JP2012190938A - Igbt - Google Patents
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- JP2012190938A JP2012190938A JP2011052100A JP2011052100A JP2012190938A JP 2012190938 A JP2012190938 A JP 2012190938A JP 2011052100 A JP2011052100 A JP 2011052100A JP 2011052100 A JP2011052100 A JP 2011052100A JP 2012190938 A JP2012190938 A JP 2012190938A
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- 210000000746 body region Anatomy 0.000 claims abstract description 96
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 239000002344 surface layer Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract
【解決手段】 IGBTであって、半導体基板の上面に折れ曲がった形状に伸びているトレンチが形成されている。トレンチの内面は絶縁膜に覆われている。ゲート電極はトレンチの内部に配置されている。エミッタ電極は、半導体基板の上面に形成されている。コレクタ電極は、半導体基板の下面に形成されている。半導体基板の内部に、n型半導体により構成されており、前記絶縁膜に接しており、エミッタ電極に対してオーミック接続されているエミッタ領域と、p型半導体により構成されており、エミッタ領域の下側で前記絶縁膜に接しており、トレンチの内側コーナー部の前記絶縁膜に接しており、エミッタ電極に対してオーミック接続されているボディ領域と、ドリフト領域と、コレクタ領域が形成されている。
【選択図】図1
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:セル
20:半導体基板
20a:上面
20b:下面
22:エミッタ領域
24:上部ボディ領域
26:ボディコンタクト領域
28:低濃度ボディ領域
30:障壁領域
32:下部ボディ領域
34:ドリフト領域
36:コレクタ領域
38:領域
42:n型領域
50:エミッタ電極
60:コレクタ電極
70:トレンチ
72:内側コーナー部
76:絶縁膜
80:ゲート電極
98:ダミートレンチ電極
Claims (6)
- IGBTであって、
半導体基板と、エミッタ電極と、コレクタ電極と、ゲート電極を有しており、
半導体基板の上面に、当該上面を平面視したときに折れ曲がった形状に伸びているトレンチが形成されており、
トレンチの内面は、絶縁膜に覆われており、
ゲート電極は、トレンチの内部に配置されており、
エミッタ電極は、半導体基板の上面に形成されており、
コレクタ電極は、半導体基板の下面に形成されており、
半導体基板の内部に、
n型半導体により構成されており、前記絶縁膜に接しており、エミッタ電極に対してオーミック接続されているエミッタ領域と、
p型半導体により構成されており、エミッタ領域に隣接する位置で前記絶縁膜に接しているとともにトレンチの内側コーナー部で前記絶縁膜に接しており、エミッタ電極に対してオーミック接続されているボディ領域と、
n型半導体により構成されており、ボディ領域の下側に形成されており、ボディ領域によってエミッタ領域から分離されており、トレンチの下端部の前記絶縁膜に接しているドリフト領域と、
p型半導体により構成されており、ドリフト領域の下側に形成されており、ドリフト領域によってボディ領域から分離されており、コレクタ電極に対してオーミック接続されているコレクタ領域、
が形成されている、
ことを特徴とするIGBT。 - ボディ領域を上部ボディ領域と下部ボディ領域に分離している障壁領域をさらに有しており、
上部ボディ領域は、エミッタ領域に接しており、
障壁領域は、n型半導体により構成されており、上部ボディ領域の下側に形成されており、
下部ボディ領域は、障壁領域の下側に形成されている、
ことを特徴とする請求項1に記載のIGBT。 - ボディ領域とドリフト領域の間に、高濃度n型領域が形成されており、
高濃度n型領域は、n型半導体により構成されており、ボディ領域に接しており、ボディ領域によってエミッタ領域から分離されており、ドリフト領域に接しており、ボディ領域をドリフト領域から分離しており、ドリフト領域よりも高いn型不純物濃度を有する、
ことを特徴とする請求項1または2に記載のIGBT。 - ボディ領域が、エミッタ電極に対してオーミック接続されている第1領域と、第1領域を介してエミッタ電極と導通している第2領域を有しており、
第1領域が、前記絶縁膜と接しておらず、
第2領域が、前記絶縁膜と接しており、
エミッタ領域が、トレンチの内側コーナー部の前記絶縁膜と接していない、
ことを特徴とする請求項1〜3の何れか一項に記載のIGBT。 - 半導体基板の上面を平面視したときにトレンチによって仕切られた四角形の領域が形成されており、
四角形の領域内にエミッタ領域とボディ領域が形成されており、
半導体基板を平面視したときに、四角形の領域内において、エミッタ領域が前記絶縁膜と接している境界線の総距離が、ボディ領域が前記絶縁膜と接している境界線の総距離より短い、
ことを特徴とする請求項1〜4の何れか一項に記載のIGBT。 - 半導体基板の上面を平面視したときにトレンチによって仕切られた四角形の領域が形成されており、
四角形の領域内にエミッタ領域とボディ領域が形成されており、
四角形の領域のアスペクト比が0.4〜2.5の範囲内である、
ことを特徴とする請求項1〜4の何れか一項に記載のIGBT。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011052100A JP5568036B2 (ja) | 2011-03-09 | 2011-03-09 | Igbt |
CN201280011777.7A CN103403872B (zh) | 2011-03-09 | 2012-03-07 | 绝缘栅双极型晶体管 |
EP12712728.0A EP2684216B1 (en) | 2011-03-09 | 2012-03-07 | Insulated-gate bipolar transistor |
PCT/IB2012/000418 WO2012120359A2 (en) | 2011-03-09 | 2012-03-07 | Insulated-gate bipolar transistor |
US14/002,752 US9425271B2 (en) | 2011-03-09 | 2012-03-07 | Insulated-gate bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011052100A JP5568036B2 (ja) | 2011-03-09 | 2011-03-09 | Igbt |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013062296A Division JP2013150000A (ja) | 2013-03-25 | 2013-03-25 | Igbt |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012190938A true JP2012190938A (ja) | 2012-10-04 |
JP5568036B2 JP5568036B2 (ja) | 2014-08-06 |
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ID=45932450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011052100A Active JP5568036B2 (ja) | 2011-03-09 | 2011-03-09 | Igbt |
Country Status (5)
Country | Link |
---|---|
US (1) | US9425271B2 (ja) |
EP (1) | EP2684216B1 (ja) |
JP (1) | JP5568036B2 (ja) |
CN (1) | CN103403872B (ja) |
WO (1) | WO2012120359A2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014162498A1 (ja) * | 2013-04-02 | 2014-10-09 | トヨタ自動車株式会社 | トレンチゲート電極を利用するigbt |
JP2015138789A (ja) * | 2014-01-20 | 2015-07-30 | トヨタ自動車株式会社 | 半導体装置 |
WO2015182233A1 (ja) * | 2014-05-26 | 2015-12-03 | トヨタ自動車株式会社 | 半導体装置 |
JP2016219739A (ja) * | 2015-05-26 | 2016-12-22 | トヨタ自動車株式会社 | 半導体装置 |
JPWO2014174911A1 (ja) * | 2013-04-23 | 2017-02-23 | 三菱電機株式会社 | 半導体装置 |
US9595603B2 (en) | 2015-07-02 | 2017-03-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
DE102016122600A1 (de) | 2015-12-08 | 2017-06-08 | Toyota Jidosha Kabushiki Kaisha | Igbt |
JPWO2017099096A1 (ja) * | 2015-12-11 | 2018-03-29 | 富士電機株式会社 | 半導体装置 |
JP2019096732A (ja) * | 2017-11-22 | 2019-06-20 | トヨタ自動車株式会社 | 半導体装置 |
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Also Published As
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US20140054645A1 (en) | 2014-02-27 |
WO2012120359A2 (en) | 2012-09-13 |
CN103403872B (zh) | 2016-08-17 |
WO2012120359A3 (en) | 2012-11-15 |
CN103403872A (zh) | 2013-11-20 |
EP2684216A2 (en) | 2014-01-15 |
EP2684216B1 (en) | 2021-10-27 |
JP5568036B2 (ja) | 2014-08-06 |
US9425271B2 (en) | 2016-08-23 |
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