発光ダイオード。
- 前記反射アノード接触は側壁を有し、前記発光ダイオードはさらに、前記側壁の上を含む前記反射アノード接触の上に障壁層をさらに備える請求項4に記載の発光ダイオード。
- 前記アノード接触は、前記p型層とオーム接触して前記第1面の上に延在する透明アノード接触を有する請求項1に記載の発光ダイオード。
- 前記透明アノード接触の一部の上に電流拡散層をさらに備える請求項6に記載の発光ダイオード。
- 前記透明絶縁層は、前記透明アノード接触の上に延在し、前記反射カソード接触はさらに、前記透明アノード接触の上の前記透明絶縁層の上へと延びて、前記反射カソード接触で、前記透明アノード接触の少なくとも一部を覆う請求項6に記載の発光ダイオード。
- 前記透明絶縁層は、前記一部の外の前記透明アノード接触の上へと延び、前記反射カソード接触はさらに、前記一部の外の前記透明アノード接触の上にある前記透明絶縁層の上にも延在して、前記反射カソード接触で前記一部の外の前記透明アノード接触を覆う請求項7に記載の発光ダイオード。
- 前記アノード接触と電気接続されたアノードパッドと、
前記反射カソード接触と電気接続されたカソードパッドと
をさらに備え、
前記アノードパッドおよび前記カソードパッドは、互いに極近い間隔で前記第1面上に延在して、その間に間隙を画定している
請求項1に記載の発光ダイオード。 - 前記アノードパッドおよび前記カソードパッドは両方とも、前記反射アノード接触の上に延在し、前記反射アノード接触は、前記間隙に対応する割れ目を含み、
前記発光ダイオードは、前記アノードパッドおよび前記カソードパッドの少なくとも一方から絶縁され前記割れ目を越えて延在する反射層をさらに備える請求項10に記載の発光ダイオード。 - 搭載基板をさらに備え、
前記発光ダイオードは、前記アノードパッドおよび前記カソードパッドが前記搭載基板に隣接して、前記ダイオード領域が前記搭載基板から離れるように、前記搭載基板にフリップチップ実装される請求項10に記載の発光ダイオード。 - 前記第2面の上に透明基板をさらに備える請求項1に記載の発光ダイオード。
- 前記透明基板は、前記ダイオード領域から離れた外面を含み、前記外面の第1の部分には第2の部分とは異なるテクスチャ加工が施されることで、前記発光ダイオードの方向インジケータが提供される請求項13に記載の発光ダイオード。
- 前記反射カソード接触は、さらに、前記アノードパッドおよび前記カソードパッドのめっきシード層も提供し、前記アノードパッドおよび前記カソードパッドは、前記シード層の上の、めっきされたアノードパッドおよびカソードパッドである請求項10に記載の発光ダイオード。
- 前記反射カソード接触は、前記n型層に直接オーム接触する請求項1に記載の発光ダイオード。
- 前記n型層に直接オーム接触するオーム接触をさらに備え、
前記反射カソード接触は前記オーム接触の上にある請求項1に記載の発光ダイオード。 - 前記第2面の上に炭化ケイ素を有する透明基板をさらに備える請求項16に記載の発光ダイオード。
- 前記透明絶縁層は、複数の透明サブレイヤを有する請求項1に記載の発光ダイオード。
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EP3751627B1 (en) | 2024-07-24 |
JP2018160683A (ja) | 2018-10-11 |
EP3751627A3 (en) | 2021-04-07 |
JP7007350B2 (ja) | 2022-01-24 |
EP2430673B1 (en) | 2020-05-27 |
CN102460744B (zh) | 2014-11-12 |
EP3751627A2 (en) | 2020-12-16 |
US9397266B2 (en) | 2016-07-19 |
US20090283787A1 (en) | 2009-11-19 |
JP5797640B2 (ja) | 2015-10-21 |
JP2012527116A (ja) | 2012-11-01 |
US8643039B2 (en) | 2014-02-04 |
CN102460744A (zh) | 2012-05-16 |
JP2020065073A (ja) | 2020-04-23 |
EP2430673A1 (en) | 2012-03-21 |
JP6530442B2 (ja) | 2019-06-12 |
US20140151735A1 (en) | 2014-06-05 |
US8368100B2 (en) | 2013-02-05 |
US20110127568A1 (en) | 2011-06-02 |
WO2010132139A1 (en) | 2010-11-18 |
KR20120027318A (ko) | 2012-03-21 |
JP2017163154A (ja) | 2017-09-14 |
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