JP2009049385A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2009049385A JP2009049385A JP2008182189A JP2008182189A JP2009049385A JP 2009049385 A JP2009049385 A JP 2009049385A JP 2008182189 A JP2008182189 A JP 2008182189A JP 2008182189 A JP2008182189 A JP 2008182189A JP 2009049385 A JP2009049385 A JP 2009049385A
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- semiconductor film
- film
- liquid crystal
- crystal display
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】チャネルストップ型の逆スタガ型薄膜トランジスタを有する液晶表示装置において、該チャネルストップ型の逆スタガ型薄膜トランジスタは、ゲート電極と、ゲート電極上にゲート絶縁膜と、ゲート絶縁膜上にチャネル形成領域を含む微結晶半導体膜と、微結晶半導体膜上にバッファ層と、バッファ層上において微結晶半導体膜のチャネル形成領域と重なる領域にチャネル保護層と、チャネル保護層及びバッファ層上にソース領域及びドレイン領域と、ソース領域及びドレイン領域上にソース電極及びドレイン電極を有する。
【選択図】図1
Description
(実施の形態1)
本実施の形態では、液晶表示装置に用いられる薄膜トランジスタ及びその作製工程について、図1乃至図4を用いて説明する。図1乃至図3は、薄膜トランジスタ、及びその作製工程を示す断面図であり、図4は一画素における薄膜トランジスタ及び画素電極の接続領域の平面図である。図1乃至図3は、図4における線A−Bの薄膜トランジスタ及びその作製工程を示す断面図である。
本実施の形態は、実施の形態1において、薄膜トランジスタの形状が異なる例である。従って、他は実施の形態1と同様に行うことができ、実施の形態1と同一部分又は同様な機能を有する部分、及び工程の繰り返しの説明は省略する。
本実施の形態では、微結晶半導体膜にレーザ光を照射する作製工程例を説明する。
本実施の形態は、実施の形態1乃至3において、液晶表示装置の作製工程の例を詳細に説明する。従って、実施の形態1乃至3と同一部分又は同様な機能を有する部分、及び工程の繰り返しの説明は省略する。
本実施の形態では、実施の形態1乃至4で示す薄膜トランジスタを有する液晶表示装置の例を図12乃至図25を用いて説明する。図12乃至図25の液晶表示装置に用いられるTFT628、629は、実施の形態1又は実施の形態2で示す薄膜トランジスタと同様に作製でき、電気特性及び信頼性の高い薄膜トランジスタである。TFT628はチャネル保護層608を、TFT629はチャネル保護層611をそれぞれ有し、微結晶半導体層膜をチャネル形成領域とする逆スタガ薄膜トランジスタである。
次に、本発明の液晶表示装置の一形態である液晶表示パネル(液晶パネルともいう)の構成について、以下に示す。
本発明により得られる液晶表示装置等によって、液晶表示モジュール(液晶モジュールともいう)に用いることができる。即ち、それらを表示部に組み込んだ電子機器全てに本発明を実施できる。
Claims (11)
- ゲート電極と、前記ゲート電極上にゲート絶縁膜と、前記ゲート絶縁膜上にチャネル形成領域を含む微結晶半導体膜と、前記微結晶半導体膜上にバッファ層と、前記バッファ層上において前記微結晶半導体膜の前記チャネル形成領域と重なる領域にチャネル保護層と、前記チャネル保護層及び前記バッファ層上にソース領域及びドレイン領域と、前記ソース領域及び前記ドレイン領域上にソース電極及びドレイン電極を有することを特徴とする液晶表示装置。
- ゲート電極と、前記ゲート電極上にゲート絶縁膜と、前記ゲート絶縁膜上にチャネル形成領域を含む微結晶半導体膜と、前記微結晶半導体膜上にバッファ層と、前記バッファ層上において前記微結晶半導体膜の前記チャネル形成領域と重なる領域にチャネル保護層と、前記チャネル保護層及び前記バッファ層上にソース領域及びドレイン領域と、前記ソース領域及び前記ドレイン領域上にソース電極及びドレイン電極と、前記チャネル保護層、前記ソース電極、及び前記ドレイン電極を覆う絶縁膜とを有することを特徴とする液晶表示装置。
- 請求項1又は請求項2において、前記ソース電極又は前記ドレイン電極と電気的に接続する画素電極を有することを特徴とする液晶表示装置。
- 請求項1乃至3のいずれか一項において、前記バッファ層は、非晶質半導体膜で形成されることを特徴とする液晶表示装置。
- 請求項4において、前記バッファ層は、窒素を含む非晶質半導体膜で形成されることを特徴とする液晶表示装置。
- 請求項4において、前記バッファ層は、水素を含む非晶質半導体膜で形成されることを特徴とする液晶表示装置。
- 請求項4において、前記バッファ層は、フッ素、塩素、臭素、またはヨウ素を含む非晶質半導体膜で形成されることを特徴とする液晶表示装置。
- 請求項4において、前記バッファ層は、含まれる窒素、炭素、及び酸素の総濃度が、1×1020atoms/cm3以上15×1020atoms/cm3以下の非晶質半導体膜であることを特徴とする液晶表示装置。
- 請求項1乃至8のいずれか一項において、前記ゲート電極と重畳して設けられる前記微結晶半導体膜の端部は、前記ゲート電極の端部より内側に位置することを特徴とする液晶表示装置。
- 請求項1乃至9のいずれか一項において、前記ソース領域及び前記ドレイン領域は、前記ソース電極及び前記ドレイン電極の端よりも延びており、
対向する前記ソース領域と前記ドレイン領域の距離は、対向する前記ソース電極と前記ドレイン領域の距離よりも短いことを特徴とする液晶表示装置。 - 請求項1乃至10のいずれか一項において、前記バッファ層の膜厚は、10nm以上50nm以下の範囲であることを特徴とする液晶表示装置。
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TWI521292B (zh) | 2016-02-11 |
US20110198595A1 (en) | 2011-08-18 |
US20140204304A1 (en) | 2014-07-24 |
US9142632B2 (en) | 2015-09-22 |
TWI464510B (zh) | 2014-12-11 |
TW201437729A (zh) | 2014-10-01 |
CN102184969A (zh) | 2011-09-14 |
TWI575293B (zh) | 2017-03-21 |
CN101350367B (zh) | 2013-02-13 |
JP6117884B2 (ja) | 2017-04-19 |
TW200921230A (en) | 2009-05-16 |
TW201608318A (zh) | 2016-03-01 |
CN102184969B (zh) | 2014-06-25 |
US7940345B2 (en) | 2011-05-10 |
CN103066113A (zh) | 2013-04-24 |
US8896778B2 (en) | 2014-11-25 |
US20090021664A1 (en) | 2009-01-22 |
JP2016006549A (ja) | 2016-01-14 |
KR20090009728A (ko) | 2009-01-23 |
JP2014149545A (ja) | 2014-08-21 |
CN103064222B (zh) | 2016-11-23 |
KR101581171B1 (ko) | 2015-12-30 |
CN103064222A (zh) | 2013-04-24 |
CN103066113B (zh) | 2015-11-18 |
CN101350367A (zh) | 2009-01-21 |
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